NO980734D0 - Fremgangsmåte for törking av silisium - Google Patents

Fremgangsmåte for törking av silisium

Info

Publication number: NO980734D0
Authority: NO; Norway
Prior art keywords: substrate; bath; liquid; liquid bath; separating
Prior art date: 1995-08-23

Application number

NO980734A

Other languages

English (en)

Norwegian (no)

Other versions

NO980734L (no

Inventor

Willhelm Schellenberger

Dieter Herrmannsdoerfer

Original Assignee

Ictop Entwicklungs Gmbh

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1995-08-23

Filing date

1998-02-20

Publication date

1998-02-20

1998-02-20 Application filed by Ictop Entwicklungs Gmbh filed Critical Ictop Entwicklungs Gmbh

1998-02-20 Publication of NO980734L publication Critical patent/NO980734L/no

1998-02-20 Publication of NO980734D0 publication Critical patent/NO980734D0/no

Links

Classifications

- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/67034—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for drying
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67057—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing with the semiconductor substrates being dipped in baths or vessels

Landscapes

Engineering & Computer Science (AREA)
Microelectronics & Electronic Packaging (AREA)
Condensed Matter Physics & Semiconductors (AREA)
General Physics & Mathematics (AREA)
Manufacturing & Machinery (AREA)
Computer Hardware Design (AREA)
Physics & Mathematics (AREA)
Power Engineering (AREA)
Cleaning Or Drying Semiconductors (AREA)
Drying Of Solid Materials (AREA)
Silicon Compounds (AREA)
Crystals, And After-Treatments Of Crystals (AREA)
Detergent Compositions (AREA)
Inorganic Insulating Materials (AREA)
Processing And Handling Of Plastics And Other Materials For Molding In General (AREA)

NO980734A 1995-08-23 1998-02-20 Fremgangsmåte for törking av silisium NO980734D0 (no)

Applications Claiming Priority (2)

Application Number	Priority Date	Filing Date	Title
DE19531031A DE19531031C2 (de)	1995-08-23	1995-08-23	Verfahren zum Trocknen von Silizium
PCT/EP1996/003541 WO1997008742A1 (en)	1995-08-23	1996-08-09	Procedure for drying silicon

Publications (2)

Publication Number	Publication Date
NO980734L NO980734L (no)	1998-02-20
NO980734D0 true NO980734D0 (no)	1998-02-20

Family

ID=7770207

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
NO980734A NO980734D0 (no)	1995-08-23	1998-02-20	Fremgangsmåte for törking av silisium

Country Status (24)

Country	Link
EP (2)	EP1199740B1 (ja)
JP (1)	JP3857314B2 (ja)
KR (1)	KR19990037642A (ja)
CN (1)	CN1091542C (ja)
AT (2)	ATE309613T1 (ja)
AU (1)	AU697397B2 (ja)
CA (1)	CA2228168A1 (ja)
CZ (1)	CZ291335B6 (ja)
DE (3)	DE19531031C2 (ja)
DK (2)	DK1199740T3 (ja)
ES (2)	ES2186800T3 (ja)
HK (2)	HK1043661B (ja)
HU (1)	HUP9802482A3 (ja)
IL (1)	IL123042A (ja)
MX (1)	MX9801464A (ja)
NO (1)	NO980734D0 (ja)
PL (1)	PL183355B1 (ja)
PT (1)	PT846334E (ja)
RU (1)	RU2141700C1 (ja)
SI (1)	SI1199740T1 (ja)
SK (1)	SK284835B6 (ja)
TW (1)	TW427952B (ja)
UA (1)	UA51663C2 (ja)
WO (1)	WO1997008742A1 (ja)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
DE19800584C2 (de) *	1998-01-09	2002-06-20	Steag Micro Tech Gmbh	Verfahren und Vorrichtung zum Trocknen von Substraten
DE19613620C2 (de)	1996-04-04	1998-04-16	Steag Micro Tech Gmbh	Verfahren und Vorrichtung zum Trocknen von Substraten
DE19833257C1 (de) *	1998-07-23	1999-09-30	Wacker Siltronic Halbleitermat	Verfahren zur Herstellung einer Halbleiterscheibe
DE19927457C2 (de) *	1999-06-16	2002-06-13	Wacker Siltronic Halbleitermat	Verwendung eines bekannten Verfahrens als Vorbehandlung zur Bestimmung der Diffusionslängen von Minoritätsträgern in einer Halbleiterscheibe
DE10036691A1 (de)	2000-07-27	2002-02-14	Wacker Siltronic Halbleitermat	Verfahren zur chemischen Behandlung von Halbleiterscheiben
DE10064081C2 (de) *	2000-12-21	2002-06-06	Wacker Siltronic Halbleitermat	Verfahren zur Herstellung einer Halbleiterscheibe
DE10360269A1 (de) *	2003-12-17	2005-07-28	Friedrich-Schiller-Universität Jena	Verfahren zur schnellen Mischung von kleinvolumigen Flüssigkeiten und Kit zu dessen Anwendung
WO2006066115A2 (en)	2004-12-17	2006-06-22	The Procter & Gamble Company	Process for extracting liquid from a fabric
KR100897581B1 (ko)	2007-11-14	2009-05-14	주식회사 실트론	웨이퍼 건조 방법
RU2486287C2 (ru) *	2011-04-29	2013-06-27	Антон Викторович Мантузов	Способ очистки поверхности полупроводниковых пластин и регенерации травильных растворов
CN114993028B (zh) *	2022-06-17	2023-05-30	高景太阳能股份有限公司	一种硅片烘干处理方法及***

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
DE2722783A1 (de) *	1977-05-20	1978-11-30	Wacker Chemitronic	Verfahren zum reinigen von silicium
US4169807A (en) *	1978-03-20	1979-10-02	Rca Corporation	Novel solvent drying agent
DE3317286A1 (de) *	1983-05-11	1984-11-22	Heliotronic Forschungs- und Entwicklungsgesellschaft für Solarzellen-Grundstoffe mbH, 8263 Burghausen	Verfahren zur reinigung von silicium durch saeureeinwirkung
FR2591324B1 (fr) *	1985-12-10	1989-02-17	Recif Sa	Appareil pour le sechage unitaire des plaquettes de silicium par centrifugation
JPS62198127A (ja) *	1986-02-25	1987-09-01	Sanyo Electric Co Ltd	半導体ウエハの洗浄方法
US4722752A (en) *	1986-06-16	1988-02-02	Robert F. Orr	Apparatus and method for rinsing and drying silicon wafers
US4902350A (en) *	1987-09-09	1990-02-20	Robert F. Orr	Method for rinsing, cleaning and drying silicon wafers
NL8900480A (nl) *	1989-02-27	1990-09-17	Philips Nv	Werkwijze en inrichting voor het drogen van substraten na behandeling in een vloeistof.
JPH0366126A (ja) *	1989-08-04	1991-03-20	Sharp Corp	絶縁膜の製造方法及びその製造装置
JPH0466175A (ja) *	1990-07-03	1992-03-02	Seiko Epson Corp	水切り乾燥方法
JPH04346431A (ja) *	1991-05-24	1992-12-02	Mitsubishi Electric Corp	半導体シリコンウェハの洗浄装置
CN1071153C (zh) *	1993-09-22	2001-09-19	莱格西***公司	处理流体中半导体晶片的方法和装置

1995
- 1995-08-23 DE DE19531031A patent/DE19531031C2/de not_active Expired - Fee Related
1996
- 1996-08-09 KR KR1019980701119A patent/KR19990037642A/ko active Search and Examination
- 1996-08-09 IL IL12304296A patent/IL123042A/en not_active IP Right Cessation
- 1996-08-09 CZ CZ1998517A patent/CZ291335B6/cs not_active IP Right Cessation
- 1996-08-09 HU HU9802482A patent/HUP9802482A3/hu unknown
- 1996-08-09 ES ES96929234T patent/ES2186800T3/es not_active Expired - Lifetime
- 1996-08-09 WO PCT/EP1996/003541 patent/WO1997008742A1/en active IP Right Grant
- 1996-08-09 DE DE69635427T patent/DE69635427T2/de not_active Expired - Lifetime
- 1996-08-09 CN CN96196222A patent/CN1091542C/zh not_active Expired - Fee Related
- 1996-08-09 AU AU68720/96A patent/AU697397B2/en not_active Ceased
- 1996-08-09 DK DK01130669T patent/DK1199740T3/da active
- 1996-08-09 JP JP50977197A patent/JP3857314B2/ja not_active Expired - Fee Related
- 1996-08-09 SI SI9630728T patent/SI1199740T1/sl unknown
- 1996-08-09 ES ES01130669T patent/ES2250292T3/es not_active Expired - Lifetime
- 1996-08-09 CA CA002228168A patent/CA2228168A1/en not_active Abandoned
- 1996-08-09 AT AT01130669T patent/ATE309613T1/de active
- 1996-08-09 SK SK212-98A patent/SK284835B6/sk unknown
- 1996-08-09 PL PL96325121A patent/PL183355B1/pl not_active IP Right Cessation
- 1996-08-09 EP EP01130669A patent/EP1199740B1/en not_active Expired - Lifetime
- 1996-08-09 DK DK96929234T patent/DK0846334T3/da active
- 1996-08-09 AT AT96929234T patent/ATE227885T1/de active
- 1996-08-09 DE DE69624830T patent/DE69624830T2/de not_active Expired - Lifetime
- 1996-08-09 PT PT96929234T patent/PT846334E/pt unknown
- 1996-08-09 RU RU98104458A patent/RU2141700C1/ru not_active IP Right Cessation
- 1996-08-09 EP EP96929234A patent/EP0846334B1/en not_active Expired - Lifetime
- 1996-08-20 TW TW085110167A patent/TW427952B/zh not_active IP Right Cessation
- 1996-09-08 UA UA98020935A patent/UA51663C2/uk unknown
1998
- 1998-02-20 NO NO980734A patent/NO980734D0/no unknown
- 1998-02-23 MX MX9801464A patent/MX9801464A/es not_active IP Right Cessation
- 1998-10-14 HK HK02104685.0A patent/HK1043661B/zh not_active IP Right Cessation
- 1998-10-14 HK HK98111262A patent/HK1010280A1/xx not_active IP Right Cessation

Also Published As

Publication number	Publication date
CN1091542C (zh)	2002-09-25
NO980734L (no)	1998-02-20
EP1199740A3 (en)	2003-09-03
DE69635427T2 (de)	2006-07-27
EP1199740A2 (en)	2002-04-24
HUP9802482A3 (en)	2002-11-28
IL123042A (en)	2001-04-30
HK1043661B (zh)	2006-03-03
JPH11514496A (ja)	1999-12-07
AU6872096A (en)	1997-03-19
IL123042A0 (en)	1998-09-24
PL325121A1 (en)	1998-07-06
CZ51798A3 (cs)	1998-07-15
RU2141700C1 (ru)	1999-11-20
KR19990037642A (ko)	1999-05-25
HUP9802482A2 (hu)	1999-02-01
CZ291335B6 (cs)	2003-02-12
EP0846334B1 (en)	2002-11-13
ES2250292T3 (es)	2006-04-16
DE69624830D1 (de)	2002-12-19
DE19531031A1 (de)	1997-02-27
SK21298A3 (en)	1998-10-07
WO1997008742A1 (en)	1997-03-06
DE69635427D1 (de)	2005-12-15
PT846334E (pt)	2003-02-28
DE69624830T2 (de)	2003-03-27
ES2186800T3 (es)	2003-05-16
MX9801464A (es)	1998-11-30
EP0846334A1 (en)	1998-06-10
CA2228168A1 (en)	1997-03-06
DE19531031C2 (de)	1997-08-21
SK284835B6 (sk)	2005-12-01
PL183355B1 (pl)	2002-06-28
TW427952B (en)	2001-04-01
SI1199740T1 (sl)	2006-06-30
DK1199740T3 (da)	2006-03-27
UA51663C2 (uk)	2002-12-16
JP3857314B2 (ja)	2006-12-13
DK0846334T3 (da)	2003-02-10
EP1199740B1 (en)	2005-11-09
ATE309613T1 (de)	2005-11-15
HK1043661A1 (en)	2002-09-20
CN1192824A (zh)	1998-09-09
ATE227885T1 (de)	2002-11-15
HK1010280A1 (en)	1999-06-17
AU697397B2 (en)	1998-10-08

Publication	Publication Date	Title
NO980734D0 (no)	1998-02-20	Fremgangsmåte for törking av silisium
EP0459148A3 (en)	1992-10-14	Dry eye treatment process and solution
FI841044A0 (fi)	1984-03-15	Foerfarande i anslutning till triglyriceridoljor
DE59008544D1 (de)	1995-03-30	Nasschemische Strukturätzung von Silizium.
DE60131897D1 (de)	2008-01-24	Verfahren und vorrichtung zur erzeugung von tröpfchen
JPS5735323A (en)	1982-02-25	Removal of photoresist film
JPS5414165A (en)	1979-02-02	Selective oxidation method for semiconductor substrate
KR910001904A (ko)	1991-01-31	다결정실리콘 산화에 의한 ldd 형성방법
CA2160039A1 (en)	1996-08-15	Method for separating sulfone from a hydrocarbon stream having a small concentration of sulfone
JPS6394627A (ja)	1988-04-25	半導体の製造装置
JPS5347179A (en)	1978-04-27	Method of coating lamp bubls with liquid
SU702356A2 (ru)	1979-12-05	Устройство дл регулировани давлени и уровн жидкости
JPS5522325A (en)	1980-02-18	Waste liquid treatment using active sludge
JPS57211235A (en)	1982-12-25	Manufacture of semiconductor device
KR980003884A (ko)	1998-03-30	레지스트 패턴 형성방법
KR910019127A (ko)	1991-11-30	반도체장치의 웰(Well) 영역형성방법
KR920020742A (ko)	1992-11-21	반도체 장치의 기준 전극 제조방법
JPS6446931A (en)	1989-02-21	Etching of silicon trench
JPS5363668A (en)	1978-06-07	Apparatus for settling separation
GB2190368B (en)	1989-12-13	Method of removing film from dendritic web silicon
JPS5561028A (en)	1980-05-08	Preparation of semiconductor device
JPS52134078A (en)	1977-11-09	Separation of effective component from distillers.s solubles
JPS57139927A (en)	1982-08-30	Manufacture of semiconductor integrated circuit
SU1797411A1 (ru)	1996-04-20	Способ формирования структуры полупроводник - диэлектрик
KR970052730A (ko)	1997-07-29	반도체 장치의 피에스지(psg)막 패턴 형성방법