RU2013139039A - Сенсор ионизирующего излучения - Google Patents
Сенсор ионизирующего излучения Download PDFInfo
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- 230000005865 ionizing radiation Effects 0.000 title claims abstract 3
- 239000000758 substrate Substances 0.000 claims abstract 18
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract 5
- 229910052710 silicon Inorganic materials 0.000 claims abstract 5
- 239000010703 silicon Substances 0.000 claims abstract 5
- 238000000637 aluminium metallisation Methods 0.000 claims abstract 4
- 229910052751 metal Inorganic materials 0.000 claims abstract 4
- 239000002184 metal Substances 0.000 claims abstract 4
- 229910052782 aluminium Inorganic materials 0.000 claims abstract 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract 2
- 239000011248 coating agent Substances 0.000 claims abstract 2
- 238000000576 coating method Methods 0.000 claims abstract 2
- 238000009792 diffusion process Methods 0.000 claims abstract 2
- 230000000873 masking effect Effects 0.000 claims abstract 2
- 238000000206 photolithography Methods 0.000 claims abstract 2
- 229910004298 SiO 2 Inorganic materials 0.000 claims 2
- 230000015572 biosynthetic process Effects 0.000 claims 1
- 230000015556 catabolic process Effects 0.000 claims 1
- 238000005259 measurement Methods 0.000 claims 1
- RJCRUVXAWQRZKQ-UHFFFAOYSA-N oxosilicon;silicon Chemical compound [Si].[Si]=O RJCRUVXAWQRZKQ-UHFFFAOYSA-N 0.000 claims 1
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
- G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
- G01T1/16—Measuring radiation intensity
- G01T1/24—Measuring radiation intensity with semiconductor detectors
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- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
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- H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
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- H01L31/028—Inorganic materials including, apart from doping material or other impurities, only elements of Group IV of the Periodic Table
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Abstract
1. Сенсор ионизирующего излучения, представляющий собой p-i-n структуру, содержащую высокоомную подложку кремния n-типа проводимости, на лицевой (рабочей) стороне которой расположены р-области, а также маскирующее покрытие SiO; алюминиевая металлизация; пассивирующий слой; на оборотной стороне подложки расположены высоколегированный слой n-области и алюминиевая металлизация;при этом, по крайней мере, одна р-область расположена в центральной части подложки и занимает большую часть площади поверхности, образуя чувствительную область сенсора, и, по крайней мере, две р-области, выполненные в виде кольцеобразных элементов, концентрично расположены в нечувствительной области по периферии подложки с возможностью снижения величины поверхностного тока и обеспечения плавного падения потенциала от чувствительной области к периферии подложки, в слое SiOсформированы окна для обеспечения контакта металла с р-областью; в пассивирующем слое сформированы окна для присоединения выводов.2. Сенсор по п.1, характеризующийся тем, что конструктивные элементы выполнены по планарной технологии с использованием контактной фотолитографии.3. Сенсор по п.1, характеризующийся тем, что суммарная площадь окон для обеспечения контакта металла с р-областью не превышает 1% площади поверхности чувствительной области для предотвращения диффузии алюминия в кремний.4. Сенсор по п.1, характеризующийся тем, что количество окон для присоединения выводов выполнено равным 4, при этом окна расположены по краям подложки - по одному с каждой стороны.5. Сенсор по п.1, характеризующийся тем, что окна для присоединения выводов расположены в нечувствительной о�
Claims (11)
1. Сенсор ионизирующего излучения, представляющий собой p-i-n структуру, содержащую высокоомную подложку кремния n-типа проводимости, на лицевой (рабочей) стороне которой расположены р-области, а также маскирующее покрытие SiO2; алюминиевая металлизация; пассивирующий слой; на оборотной стороне подложки расположены высоколегированный слой n-области и алюминиевая металлизация;
при этом, по крайней мере, одна р-область расположена в центральной части подложки и занимает большую часть площади поверхности, образуя чувствительную область сенсора, и, по крайней мере, две р-области, выполненные в виде кольцеобразных элементов, концентрично расположены в нечувствительной области по периферии подложки с возможностью снижения величины поверхностного тока и обеспечения плавного падения потенциала от чувствительной области к периферии подложки, в слое SiO2 сформированы окна для обеспечения контакта металла с р-областью; в пассивирующем слое сформированы окна для присоединения выводов.
2. Сенсор по п.1, характеризующийся тем, что конструктивные элементы выполнены по планарной технологии с использованием контактной фотолитографии.
3. Сенсор по п.1, характеризующийся тем, что суммарная площадь окон для обеспечения контакта металла с р-областью не превышает 1% площади поверхности чувствительной области для предотвращения диффузии алюминия в кремний.
4. Сенсор по п.1, характеризующийся тем, что количество окон для присоединения выводов выполнено равным 4, при этом окна расположены по краям подложки - по одному с каждой стороны.
5. Сенсор по п.1, характеризующийся тем, что окна для присоединения выводов расположены в нечувствительной области подложки.
6. Сенсор по п.1, характеризующийся тем, что р-область, расположенная в центральной части подложки, имеет профилированные участки по краям в виде выемок, обеспечивающих формирование неактивных зон для размещения окон для присоединения выводов.
7. Сенсор по п.1, характеризующийся тем, что в качестве подложки кремния используют пластину из высокочистого БЗП кремния с удельным сопротивлением 3÷12 кОм·см, толщиной 250-1000 мкм.
8. Сенсор по п.1, характеризующийся тем, что количество кольцеобразных элементов (охранных колец) выбрано равным 4, расположенных на расстоянии друг от друга, увеличивающемся от центра подложки к периферии.
9. Сенсор по п.8, характеризующийся тем, что ширина кольцеобразных элементов выбрана равной 25 мкм, при этом расстояние между первым и вторым элементом выбрано равным 40 мкм, между вторым и третьим - 50 мкм, между третьим и четвертым - 70 мкм, при этом первый элемент отстоит от границы чувствительной р-области на расстоянии 40 мкм, при этом указанные значения величин имеют допустимое отклонение до 20%.
10. Сенсор по п.1, характеризующийся тем, что подложка выбрана с габаритными размерами рабочей поверхности до 102×102 мм2, при этом габаритные размеры поверхности активной области составляют до 100×100 мм2, толщина сенсора составляет 250-1000 мкм (определяется толщиной пластины); область, занимаемая кольцеобразными элементами, составляет не более - 1 мм по периметру подложки.
11. Сенсор по п.1, характеризующийся тем, что он обеспечивает достижение следующих электрических характеристик: величину обратного смещения от 40÷200 В до достижения режима полного обеднения, в зависимости от удельного сопротивления и толщины сенсора; рабочий режим, характеризующийся обратным смещением при полном обеднении; рабочее напряжение, определяемое из значения напряжения полного обеднения (VПО) - Vраб=VПО+20 В; напряжение пробоя, не менее - 2·VПО; темновой ток при рабочем напряжении, не более - 200 нА/см2; при этом измерения перечисленных параметров осуществляют при температуре 20±2°С.
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
RU2013139039/28A RU2545502C2 (ru) | 2013-08-22 | 2013-08-22 | Сенсор ионизирующего излучения |
US14/913,445 US9547089B2 (en) | 2013-08-22 | 2014-07-18 | Ionizing radiation sensor |
PCT/RU2014/000527 WO2015026262A1 (en) | 2013-08-22 | 2014-07-18 | Ionizing radiation sensor |
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RU2013139039/28A RU2545502C2 (ru) | 2013-08-22 | 2013-08-22 | Сенсор ионизирующего излучения |
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RU2013139039A true RU2013139039A (ru) | 2015-02-27 |
RU2545502C2 RU2545502C2 (ru) | 2015-04-10 |
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RU168184U1 (ru) * | 2016-04-22 | 2017-01-23 | Федеральное государственное бюджетное образовательное учреждение высшего образования "Сибирский государственный аэрокосмический университет имени академика М.Ф. Решетнева" (СибГАУ) | Планарный преобразователь ионизирующих излучений с накопительным конденсатором |
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RU2599274C1 (ru) * | 2015-05-14 | 2016-10-10 | Федеральное государственное автономное образовательное учреждение высшего образования "Национальный исследовательский технологический университет "МИСиС" | Планарный преобразователь ионизирующих излучений и способ его изготовления |
CN106486502A (zh) * | 2015-08-27 | 2017-03-08 | 中国科学院微电子研究所 | 一种x射线传感器及其制造方法 |
RU2634324C1 (ru) * | 2016-05-18 | 2017-10-25 | Публичное акционерное общество "Интерсофт Евразия", ПАО "Интерсофт Евразия" | Сенсор ионизирующего излучения на основе кремния бестигельной зонной плавки р-типа проводимости |
US10813607B2 (en) * | 2018-06-27 | 2020-10-27 | Prismatic Sensors Ab | X-ray sensor, method for constructing an x-ray sensor and an x-ray imaging system comprising such an x-ray sensor |
RU2694331C1 (ru) * | 2018-10-26 | 2019-07-11 | Акционерное общество "Научно-исследовательский институт технической физики и автоматизации" (АО "НИИТФА") | Способ двухэнергетической томографии в коническом пучке и схема устройства двухэнергетического детектора |
RU2702316C1 (ru) * | 2018-10-26 | 2019-10-07 | Акционерное общество "Научно-исследовательский институт технической физики и автоматизации" (АО "НИИТФА") | Способ верификации укладки пациента при дистанционной лучевой терапии и схема устройства двухэнергетического детектора |
CN110137280B (zh) * | 2019-05-30 | 2020-12-01 | 京东方科技集团股份有限公司 | 阵列基板及其制造方法、显示面板和显示装置 |
RU193082U1 (ru) * | 2019-06-27 | 2019-10-14 | Федеральное государственное бюджетное учреждение науки Физико-технический институт им. А.Ф. Иоффе Российской академии наук | Планарный полупроводниковый детектор ионизирующего излучения |
US12015036B2 (en) * | 2020-04-28 | 2024-06-18 | Lawrence Livermore National Security, Llc | High temporal resolution solid-state X-ray detection system |
RU207343U1 (ru) * | 2021-07-05 | 2021-10-25 | OOO «СофтЭксперт» | P-I-N-диодный дозиметр |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
RU2248012C2 (ru) * | 2002-06-21 | 2005-03-10 | Институт физико-технических проблем | Устройство для регистрации рентгеновского и низкоэнергетического гамма-излучения |
WO2007077286A1 (en) * | 2006-01-05 | 2007-07-12 | Artto Aurola | Semiconductor radiation detector detecting visible light |
CN101401208A (zh) * | 2006-03-15 | 2009-04-01 | 皇家飞利浦电子股份有限公司 | 用于辐射检测的半导体器件 |
JP5381420B2 (ja) * | 2008-07-22 | 2014-01-08 | 富士電機株式会社 | 半導体装置 |
RU87569U1 (ru) * | 2009-06-25 | 2009-10-10 | Федеральное государственное унитарное предприятие "НПО "ОРИОН" | Германиевый планарный фотодиод |
ES2366291B1 (es) * | 2010-02-12 | 2012-08-30 | Consejo Superior De Investigaciones Científicas (Csic) | Detector de radiación ionizante sensible a la posicion 2d. |
CN103748689B (zh) * | 2011-09-08 | 2017-02-15 | 富士电机株式会社 | 半导体装置以及半导体装置的制造方法 |
WO2014199465A1 (ja) * | 2013-06-12 | 2014-12-18 | 三菱電機株式会社 | 半導体装置 |
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Cited By (1)
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RU168184U1 (ru) * | 2016-04-22 | 2017-01-23 | Федеральное государственное бюджетное образовательное учреждение высшего образования "Сибирский государственный аэрокосмический университет имени академика М.Ф. Решетнева" (СибГАУ) | Планарный преобразователь ионизирующих излучений с накопительным конденсатором |
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US20160209518A1 (en) | 2016-07-21 |
WO2015026262A1 (en) | 2015-02-26 |
US9547089B2 (en) | 2017-01-17 |
RU2545502C2 (ru) | 2015-04-10 |
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