NO20064912L - Fremgangsmate og anordning for produksjon av bladmetall - Google Patents

Fremgangsmate og anordning for produksjon av bladmetall

Info

Publication number
NO20064912L
NO20064912L NO20064912A NO20064912A NO20064912L NO 20064912 L NO20064912 L NO 20064912L NO 20064912 A NO20064912 A NO 20064912A NO 20064912 A NO20064912 A NO 20064912A NO 20064912 L NO20064912 L NO 20064912L
Authority
NO
Norway
Prior art keywords
sheet metal
substrate
liquid metal
casting vessel
casting
Prior art date
Application number
NO20064912A
Other languages
English (en)
Other versions
NO337426B1 (no
Inventor
Axel Georg Schonecker
Karl Ingo Steinbach
Original Assignee
Rgs Dev Bv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rgs Dev Bv filed Critical Rgs Dev Bv
Publication of NO20064912L publication Critical patent/NO20064912L/no
Publication of NO337426B1 publication Critical patent/NO337426B1/no

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/007—Pulling on a substrate
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Continuous Casting (AREA)
  • Powder Metallurgy (AREA)
  • Silicon Compounds (AREA)

Abstract

Oppfinnelsen vedrører en fremgangsmåte og en anordning for å produsere bladmetall ved bruk av bladstøpeprinsipp. Fremgangsmåten omfatter trinnene å fylle et støpekar med flytende metall, bevege et substrat gjennom bunnen av støpekaret, hvor substratbeitet er ved en lavere temperatur enn smeltepunktet til det flytende metallet i bunnen av støpekaret, slik at et bunnlag til det flytende metallet krystalliseres på substratet og et bladmetall dannes på substratet på en side av støpekaret. Fremgangsmåten er karakterisert ved trinnene å måle minst én ut av tykkelse og vekt til bladmetallet, og å justere kontaktoverflatearealet mellom det flytende metallet og substratet som en funksjon av den målte verdien for tykkelse og/eller vekt av bladmetallet som produseres.
NO20064912A 2004-04-26 2006-10-26 Fremgangsmåte og anordning for produksjon av bladmetall NO337426B1 (no)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
NL1026043A NL1026043C2 (nl) 2004-04-26 2004-04-26 Werkwijze en inrichting voor het fabriceren van metalen folies.
PCT/NL2005/000310 WO2005104244A1 (en) 2004-04-26 2005-04-26 Method and device for producing metal foils

Publications (2)

Publication Number Publication Date
NO20064912L true NO20064912L (no) 2007-01-23
NO337426B1 NO337426B1 (no) 2016-04-11

Family

ID=34966604

Family Applications (1)

Application Number Title Priority Date Filing Date
NO20064912A NO337426B1 (no) 2004-04-26 2006-10-26 Fremgangsmåte og anordning for produksjon av bladmetall

Country Status (11)

Country Link
US (1) US8246745B2 (no)
EP (1) EP1743385B1 (no)
JP (1) JP4885845B2 (no)
KR (1) KR101192870B1 (no)
AU (1) AU2005236766B2 (no)
BR (1) BRPI0510265A (no)
DE (1) DE602005010998D1 (no)
ES (1) ES2317229T3 (no)
NL (1) NL1026043C2 (no)
NO (1) NO337426B1 (no)
WO (1) WO2005104244A1 (no)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2009108358A1 (en) 2008-02-29 2009-09-03 Corning Incorporated Methods of making an unsupported article of pure or doped semiconducting material
US7771643B1 (en) 2009-02-27 2010-08-10 Corning Incorporated Methods of making an unsupported article of semiconducting material by controlled undercooling
US8540920B2 (en) 2009-05-14 2013-09-24 Corning Incorporated Methods of making an article of semiconducting material on a mold comprising particles of a semiconducting material
US8480803B2 (en) 2009-10-30 2013-07-09 Corning Incorporated Method of making an article of semiconducting material
US8591795B2 (en) * 2009-12-04 2013-11-26 Corning Incorporated Method of exocasting an article of semiconducting material
US8242033B2 (en) 2009-12-08 2012-08-14 Corning Incorporated High throughput recrystallization of semiconducting materials
NL2004209C2 (en) * 2010-02-08 2011-08-09 Rgs Dev B V Apparatus and method for the production of semiconductor material foils.
WO2011156648A1 (en) 2010-06-09 2011-12-15 President And Fellows Of Harvard College Method for producing films
US20110305891A1 (en) * 2010-06-14 2011-12-15 Korea Institute Of Energy Research Method and apparatus for manufacturing silicon substrate with excellent productivity and surface quality using continuous casting
US20110303290A1 (en) * 2010-06-14 2011-12-15 Korea Institute Of Energy Research Method and apparatus for manufacturing silicon substrate with excellent surface quality using inert gas blowing
US9057146B2 (en) 2010-08-24 2015-06-16 Varian Semiconductor Equipment Associates, Inc. Eddy current thickness measurement apparatus
WO2014001886A1 (en) 2012-06-27 2014-01-03 Rgs Development B.V. Film of polycrystalline semiconductor material, method of making same and orienting/undercooling molds therefor, and electronic device
WO2014001888A1 (en) 2012-06-27 2014-01-03 Rgs Development B.V. Film of polycrystalline semiconductor material, method of making same and undercooling molds therefor, and electronic device

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4110133A (en) * 1976-04-29 1978-08-29 The Post Office Growth of semiconductor compounds by liquid phase epitaxy
FR2556109B2 (fr) * 1983-08-29 1986-09-12 Comp Generale Electricite Dispositif pour deposer en regime continu une couche de silicium polycristallin sur un ruban de carbone
FR2551233B1 (fr) * 1983-08-29 1985-10-25 Comp Generale Electricite Dispositif pour deposer en regime continu une couche de silicium polycristallin sur un ruban de carbone
DE3419137A1 (de) * 1984-05-23 1985-11-28 Bayer Ag, 5090 Leverkusen Verfahren und vorrichtung zur herstellung von halbleiterfolien
DE4102484A1 (de) * 1991-01-29 1992-07-30 Bayer Ag Verfahren zur herstellung von metallscheiben sowie die verwendung von siliciumscheiben
DE10047929B4 (de) * 2000-09-27 2013-04-11 Rgs Development B.V. Verfahren und Vorrichtung zur Herstellung von Halbleiter- und Metallscheiben oder -folien

Also Published As

Publication number Publication date
AU2005236766B2 (en) 2010-01-21
NO337426B1 (no) 2016-04-11
DE602005010998D1 (de) 2008-12-24
BRPI0510265A (pt) 2007-10-30
KR20070004994A (ko) 2007-01-09
EP1743385B1 (en) 2008-11-12
US20090044925A1 (en) 2009-02-19
AU2005236766A1 (en) 2005-11-03
JP2007534600A (ja) 2007-11-29
KR101192870B1 (ko) 2012-10-18
WO2005104244A1 (en) 2005-11-03
ES2317229T3 (es) 2009-04-16
JP4885845B2 (ja) 2012-02-29
US8246745B2 (en) 2012-08-21
NL1026043C2 (nl) 2005-10-27
EP1743385A1 (en) 2007-01-17

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