RU94011577A - Электронный электер и устройство с автоэлектронной эмиссией - Google Patents
Электронный электер и устройство с автоэлектронной эмиссиейInfo
- Publication number
- RU94011577A RU94011577A RU94011577A RU94011577A RU94011577A RU 94011577 A RU94011577 A RU 94011577A RU 94011577 A RU94011577 A RU 94011577A RU 94011577 A RU94011577 A RU 94011577A RU 94011577 A RU94011577 A RU 94011577A
- Authority
- RU
- Russia
- Prior art keywords
- electronic
- elector
- auto
- emission
- electrically active
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
- H01J1/02—Main electrodes
- H01J1/30—Cold cathodes, e.g. field-emissive cathode
- H01J1/304—Field-emissive cathodes
- H01J1/3042—Field-emissive cathodes microengineered, e.g. Spindt-type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2201/00—Electrodes common to discharge tubes
- H01J2201/30—Cold cathodes
- H01J2201/304—Field emission cathodes
- H01J2201/30446—Field emission cathodes characterised by the emitter material
- H01J2201/30453—Carbon types
- H01J2201/30457—Diamond
Landscapes
- Cold Cathode And The Manufacture (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Claims (1)
- Электронный эмиттер образован слоем алмазоподобного углерода, имеющего структуру алмазной связи, с электрически активным дефектом в точке эмиссии. Электрически активный дефект действует подобно очень тонкому электронному эмиттеру с очень низкой работой выхода и улучшенными токовыми характеристиками, включающими улучшенный ток насыщения.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US08/011,595 US5619092A (en) | 1993-02-01 | 1993-02-01 | Enhanced electron emitter |
US08/011,595 | 1993-02-01 |
Publications (1)
Publication Number | Publication Date |
---|---|
RU94011577A true RU94011577A (ru) | 1995-12-10 |
Family
ID=21751109
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
RU94011577A RU94011577A (ru) | 1993-02-01 | 1994-04-08 | Электронный электер и устройство с автоэлектронной эмиссией |
Country Status (7)
Country | Link |
---|---|
US (4) | US5619092A (ru) |
EP (1) | EP0609532B1 (ru) |
JP (1) | JP3171290B2 (ru) |
CN (1) | CN1059050C (ru) |
DE (1) | DE69320617T2 (ru) |
RU (1) | RU94011577A (ru) |
TW (1) | TW232076B (ru) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2005006378A1 (fr) * | 2003-07-11 | 2005-01-20 | Tetranova Ltd. | Cathodes a froid en materiaux a base de carbone |
Families Citing this family (41)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5619092A (en) * | 1993-02-01 | 1997-04-08 | Motorola | Enhanced electron emitter |
AU5897594A (en) * | 1993-06-02 | 1994-12-20 | Microelectronics And Computer Technology Corporation | Amorphic diamond film flat field emission cathode |
CN1134754A (zh) * | 1993-11-04 | 1996-10-30 | 微电子及计算机技术公司 | 制作平板显示***和元件的方法 |
US5602439A (en) * | 1994-02-14 | 1997-02-11 | The Regents Of The University Of California, Office Of Technology Transfer | Diamond-graphite field emitters |
US5578901A (en) * | 1994-02-14 | 1996-11-26 | E. I. Du Pont De Nemours And Company | Diamond fiber field emitters |
US6246168B1 (en) | 1994-08-29 | 2001-06-12 | Canon Kabushiki Kaisha | Electron-emitting device, electron source and image-forming apparatus as well as method of manufacturing the same |
AU728397B2 (en) * | 1994-08-29 | 2001-01-11 | Canon Kabushiki Kaisha | Electron-emitting device, electron source and image-forming apparatus as well as method of manufacturing the same |
US5439753A (en) | 1994-10-03 | 1995-08-08 | Motorola, Inc. | Electron emissive film |
US5623180A (en) * | 1994-10-31 | 1997-04-22 | Lucent Technologies Inc. | Electron field emitters comprising particles cooled with low voltage emitting material |
US5637950A (en) * | 1994-10-31 | 1997-06-10 | Lucent Technologies Inc. | Field emission devices employing enhanced diamond field emitters |
WO1997006549A1 (en) * | 1995-08-04 | 1997-02-20 | Printable Field Emmitters Limited | Field electron emission materials and devices |
WO1997007522A1 (en) * | 1995-08-14 | 1997-02-27 | Sandia Corporation | Method for creation of controlled field emission sites |
US5982095A (en) * | 1995-09-19 | 1999-11-09 | Lucent Technologies Inc. | Plasma displays having electrodes of low-electron affinity materials |
JP3580930B2 (ja) * | 1996-01-18 | 2004-10-27 | 住友電気工業株式会社 | 電子放出装置 |
US6008502A (en) * | 1996-03-27 | 1999-12-28 | Matsushita Electric Industrial Co., Ltd. | Diamond electron emitting device having an insulative electron supply layer |
JP3745844B2 (ja) * | 1996-10-14 | 2006-02-15 | 浜松ホトニクス株式会社 | 電子管 |
US5973452A (en) * | 1996-11-01 | 1999-10-26 | Si Diamond Technology, Inc. | Display |
US6020677A (en) * | 1996-11-13 | 2000-02-01 | E. I. Du Pont De Nemours And Company | Carbon cone and carbon whisker field emitters |
US6445114B1 (en) | 1997-04-09 | 2002-09-03 | Matsushita Electric Industrial Co., Ltd. | Electron emitting device and method of manufacturing the same |
US5869922A (en) * | 1997-08-13 | 1999-02-09 | Si Diamond Technology, Inc. | Carbon film for field emission devices |
DE19757141A1 (de) * | 1997-12-20 | 1999-06-24 | Philips Patentverwaltung | Array aus Diamant/wasserstoffhaltigen Elektroden |
EP1056110B1 (en) | 1998-02-09 | 2009-12-16 | Panasonic Corporation | Electron emitting device, method of producing the same, and method of driving the same; and image display comprising the electron emitting device and method of producing the same |
FR2780808B1 (fr) * | 1998-07-03 | 2001-08-10 | Thomson Csf | Dispositif a emission de champ et procedes de fabrication |
US6181055B1 (en) | 1998-10-12 | 2001-01-30 | Extreme Devices, Inc. | Multilayer carbon-based field emission electron device for high current density applications |
US6441550B1 (en) | 1998-10-12 | 2002-08-27 | Extreme Devices Inc. | Carbon-based field emission electron device for high current density applications |
KR100311209B1 (ko) * | 1998-10-29 | 2001-12-17 | 박종섭 | 전계방출표시소자의제조방법 |
DE19910156C2 (de) * | 1999-02-26 | 2002-07-18 | Hahn Meitner Inst Berlin Gmbh | Elektronenemitter und Verfahren zu dessen Herstellung |
US6059627A (en) * | 1999-03-08 | 2000-05-09 | Motorola, Inc. | Method of providing uniform emission current |
RU2155412C1 (ru) * | 1999-07-13 | 2000-08-27 | Закрытое акционерное общество "Патинор Коутингс Лимитед" | Плоский люминесцентный экран, способ изготовления плоского люминесцентного экрана и способ получения изображения на плоском люминесцентном экране |
FR2803944B1 (fr) * | 2000-01-14 | 2002-06-14 | Thomson Tubes Electroniques | Cathode generatrice d'electrons et son procede de fabrication |
DE10036889C1 (de) * | 2000-07-28 | 2002-04-18 | Infineon Technologies Ag | Verfahren und Einrichtung zur Bestimmung eines in einem differentiellen Sendesignalabschnitt eines Funkgerätes auftretenden Offsetwerts |
US6686696B2 (en) * | 2001-03-08 | 2004-02-03 | Genvac Aerospace Corporation | Magnetron with diamond coated cathode |
US6554673B2 (en) | 2001-07-31 | 2003-04-29 | The United States Of America As Represented By The Secretary Of The Navy | Method of making electron emitters |
US6847045B2 (en) | 2001-10-12 | 2005-01-25 | Hewlett-Packard Development Company, L.P. | High-current avalanche-tunneling and injection-tunneling semiconductor-dielectric-metal stable cold emitter, which emulates the negative electron affinity mechanism of emission |
US6822380B2 (en) | 2001-10-12 | 2004-11-23 | Hewlett-Packard Development Company, L.P. | Field-enhanced MIS/MIM electron emitters |
US6577058B2 (en) | 2001-10-12 | 2003-06-10 | Hewlett-Packard Development Company, L.P. | Injection cold emitter with negative electron affinity based on wide-gap semiconductor structure with controlling base |
JP3647436B2 (ja) | 2001-12-25 | 2005-05-11 | キヤノン株式会社 | 電子放出素子、電子源、画像表示装置、及び電子放出素子の製造方法 |
US7327829B2 (en) * | 2004-04-20 | 2008-02-05 | Varian Medical Systems Technologies, Inc. | Cathode assembly |
TWI324024B (en) * | 2005-01-14 | 2010-04-21 | Hon Hai Prec Ind Co Ltd | Field emission type light source |
GB0620259D0 (en) * | 2006-10-12 | 2006-11-22 | Astex Therapeutics Ltd | Pharmaceutical compounds |
JP5450022B2 (ja) * | 2009-12-11 | 2014-03-26 | 株式会社デンソー | 熱電子発電素子 |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3921022A (en) * | 1974-09-03 | 1975-11-18 | Rca Corp | Field emitting device and method of making same |
DE3855482T2 (de) * | 1987-02-06 | 1997-03-20 | Canon Kk | Elektronen emittierendes Element und dessen Herstellungsverfahren |
GB8818445D0 (en) * | 1988-08-03 | 1988-09-07 | Jones B L | Stm probe |
NL8802409A (nl) * | 1988-09-30 | 1990-04-17 | Philips Nv | Weergeefinrichting, steunplaat voorzien van diode en geschikt voor de weergeefinrichting en werkwijze ter vervaardiging van de steunplaat. |
JP3085407B2 (ja) * | 1991-03-08 | 2000-09-11 | キヤノン株式会社 | 半導体電子放出素子 |
US5129850A (en) * | 1991-08-20 | 1992-07-14 | Motorola, Inc. | Method of making a molded field emission electron emitter employing a diamond coating |
US5141460A (en) * | 1991-08-20 | 1992-08-25 | Jaskie James E | Method of making a field emission electron source employing a diamond coating |
US5536193A (en) * | 1991-11-07 | 1996-07-16 | Microelectronics And Computer Technology Corporation | Method of making wide band gap field emitter |
US5686791A (en) * | 1992-03-16 | 1997-11-11 | Microelectronics And Computer Technology Corp. | Amorphic diamond film flat field emission cathode |
US5449970A (en) * | 1992-03-16 | 1995-09-12 | Microelectronics And Computer Technology Corporation | Diode structure flat panel display |
US5619092A (en) * | 1993-02-01 | 1997-04-08 | Motorola | Enhanced electron emitter |
-
1993
- 1993-02-01 US US08/011,595 patent/US5619092A/en not_active Expired - Fee Related
- 1993-11-10 TW TW082109441A patent/TW232076B/zh active
- 1993-12-16 DE DE69320617T patent/DE69320617T2/de not_active Expired - Fee Related
- 1993-12-16 EP EP93120277A patent/EP0609532B1/en not_active Expired - Lifetime
-
1994
- 1994-01-25 JP JP2305194A patent/JP3171290B2/ja not_active Expired - Fee Related
- 1994-01-25 CN CN94101129A patent/CN1059050C/zh not_active Expired - Fee Related
- 1994-04-08 RU RU94011577A patent/RU94011577A/ru unknown
-
1996
- 1996-03-19 US US08/618,484 patent/US5753997A/en not_active Expired - Fee Related
- 1996-10-29 US US08/740,457 patent/US5757114A/en not_active Expired - Fee Related
-
1997
- 1997-08-25 US US08/917,123 patent/US5945778A/en not_active Expired - Fee Related
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2005006378A1 (fr) * | 2003-07-11 | 2005-01-20 | Tetranova Ltd. | Cathodes a froid en materiaux a base de carbone |
EA008282B1 (ru) * | 2003-07-11 | 2007-04-27 | Тетранова Лтд. | Холодные катоды из углеродных материалов |
Also Published As
Publication number | Publication date |
---|---|
JP3171290B2 (ja) | 2001-05-28 |
TW232076B (ru) | 1994-10-11 |
DE69320617T2 (de) | 1999-03-11 |
US5753997A (en) | 1998-05-19 |
EP0609532A1 (en) | 1994-08-10 |
US5757114A (en) | 1998-05-26 |
EP0609532B1 (en) | 1998-08-26 |
CN1092904A (zh) | 1994-09-28 |
US5619092A (en) | 1997-04-08 |
US5945778A (en) | 1999-08-31 |
JPH06318428A (ja) | 1994-11-15 |
DE69320617D1 (de) | 1998-10-01 |
CN1059050C (zh) | 2000-11-29 |
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