SE8603126D0 - CMOS INTEGRATED CIRCUIT AND METHOD OF MANUFACTURING A SUIT - Google Patents

CMOS INTEGRATED CIRCUIT AND METHOD OF MANUFACTURING A SUIT

Info

Publication number
SE8603126D0
SE8603126D0 SE8603126A SE8603126A SE8603126D0 SE 8603126 D0 SE8603126 D0 SE 8603126D0 SE 8603126 A SE8603126 A SE 8603126A SE 8603126 A SE8603126 A SE 8603126A SE 8603126 D0 SE8603126 D0 SE 8603126D0
Authority
SE
Sweden
Prior art keywords
trench
depth
suit
manufacturing
integrated circuit
Prior art date
Application number
SE8603126A
Other languages
Swedish (sv)
Other versions
SE8603126L (en
Inventor
S T Hsu
D W Flatley
Original Assignee
Rca Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rca Corp filed Critical Rca Corp
Publication of SE8603126D0 publication Critical patent/SE8603126D0/en
Publication of SE8603126L publication Critical patent/SE8603126L/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8232—Field-effect technology
    • H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
    • H01L21/8238—Complementary field-effect transistors, e.g. CMOS
    • H01L21/823878—Complementary field-effect transistors, e.g. CMOS isolation region manufacturing related aspects, e.g. to avoid interaction of isolation region with adjacent structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/76224—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials
    • H01L21/76229—Concurrent filling of a plurality of trenches having a different trench shape or dimension, e.g. rectangular and V-shaped trenches, wide and narrow trenches, shallow and deep trenches
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
    • H01L27/0928—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors comprising both N- and P- wells in the substrate, e.g. twin-tub

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Element Separation (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)

Abstract

An integrated CMOS circuit has at least one trench filled with insulating material in a principal face of a substrate composed of monocrystalline silicon. A p-type zone extends down into the substrate to a depth greater than the depth of the trench along one side wall of the trench from the principal face. In addition, an n-type zone extends down into the substrate to a depth greater than the depth of the trench along the other side of the trench from the principal face and makes contact with the p-type zone underneath the floor of the trench. A separate MOS transistor is formed in each of the zones.
SE8603126A 1985-08-05 1986-07-15 CMOS INTEGRATED CIRCUIT AND METHOD OF MANUFACTURING A SUIT SE8603126L (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US76244185A 1985-08-05 1985-08-05

Publications (2)

Publication Number Publication Date
SE8603126D0 true SE8603126D0 (en) 1986-07-15
SE8603126L SE8603126L (en) 1987-02-06

Family

ID=25065055

Family Applications (1)

Application Number Title Priority Date Filing Date
SE8603126A SE8603126L (en) 1985-08-05 1986-07-15 CMOS INTEGRATED CIRCUIT AND METHOD OF MANUFACTURING A SUIT

Country Status (4)

Country Link
JP (1) JPS6338251A (en)
KR (1) KR870002656A (en)
DE (1) DE3625742C2 (en)
SE (1) SE8603126L (en)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5206535A (en) * 1988-03-24 1993-04-27 Seiko Epson Corporation Semiconductor device structure
KR940003218B1 (en) * 1988-03-24 1994-04-16 세이꼬 엡슨 가부시끼가이샤 Forming trench in semiconductor substate with rounded corners
US4954459A (en) * 1988-05-12 1990-09-04 Advanced Micro Devices, Inc. Method of planarization of topologies in integrated circuit structures
JP2579211B2 (en) * 1989-01-18 1997-02-05 三菱電機株式会社 Method for manufacturing semiconductor device
JPH0574927A (en) * 1991-09-13 1993-03-26 Nec Corp Production of semiconductor device
US5498565A (en) * 1991-11-29 1996-03-12 Sony Corporation Method of forming trench isolation having polishing step and method of manufacturing semiconductor device
JP2621765B2 (en) * 1992-07-30 1997-06-18 日本電気株式会社 Method for manufacturing element isolation structure of CMOS semiconductor device
EP0637062B1 (en) * 1993-07-27 1997-06-04 Siemens Aktiengesellschaft Process for manufacturing semi-conducteur device with planarized surface and application to the manufacturing of bipolar transistors and DRAM
KR950034673A (en) * 1994-04-20 1995-12-28 윌리엄 이. 힐러 Transistor isolation method and device using low-k dielectric
US5683945A (en) * 1996-05-16 1997-11-04 Siemens Aktiengesellschaft Uniform trench fill recess by means of isotropic etching
JP2000012687A (en) 1998-06-23 2000-01-14 Mitsubishi Electric Corp Semiconductor device and manufacture thereof

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5986263A (en) * 1982-11-09 1984-05-18 Nec Corp Manufacture of semiconductor device
DE3472604D1 (en) * 1983-10-11 1988-08-11 American Telephone & Telegraph Semiconductor integrated circuits containing complementary metal oxide semiconductor devices
WO1985004525A1 (en) * 1984-03-29 1985-10-10 Hughes Aircraft Company A latch-up resistant cmos structure for vlsi

Also Published As

Publication number Publication date
JPS6338251A (en) 1988-02-18
SE8603126L (en) 1987-02-06
DE3625742C2 (en) 1995-06-29
KR870002656A (en) 1987-04-06
DE3625742A1 (en) 1987-05-27

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