PL2689473T3 - Przetwornik fotoelektryczny o ulepszonej strukturze emitera opartej ma komponentach krzemowych oraz sposób wytwarzania przetwornika fotoelektrycznego - Google Patents
Przetwornik fotoelektryczny o ulepszonej strukturze emitera opartej ma komponentach krzemowych oraz sposób wytwarzania przetwornika fotoelektrycznegoInfo
- Publication number
- PL2689473T3 PL2689473T3 PL12728117T PL12728117T PL2689473T3 PL 2689473 T3 PL2689473 T3 PL 2689473T3 PL 12728117 T PL12728117 T PL 12728117T PL 12728117 T PL12728117 T PL 12728117T PL 2689473 T3 PL2689473 T3 PL 2689473T3
- Authority
- PL
- Poland
- Prior art keywords
- photovoltaic converter
- production
- structure based
- emitter structure
- silicon components
- Prior art date
Links
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title 1
- 238000004519 manufacturing process Methods 0.000 title 1
- 229910052710 silicon Inorganic materials 0.000 title 1
- 239000010703 silicon Substances 0.000 title 1
Classifications
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- H01L31/035236—Superlattices; Multiple quantum well structures
- H01L31/035254—Superlattices; Multiple quantum well structures including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table, e.g. Si-SiGe superlattices
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- B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
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Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
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US201161457428P | 2011-03-25 | 2011-03-25 | |
PCT/IB2012/000867 WO2012131496A2 (en) | 2011-03-25 | 2012-03-22 | Improved emitter structure based on silicone components to be used in a photovoltaic converter and a method for production of the photovoltaic device |
EP12728117.8A EP2689473B1 (en) | 2011-03-25 | 2012-03-22 | Photovoltaic converter with improved emitter structure based on silicon components and a method for production of the photovoltaic converter |
Publications (1)
Publication Number | Publication Date |
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PL2689473T3 true PL2689473T3 (pl) | 2019-10-31 |
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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PL12728117T PL2689473T3 (pl) | 2011-03-25 | 2012-03-22 | Przetwornik fotoelektryczny o ulepszonej strukturze emitera opartej ma komponentach krzemowych oraz sposób wytwarzania przetwornika fotoelektrycznego |
Country Status (6)
Country | Link |
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US (1) | US9520515B2 (pl) |
EP (1) | EP2689473B1 (pl) |
CN (1) | CN103503158B (pl) |
ES (1) | ES2737977T3 (pl) |
PL (1) | PL2689473T3 (pl) |
WO (1) | WO2012131496A2 (pl) |
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CN105431950B (zh) * | 2013-05-14 | 2019-04-30 | 赛腾高新技术公司 | 用于硅光伏电池的分组纳米结构单元***及其制造方法 |
US9722121B2 (en) * | 2013-05-14 | 2017-08-01 | Segton Advanced Technology | Nanostructured units formed inside a silicon material and the manufacturing process to perform them therein |
CN105393364B (zh) * | 2013-07-19 | 2020-01-03 | 赛腾高新技术公司 | 用于适于巨型光转换的光电全硅转换器的发射极的结构***和相关的内置纳米膜及其制备方法 |
EP3161855B9 (de) * | 2014-06-24 | 2018-04-11 | Ev Group E. Thallner GmbH | Verfahren zur oberflächenbehandlung von substraten |
FR3067168A1 (fr) * | 2017-06-01 | 2018-12-07 | Segton Advanced Technology | Procede de fabrication d'un convertisseur lumiere-electricite tout en silicium pour une photoconversion geante |
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US20050252544A1 (en) * | 2004-05-11 | 2005-11-17 | Ajeet Rohatgi | Silicon solar cells and methods of fabrication |
WO2010089624A1 (en) * | 2009-02-06 | 2010-08-12 | Kuznicki Zbigniew T | Methods for producing photovoltaic material and device able to exploit high energy photons |
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Also Published As
Publication number | Publication date |
---|---|
US20130340819A1 (en) | 2013-12-26 |
CN103503158B (zh) | 2017-07-14 |
WO2012131496A2 (en) | 2012-10-04 |
EP2689473B1 (en) | 2019-05-08 |
ES2737977T3 (es) | 2020-01-17 |
EP2689473A2 (en) | 2014-01-29 |
CN103503158A (zh) | 2014-01-08 |
WO2012131496A3 (en) | 2013-07-11 |
US9520515B2 (en) | 2016-12-13 |
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