AU2332892A - Turn-off thyristor system - Google Patents
Turn-off thyristor systemInfo
- Publication number
- AU2332892A AU2332892A AU23328/92A AU2332892A AU2332892A AU 2332892 A AU2332892 A AU 2332892A AU 23328/92 A AU23328/92 A AU 23328/92A AU 2332892 A AU2332892 A AU 2332892A AU 2332892 A AU2332892 A AU 2332892A
- Authority
- AU
- Australia
- Prior art keywords
- turn
- thyristor system
- thyristor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
- H01L29/7404—Thyristor-type devices, e.g. having four-zone regenerative action structurally associated with at least one other device
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/567—Circuits characterised by the use of more than one type of semiconductor device, e.g. BIMOS, composite devices such as IGBT
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/72—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices having more than two PN junctions; having more than three electrodes; having more than one electrode connected to the same conductivity region
- H03K17/73—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices having more than two PN junctions; having more than three electrodes; having more than one electrode connected to the same conductivity region for dc voltages or currents
- H03K17/732—Measures for enabling turn-off
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Thyristors (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
SE9102189 | 1991-07-17 | ||
SE9102189A SE468731B (en) | 1991-07-17 | 1991-07-17 | WEAKLY TYRISTOR SYSTEM |
Publications (1)
Publication Number | Publication Date |
---|---|
AU2332892A true AU2332892A (en) | 1993-02-23 |
Family
ID=20383338
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AU23328/92A Abandoned AU2332892A (en) | 1991-07-17 | 1992-07-01 | Turn-off thyristor system |
Country Status (3)
Country | Link |
---|---|
AU (1) | AU2332892A (en) |
SE (1) | SE468731B (en) |
WO (1) | WO1993002477A1 (en) |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
ZA853266B (en) * | 1984-05-02 | 1985-12-24 | Int Standard Electric Corp | Semiconductor device and arrangement |
DE3689680T2 (en) * | 1985-09-30 | 1994-06-23 | Toshiba Kawasaki Kk | Thyristor that can be switched off by means of a control electrode with independent ignition / extinguishing control transistors. |
US4816982A (en) * | 1987-11-23 | 1989-03-28 | Viteq Corporation | AC to DC power converter with integrated line current control for improving power factor |
ATE93654T1 (en) * | 1988-04-22 | 1993-09-15 | Asea Brown Boveri | SWITCH-OFF POWER SEMICONDUCTOR COMPONENT. |
SE463235B (en) * | 1989-02-23 | 1990-10-22 | Asea Brown Boveri | MOS FIELD POWER TRANSISTOR CONTROL TYRISTOR |
US5016076A (en) * | 1990-02-28 | 1991-05-14 | At&T Bell Laboratories | Lateral MOS controlled thyristor |
-
1991
- 1991-07-17 SE SE9102189A patent/SE468731B/en not_active IP Right Cessation
-
1992
- 1992-07-01 AU AU23328/92A patent/AU2332892A/en not_active Abandoned
- 1992-07-01 WO PCT/SE1992/000484 patent/WO1993002477A1/en active Application Filing
Also Published As
Publication number | Publication date |
---|---|
SE468731B (en) | 1993-03-08 |
SE9102189L (en) | 1993-01-18 |
WO1993002477A1 (en) | 1993-02-04 |
SE9102189D0 (en) | 1991-07-17 |
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