RU94011577A - Электронный электер и устройство с автоэлектронной эмиссией - Google Patents

Электронный электер и устройство с автоэлектронной эмиссией

Info

Publication number
RU94011577A
RU94011577A RU94011577A RU94011577A RU94011577A RU 94011577 A RU94011577 A RU 94011577A RU 94011577 A RU94011577 A RU 94011577A RU 94011577 A RU94011577 A RU 94011577A RU 94011577 A RU94011577 A RU 94011577A
Authority
RU
Russia
Prior art keywords
electronic
elector
auto
emission
electrically active
Prior art date
Application number
RU94011577A
Other languages
English (en)
Inventor
И. Джаски Джеймс
Original Assignee
Моторола, Инк.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Моторола, Инк. filed Critical Моторола, Инк.
Publication of RU94011577A publication Critical patent/RU94011577A/ru

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J1/00Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
    • H01J1/02Main electrodes
    • H01J1/30Cold cathodes, e.g. field-emissive cathode
    • H01J1/304Field-emissive cathodes
    • H01J1/3042Field-emissive cathodes microengineered, e.g. Spindt-type
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2201/00Electrodes common to discharge tubes
    • H01J2201/30Cold cathodes
    • H01J2201/304Field emission cathodes
    • H01J2201/30446Field emission cathodes characterised by the emitter material
    • H01J2201/30453Carbon types
    • H01J2201/30457Diamond

Landscapes

  • Cold Cathode And The Manufacture (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Claims (1)

  1. Электронный эмиттер образован слоем алмазоподобного углерода, имеющего структуру алмазной связи, с электрически активным дефектом в точке эмиссии. Электрически активный дефект действует подобно очень тонкому электронному эмиттеру с очень низкой работой выхода и улучшенными токовыми характеристиками, включающими улучшенный ток насыщения.
RU94011577A 1993-02-01 1994-04-08 Электронный электер и устройство с автоэлектронной эмиссией RU94011577A (ru)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US08/011,595 US5619092A (en) 1993-02-01 1993-02-01 Enhanced electron emitter
US08/011,595 1993-02-01

Publications (1)

Publication Number Publication Date
RU94011577A true RU94011577A (ru) 1995-12-10

Family

ID=21751109

Family Applications (1)

Application Number Title Priority Date Filing Date
RU94011577A RU94011577A (ru) 1993-02-01 1994-04-08 Электронный электер и устройство с автоэлектронной эмиссией

Country Status (7)

Country Link
US (4) US5619092A (ru)
EP (1) EP0609532B1 (ru)
JP (1) JP3171290B2 (ru)
CN (1) CN1059050C (ru)
DE (1) DE69320617T2 (ru)
RU (1) RU94011577A (ru)
TW (1) TW232076B (ru)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2005006378A1 (fr) * 2003-07-11 2005-01-20 Tetranova Ltd. Cathodes a froid en materiaux a base de carbone

Families Citing this family (41)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5619092A (en) * 1993-02-01 1997-04-08 Motorola Enhanced electron emitter
AU5897594A (en) * 1993-06-02 1994-12-20 Microelectronics And Computer Technology Corporation Amorphic diamond film flat field emission cathode
CN1134754A (zh) * 1993-11-04 1996-10-30 微电子及计算机技术公司 制作平板显示***和元件的方法
US5602439A (en) * 1994-02-14 1997-02-11 The Regents Of The University Of California, Office Of Technology Transfer Diamond-graphite field emitters
US5578901A (en) * 1994-02-14 1996-11-26 E. I. Du Pont De Nemours And Company Diamond fiber field emitters
US6246168B1 (en) 1994-08-29 2001-06-12 Canon Kabushiki Kaisha Electron-emitting device, electron source and image-forming apparatus as well as method of manufacturing the same
AU728397B2 (en) * 1994-08-29 2001-01-11 Canon Kabushiki Kaisha Electron-emitting device, electron source and image-forming apparatus as well as method of manufacturing the same
US5439753A (en) 1994-10-03 1995-08-08 Motorola, Inc. Electron emissive film
US5623180A (en) * 1994-10-31 1997-04-22 Lucent Technologies Inc. Electron field emitters comprising particles cooled with low voltage emitting material
US5637950A (en) * 1994-10-31 1997-06-10 Lucent Technologies Inc. Field emission devices employing enhanced diamond field emitters
WO1997006549A1 (en) * 1995-08-04 1997-02-20 Printable Field Emmitters Limited Field electron emission materials and devices
WO1997007522A1 (en) * 1995-08-14 1997-02-27 Sandia Corporation Method for creation of controlled field emission sites
US5982095A (en) * 1995-09-19 1999-11-09 Lucent Technologies Inc. Plasma displays having electrodes of low-electron affinity materials
JP3580930B2 (ja) * 1996-01-18 2004-10-27 住友電気工業株式会社 電子放出装置
US6008502A (en) * 1996-03-27 1999-12-28 Matsushita Electric Industrial Co., Ltd. Diamond electron emitting device having an insulative electron supply layer
JP3745844B2 (ja) * 1996-10-14 2006-02-15 浜松ホトニクス株式会社 電子管
US5973452A (en) * 1996-11-01 1999-10-26 Si Diamond Technology, Inc. Display
US6020677A (en) * 1996-11-13 2000-02-01 E. I. Du Pont De Nemours And Company Carbon cone and carbon whisker field emitters
US6445114B1 (en) 1997-04-09 2002-09-03 Matsushita Electric Industrial Co., Ltd. Electron emitting device and method of manufacturing the same
US5869922A (en) * 1997-08-13 1999-02-09 Si Diamond Technology, Inc. Carbon film for field emission devices
DE19757141A1 (de) * 1997-12-20 1999-06-24 Philips Patentverwaltung Array aus Diamant/wasserstoffhaltigen Elektroden
EP1056110B1 (en) 1998-02-09 2009-12-16 Panasonic Corporation Electron emitting device, method of producing the same, and method of driving the same; and image display comprising the electron emitting device and method of producing the same
FR2780808B1 (fr) * 1998-07-03 2001-08-10 Thomson Csf Dispositif a emission de champ et procedes de fabrication
US6181055B1 (en) 1998-10-12 2001-01-30 Extreme Devices, Inc. Multilayer carbon-based field emission electron device for high current density applications
US6441550B1 (en) 1998-10-12 2002-08-27 Extreme Devices Inc. Carbon-based field emission electron device for high current density applications
KR100311209B1 (ko) * 1998-10-29 2001-12-17 박종섭 전계방출표시소자의제조방법
DE19910156C2 (de) * 1999-02-26 2002-07-18 Hahn Meitner Inst Berlin Gmbh Elektronenemitter und Verfahren zu dessen Herstellung
US6059627A (en) * 1999-03-08 2000-05-09 Motorola, Inc. Method of providing uniform emission current
RU2155412C1 (ru) * 1999-07-13 2000-08-27 Закрытое акционерное общество "Патинор Коутингс Лимитед" Плоский люминесцентный экран, способ изготовления плоского люминесцентного экрана и способ получения изображения на плоском люминесцентном экране
FR2803944B1 (fr) * 2000-01-14 2002-06-14 Thomson Tubes Electroniques Cathode generatrice d'electrons et son procede de fabrication
DE10036889C1 (de) * 2000-07-28 2002-04-18 Infineon Technologies Ag Verfahren und Einrichtung zur Bestimmung eines in einem differentiellen Sendesignalabschnitt eines Funkgerätes auftretenden Offsetwerts
US6686696B2 (en) * 2001-03-08 2004-02-03 Genvac Aerospace Corporation Magnetron with diamond coated cathode
US6554673B2 (en) 2001-07-31 2003-04-29 The United States Of America As Represented By The Secretary Of The Navy Method of making electron emitters
US6847045B2 (en) 2001-10-12 2005-01-25 Hewlett-Packard Development Company, L.P. High-current avalanche-tunneling and injection-tunneling semiconductor-dielectric-metal stable cold emitter, which emulates the negative electron affinity mechanism of emission
US6822380B2 (en) 2001-10-12 2004-11-23 Hewlett-Packard Development Company, L.P. Field-enhanced MIS/MIM electron emitters
US6577058B2 (en) 2001-10-12 2003-06-10 Hewlett-Packard Development Company, L.P. Injection cold emitter with negative electron affinity based on wide-gap semiconductor structure with controlling base
JP3647436B2 (ja) 2001-12-25 2005-05-11 キヤノン株式会社 電子放出素子、電子源、画像表示装置、及び電子放出素子の製造方法
US7327829B2 (en) * 2004-04-20 2008-02-05 Varian Medical Systems Technologies, Inc. Cathode assembly
TWI324024B (en) * 2005-01-14 2010-04-21 Hon Hai Prec Ind Co Ltd Field emission type light source
GB0620259D0 (en) * 2006-10-12 2006-11-22 Astex Therapeutics Ltd Pharmaceutical compounds
JP5450022B2 (ja) * 2009-12-11 2014-03-26 株式会社デンソー 熱電子発電素子

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3921022A (en) * 1974-09-03 1975-11-18 Rca Corp Field emitting device and method of making same
DE3855482T2 (de) * 1987-02-06 1997-03-20 Canon Kk Elektronen emittierendes Element und dessen Herstellungsverfahren
GB8818445D0 (en) * 1988-08-03 1988-09-07 Jones B L Stm probe
NL8802409A (nl) * 1988-09-30 1990-04-17 Philips Nv Weergeefinrichting, steunplaat voorzien van diode en geschikt voor de weergeefinrichting en werkwijze ter vervaardiging van de steunplaat.
JP3085407B2 (ja) * 1991-03-08 2000-09-11 キヤノン株式会社 半導体電子放出素子
US5129850A (en) * 1991-08-20 1992-07-14 Motorola, Inc. Method of making a molded field emission electron emitter employing a diamond coating
US5141460A (en) * 1991-08-20 1992-08-25 Jaskie James E Method of making a field emission electron source employing a diamond coating
US5536193A (en) * 1991-11-07 1996-07-16 Microelectronics And Computer Technology Corporation Method of making wide band gap field emitter
US5686791A (en) * 1992-03-16 1997-11-11 Microelectronics And Computer Technology Corp. Amorphic diamond film flat field emission cathode
US5449970A (en) * 1992-03-16 1995-09-12 Microelectronics And Computer Technology Corporation Diode structure flat panel display
US5619092A (en) * 1993-02-01 1997-04-08 Motorola Enhanced electron emitter

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2005006378A1 (fr) * 2003-07-11 2005-01-20 Tetranova Ltd. Cathodes a froid en materiaux a base de carbone
EA008282B1 (ru) * 2003-07-11 2007-04-27 Тетранова Лтд. Холодные катоды из углеродных материалов

Also Published As

Publication number Publication date
JP3171290B2 (ja) 2001-05-28
TW232076B (ru) 1994-10-11
DE69320617T2 (de) 1999-03-11
US5753997A (en) 1998-05-19
EP0609532A1 (en) 1994-08-10
US5757114A (en) 1998-05-26
EP0609532B1 (en) 1998-08-26
CN1092904A (zh) 1994-09-28
US5619092A (en) 1997-04-08
US5945778A (en) 1999-08-31
JPH06318428A (ja) 1994-11-15
DE69320617D1 (de) 1998-10-01
CN1059050C (zh) 2000-11-29

Similar Documents

Publication Publication Date Title
RU94011577A (ru) Электронный электер и устройство с автоэлектронной эмиссией
DE69216710D1 (de) Diamantüberzogene Feldemissions-Elektronenquelle und Herstellungsverfahren dazu
ES2108044T3 (es) Dispositivo de emision por campo de catodo frio con autorregulacion de emisor integral.
SG67550A1 (en) Field emission electron source method of producing the same and use of the same
DE69724129D1 (de) Lichtemittierende organische vorrichtungen mit verbesserter kathode
ATE123175T1 (de) Lateraler heterogrenzflächen-bipolartransistor.
EP1065737A3 (en) Organic electroluminescent device
KR910005042A (ko) 반도체발광소자의 발광출력 측정장치
MY107443A (en) Semiconductor device with buried electrode.
EP0259878A3 (en) Electron emission element
JPS60172239U (ja) キ−トツプ
JPS5645073A (en) Reverse conduction thyrister
JPS62178626U (ru)
JPS60141065U (ja) 閃光発光器の発光管
EP0129385A3 (en) Improvements in bipolar transistors
JPS607695U (ja) 直流モ−タのソフトスタ−ト回路
JPS5984722U (ja) 碍子装置
KR870005345A (ko) 비데오의 영상헤드와 음성헤드 자계 소거회로
JPS60121811U (ja) 発光する耳飾り
JPH01117538U (ru)
JPS60126503U (ja) 人造芝生
JPS6195111U (ru)
JPS5836363U (ja) フロ−センサ
JPS59145054U (ja) 半導体レ−ザ
RU2000100080A (ru) Биполярный транзистор со статической индукцией