SE0301225L - Apparatus and method for producing monocrystals by gas deposition - Google Patents

Apparatus and method for producing monocrystals by gas deposition

Info

Publication number
SE0301225L
SE0301225L SE0301225A SE0301225A SE0301225L SE 0301225 L SE0301225 L SE 0301225L SE 0301225 A SE0301225 A SE 0301225A SE 0301225 A SE0301225 A SE 0301225A SE 0301225 L SE0301225 L SE 0301225L
Authority
SE
Sweden
Prior art keywords
crystals
preparing
gas deposition
growth surface
vapor species
Prior art date
Application number
SE0301225A
Other languages
Swedish (sv)
Other versions
SE0301225D0 (en
SE524279C2 (en
Inventor
Erik Janzen
Alexandre Ellison
Peter Raaback
Original Assignee
Okmetic Oyj
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to SE0301225A priority Critical patent/SE524279C2/en
Application filed by Okmetic Oyj filed Critical Okmetic Oyj
Publication of SE0301225D0 publication Critical patent/SE0301225D0/en
Priority to DE602004001802T priority patent/DE602004001802T3/en
Priority to AT04008697T priority patent/ATE335872T1/en
Priority to EP04008697A priority patent/EP1471168B2/en
Priority to IT000245A priority patent/ITTO20040245A1/en
Priority to TW93111283A priority patent/TWI259214B/en
Priority to US10/830,047 priority patent/US7361222B2/en
Priority to JP2004127482A priority patent/JP5093974B2/en
Priority to CNB2004100631433A priority patent/CN100414004C/en
Publication of SE0301225L publication Critical patent/SE0301225L/en
Publication of SE524279C2 publication Critical patent/SE524279C2/en
Priority to US12/073,146 priority patent/US20080149020A1/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/301—AIII BV compounds, where A is Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C23C16/303—Nitrides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/32—Carbides
    • C23C16/325—Silicon carbide
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/36—Carbides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/38—Nitrides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

Preparing crystals of silicon carbide, group III-nitride and/or its alloys involves continuously feeding vapor species containing elements of the crystal through an upstream opening (22) of the growth surface of a seed crystal contained in a heated growth enclosure; removing the undeposited vapor species through a opening downstream (25a) of the growth surface and passing an additional gas flow containing a halogen. An Independent claim is included for a device for preparing the crystals.
SE0301225A 2003-04-24 2003-04-24 Preparing crystals of e.g. silicon carbide for semiconductors involves depositing vapor species containing elements of the crystals, to a seed crystal contained in a heated growth enclosure, followed by passing a gas containing a halogen SE524279C2 (en)

Priority Applications (10)

Application Number Priority Date Filing Date Title
SE0301225A SE524279C2 (en) 2003-04-24 2003-04-24 Preparing crystals of e.g. silicon carbide for semiconductors involves depositing vapor species containing elements of the crystals, to a seed crystal contained in a heated growth enclosure, followed by passing a gas containing a halogen
DE602004001802T DE602004001802T3 (en) 2003-04-24 2004-04-13 Apparatus and method for producing single crystals by vapor deposition
AT04008697T ATE335872T1 (en) 2003-04-24 2004-04-13 DEVICE AND METHOD FOR PRODUCING SINGLE CRYSTALS BY VAPOR PHASE DEPOSITION
EP04008697A EP1471168B2 (en) 2003-04-24 2004-04-13 Device and method for producing single crystals by vapour deposition
IT000245A ITTO20040245A1 (en) 2003-04-24 2004-04-20 DEVICE AND METHOD OF PRODUCTION OF SINGLE CRYSTALS FOR DEPOSITION BY STEAM PHASE
TW93111283A TWI259214B (en) 2003-04-24 2004-04-22 Device and method for producing single crystals by vapour deposition
CNB2004100631433A CN100414004C (en) 2003-04-24 2004-04-23 Device and method for producing single crystals by vapor deposition
US10/830,047 US7361222B2 (en) 2003-04-24 2004-04-23 Device and method for producing single crystals by vapor deposition
JP2004127482A JP5093974B2 (en) 2003-04-24 2004-04-23 Single crystal manufacturing apparatus and manufacturing method by vapor phase epitaxy
US12/073,146 US20080149020A1 (en) 2003-04-24 2008-02-29 Device and method to producing single crystals by vapour deposition

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
SE0301225A SE524279C2 (en) 2003-04-24 2003-04-24 Preparing crystals of e.g. silicon carbide for semiconductors involves depositing vapor species containing elements of the crystals, to a seed crystal contained in a heated growth enclosure, followed by passing a gas containing a halogen

Publications (3)

Publication Number Publication Date
SE0301225D0 SE0301225D0 (en) 2003-04-30
SE0301225L true SE0301225L (en) 2004-07-20
SE524279C2 SE524279C2 (en) 2004-07-20

Family

ID=20291135

Family Applications (1)

Application Number Title Priority Date Filing Date
SE0301225A SE524279C2 (en) 2003-04-24 2003-04-24 Preparing crystals of e.g. silicon carbide for semiconductors involves depositing vapor species containing elements of the crystals, to a seed crystal contained in a heated growth enclosure, followed by passing a gas containing a halogen

Country Status (1)

Country Link
SE (1) SE524279C2 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
ITMI20041677A1 (en) * 2004-08-30 2004-11-30 E T C Epitaxial Technology Ct CLEANING PROCESS AND OPERATIONAL PROCESS FOR A CVD REACTOR.

Also Published As

Publication number Publication date
SE0301225D0 (en) 2003-04-30
SE524279C2 (en) 2004-07-20

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