RU2013139039A - Сенсор ионизирующего излучения - Google Patents

Сенсор ионизирующего излучения Download PDF

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RU2013139039A
RU2013139039A RU2013139039/28A RU2013139039A RU2013139039A RU 2013139039 A RU2013139039 A RU 2013139039A RU 2013139039/28 A RU2013139039/28 A RU 2013139039/28A RU 2013139039 A RU2013139039 A RU 2013139039A RU 2013139039 A RU2013139039 A RU 2013139039A
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Владимир Александрович Елин
Михаил Моисеевич Меркин
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Открытое акционерное общество "Интерсофт Евразия"
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Priority to US14/913,445 priority patent/US9547089B2/en
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    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
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Abstract

1. Сенсор ионизирующего излучения, представляющий собой p-i-n структуру, содержащую высокоомную подложку кремния n-типа проводимости, на лицевой (рабочей) стороне которой расположены р-области, а также маскирующее покрытие SiO; алюминиевая металлизация; пассивирующий слой; на оборотной стороне подложки расположены высоколегированный слой n-области и алюминиевая металлизация;при этом, по крайней мере, одна р-область расположена в центральной части подложки и занимает большую часть площади поверхности, образуя чувствительную область сенсора, и, по крайней мере, две р-области, выполненные в виде кольцеобразных элементов, концентрично расположены в нечувствительной области по периферии подложки с возможностью снижения величины поверхностного тока и обеспечения плавного падения потенциала от чувствительной области к периферии подложки, в слое SiOсформированы окна для обеспечения контакта металла с р-областью; в пассивирующем слое сформированы окна для присоединения выводов.2. Сенсор по п.1, характеризующийся тем, что конструктивные элементы выполнены по планарной технологии с использованием контактной фотолитографии.3. Сенсор по п.1, характеризующийся тем, что суммарная площадь окон для обеспечения контакта металла с р-областью не превышает 1% площади поверхности чувствительной области для предотвращения диффузии алюминия в кремний.4. Сенсор по п.1, характеризующийся тем, что количество окон для присоединения выводов выполнено равным 4, при этом окна расположены по краям подложки - по одному с каждой стороны.5. Сенсор по п.1, характеризующийся тем, что окна для присоединения выводов расположены в нечувствительной о�

Claims (11)

1. Сенсор ионизирующего излучения, представляющий собой p-i-n структуру, содержащую высокоомную подложку кремния n-типа проводимости, на лицевой (рабочей) стороне которой расположены р-области, а также маскирующее покрытие SiO2; алюминиевая металлизация; пассивирующий слой; на оборотной стороне подложки расположены высоколегированный слой n-области и алюминиевая металлизация;
при этом, по крайней мере, одна р-область расположена в центральной части подложки и занимает большую часть площади поверхности, образуя чувствительную область сенсора, и, по крайней мере, две р-области, выполненные в виде кольцеобразных элементов, концентрично расположены в нечувствительной области по периферии подложки с возможностью снижения величины поверхностного тока и обеспечения плавного падения потенциала от чувствительной области к периферии подложки, в слое SiO2 сформированы окна для обеспечения контакта металла с р-областью; в пассивирующем слое сформированы окна для присоединения выводов.
2. Сенсор по п.1, характеризующийся тем, что конструктивные элементы выполнены по планарной технологии с использованием контактной фотолитографии.
3. Сенсор по п.1, характеризующийся тем, что суммарная площадь окон для обеспечения контакта металла с р-областью не превышает 1% площади поверхности чувствительной области для предотвращения диффузии алюминия в кремний.
4. Сенсор по п.1, характеризующийся тем, что количество окон для присоединения выводов выполнено равным 4, при этом окна расположены по краям подложки - по одному с каждой стороны.
5. Сенсор по п.1, характеризующийся тем, что окна для присоединения выводов расположены в нечувствительной области подложки.
6. Сенсор по п.1, характеризующийся тем, что р-область, расположенная в центральной части подложки, имеет профилированные участки по краям в виде выемок, обеспечивающих формирование неактивных зон для размещения окон для присоединения выводов.
7. Сенсор по п.1, характеризующийся тем, что в качестве подложки кремния используют пластину из высокочистого БЗП кремния с удельным сопротивлением 3÷12 кОм·см, толщиной 250-1000 мкм.
8. Сенсор по п.1, характеризующийся тем, что количество кольцеобразных элементов (охранных колец) выбрано равным 4, расположенных на расстоянии друг от друга, увеличивающемся от центра подложки к периферии.
9. Сенсор по п.8, характеризующийся тем, что ширина кольцеобразных элементов выбрана равной 25 мкм, при этом расстояние между первым и вторым элементом выбрано равным 40 мкм, между вторым и третьим - 50 мкм, между третьим и четвертым - 70 мкм, при этом первый элемент отстоит от границы чувствительной р-области на расстоянии 40 мкм, при этом указанные значения величин имеют допустимое отклонение до 20%.
10. Сенсор по п.1, характеризующийся тем, что подложка выбрана с габаритными размерами рабочей поверхности до 102×102 мм2, при этом габаритные размеры поверхности активной области составляют до 100×100 мм2, толщина сенсора составляет 250-1000 мкм (определяется толщиной пластины); область, занимаемая кольцеобразными элементами, составляет не более - 1 мм по периметру подложки.
11. Сенсор по п.1, характеризующийся тем, что он обеспечивает достижение следующих электрических характеристик: величину обратного смещения от 40÷200 В до достижения режима полного обеднения, в зависимости от удельного сопротивления и толщины сенсора; рабочий режим, характеризующийся обратным смещением при полном обеднении; рабочее напряжение, определяемое из значения напряжения полного обеднения (VПО) - Vраб=VПО+20 В; напряжение пробоя, не менее - 2·VПО; темновой ток при рабочем напряжении, не более - 200 нА/см2; при этом измерения перечисленных параметров осуществляют при температуре 20±2°С.
RU2013139039/28A 2013-08-22 2013-08-22 Сенсор ионизирующего излучения RU2545502C2 (ru)

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US14/913,445 US9547089B2 (en) 2013-08-22 2014-07-18 Ionizing radiation sensor
PCT/RU2014/000527 WO2015026262A1 (en) 2013-08-22 2014-07-18 Ionizing radiation sensor

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