WO2004090201A3 - Procede de fabrication de cristaux monocristallins - Google Patents

Procede de fabrication de cristaux monocristallins Download PDF

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Publication number
WO2004090201A3
WO2004090201A3 PCT/FR2004/000740 FR2004000740W WO2004090201A3 WO 2004090201 A3 WO2004090201 A3 WO 2004090201A3 FR 2004000740 W FR2004000740 W FR 2004000740W WO 2004090201 A3 WO2004090201 A3 WO 2004090201A3
Authority
WO
WIPO (PCT)
Prior art keywords
production
monocrystalline
crystals
monocrystalline crystals
film
Prior art date
Application number
PCT/FR2004/000740
Other languages
English (en)
Other versions
WO2004090201A2 (fr
Inventor
Fabrice Letertre
Original Assignee
Soitec Silicon On Insulator
Fabrice Letertre
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Soitec Silicon On Insulator, Fabrice Letertre filed Critical Soitec Silicon On Insulator
Publication of WO2004090201A2 publication Critical patent/WO2004090201A2/fr
Publication of WO2004090201A3 publication Critical patent/WO2004090201A3/fr

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/18—Epitaxial-layer growth characterised by the substrate
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/36—Carbides

Abstract

L'invention concerne un procédé de réalisation d'un cristal en un premier matériau monocristallin, comportant : - une étape d'assemblage d'un premier substrat (2) et d'au moins un film (4) ou d'au moins une couche en un second matériau monocristallin (6), - une étape de croissance dudit premier matériau sur le film ou la couche mince.
PCT/FR2004/000740 2003-03-31 2004-03-25 Procede de fabrication de cristaux monocristallins WO2004090201A2 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR0303928 2003-03-31
FR0303928A FR2852974A1 (fr) 2003-03-31 2003-03-31 Procede de fabrication de cristaux monocristallins

Publications (2)

Publication Number Publication Date
WO2004090201A2 WO2004090201A2 (fr) 2004-10-21
WO2004090201A3 true WO2004090201A3 (fr) 2004-11-18

Family

ID=32947296

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/FR2004/000740 WO2004090201A2 (fr) 2003-03-31 2004-03-25 Procede de fabrication de cristaux monocristallins

Country Status (3)

Country Link
US (1) US20040187766A1 (fr)
FR (1) FR2852974A1 (fr)
WO (1) WO2004090201A2 (fr)

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US7407869B2 (en) 2000-11-27 2008-08-05 S.O.I.Tec Silicon On Insulator Technologies Method for manufacturing a free-standing substrate made of monocrystalline semiconductor material
US7638346B2 (en) 2001-12-24 2009-12-29 Crystal Is, Inc. Nitride semiconductor heterostructures and related methods
US20060005763A1 (en) 2001-12-24 2006-01-12 Crystal Is, Inc. Method and apparatus for producing large, single-crystals of aluminum nitride
US8545629B2 (en) * 2001-12-24 2013-10-01 Crystal Is, Inc. Method and apparatus for producing large, single-crystals of aluminum nitride
US7601441B2 (en) * 2002-06-24 2009-10-13 Cree, Inc. One hundred millimeter high purity semi-insulating single crystal silicon carbide wafer
US7314521B2 (en) * 2004-10-04 2008-01-01 Cree, Inc. Low micropipe 100 mm silicon carbide wafer
US7314520B2 (en) 2004-10-04 2008-01-01 Cree, Inc. Low 1c screw dislocation 3 inch silicon carbide wafer
JP4384019B2 (ja) * 2004-12-08 2009-12-16 住友電気工業株式会社 ヘッドランプ
JP2009517329A (ja) 2005-11-28 2009-04-30 クリスタル・イズ，インコーポレイテッド 低欠陥の大きな窒化アルミニウム結晶及びそれを製造する方法
WO2007065018A2 (fr) 2005-12-02 2007-06-07 Crystal Is, Inc. Cristaux de nitrure d'aluminium dope, procede de production de ces derniers
US20090087645A1 (en) * 2006-01-12 2009-04-02 Sumitomo Electric Industries, Ltd. Method for Manufacturing Aluminum Nitride Crystal, Aluminum Nitride Crystal, Aluminum Nitride Crystal Substrate and Semiconductor Device
CN101401195B (zh) * 2006-03-28 2010-11-03 夏普株式会社 半导体元件的转印方法和半导体装置的制造方法以及半导体装置
EP2007933B1 (fr) 2006-03-30 2017-05-10 Crystal Is, Inc. Procédé de dopage réglable de cristaux massifs de nitrure d'aluminium
US9034103B2 (en) 2006-03-30 2015-05-19 Crystal Is, Inc. Aluminum nitride bulk crystals having high transparency to ultraviolet light and methods of forming them
US8980445B2 (en) * 2006-07-06 2015-03-17 Cree, Inc. One hundred millimeter SiC crystal grown on off-axis seed
US9771666B2 (en) 2007-01-17 2017-09-26 Crystal Is, Inc. Defect reduction in seeded aluminum nitride crystal growth
WO2008088838A1 (fr) 2007-01-17 2008-07-24 Crystal Is, Inc. Réduction des défauts de croissance de cristaux de nitrure d'aluminium ensemencés
US9028612B2 (en) 2010-06-30 2015-05-12 Crystal Is, Inc. Growth of large aluminum nitride single crystals with thermal-gradient control
JP5730484B2 (ja) 2007-01-26 2015-06-10 クリスタル アイエス インコーポレイテッド 厚みのある擬似格子整合型の窒化物エピタキシャル層
US8080833B2 (en) 2007-01-26 2011-12-20 Crystal Is, Inc. Thick pseudomorphic nitride epitaxial layers
JP5271279B2 (ja) * 2007-02-08 2013-08-21 ソイテック 高熱消散基板を製造する方法
US8088220B2 (en) * 2007-05-24 2012-01-03 Crystal Is, Inc. Deep-eutectic melt growth of nitride crystals
JP5303941B2 (ja) * 2008-01-31 2013-10-02 住友電気工業株式会社 ＡｌｘＧａ１−ｘＮ単結晶の成長方法
EP2314738A4 (fr) * 2008-07-01 2014-08-13 Sumitomo Electric Industries PROCÉDÉ DE PRODUCTION D'UN MONOCRISTAL D'AlxGa(1-X)N, MONOCRISTAL D'AlxGa(1-X)N ET OPTIQUES
FR2939151A1 (fr) * 2008-12-01 2010-06-04 Soitec Silicon On Insulator Lingots formes d'au moins deux lingots elementaires, un procede de fabrication et une plaquette qui en est issue
JP5447206B2 (ja) 2010-06-15 2014-03-19 住友電気工業株式会社 炭化珪素単結晶の製造方法および炭化珪素基板
US8404562B2 (en) * 2010-09-30 2013-03-26 Infineon Technologies Ag Method for manufacturing a composite wafer having a graphite core, and composite wafer having a graphite core
US8822306B2 (en) * 2010-09-30 2014-09-02 Infineon Technologies Ag Method for manufacturing a composite wafer having a graphite core, and composite wafer having a graphite core
FR2977069B1 (fr) 2011-06-23 2014-02-07 Soitec Silicon On Insulator Procede de fabrication d'une structure semi-conductrice mettant en oeuvre un collage temporaire
US8962359B2 (en) 2011-07-19 2015-02-24 Crystal Is, Inc. Photon extraction from nitride ultraviolet light-emitting devices
FR2995136B1 (fr) * 2012-09-04 2015-06-26 Soitec Silicon On Insulator Pseudo-substrat avec efficacite amelioree d'utilisation d'un materiau monocristallin
EP2973664B1 (fr) 2013-03-15 2020-10-14 Crystal Is, Inc. Dispositif émetteur d'ultraviolet et procédé pour former un contact sur un dispositif émetteur d'ultraviolet
TWI638071B (zh) 2013-08-08 2018-10-11 三菱化學股份有限公司 自立ＧａＮ基板、ＧａＮ結晶、ＧａＮ單結晶之製造方法及半導體裝置之製造方法
JP6477501B2 (ja) 2014-01-17 2019-03-06 三菱ケミカル株式会社 ＧａＮ基板、ＧａＮ基板の製造方法、ＧａＮ結晶の製造方法および半導体デバイスの製造方法
JP6129784B2 (ja) * 2014-05-26 2017-05-17 住友化学株式会社 Ｉｉｉ族窒化物基板の製造方法
CN107208312B (zh) * 2015-01-29 2019-10-01 日本碍子株式会社 自立基板、功能元件及其制造方法
US10364510B2 (en) * 2015-11-25 2019-07-30 Sciocs Company Limited Substrate for crystal growth having a plurality of group III nitride seed crystals arranged in a disc shape
EP3604214B1 (fr) * 2017-03-22 2022-11-16 NGK Insulators, Ltd. Particules de nitrure d'aluminium

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Also Published As

Publication number Publication date
WO2004090201A2 (fr) 2004-10-21
FR2852974A1 (fr) 2004-10-01
US20040187766A1 (en) 2004-09-30

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