GB1448150A - Thyristors - Google Patents
ThyristorsInfo
- Publication number
- GB1448150A GB1448150A GB4417873A GB4417873A GB1448150A GB 1448150 A GB1448150 A GB 1448150A GB 4417873 A GB4417873 A GB 4417873A GB 4417873 A GB4417873 A GB 4417873A GB 1448150 A GB1448150 A GB 1448150A
- Authority
- GB
- United Kingdom
- Prior art keywords
- path
- electrode
- regions
- sept
- projections
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 230000002093 peripheral effect Effects 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/083—Anode or cathode regions of thyristors or gated bipolar-mode devices
- H01L29/0839—Cathode regions of thyristors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42308—Gate electrodes for thyristors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
- H01L29/7428—Thyristor-type devices, e.g. having four-zone regenerative action having an amplifying gate structure, e.g. cascade (Darlington) configuration
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Thyristors (AREA)
Abstract
1448150 Thyristors SIEMENS AG 20 Sept 1973 [25 Sept 1972] 44178/73 Heading H1K To ensure that a main thyristor formed by alternate conductivity-type regions 1, 2, 3, 4, Fig. 1, does not fire before an auxiliary thyristor formed by regions 7, 2, 3, 4, the space between an ignition electrode 9 and the inner peripheral path 10 of the P-N junction between regions 7 and 2 has three to nine uniformly spaced zones which are mutually equal and narrower than the remainder of the space. To this end, the electrode 9 and/or the path 10 are provided with three to six corners or projections, up to a maximum total of nine. For example, the electrode 9 may be square and the path 10 circular, Fig. 3, or vice versa (Fig. 4, not shown), or both may be square (Fig. 5, not shown). Alternatively, both may be generally circular, projections being provided on one (Figs. 6, 7, not shown) or on both, Fig. 8.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19722246979 DE2246979C3 (en) | 1972-09-25 | Thyristor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1448150A true GB1448150A (en) | 1976-09-02 |
Family
ID=5857313
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB4417873A Expired GB1448150A (en) | 1972-09-25 | 1973-09-20 | Thyristors |
Country Status (6)
| Country | Link |
|---|---|
| JP (1) | JPS4971877A (en) |
| FR (1) | FR2200627B1 (en) |
| GB (1) | GB1448150A (en) |
| IT (1) | IT993265B (en) |
| NL (1) | NL7310720A (en) |
| SE (1) | SE389226B (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS584467B2 (en) * | 1975-05-23 | 1983-01-26 | 三菱電機株式会社 | Hand tie souchi |
| DE3917100A1 (en) * | 1989-05-26 | 1990-11-29 | Eupec Gmbh & Co Kg | THYRISTOR |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4118987Y1 (en) * | 1965-07-16 | 1966-09-05 | ||
| US3577046A (en) * | 1969-03-21 | 1971-05-04 | Gen Electric | Monolithic compound thyristor with a pilot portion having a metallic electrode with finger portions formed thereon |
-
1973
- 1973-08-02 NL NL7310720A patent/NL7310720A/xx unknown
- 1973-09-18 IT IT2901073A patent/IT993265B/en active
- 1973-09-20 GB GB4417873A patent/GB1448150A/en not_active Expired
- 1973-09-21 JP JP10681273A patent/JPS4971877A/ja active Pending
- 1973-09-24 FR FR7334106A patent/FR2200627B1/fr not_active Expired
- 1973-09-25 SE SE7313032A patent/SE389226B/en unknown
Also Published As
| Publication number | Publication date |
|---|---|
| SE389226B (en) | 1976-10-25 |
| JPS4971877A (en) | 1974-07-11 |
| FR2200627B1 (en) | 1978-08-04 |
| IT993265B (en) | 1975-09-30 |
| DE2246979B2 (en) | 1977-04-14 |
| FR2200627A1 (en) | 1974-04-19 |
| DE2246979A1 (en) | 1974-04-04 |
| NL7310720A (en) | 1974-03-27 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PS | Patent sealed | ||
| PCNP | Patent ceased through non-payment of renewal fee |