SE0200414D0 - Semiconductor fabrication process lateral pnp transistor, and integrated circuit - Google Patents

Semiconductor fabrication process lateral pnp transistor, and integrated circuit

Info

Publication number
SE0200414D0
SE0200414D0 SE0200414A SE0200414A SE0200414D0 SE 0200414 D0 SE0200414 D0 SE 0200414D0 SE 0200414 A SE0200414 A SE 0200414A SE 0200414 A SE0200414 A SE 0200414A SE 0200414 D0 SE0200414 D0 SE 0200414D0
Authority
SE
Sweden
Prior art keywords
type region
type
forming
pnp transistor
sup
Prior art date
Application number
SE0200414A
Other languages
English (en)
Inventor
Hans Norstroem
Ted Johansson
Original Assignee
Ericsson Telefon Ab L M
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ericsson Telefon Ab L M filed Critical Ericsson Telefon Ab L M
Priority to SE0200414A priority Critical patent/SE0200414D0/sv
Publication of SE0200414D0 publication Critical patent/SE0200414D0/sv
Priority to TW091105582A priority patent/TW559857B/zh
Priority to PCT/SE2003/000221 priority patent/WO2003069669A1/en
Priority to AU2003206338A priority patent/AU2003206338A1/en
Priority to US10/918,057 priority patent/US7217609B2/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66234—Bipolar junction transistors [BJT]
    • H01L29/6625—Lateral transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8248—Combination of bipolar and field-effect technology
    • H01L21/8249—Bipolar and MOS technology
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
    • H01L27/0617—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type
    • H01L27/0623—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type in combination with bipolar transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors
    • H01L29/735—Lateral transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Bipolar Transistors (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Bipolar Integrated Circuits (AREA)
SE0200414A 2002-02-13 2002-02-13 Semiconductor fabrication process lateral pnp transistor, and integrated circuit SE0200414D0 (sv)

Priority Applications (5)

Application Number Priority Date Filing Date Title
SE0200414A SE0200414D0 (sv) 2002-02-13 2002-02-13 Semiconductor fabrication process lateral pnp transistor, and integrated circuit
TW091105582A TW559857B (en) 2002-02-13 2002-03-22 Semiconductor fabrication process, lateral PNP transistor, and integrated circuit
PCT/SE2003/000221 WO2003069669A1 (en) 2002-02-13 2003-02-11 Semiconductor fabrication process, lateral pnp transistor, and integrated circuit
AU2003206338A AU2003206338A1 (en) 2002-02-13 2003-02-11 Semiconductor fabrication process, lateral pnp transistor, and integrated circuit
US10/918,057 US7217609B2 (en) 2002-02-13 2004-08-13 Semiconductor fabrication process, lateral PNP transistor, and integrated circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
SE0200414A SE0200414D0 (sv) 2002-02-13 2002-02-13 Semiconductor fabrication process lateral pnp transistor, and integrated circuit

Publications (1)

Publication Number Publication Date
SE0200414D0 true SE0200414D0 (sv) 2002-02-13

Family

ID=20286942

Family Applications (1)

Application Number Title Priority Date Filing Date
SE0200414A SE0200414D0 (sv) 2002-02-13 2002-02-13 Semiconductor fabrication process lateral pnp transistor, and integrated circuit

Country Status (5)

Country Link
US (1) US7217609B2 (sv)
AU (1) AU2003206338A1 (sv)
SE (1) SE0200414D0 (sv)
TW (1) TW559857B (sv)
WO (1) WO2003069669A1 (sv)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7550787B2 (en) * 2005-05-31 2009-06-23 International Business Machines Corporation Varied impurity profile region formation for varying breakdown voltage of devices
DE102006059113A1 (de) * 2006-12-08 2008-06-12 IHP GmbH - Innovations for High Performance Microelectronics/Institut für innovative Mikroelektronik Komplementäre Bipolar-Halbleitervorrichtung
US7652329B2 (en) * 2007-07-13 2010-01-26 Semiconductor Components Industries, Llc Vertical MOS transistor and method therefor
US8674454B2 (en) 2009-02-20 2014-03-18 Mediatek Inc. Lateral bipolar junction transistor
US7897995B2 (en) * 2009-04-07 2011-03-01 Mediatek Inc. Lateral bipolar junction transistor with reduced base resistance
US8916951B2 (en) * 2011-09-23 2014-12-23 Alpha And Omega Semiconductor Incorporated Lateral PNP bipolar transistor formed with multiple epitaxial layers
US9312335B2 (en) 2011-09-23 2016-04-12 Alpha And Omega Semiconductor Incorporated Lateral PNP bipolar transistor with narrow trench emitter
US8921194B2 (en) 2011-11-11 2014-12-30 International Business Machines Corporation PNP bipolar junction transistor fabrication using selective epitaxy
CN104241281B (zh) * 2013-06-18 2017-09-01 中芯国际集成电路制造(上海)有限公司 一种集成电路及其制造方法
US9324828B2 (en) 2014-08-12 2016-04-26 International Business Machines Corporation Vertical P-type, N-type, P-type (PNP) junction integrated circuit (IC) structure, and methods of forming
KR101666753B1 (ko) 2015-06-18 2016-10-14 주식회사 동부하이텍 고비저항 기판 상에 형성된 반도체 소자 및 무선 주파수 모듈
KR101692625B1 (ko) 2015-06-18 2017-01-03 주식회사 동부하이텍 고비저항 기판 상에 형성된 반도체 소자 및 무선 주파수 모듈
KR101666752B1 (ko) 2015-06-18 2016-10-14 주식회사 동부하이텍 고비저항 기판 상에 형성된 반도체 소자 및 무선 주파수 모듈
US9847408B1 (en) 2016-06-21 2017-12-19 Globalfoundries Inc. Fabrication of integrated circuit structures for bipolor transistors

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA1188418A (en) * 1982-01-04 1985-06-04 Jay A. Shideler Oxide isolation process for standard ram/prom and lateral pnp cell ram
CH648434A5 (fr) 1982-04-23 1985-03-15 Centre Electron Horloger Dispositif semiconducteur presentant une caracteristique de fonctionnement d'un transistor bipolaire et circuit m0s incorporant un tel dispositif.
JPH0817233B2 (ja) * 1987-11-11 1996-02-21 三菱電機株式会社 絶縁ゲート型バイポーラトランジスタ
US5091760A (en) * 1989-04-14 1992-02-25 Kabushiki Kaisha Toshiba Semiconductor device
US5696006A (en) * 1992-06-24 1997-12-09 Matsushita Electric Industrial Co., Ltd. Method of manufacturing Bi-MOS device
US5326710A (en) * 1992-09-10 1994-07-05 National Semiconductor Corporation Process for fabricating lateral PNP transistor structure and BICMOS IC
FR2756104B1 (fr) * 1996-11-19 1999-01-29 Sgs Thomson Microelectronics Fabrication de circuits integres bipolaires/cmos
FR2762139B1 (fr) * 1997-04-15 1999-07-02 Sgs Thomson Microelectronics Transistor pnp lateral dans une technologie bicmos
JP2001203288A (ja) * 2000-01-20 2001-07-27 Mitsubishi Electric Corp 半導体装置の製造方法

Also Published As

Publication number Publication date
WO2003069669A1 (en) 2003-08-21
US20050035412A1 (en) 2005-02-17
AU2003206338A1 (en) 2003-09-04
US7217609B2 (en) 2007-05-15
TW559857B (en) 2003-11-01

Similar Documents

Publication Publication Date Title
US6225181B1 (en) Trench isolated bipolar transistor structure integrated with CMOS technology
SE0103036D0 (sv) Semiconductor process and integrated circuit
WO2008152026A4 (en) Vertical current controlled silicon on insulator (soi) device and method of forming same
SE0200414D0 (sv) Semiconductor fabrication process lateral pnp transistor, and integrated circuit
KR860007863A (ko) 반도체 장치
KR840005927A (ko) 반도체 집적 회로 장치 및 그의 제조 방법
TW200721483A (en) Semiconductor device with a bipolar transistor and method of manufacturing such a device
JP3493681B2 (ja) 埋込みアバランシュ・ダイオード
KR100482950B1 (ko) 반도체소자 및 그 제조방법
SE0103805D0 (sv) Lateral PNP transistor device, integrated circuit, and fabrication process thereof
EP0348626A3 (en) Process for fabricating isolated vertical bipolar and jfet transistors
KR910015063A (ko) 상보형 쌍극 트랜지스터
US20100148276A1 (en) Bipolar integration without additional masking steps
JPS61245563A (ja) バイポ−ラｃｍｏｓ半導体装置
EP0347550A3 (en) Process for fabricating isolated vertical and super beta bipolar transistors
JPS62219555A (ja) バイポ−ラ・ｍｏｓ半導体装置
JPS61269360A (ja) 半導体装置とその製造方法
ATE407453T1 (de) Herstellungsverfahren für ein halbleiter- bipolartransistor-bauelement
KR910010734A (ko) 반도체 집적 회로 및 그 제조방법
KR960015888A (ko) 반도체 전력소자 및 그 제조방법
JPH03116774A (ja) 半導体装置の製造方法
Bashir et al. A 85 volt high performance silicon complementary bipolar technology for high voltage analog applications
JPH01112763A (ja) 半導体装置
KR19990002164A (ko) 바이폴라 트랜지스터 및 그 제조 방법
JPH07101717B2 (ja) 半導体装置の製造方法