SE7506873L - Metod for att testa en halvledarminnesmatris. - Google Patents

Metod for att testa en halvledarminnesmatris.

Info

Publication number
SE7506873L
SE7506873L SE7506873A SE7506873A SE7506873L SE 7506873 L SE7506873 L SE 7506873L SE 7506873 A SE7506873 A SE 7506873A SE 7506873 A SE7506873 A SE 7506873A SE 7506873 L SE7506873 L SE 7506873L
Authority
SE
Sweden
Prior art keywords
semicular
testing
memory matrix
matrix
memory
Prior art date
Application number
SE7506873A
Other languages
English (en)
Other versions
SE406829B (sv
Inventor
W M Chu
G Sonoda
Original Assignee
Ibm
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ibm filed Critical Ibm
Publication of SE7506873L publication Critical patent/SE7506873L/sv
Publication of SE406829B publication Critical patent/SE406829B/sv

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C29/08—Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
    • G11C29/12—Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details
    • G11C29/14—Implementation of control logic, e.g. test mode decoders
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C29/50—Marginal testing, e.g. race, voltage or current testing
SE7506873A 1974-06-26 1975-06-16 Metod for att testa cellerna i en halvledarminnesmatries SE406829B (sv)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/483,268 US3995215A (en) 1974-06-26 1974-06-26 Test technique for semiconductor memory array

Publications (2)

Publication Number Publication Date
SE7506873L true SE7506873L (sv) 1975-12-29
SE406829B SE406829B (sv) 1979-02-26

Family

ID=23919404

Family Applications (1)

Application Number Title Priority Date Filing Date
SE7506873A SE406829B (sv) 1974-06-26 1975-06-16 Metod for att testa cellerna i en halvledarminnesmatries

Country Status (10)

Country Link
US (1) US3995215A (sv)
JP (1) JPS5114238A (sv)
CA (1) CA1048645A (sv)
CH (1) CH581886A5 (sv)
DE (1) DE2527486C3 (sv)
FR (1) FR2276661A1 (sv)
GB (1) GB1476040A (sv)
IT (1) IT1037604B (sv)
NL (1) NL7506539A (sv)
SE (1) SE406829B (sv)

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4208730A (en) * 1978-08-07 1980-06-17 Rca Corporation Precharge circuit for memory array
JPS5914838B2 (ja) * 1978-11-25 1984-04-06 富士通株式会社 フィ−ルドプログラマブル素子
JPS5693189A (en) 1979-12-18 1981-07-28 Fujitsu Ltd Field programable element
JPS57105897A (en) * 1980-12-23 1982-07-01 Fujitsu Ltd Semiconductor storage device
JPS57105898A (en) * 1980-12-23 1982-07-01 Fujitsu Ltd Field programmable element
US4430735A (en) 1981-05-26 1984-02-07 Burroughs Corporation Apparatus and technique for testing IC memories
DE3313441A1 (de) * 1983-04-13 1984-10-18 Siemens AG, 1000 Berlin und 8000 München Halbleiterspeicher
US4719418A (en) * 1985-02-19 1988-01-12 International Business Machines Corporation Defect leakage screen system
EP0195839B1 (en) * 1985-03-29 1989-08-09 Ibm Deutschland Gmbh Stability testing of semiconductor memories
US5208530A (en) * 1986-09-19 1993-05-04 Actel Corporation Testability architecture and techniques for programmable interconnect architecture
US5223792A (en) * 1986-09-19 1993-06-29 Actel Corporation Testability architecture and techniques for programmable interconnect architecture
US5341092A (en) * 1986-09-19 1994-08-23 Actel Corporation Testability architecture and techniques for programmable interconnect architecture
US4768167A (en) * 1986-09-30 1988-08-30 International Business Machines Corporation High speed CMOS latch with alternate data storage and test functions
US4801869A (en) * 1987-04-27 1989-01-31 International Business Machines Corporation Semiconductor defect monitor for diagnosing processing-induced defects
US4779043A (en) * 1987-08-26 1988-10-18 Hewlett-Packard Company Reversed IC test device and method
JPH0268796A (ja) * 1988-09-02 1990-03-08 Fujitsu Ltd 半導体記憶装置
US5072175A (en) * 1990-09-10 1991-12-10 Compaq Computer Corporation Integrated circuit having improved continuity testability and a system incorporating the same
US5528600A (en) * 1991-01-28 1996-06-18 Actel Corporation Testability circuits for logic arrays
US5166608A (en) * 1991-11-07 1992-11-24 Advanced Micro Devices, Inc. Arrangement for high speed testing of field-effect transistors and memory cells employing the same
US5646547A (en) * 1994-04-28 1997-07-08 Xilinx, Inc. Logic cell which can be configured as a latch without static one's problem
US5561367A (en) * 1992-07-23 1996-10-01 Xilinx, Inc. Structure and method for testing wiring segments in an integrated circuit device
US5538141A (en) * 1994-09-27 1996-07-23 Intel Corporation Test flow assurance using memory imprinting
GB2370126B (en) 2000-07-18 2004-01-21 Sgs Thomson Microelectronics Memory testing
US8046655B2 (en) * 2005-05-18 2011-10-25 Stmicroelectronics Pvt. Ltd. Area efficient memory architecture with decoder self test and debug capability
CN100495057C (zh) * 2005-12-22 2009-06-03 中芯国际集成电路制造(上海)有限公司 利用阵列与解码器进行器件表征的方法与***

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3795859A (en) * 1972-07-03 1974-03-05 Ibm Method and apparatus for determining the electrical characteristics of a memory cell having field effect transistors

Also Published As

Publication number Publication date
FR2276661A1 (fr) 1976-01-23
JPS5114238A (en) 1976-02-04
FR2276661B1 (sv) 1977-12-02
DE2527486B2 (de) 1982-09-16
IT1037604B (it) 1979-11-20
US3995215A (en) 1976-11-30
AU8067975A (en) 1976-11-04
SE406829B (sv) 1979-02-26
USB483268I5 (sv) 1976-03-09
NL7506539A (nl) 1975-12-30
CA1048645A (en) 1979-02-13
DE2527486C3 (de) 1983-05-26
GB1476040A (en) 1977-06-10
JPS5415383B2 (sv) 1979-06-14
CH581886A5 (sv) 1976-11-15
DE2527486A1 (de) 1976-01-15

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