SE9500146D0 - Halvledarkomponent i kiselkarbid - Google Patents
Halvledarkomponent i kiselkarbidInfo
- Publication number
- SE9500146D0 SE9500146D0 SE9500146A SE9500146A SE9500146D0 SE 9500146 D0 SE9500146 D0 SE 9500146D0 SE 9500146 A SE9500146 A SE 9500146A SE 9500146 A SE9500146 A SE 9500146A SE 9500146 D0 SE9500146 D0 SE 9500146D0
- Authority
- SE
- Sweden
- Prior art keywords
- silicon carbide
- pct
- junction
- conductive
- implantation method
- Prior art date
Links
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title abstract 5
- 229910010271 silicon carbide Inorganic materials 0.000 title abstract 4
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 238000000034 method Methods 0.000 abstract 4
- 238000002513 implantation Methods 0.000 abstract 3
- 238000004519 manufacturing process Methods 0.000 abstract 3
- 238000009413 insulation Methods 0.000 abstract 1
- 238000005468 ion implantation Methods 0.000 abstract 1
- 238000002161 passivation Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/0445—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising crystalline silicon carbide
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/7602—Making of isolation regions between components between components manufactured in an active substrate comprising SiC compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
- H01L29/1608—Silicon carbide
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66053—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide
- H01L29/6606—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/931—Silicon carbide semiconductor
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- High Energy & Nuclear Physics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Ceramic Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Electrodes Of Semiconductors (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Bipolar Transistors (AREA)
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
SE9500146A SE9500146D0 (sv) | 1995-01-18 | 1995-01-18 | Halvledarkomponent i kiselkarbid |
US08/716,252 US5914499A (en) | 1995-01-18 | 1996-01-17 | High voltage silicon carbide semiconductor device with bended edge |
DE69601981T DE69601981T2 (de) | 1995-01-18 | 1996-01-17 | Herstellungsverfahren einer halbleiteranordnung aus siliziumkarbid |
EP96901171A EP0750789B1 (en) | 1995-01-18 | 1996-01-17 | Method for obtaining a semiconductor device in silicon carbide |
PCT/SE1996/000034 WO1996022610A1 (en) | 1995-01-18 | 1996-01-17 | Semiconductor device in silicon carbide |
JP52220096A JP4143120B2 (ja) | 1995-01-18 | 1996-01-17 | シリコンカーバイドにおける半導体デバイス |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
SE9500146A SE9500146D0 (sv) | 1995-01-18 | 1995-01-18 | Halvledarkomponent i kiselkarbid |
Publications (1)
Publication Number | Publication Date |
---|---|
SE9500146D0 true SE9500146D0 (sv) | 1995-01-18 |
Family
ID=20396853
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SE9500146A SE9500146D0 (sv) | 1995-01-18 | 1995-01-18 | Halvledarkomponent i kiselkarbid |
Country Status (6)
Country | Link |
---|---|
US (1) | US5914499A (xx) |
EP (1) | EP0750789B1 (xx) |
JP (1) | JP4143120B2 (xx) |
DE (1) | DE69601981T2 (xx) |
SE (1) | SE9500146D0 (xx) |
WO (1) | WO1996022610A1 (xx) |
Families Citing this family (29)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
SE512259C2 (sv) * | 1998-03-23 | 2000-02-21 | Abb Research Ltd | Halvledaranordning bestående av dopad kiselkarbid vilken innefattar en pn-övergång som uppvisar åtminstone en ihålig defekt och förfarande för dess framställning |
US6803243B2 (en) * | 2001-03-15 | 2004-10-12 | Cree, Inc. | Low temperature formation of backside ohmic contacts for vertical devices |
US6884644B1 (en) * | 1998-09-16 | 2005-04-26 | Cree, Inc. | Low temperature formation of backside ohmic contacts for vertical devices |
JP3955396B2 (ja) | 1998-09-17 | 2007-08-08 | 株式会社ルネサステクノロジ | 半導体サージ吸収素子 |
JP4320810B2 (ja) * | 1998-11-30 | 2009-08-26 | 株式会社デンソー | 炭化珪素半導体装置の製造方法 |
US6396080B2 (en) | 1999-05-18 | 2002-05-28 | Cree, Inc | Semi-insulating silicon carbide without vanadium domination |
US6218680B1 (en) | 1999-05-18 | 2001-04-17 | Cree, Inc. | Semi-insulating silicon carbide without vanadium domination |
US6373076B1 (en) * | 1999-12-07 | 2002-04-16 | Philips Electronics North America Corporation | Passivated silicon carbide devices with low leakage current and method of fabricating |
US6924215B2 (en) * | 2002-05-29 | 2005-08-02 | Taiwan Semiconductor Manufacturing Co., Ltd | Method of monitoring high tilt angle of medium current implant |
US7157730B2 (en) * | 2002-12-20 | 2007-01-02 | Finisar Corporation | Angled wafer rotating ion implantation |
EP1623467B1 (en) | 2003-05-09 | 2016-12-07 | Cree, Inc. | LED fabrication via ion implant isolation |
US20050194584A1 (en) * | 2003-11-12 | 2005-09-08 | Slater David B.Jr. | LED fabrication via ion implant isolation |
US7592634B2 (en) * | 2004-05-06 | 2009-09-22 | Cree, Inc. | LED fabrication via ion implant isolation |
WO2006058216A2 (en) * | 2004-11-24 | 2006-06-01 | Microsemi Corporation | Junction terminations structures for wide-bandgap power devices |
US7622358B2 (en) * | 2005-09-30 | 2009-11-24 | Taiwan Semiconductor Manufacturing Co., Ltd. | Semiconductor device with semi-insulating substrate portions and method for forming the same |
JP5044117B2 (ja) * | 2005-12-14 | 2012-10-10 | 関西電力株式会社 | 炭化珪素バイポーラ型半導体装置 |
JP5182359B2 (ja) * | 2008-03-07 | 2013-04-17 | 三菱電機株式会社 | 炭化珪素半導体装置 |
US8106487B2 (en) | 2008-12-23 | 2012-01-31 | Pratt & Whitney Rocketdyne, Inc. | Semiconductor device having an inorganic coating layer applied over a junction termination extension |
CN102570294B (zh) * | 2012-01-12 | 2013-07-10 | 北京工业大学 | 一种真空解理大功率半导体激光器腔面氮钝化方法 |
JP6107430B2 (ja) * | 2012-06-08 | 2017-04-05 | 豊田合成株式会社 | 半導体装置 |
JP6383516B2 (ja) | 2013-04-19 | 2018-08-29 | ライトスピン テクノロジーズ、インク. | 集積アバランシェ・フォトダイオード・アレイ |
WO2016178678A1 (en) | 2015-05-06 | 2016-11-10 | Lightspin Technologies, Inc. | Integrated avalanche photodiode arrays |
JP6873926B2 (ja) * | 2015-06-09 | 2021-05-19 | アーベーベー・シュバイツ・アーゲーABB Schweiz AG | 炭化ケイ素パワー半導体デバイスのエッジ終端部を製造する方法 |
DE102015115173A1 (de) * | 2015-09-09 | 2017-03-09 | Infineon Technologies Austria Ag | Ein Halbleiterwafer, eine Implantationsvorrichtung zum Implantieren von Protonen und ein Verfahren zum Bilden eines Halbleiterbauelements |
JP6557134B2 (ja) * | 2015-12-24 | 2019-08-07 | 住重アテックス株式会社 | 半導体装置および半導体装置の製造方法 |
US10541300B2 (en) | 2016-05-26 | 2020-01-21 | General Electric Company | Semiconductor device and method of making thereof |
US10529884B2 (en) | 2017-11-09 | 2020-01-07 | LightSpin Technologies Inc. | Virtual negative bevel and methods of isolating adjacent devices |
US10608079B2 (en) | 2018-02-06 | 2020-03-31 | General Electric Company | High energy ion implantation for junction isolation in silicon carbide devices |
JP7312616B2 (ja) * | 2019-06-14 | 2023-07-21 | 日産自動車株式会社 | 半導体装置及びその製造方法 |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL131898C (xx) * | 1965-03-26 | |||
US3458779A (en) * | 1967-11-24 | 1969-07-29 | Gen Electric | Sic p-n junction electroluminescent diode with a donor concentration diminishing from the junction to one surface and an acceptor concentration increasing in the same region |
US5270244A (en) * | 1993-01-25 | 1993-12-14 | North Carolina State University At Raleigh | Method for forming an oxide-filled trench in silicon carbide |
US5449925A (en) * | 1994-05-04 | 1995-09-12 | North Carolina State University | Voltage breakdown resistant monocrystalline silicon carbide semiconductor devices |
US5399883A (en) * | 1994-05-04 | 1995-03-21 | North Carolina State University At Raleigh | High voltage silicon carbide MESFETs and methods of fabricating same |
WO1995032524A1 (en) * | 1994-05-24 | 1995-11-30 | Abb Research Ltd. | Semiconductor device in silicon carbide with passivated surface |
US5650654A (en) * | 1994-12-30 | 1997-07-22 | International Business Machines Corporation | MOSFET device having controlled parasitic isolation threshold voltage |
-
1995
- 1995-01-18 SE SE9500146A patent/SE9500146D0/xx unknown
-
1996
- 1996-01-17 DE DE69601981T patent/DE69601981T2/de not_active Expired - Fee Related
- 1996-01-17 US US08/716,252 patent/US5914499A/en not_active Expired - Lifetime
- 1996-01-17 JP JP52220096A patent/JP4143120B2/ja not_active Expired - Lifetime
- 1996-01-17 WO PCT/SE1996/000034 patent/WO1996022610A1/en active IP Right Grant
- 1996-01-17 EP EP96901171A patent/EP0750789B1/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
WO1996022610A1 (en) | 1996-07-25 |
DE69601981D1 (de) | 1999-05-12 |
US5914499A (en) | 1999-06-22 |
JP4143120B2 (ja) | 2008-09-03 |
EP0750789B1 (en) | 1999-04-07 |
JPH09511103A (ja) | 1997-11-04 |
EP0750789A1 (en) | 1997-01-02 |
DE69601981T2 (de) | 1999-12-02 |
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