SE431806B - Forsterkande tyristor - Google Patents

Forsterkande tyristor

Info

Publication number
SE431806B
SE431806B SE7711699A SE7711699A SE431806B SE 431806 B SE431806 B SE 431806B SE 7711699 A SE7711699 A SE 7711699A SE 7711699 A SE7711699 A SE 7711699A SE 431806 B SE431806 B SE 431806B
Authority
SE
Sweden
Prior art keywords
tyristor
enhancing
enhancing tyristor
Prior art date
Application number
SE7711699A
Other languages
English (en)
Other versions
SE7711699L (sv
Inventor
A P Ferro
V A K Temple
Original Assignee
Gen Electric
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Gen Electric filed Critical Gen Electric
Publication of SE7711699L publication Critical patent/SE7711699L/sv
Publication of SE431806B publication Critical patent/SE431806B/sv

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/111Devices sensitive to infrared, visible or ultraviolet radiation characterised by at least three potential barriers, e.g. photothyristors
    • H01L31/1113Devices sensitive to infrared, visible or ultraviolet radiation characterised by at least three potential barriers, e.g. photothyristors the device being a photothyristor
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70Bipolar devices
    • H01L29/74Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/7428Thyristor-type devices, e.g. having four-zone regenerative action having an amplifying gate structure, e.g. cascade (Darlington) configuration

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Electromagnetism (AREA)
  • Thyristors (AREA)
SE7711699A 1976-10-18 1977-10-17 Forsterkande tyristor SE431806B (sv)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US73320576A 1976-10-18 1976-10-18

Publications (2)

Publication Number Publication Date
SE7711699L SE7711699L (sv) 1978-04-19
SE431806B true SE431806B (sv) 1984-02-27

Family

ID=24946651

Family Applications (1)

Application Number Title Priority Date Filing Date
SE7711699A SE431806B (sv) 1976-10-18 1977-10-17 Forsterkande tyristor

Country Status (6)

Country Link
JP (1) JPS584828B2 (sv)
DE (1) DE2746406C2 (sv)
FR (1) FR2368146A1 (sv)
GB (1) GB1573234A (sv)
IT (1) IT1087185B (sv)
SE (1) SE431806B (sv)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57204163A (en) * 1981-06-11 1982-12-14 Toyo Electric Mfg Co Ltd Semiconductor device
JPS583283A (ja) * 1981-06-30 1983-01-10 Toshiba Corp サイリスタ
JPS5998556A (ja) * 1982-11-26 1984-06-06 Mitsubishi Electric Corp 光トリガサイリスタ
GB2150347B (en) * 1983-11-21 1987-02-25 Westinghouse Brake & Signal Amplifying gate thyristor with zones of different cathode-gate resistance
JPS60192124A (ja) * 1984-03-09 1985-09-30 Daikin Mfg Co Ltd ダンパ−デイスクの摩擦装置
JPS63201246U (sv) * 1987-06-17 1988-12-26

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3611066A (en) * 1969-12-12 1971-10-05 Gen Electric Thyristor with integrated ballasted gate auxiliary thyristor portion
JPS5021346B1 (sv) * 1970-08-14 1975-07-22
GB1346074A (en) * 1971-02-23 1974-02-06 Gen Electric Gate-controlled thyristors
GB1346604A (en) * 1971-02-26 1974-02-13 Gen Electric Gate controlled thyristor
JPS5229592B2 (sv) * 1971-10-01 1977-08-03
JPS539516B2 (sv) * 1971-12-29 1978-04-06
DE2329872C3 (de) * 1973-06-12 1979-04-26 Siemens Ag, 1000 Berlin Und 8000 Muenchen Thyristor
DE2356906A1 (de) * 1973-11-14 1975-05-22 Siemens Ag Thyristor
CH567803A5 (sv) * 1974-01-18 1975-10-15 Bbc Brown Boveri & Cie
DE2407696C3 (de) * 1974-02-18 1979-02-01 Siemens Ag, 1000 Berlin Und 8000 Muenchen Thyristor

Also Published As

Publication number Publication date
IT1087185B (it) 1985-05-31
DE2746406A1 (de) 1978-04-20
FR2368146B1 (sv) 1984-01-06
DE2746406C2 (de) 1983-08-25
GB1573234A (en) 1980-08-20
JPS5368083A (en) 1978-06-17
JPS584828B2 (ja) 1983-01-27
FR2368146A1 (fr) 1978-05-12
SE7711699L (sv) 1978-04-19

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