RU98116457A - FIELD ELECTRON EMITTER - Google Patents

FIELD ELECTRON EMITTER

Info

Publication number
RU98116457A
RU98116457A RU98116457/09A RU98116457A RU98116457A RU 98116457 A RU98116457 A RU 98116457A RU 98116457/09 A RU98116457/09 A RU 98116457/09A RU 98116457 A RU98116457 A RU 98116457A RU 98116457 A RU98116457 A RU 98116457A
Authority
RU
Russia
Prior art keywords
electron emitter
field electron
emitter according
carbon material
porous carbon
Prior art date
Application number
RU98116457/09A
Other languages
Russian (ru)
Other versions
RU2149477C1 (en
Inventor
С.К. Гордеев
А.И. Косарев
А.Н. Андронов
А.Я. Виноградов
Original Assignee
Акционерное общество закрытого типа "Карбид"
Filing date
Publication date
Application filed by Акционерное общество закрытого типа "Карбид" filed Critical Акционерное общество закрытого типа "Карбид"
Priority to RU98116457/09A priority Critical patent/RU2149477C1/en
Priority claimed from RU98116457/09A external-priority patent/RU2149477C1/en
Priority to PCT/EP1999/005324 priority patent/WO2000010190A2/en
Priority to AU54135/99A priority patent/AU5413599A/en
Publication of RU98116457A publication Critical patent/RU98116457A/en
Application granted granted Critical
Publication of RU2149477C1 publication Critical patent/RU2149477C1/en

Links

Claims (7)

1. Полевой эмиттер электронов, включающий два расположенных один на другом слоя углеродных материалов, отличающийся тем, что нижний слой выполнен из пористого углеродного материала, имеющего каркасное строение, с открытой пористостью 35-70 об. %, а верхний слой получен плазмохимическим осаждением в условиях емкостного разряда из смеси углеводорода или углеводородов с водородом.1. A field electron emitter comprising two layers of carbon materials arranged on top of one another, characterized in that the lower layer is made of a porous carbon material having a frame structure with an open porosity of 35-70 vol. %, and the upper layer was obtained by plasma-chemical deposition under conditions of capacitive discharge from a mixture of hydrocarbon or hydrocarbons with hydrogen. 2. Полевой эмиттер электронов по п. 1, отличающийся тем, что нижний слой выполнен из пористого углеродного материала, включающего алмазные частицы с размером менее 10 нм, связанные пироуглеродной матрицей. 2. The field electron emitter according to claim 1, characterized in that the lower layer is made of a porous carbon material including diamond particles with a size of less than 10 nm, bound by a pyrocarbon matrix. 3. Полевой эмиттер электронов по п.2, отличающийся тем, что в пористом углеродном материале отношение массы пироуглеродной матрицы к массе алмазных частиц составляет 0,08-0,50. 3. The field electron emitter according to claim 2, characterized in that in the porous carbon material, the ratio of the mass of the pyrocarbon matrix to the mass of diamond particles is 0.08-0.50. 4. Полевой эмиттер электронов по п. 1, отличающийся тем, что нижний слой выполнен из пористого углеродного материала, содержащего нанопоры размером 0,8-2,0 нм, объемное содержание которых составляет 20-50 об.%. 4. The field electron emitter according to claim 1, characterized in that the lower layer is made of a porous carbon material containing nanopores of 0.8-2.0 nm in size, the volume content of which is 20-50 vol.%. 5. Полевой эмиттер электронов по п.4, отличающийся тем, что нанопоры сформированы в пористом углеродном материале за счет вытравливания металла или неметалла из ковалентных или металлоподобных карбидов путем их обработки в атмосфере хлора при повышенных температурах. 5. The field electron emitter according to claim 4, characterized in that the nanopores are formed in a porous carbon material by etching a metal or non-metal from covalent or metal-like carbides by processing them in a chlorine atmosphere at elevated temperatures. 6. Полевой эмиттер электронов по п.1, отличающийся тем, что верхний слой осажден при частоте 12-100 МГц и температуре 200 - 400°С. 6. The field electron emitter according to claim 1, characterized in that the upper layer is deposited at a frequency of 12-100 MHz and a temperature of 200 - 400 ° C. 7. Полевой эмиттер электронов по п.6, отличающийся тем, что верхний слой осажден на предварительно активированную поверхность нижнего слоя. 7. The field electron emitter according to claim 6, characterized in that the upper layer is deposited on a previously activated surface of the lower layer.
RU98116457/09A 1998-08-12 1998-08-12 Field-effect electron emitter RU2149477C1 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
RU98116457/09A RU2149477C1 (en) 1998-08-12 1998-08-12 Field-effect electron emitter
PCT/EP1999/005324 WO2000010190A2 (en) 1998-08-12 1999-07-26 A field electron emitter and a method for producing the field electron emitter
AU54135/99A AU5413599A (en) 1998-08-12 1999-07-26 A field electron emitter and a method for producing the field electron emitter

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
RU98116457/09A RU2149477C1 (en) 1998-08-12 1998-08-12 Field-effect electron emitter

Publications (2)

Publication Number Publication Date
RU98116457A true RU98116457A (en) 2000-04-20
RU2149477C1 RU2149477C1 (en) 2000-05-20

Family

ID=20210078

Family Applications (1)

Application Number Title Priority Date Filing Date
RU98116457/09A RU2149477C1 (en) 1998-08-12 1998-08-12 Field-effect electron emitter

Country Status (3)

Country Link
AU (1) AU5413599A (en)
RU (1) RU2149477C1 (en)
WO (1) WO2000010190A2 (en)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6181055B1 (en) 1998-10-12 2001-01-30 Extreme Devices, Inc. Multilayer carbon-based field emission electron device for high current density applications
RU2210134C2 (en) 2000-07-12 2003-08-10 ООО "Высокие технологии" Cold-emission cathode and flat-panel display
KR20030046487A (en) * 2000-10-04 2003-06-12 익스트림 디바이스 인코포레이티드 Multilayer carbon-based field emission electron device for high current density applications
WO2002029843A1 (en) * 2000-10-04 2002-04-11 Extreme Devices Incorporated Carbon-based field emission electron device for high current density applications
US6624578B2 (en) 2001-06-04 2003-09-23 Extreme Devices Incorporated Cathode ray tube having multiple field emission cathodes
JP3535871B2 (en) 2002-06-13 2004-06-07 キヤノン株式会社 Electron emitting device, electron source, image display device, and method of manufacturing electron emitting device
JP4154356B2 (en) 2003-06-11 2008-09-24 キヤノン株式会社 Electron emitting device, electron source, image display device, and television
JP4667031B2 (en) 2004-12-10 2011-04-06 キヤノン株式会社 Manufacturing method of electron-emitting device, and manufacturing method of electron source and image display device using the manufacturing method
US7786662B2 (en) * 2005-05-19 2010-08-31 Texas Instruments Incorporated Display using a movable electron field emitter and method of manufacture thereof

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5602439A (en) * 1994-02-14 1997-02-11 The Regents Of The University Of California, Office Of Technology Transfer Diamond-graphite field emitters
DE19727606A1 (en) * 1997-06-28 1999-01-07 Philips Patentverwaltung Electron emitter with nanocrystalline diamond
DE69834673T2 (en) * 1997-09-30 2006-10-26 Noritake Co., Ltd., Nagoya Method for producing an electron-emitting source
US6129901A (en) * 1997-11-18 2000-10-10 Martin Moskovits Controlled synthesis and metal-filling of aligned carbon nanotubes

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