PL2915902T3 - Źródło plazmy dla plazmowego urządzenia CVD i sposób wytwarzania przedmiotu przy użyciu źródła plazmy - Google Patents

Źródło plazmy dla plazmowego urządzenia CVD i sposób wytwarzania przedmiotu przy użyciu źródła plazmy

Info

Publication number
PL2915902T3
PL2915902T3 PL13850259T PL13850259T PL2915902T3 PL 2915902 T3 PL2915902 T3 PL 2915902T3 PL 13850259 T PL13850259 T PL 13850259T PL 13850259 T PL13850259 T PL 13850259T PL 2915902 T3 PL2915902 T3 PL 2915902T3
Authority
PL
Poland
Prior art keywords
plasma
plasma source
article
manufacturing
cvd apparatus
Prior art date
Application number
PL13850259T
Other languages
English (en)
Inventor
Hirotomo KAWAHARA
Nobutaka Aomine
Kazunobu Maeshige
Yuki Aoshima
Hiroshi HANEKAWA
Original Assignee
AGC Inc.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by AGC Inc. filed Critical AGC Inc.
Publication of PL2915902T3 publication Critical patent/PL2915902T3/pl

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32568—Relative arrangement or disposition of electrodes; moving means
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/401—Oxides containing silicon
    • C23C16/402—Silicon dioxide
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32577—Electrical connecting means
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/332—Coating
    • H01J2237/3321—CVD [Chemical Vapor Deposition]
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H05H1/4645—Radiofrequency discharges
    • H05H1/466—Radiofrequency discharges using capacitive coupling means, e.g. electrodes
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H2242/00—Auxiliary systems
    • H05H2242/20—Power circuits
    • H05H2242/22—DC, AC or pulsed generators

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Electromagnetism (AREA)
  • Inorganic Chemistry (AREA)
  • Plasma Technology (AREA)
  • Chemical Vapour Deposition (AREA)
  • Formation Of Insulating Films (AREA)
PL13850259T 2012-11-02 2013-10-23 Źródło plazmy dla plazmowego urządzenia CVD i sposób wytwarzania przedmiotu przy użyciu źródła plazmy PL2915902T3 (pl)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2012242663 2012-11-02
PCT/JP2013/078735 WO2014069309A1 (ja) 2012-11-02 2013-10-23 プラズマｃｖｄ装置用のプラズマ源およびこのプラズマ源を用いた物品の製造方法
EP13850259.6A EP2915902B1 (en) 2012-11-02 2013-10-23 Plasma source for a plasma cvd apparatus and a manufacturing method of an article using the plasma source

Publications (1)

Publication Number Publication Date
PL2915902T3 true PL2915902T3 (pl) 2020-08-24

Family

ID=50627218

Family Applications (1)

Application Number Title Priority Date Filing Date
PL13850259T PL2915902T3 (pl) 2012-11-02 2013-10-23 Źródło plazmy dla plazmowego urządzenia CVD i sposób wytwarzania przedmiotu przy użyciu źródła plazmy

Country Status (7)

Country Link
US (2) US9922805B2 (pl)
EP (1) EP2915902B1 (pl)
JP (1) JPWO2014069309A1 (pl)
ES (1) ES2781775T3 (pl)
HU (1) HUE049078T2 (pl)
PL (1) PL2915902T3 (pl)
WO (1) WO2014069309A1 (pl)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI641292B (zh) 2008-08-04 2018-11-11 Ａｇｃ北美平面玻璃公司 電漿源
CN107615888B (zh) * 2014-12-05 2022-01-04 北美Agc平板玻璃公司 利用宏粒子减少涂层的等离子体源和将等离子体源用于沉积薄膜涂层和表面改性的方法
MY192286A (en) 2014-12-05 2022-08-17 Agc Glass Europe S A Hollow cathode plasma source
JP2018028109A (ja) * 2014-12-22 2018-02-22 旭硝子株式会社 プラズマｃｖｄ装置
EA201891175A1 (ru) * 2015-11-16 2018-12-28 Эй-Джи-Си Флет Гласс Норт Эмерике, Инк. Плазменный прибор, приводимый в действие многофазным переменным или импульсным электрическим током, и способ получения плазмы
US9721764B2 (en) 2015-11-16 2017-08-01 Agc Flat Glass North America, Inc. Method of producing plasma by multiple-phase alternating or pulsed electrical current
US9721765B2 (en) 2015-11-16 2017-08-01 Agc Flat Glass North America, Inc. Plasma device driven by multiple-phase alternating or pulsed electrical current
US10242846B2 (en) 2015-12-18 2019-03-26 Agc Flat Glass North America, Inc. Hollow cathode ion source
US10573499B2 (en) 2015-12-18 2020-02-25 Agc Flat Glass North America, Inc. Method of extracting and accelerating ions
CN113727483B (zh) * 2021-09-02 2022-12-20 合肥爱普利等离子体有限责任公司 一种多电极交流电弧放电装置、设备及交流电源

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5057185A (en) * 1990-09-27 1991-10-15 Consortium For Surface Processing, Inc. Triode plasma reactor with phase modulated plasma control
JP3586197B2 (ja) * 2000-03-23 2004-11-10 シャープ株式会社 薄膜形成用プラズマ成膜装置
US7411352B2 (en) * 2002-09-19 2008-08-12 Applied Process Technologies, Inc. Dual plasma beam sources and method
JP4875528B2 (ja) * 2007-03-29 2012-02-15 三菱重工業株式会社 薄膜形成装置およびプラズマ発生方法
TWI641292B (zh) 2008-08-04 2018-11-11 Ａｇｃ北美平面玻璃公司 電漿源
GB2466836A (en) * 2009-01-12 2010-07-14 Phive Plasma Technologies Ltd Plasma source tile electrode
EP2256782B1 (en) * 2009-05-25 2018-08-29 Applied Materials, Inc. Plasma deposition source and method for depositing thin films
WO2012000852A1 (de) 2010-06-28 2012-01-05 Emitec Gesellschaft Für Emissionstechnologie Mbh Vorrichtung zur partikelabscheidung im abgasrückführsystem
JP5631088B2 (ja) * 2010-07-15 2014-11-26 国立大学法人東北大学 プラズマ処理装置及びプラズマ処理方法
JP5273759B1 (ja) 2012-02-23 2013-08-28 国立大学法人東北大学 プラズマ処理装置およびプラズマ処理方法

Also Published As

Publication number Publication date
US20150235814A1 (en) 2015-08-20
EP2915902B1 (en) 2020-02-19
JPWO2014069309A1 (ja) 2016-09-08
US10204767B2 (en) 2019-02-12
EP2915902A1 (en) 2015-09-09
EP2915902A4 (en) 2016-08-03
US9922805B2 (en) 2018-03-20
HUE049078T2 (hu) 2020-09-28
WO2014069309A1 (ja) 2014-05-08
ES2781775T3 (es) 2020-09-07
US20180158655A1 (en) 2018-06-07

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