RU2009112779A - METHOD OF PROCESSING THE SURFACE OF PLATES FOR THE FORMATION OF ACTIVE AREAS - Google Patents
METHOD OF PROCESSING THE SURFACE OF PLATES FOR THE FORMATION OF ACTIVE AREAS Download PDFInfo
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- RU2009112779A RU2009112779A RU2009112779/28A RU2009112779A RU2009112779A RU 2009112779 A RU2009112779 A RU 2009112779A RU 2009112779/28 A RU2009112779/28 A RU 2009112779/28A RU 2009112779 A RU2009112779 A RU 2009112779A RU 2009112779 A RU2009112779 A RU 2009112779A
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Abstract
Метод обработки поверхности пластин для формирования активных областей, отличающийся тем, что кремниевые пластины подвергают двухстадийной обработке в двух ваннах с различными растворами: в первой ванне содержится раствор, состоящий из серной кислоты и перекиси водорода (H2SO4:Н2О2) в соотношении компонентов 9:1 при температуре Т=105±5°С; во второй ванне содержится раствор, состоящий из водного аммиака, перекиси водорода и деионизованной воды (NH4OH:H2O2:Н2О) в соотношении компонентов 1:5:15 при температуре Т=55°С, длительность обработки в каждой из ванн по 5 мин, при этом количество пылинок составило 3 шт. The method of processing the surface of the wafers to form active regions, characterized in that the silicon wafers are subjected to two-stage treatment in two baths with different solutions: the first bath contains a solution consisting of sulfuric acid and hydrogen peroxide (H2SO4: Н2О2) in a ratio of 9: 1 with temperature T = 105 ± 5 ° C; the second bath contains a solution consisting of aqueous ammonia, hydrogen peroxide and deionized water (NH4OH: H2O2: Н2О) in a ratio of components 1: 5: 15 at a temperature of T = 55 ° C, the duration of treatment in each bath is 5 minutes, at this amount of dust was 3 pcs.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| RU2009112779/28A RU2009112779A (en) | 2009-04-06 | 2009-04-06 | METHOD OF PROCESSING THE SURFACE OF PLATES FOR THE FORMATION OF ACTIVE AREAS |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| RU2009112779/28A RU2009112779A (en) | 2009-04-06 | 2009-04-06 | METHOD OF PROCESSING THE SURFACE OF PLATES FOR THE FORMATION OF ACTIVE AREAS |
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| Publication Number | Publication Date |
|---|---|
| RU2009112779A true RU2009112779A (en) | 2010-10-20 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| RU2009112779/28A RU2009112779A (en) | 2009-04-06 | 2009-04-06 | METHOD OF PROCESSING THE SURFACE OF PLATES FOR THE FORMATION OF ACTIVE AREAS |
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| Country | Link |
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| RU (1) | RU2009112779A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| RU2565380C2 (en) * | 2014-01-31 | 2015-10-20 | Федеральное Государственное Бюджетное Образовательное Учреждение Высшего Профессионального Образования "Дагестанский Государственный Технический Университет" (Дгту) | Method for surface treatment of epitaxial silicon wafers to form active regions |
-
2009
- 2009-04-06 RU RU2009112779/28A patent/RU2009112779A/en not_active Application Discontinuation
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| RU2565380C2 (en) * | 2014-01-31 | 2015-10-20 | Федеральное Государственное Бюджетное Образовательное Учреждение Высшего Профессионального Образования "Дагестанский Государственный Технический Университет" (Дгту) | Method for surface treatment of epitaxial silicon wafers to form active regions |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| FA94 | Acknowledgement of application withdrawn (non-payment of fees) |
Effective date: 20110722 |