SE9102189D0 - WEAKLY TYRISTOR SYSTEM - Google Patents

WEAKLY TYRISTOR SYSTEM

Info

Publication number
SE9102189D0
SE9102189D0 SE9102189A SE9102189A SE9102189D0 SE 9102189 D0 SE9102189 D0 SE 9102189D0 SE 9102189 A SE9102189 A SE 9102189A SE 9102189 A SE9102189 A SE 9102189A SE 9102189 D0 SE9102189 D0 SE 9102189D0
Authority
SE
Sweden
Prior art keywords
turn
thyristor
semiconductor body
tyristor
weakly
Prior art date
Application number
SE9102189A
Other languages
Swedish (sv)
Other versions
SE468731B (en
SE9102189L (en
Inventor
P Svedberg
Original Assignee
Asea Brown Boveri
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Asea Brown Boveri filed Critical Asea Brown Boveri
Priority to SE9102189A priority Critical patent/SE468731B/en
Publication of SE9102189D0 publication Critical patent/SE9102189D0/en
Priority to AU23328/92A priority patent/AU2332892A/en
Priority to PCT/SE1992/000484 priority patent/WO1993002477A1/en
Publication of SE9102189L publication Critical patent/SE9102189L/en
Publication of SE468731B publication Critical patent/SE468731B/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/7404—Thyristor-type devices, e.g. having four-zone regenerative action structurally associated with at least one other device
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/567—Circuits characterised by the use of more than one type of semiconductor device, e.g. BIMOS, composite devices such as IGBT
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/72—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices having more than two PN junctions; having more than three electrodes; having more than one electrode connected to the same conductivity region
    • H03K17/73—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices having more than two PN junctions; having more than three electrodes; having more than one electrode connected to the same conductivity region for dc voltages or currents
    • H03K17/732—Measures for enabling turn-off

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Thyristors (AREA)

Abstract

A turn-off thyristor system has, in the same semiconductor body (H1), a transistor structure (QP0) and a plurality of thyristor modules (QP1, QN1) connected in parallel with said transistor structure. The thyristor modules have MOS transistors (MN1) integrated in the semiconductor body and adapted to bring the system into conducting state by firing. Further, the system has a turn-off member, common to the thyristor modules, in the form of an MOS transistor (MN2) formed in a separate semiconductor body (H2), said turn-off member being adapted, for turn-off of the system, to shunt the individual emitter junctions of the thyristor modules.
SE9102189A 1991-07-17 1991-07-17 WEAKLY TYRISTOR SYSTEM SE468731B (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
SE9102189A SE468731B (en) 1991-07-17 1991-07-17 WEAKLY TYRISTOR SYSTEM
AU23328/92A AU2332892A (en) 1991-07-17 1992-07-01 Turn-off thyristor system
PCT/SE1992/000484 WO1993002477A1 (en) 1991-07-17 1992-07-01 Turn-off thyristor system

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
SE9102189A SE468731B (en) 1991-07-17 1991-07-17 WEAKLY TYRISTOR SYSTEM

Publications (3)

Publication Number Publication Date
SE9102189D0 true SE9102189D0 (en) 1991-07-17
SE9102189L SE9102189L (en) 1993-01-18
SE468731B SE468731B (en) 1993-03-08

Family

ID=20383338

Family Applications (1)

Application Number Title Priority Date Filing Date
SE9102189A SE468731B (en) 1991-07-17 1991-07-17 WEAKLY TYRISTOR SYSTEM

Country Status (3)

Country Link
AU (1) AU2332892A (en)
SE (1) SE468731B (en)
WO (1) WO1993002477A1 (en)

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
ZA853266B (en) * 1984-05-02 1985-12-24 Int Standard Electric Corp Semiconductor device and arrangement
DE3689680T2 (en) * 1985-09-30 1994-06-23 Toshiba Kawasaki Kk Thyristor that can be switched off by means of a control electrode with independent ignition / extinguishing control transistors.
US4816982A (en) * 1987-11-23 1989-03-28 Viteq Corporation AC to DC power converter with integrated line current control for improving power factor
ATE93654T1 (en) * 1988-04-22 1993-09-15 Asea Brown Boveri SWITCH-OFF POWER SEMICONDUCTOR COMPONENT.
SE463235B (en) * 1989-02-23 1990-10-22 Asea Brown Boveri MOS FIELD POWER TRANSISTOR CONTROL TYRISTOR
US5016076A (en) * 1990-02-28 1991-05-14 At&T Bell Laboratories Lateral MOS controlled thyristor

Also Published As

Publication number Publication date
SE468731B (en) 1993-03-08
SE9102189L (en) 1993-01-18
AU2332892A (en) 1993-02-23
WO1993002477A1 (en) 1993-02-04

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