IT1087185B - Raddrizzatore controllato avente alta sensibilita' di elettrodo di comando e alta capacita' di dv/dt - Google Patents
Raddrizzatore controllato avente alta sensibilita' di elettrodo di comando e alta capacita' di dv/dtInfo
- Publication number
- IT1087185B IT1087185B IT2859577A IT2859577A IT1087185B IT 1087185 B IT1087185 B IT 1087185B IT 2859577 A IT2859577 A IT 2859577A IT 2859577 A IT2859577 A IT 2859577A IT 1087185 B IT1087185 B IT 1087185B
- Authority
- IT
- Italy
- Prior art keywords
- control electrode
- controlled rectifier
- high sensitivity
- high capacity
- capacity
- Prior art date
Links
- 230000035945 sensitivity Effects 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/111—Devices sensitive to infrared, visible or ultraviolet radiation characterised by at least three potential barriers, e.g. photothyristors
- H01L31/1113—Devices sensitive to infrared, visible or ultraviolet radiation characterised by at least three potential barriers, e.g. photothyristors the device being a photothyristor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
- H01L29/7428—Thyristor-type devices, e.g. having four-zone regenerative action having an amplifying gate structure, e.g. cascade (Darlington) configuration
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Electromagnetism (AREA)
- Thyristors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US73320576A | 1976-10-18 | 1976-10-18 |
Publications (1)
Publication Number | Publication Date |
---|---|
IT1087185B true IT1087185B (it) | 1985-05-31 |
Family
ID=24946651
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
IT2859577A IT1087185B (it) | 1976-10-18 | 1977-10-14 | Raddrizzatore controllato avente alta sensibilita' di elettrodo di comando e alta capacita' di dv/dt |
Country Status (6)
Country | Link |
---|---|
JP (1) | JPS584828B2 (it) |
DE (1) | DE2746406C2 (it) |
FR (1) | FR2368146A1 (it) |
GB (1) | GB1573234A (it) |
IT (1) | IT1087185B (it) |
SE (1) | SE431806B (it) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57204163A (en) * | 1981-06-11 | 1982-12-14 | Toyo Electric Mfg Co Ltd | Semiconductor device |
JPS583283A (ja) * | 1981-06-30 | 1983-01-10 | Toshiba Corp | サイリスタ |
JPS5998556A (ja) * | 1982-11-26 | 1984-06-06 | Mitsubishi Electric Corp | 光トリガサイリスタ |
GB2150347B (en) * | 1983-11-21 | 1987-02-25 | Westinghouse Brake & Signal | Amplifying gate thyristor with zones of different cathode-gate resistance |
JPS60192124A (ja) * | 1984-03-09 | 1985-09-30 | Daikin Mfg Co Ltd | ダンパ−デイスクの摩擦装置 |
JPS63201246U (it) * | 1987-06-17 | 1988-12-26 |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3611066A (en) * | 1969-12-12 | 1971-10-05 | Gen Electric | Thyristor with integrated ballasted gate auxiliary thyristor portion |
JPS5021346B1 (it) * | 1970-08-14 | 1975-07-22 | ||
GB1346074A (en) * | 1971-02-23 | 1974-02-06 | Gen Electric | Gate-controlled thyristors |
GB1346604A (en) * | 1971-02-26 | 1974-02-13 | Gen Electric | Gate controlled thyristor |
JPS5229592B2 (it) * | 1971-10-01 | 1977-08-03 | ||
JPS539516B2 (it) * | 1971-12-29 | 1978-04-06 | ||
DE2329872C3 (de) * | 1973-06-12 | 1979-04-26 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | Thyristor |
DE2356906A1 (de) * | 1973-11-14 | 1975-05-22 | Siemens Ag | Thyristor |
CH567803A5 (it) * | 1974-01-18 | 1975-10-15 | Bbc Brown Boveri & Cie | |
DE2407696C3 (de) * | 1974-02-18 | 1979-02-01 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | Thyristor |
-
1977
- 1977-10-14 IT IT2859577A patent/IT1087185B/it active
- 1977-10-15 DE DE19772746406 patent/DE2746406C2/de not_active Expired
- 1977-10-17 FR FR7731185A patent/FR2368146A1/fr active Granted
- 1977-10-17 SE SE7711699A patent/SE431806B/xx not_active IP Right Cessation
- 1977-10-18 JP JP52124159A patent/JPS584828B2/ja not_active Expired
- 1977-10-18 GB GB4324577A patent/GB1573234A/en not_active Expired
Also Published As
Publication number | Publication date |
---|---|
DE2746406C2 (de) | 1983-08-25 |
SE7711699L (sv) | 1978-04-19 |
DE2746406A1 (de) | 1978-04-20 |
JPS5368083A (en) | 1978-06-17 |
SE431806B (sv) | 1984-02-27 |
GB1573234A (en) | 1980-08-20 |
JPS584828B2 (ja) | 1983-01-27 |
FR2368146B1 (it) | 1984-01-06 |
FR2368146A1 (fr) | 1978-05-12 |
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