SE384949B - MONOLITIC SEMICONDUCTOR DEVICE INCLUDING, INCLUDING A BIPOLER TRANSISTOR AND A FIELD POWER TRANSISTOR AND METHOD FOR ITS MANUFACTURE - Google Patents
MONOLITIC SEMICONDUCTOR DEVICE INCLUDING, INCLUDING A BIPOLER TRANSISTOR AND A FIELD POWER TRANSISTOR AND METHOD FOR ITS MANUFACTUREInfo
- Publication number
- SE384949B SE384949B SE7203982A SE398272A SE384949B SE 384949 B SE384949 B SE 384949B SE 7203982 A SE7203982 A SE 7203982A SE 398272 A SE398272 A SE 398272A SE 384949 B SE384949 B SE 384949B
- Authority
- SE
- Sweden
- Prior art keywords
- transistor
- bipoler
- monolitic
- manufacture
- semiconductor device
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
- H01L27/0617—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type
- H01L27/0623—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type in combination with bipolar transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/2205—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities from the substrate during epitaxy, e.g. autodoping; Preventing or using autodoping
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/74—Making of localized buried regions, e.g. buried collector layers, internal connections substrate contacts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/761—PN junctions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/8238—Complementary field-effect transistors, e.g. CMOS
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8248—Combination of bipolar and field-effect technology
- H01L21/8249—Bipolar and MOS technology
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Bipolar Transistors (AREA)
- Bipolar Integrated Circuits (AREA)
- Element Separation (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US13816171A | 1971-04-28 | 1971-04-28 |
Publications (1)
Publication Number | Publication Date |
---|---|
SE384949B true SE384949B (en) | 1976-05-24 |
Family
ID=22480723
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SE7203982A SE384949B (en) | 1971-04-28 | 1972-03-28 | MONOLITIC SEMICONDUCTOR DEVICE INCLUDING, INCLUDING A BIPOLER TRANSISTOR AND A FIELD POWER TRANSISTOR AND METHOD FOR ITS MANUFACTURE |
Country Status (12)
Country | Link |
---|---|
JP (1) | JPS5037507B1 (en) |
AU (1) | AU459156B2 (en) |
CA (1) | CA966231A (en) |
CH (1) | CH536029A (en) |
DE (1) | DE2219696C3 (en) |
ES (2) | ES402164A1 (en) |
FR (1) | FR2134360B1 (en) |
GB (1) | GB1358612A (en) |
IT (1) | IT947674B (en) |
NL (1) | NL7204804A (en) |
SE (1) | SE384949B (en) |
ZA (1) | ZA721782B (en) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2608267A1 (en) * | 1976-02-28 | 1977-09-08 | Itt Ind Gmbh Deutsche | METHOD OF MANUFACTURING A MONOLITHIC INTEGRATED CIRCUIT |
JPS5851561A (en) * | 1981-09-24 | 1983-03-26 | Hitachi Ltd | Semiconductor integrated circuit device |
JPS58225663A (en) * | 1982-06-23 | 1983-12-27 | Toshiba Corp | Manufacture of semiconductor device |
JPS5955052A (en) * | 1982-09-24 | 1984-03-29 | Hitachi Ltd | Semiconductor integrated circuit device and manufacture thereof |
JPS59177960A (en) * | 1983-03-28 | 1984-10-08 | Hitachi Ltd | Semiconductor device and manufacture thereof |
IT1214808B (en) * | 1984-12-20 | 1990-01-18 | Ates Componenti Elettron | TICO AND SEMICONDUCTOR PROCESS FOR THE FORMATION OF A BURIED LAYER AND OF A COLLECTOR REGION IN A MONOLI DEVICE |
US4727046A (en) * | 1986-07-16 | 1988-02-23 | Fairchild Semiconductor Corporation | Method of fabricating high performance BiCMOS structures having poly emitters and silicided bases |
KR890004420B1 (en) * | 1986-11-04 | 1989-11-03 | 삼성반도체통신 주식회사 | Manufacturing method of bicmos device |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3293087A (en) * | 1963-03-05 | 1966-12-20 | Fairchild Camera Instr Co | Method of making isolated epitaxial field-effect device |
US3481801A (en) * | 1966-10-10 | 1969-12-02 | Frances Hugle | Isolation technique for integrated circuits |
US3479233A (en) * | 1967-01-16 | 1969-11-18 | Ibm | Method for simultaneously forming a buried layer and surface connection in semiconductor devices |
US3440503A (en) * | 1967-05-31 | 1969-04-22 | Westinghouse Electric Corp | Integrated complementary mos-type transistor structure and method of making same |
GB1280022A (en) * | 1968-08-30 | 1972-07-05 | Mullard Ltd | Improvements in and relating to semiconductor devices |
-
1972
- 1972-02-18 IT IT20713/72A patent/IT947674B/en active
- 1972-03-09 GB GB1090072A patent/GB1358612A/en not_active Expired
- 1972-03-15 ZA ZA721782A patent/ZA721782B/en unknown
- 1972-03-16 FR FR727209920A patent/FR2134360B1/fr not_active Expired
- 1972-03-20 CH CH407572A patent/CH536029A/en not_active IP Right Cessation
- 1972-03-28 SE SE7203982A patent/SE384949B/en unknown
- 1972-04-07 JP JP47034578A patent/JPS5037507B1/ja active Pending
- 1972-04-11 NL NL7204804A patent/NL7204804A/xx unknown
- 1972-04-20 CA CA140074356-62*AA patent/CA966231A/en not_active Expired
- 1972-04-21 DE DE2219696A patent/DE2219696C3/en not_active Expired
- 1972-04-27 AU AU41642/72A patent/AU459156B2/en not_active Expired
- 1972-04-27 ES ES402164A patent/ES402164A1/en not_active Expired
- 1972-04-27 ES ES402165A patent/ES402165A1/en not_active Expired
Also Published As
Publication number | Publication date |
---|---|
IT947674B (en) | 1973-05-30 |
AU459156B2 (en) | 1975-03-20 |
JPS5037507B1 (en) | 1975-12-03 |
CA966231A (en) | 1975-04-15 |
DE2219696C3 (en) | 1982-02-18 |
ES402164A1 (en) | 1975-03-01 |
FR2134360B1 (en) | 1974-06-28 |
AU4164272A (en) | 1973-12-20 |
DE2219696B2 (en) | 1978-04-06 |
GB1358612A (en) | 1974-07-03 |
ZA721782B (en) | 1973-10-31 |
NL7204804A (en) | 1972-10-31 |
FR2134360A1 (en) | 1972-12-08 |
DE2219696A1 (en) | 1972-11-16 |
CH536029A (en) | 1973-04-15 |
ES402165A1 (en) | 1975-03-16 |
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