NO126728B - - Google Patents
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- Publication number
- NO126728B NO126728B NO462468A NO462468A NO126728B NO 126728 B NO126728 B NO 126728B NO 462468 A NO462468 A NO 462468A NO 462468 A NO462468 A NO 462468A NO 126728 B NO126728 B NO 126728B
- Authority
- NO
- Norway
- Prior art keywords
- weight
- antimony
- gold
- alloying
- arsenic
- Prior art date
Links
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 24
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 18
- 229910052710 silicon Inorganic materials 0.000 claims description 18
- 239000010703 silicon Substances 0.000 claims description 18
- 229910052785 arsenic Inorganic materials 0.000 claims description 16
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 claims description 16
- 229910052787 antimony Inorganic materials 0.000 claims description 14
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 claims description 14
- 238000005275 alloying Methods 0.000 claims description 13
- 238000000034 method Methods 0.000 claims description 10
- 239000004065 semiconductor Substances 0.000 claims description 9
- 229910045601 alloy Inorganic materials 0.000 claims description 8
- 239000000956 alloy Substances 0.000 claims description 8
- 239000011888 foil Substances 0.000 claims description 8
- 239000010931 gold Substances 0.000 claims description 8
- 229910052737 gold Inorganic materials 0.000 claims description 8
- 229910001020 Au alloy Inorganic materials 0.000 claims description 5
- 239000003353 gold alloy Substances 0.000 claims description 5
- 238000004519 manufacturing process Methods 0.000 claims description 5
- 238000010309 melting process Methods 0.000 claims description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 3
- 230000007935 neutral effect Effects 0.000 claims description 2
- 239000000843 powder Substances 0.000 claims description 2
- 238000003825 pressing Methods 0.000 claims 1
- 235000012431 wafers Nutrition 0.000 description 9
- 238000010438 heat treatment Methods 0.000 description 3
- 230000035515 penetration Effects 0.000 description 3
- 229910001245 Sb alloy Inorganic materials 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 239000002140 antimony alloy Substances 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000003723 Smelting Methods 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 238000005097 cold rolling Methods 0.000 description 1
- 230000006835 compression Effects 0.000 description 1
- 238000007906 compression Methods 0.000 description 1
- 230000001143 conditioned effect Effects 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 238000009736 wetting Methods 0.000 description 1
- 239000002023 wood Substances 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B65—CONVEYING; PACKING; STORING; HANDLING THIN OR FILAMENTARY MATERIAL
- B65D—CONTAINERS FOR STORAGE OR TRANSPORT OF ARTICLES OR MATERIALS, e.g. BAGS, BARRELS, BOTTLES, BOXES, CANS, CARTONS, CRATES, DRUMS, JARS, TANKS, HOPPERS, FORWARDING CONTAINERS; ACCESSORIES, CLOSURES, OR FITTINGS THEREFOR; PACKAGING ELEMENTS; PACKAGES
- B65D77/00—Packages formed by enclosing articles or materials in preformed containers, e.g. boxes, cartons, sacks or bags
- B65D77/10—Container closures formed after filling
- B65D77/20—Container closures formed after filling by applying separate lids or covers, i.e. flexible membrane or foil-like covers
- B65D77/2024—Container closures formed after filling by applying separate lids or covers, i.e. flexible membrane or foil-like covers the cover being welded or adhered to the container
- B65D77/2028—Means for opening the cover other than, or in addition to, a pull tab
- B65D77/2032—Means for opening the cover other than, or in addition to, a pull tab by peeling or tearing the cover from the container
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B65—CONVEYING; PACKING; STORING; HANDLING THIN OR FILAMENTARY MATERIAL
- B65D—CONTAINERS FOR STORAGE OR TRANSPORT OF ARTICLES OR MATERIALS, e.g. BAGS, BARRELS, BOTTLES, BOXES, CANS, CARTONS, CRATES, DRUMS, JARS, TANKS, HOPPERS, FORWARDING CONTAINERS; ACCESSORIES, CLOSURES, OR FITTINGS THEREFOR; PACKAGING ELEMENTS; PACKAGES
- B65D75/00—Packages comprising articles or materials partially or wholly enclosed in strips, sheets, blanks, tubes, or webs of flexible sheet material, e.g. in folded wrappers
- B65D75/28—Articles or materials wholly enclosed in composite wrappers, i.e. wrappers formed by associating or interconnecting two or more sheets or blanks
- B65D75/30—Articles or materials enclosed between two opposed sheets or blanks having their margins united, e.g. by pressure-sensitive adhesive, crimping, heat-sealing, or welding
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B65—CONVEYING; PACKING; STORING; HANDLING THIN OR FILAMENTARY MATERIAL
- B65D—CONTAINERS FOR STORAGE OR TRANSPORT OF ARTICLES OR MATERIALS, e.g. BAGS, BARRELS, BOTTLES, BOXES, CANS, CARTONS, CRATES, DRUMS, JARS, TANKS, HOPPERS, FORWARDING CONTAINERS; ACCESSORIES, CLOSURES, OR FITTINGS THEREFOR; PACKAGING ELEMENTS; PACKAGES
- B65D77/00—Packages formed by enclosing articles or materials in preformed containers, e.g. boxes, cartons, sacks or bags
- B65D77/10—Container closures formed after filling
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B65—CONVEYING; PACKING; STORING; HANDLING THIN OR FILAMENTARY MATERIAL
- B65D—CONTAINERS FOR STORAGE OR TRANSPORT OF ARTICLES OR MATERIALS, e.g. BAGS, BARRELS, BOTTLES, BOXES, CANS, CARTONS, CRATES, DRUMS, JARS, TANKS, HOPPERS, FORWARDING CONTAINERS; ACCESSORIES, CLOSURES, OR FITTINGS THEREFOR; PACKAGING ELEMENTS; PACKAGES
- B65D2577/00—Packages formed by enclosing articles or materials in preformed containers, e.g. boxes, cartons, sacks, bags
- B65D2577/10—Container closures formed after filling
- B65D2577/20—Container closures formed after filling by applying separate lids or covers
- B65D2577/2025—Multi-layered container, e.g. laminated, coated
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B65—CONVEYING; PACKING; STORING; HANDLING THIN OR FILAMENTARY MATERIAL
- B65D—CONTAINERS FOR STORAGE OR TRANSPORT OF ARTICLES OR MATERIALS, e.g. BAGS, BARRELS, BOTTLES, BOXES, CANS, CARTONS, CRATES, DRUMS, JARS, TANKS, HOPPERS, FORWARDING CONTAINERS; ACCESSORIES, CLOSURES, OR FITTINGS THEREFOR; PACKAGING ELEMENTS; PACKAGES
- B65D2577/00—Packages formed by enclosing articles or materials in preformed containers, e.g. boxes, cartons, sacks, bags
- B65D2577/10—Container closures formed after filling
- B65D2577/20—Container closures formed after filling by applying separate lids or covers
- B65D2577/2041—Pull tabs
- B65D2577/205—Pull tabs integral with the closure
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Composite Materials (AREA)
- Packages (AREA)
- Die Bonding (AREA)
- Containers Opened By Tearing Frangible Portions (AREA)
- Laminated Bodies (AREA)
Description
Elektrisk halvleder-bygge-element og fremgangsmåte til dets fremstilling. Electric semiconductor building element and method for its production.
Fra svensk patentskrift nr. 148 247 er From Swedish patent document no. 148 247 is
det kjent ved fremstilling av silicium-kota - the known in the production of silicon-kota -
lingselementer med usymmetrisk lednings-evne å legere en siliciumskive med et flateinnhold av flere mm2 sammen med et antimonholdig gullfolie med større flateinnhold. Det kjente koblingselement er bare ling elements with asymmetric conductivity to alloy a silicon wafer with a surface area of several mm2 together with an antimony-containing gold foil with a larger surface area. The known coupling element is only
bestemt for meget svake strømmer, av stør-relsesordenen milli-ampére, og er i overensstemmelse med dette forsynt med en punkt-formet elektrode på den annen flatside av intended for very weak currents, of the order of milliamperes, and is accordingly provided with a point-shaped electrode on the other flat side of
siliciumskiven. For legeringsoperasjonen the silicon wafer. For the alloy operation
blir foliet, siliciumskiven og en aluminium-tråd hvis spiss berører den øvre flatside av becomes the foil, the silicon wafer and an aluminum wire whose tip touches the upper flat side of
siliciumskiven, lagt på et tantalbånd, som the silicon wafer, placed on a tantalum band, which
varmes opp med et kort strømstøt mens der is heated with a short current while there
samtidig blåses en strøm av nøytral gass at the same time a stream of neutral gas is blown
mot anordningen ovenfra. På denne måte. towards the device from above. In this way.
blir spissen av aluminiumtråden legert inn the tip of the aluminum wire is alloyed in
i siliciumskiven, mens gullfoliet bare sted-vis blir legert sammen med undersiden av in the silicon wafer, while the gold foil is only in places alloyed together with the underside of
siliciumskiven uten at gullfoliet kan opp-løses fullstendig i legeringsvæsken. the silicon wafer without the gold foil being able to dissolve completely in the alloy liquid.
Til forskjell fra dette løser man ved In contrast to this, one solves with wood
den foreliggende oppfinnelse den oppgave the present invention that task
ved større kontaktflater med flateinnhold for larger contact surfaces with surface content
fra flere mm<2> til noen cm<2> ved hjelp av et from several mm<2> to a few cm<2> using a
gullfolie ikke bare å realisere omrissene og gold foil not only realizing the outlines and
dimensjonene av legeringsflåtene, men og-så å oppnå en foreskreven inntrengningsdybde jevnt over hele legeringsf laten. I the dimensions of the alloy rafts, but also to achieve a prescribed penetration depth evenly over the entire alloy surface. IN
overensstemmelse med dette går oppfinnelsen ut på et elektrisk halvleder-bygge-element med et skiveformet, monokrystallinsk halvlederlegeme av silicium og med in accordance with this, the invention concerns an electrical semiconductor building element with a disk-shaped, monocrystalline semiconductor body made of silicon and with
flere tilslutningskontakter, hvorav minst several connection contacts, of which at least
én består av et antimonholdig gullfolie som anbringes på en flatside av siliciumskiven ved en legeringsprosess. Oppfinnelsen er karakterisert ved at gullfoliets antimoninnhold utgjør 0,2-5 vektprosent, fortrinsvis 1,0 vektprosent, og at gullfoliet inneholder en tilsetning av 10-3 til IO1 vektprosent arsen. De angitte nedre grenser for innholdet av antimon og arsen er gitt ved det krav at der selv ved et moderat trykk på mindre enn 1 kp/cm<2> under legeringsprosessen skal oppnås en tilstrekkelig fuktning. Fuktnin-gen blir fremfor alt på grund av arseninnholdet vesentlig bedret. Defekte lege-ringssteder, såkalte vorter, som delvis har vært iakttatt ved transistorer med et inn-legert gullfolie uten arsentilsetning og da førte til en minskning av sperrespenningen, blir nesten fullstendig undertrykket ved arsentilsetningen, så vrakprosenten ved produksjonen av slike halvlederelementer blir satt ned til en forsvinnende lav verdi. Den nevnte øvre grense for arseninnholdet er bl.a. gitt ved at den ønskede virkning blir oppnådd i tilfredsstillende grad og der ovenfor grensen ikke kan konstateres noen ytterligere økning hvor høyt man enn går med arseninnholdet. Forøvrig kan der ved overskridelse av de nevnte øvre grenser for antimoninnholdet og arseninnholdet være fare for at den ferdige gull-legering efter kjølningen neppe lenger lar seg valse ut til et tynt folie, og at det ferdig kontakterte siliciumelement efter kjølningen oppviser riss eller sprekker på grund av for stor sprøhet. Å undgå disse mangler ved å varm- one consists of an antimony-containing gold foil that is placed on a flat side of the silicon wafer by an alloying process. The invention is characterized in that the gold foil's antimony content amounts to 0.2-5 weight percent, preferably 1.0 weight percent, and that the gold foil contains an addition of 10-3 to 101 weight percent arsenic. The indicated lower limits for the content of antimony and arsenic are given by the requirement that, even at a moderate pressure of less than 1 kp/cm<2> during the alloying process, sufficient wetting must be achieved. Above all, due to the arsenic content, the humidity is significantly improved. Defective alloying sites, so-called warts, which have been observed in part in transistors with an alloyed gold foil without arsenic addition and then led to a reduction of the blocking voltage, are almost completely suppressed by the arsenic addition, so the scrap percentage in the production of such semiconductor elements is reduced to a vanishingly low value. The aforementioned upper limit for the arsenic content is, among other things, given that the desired effect is achieved to a satisfactory degree and where above the limit no further increase can be ascertained no matter how high the arsenic content is taken. Furthermore, if the aforementioned upper limits for the antimony content and the arsenic content are exceeded, there may be a risk that the finished gold alloy after cooling can hardly be rolled out into a thin foil, and that the fully contacted silicon element after cooling shows cracks or cracks due to of excessive brittleness. To avoid these defects by heating
valse gullfoliet er ikke tilladelig, fordi det oppvarmede metall ved berøringen med val-sene kan oppta ukontrollerte forurensnin-ger som forringer de elektriske egenskaper hos de ferdige siliciumelementer. rolled gold foil is not permitted, because the heated metal can absorb uncontrolled impurities when it comes into contact with the rolls, which impair the electrical properties of the finished silicon elements.
For fremstilling av et forbedret elektrisk halvlederbygge-element som beskre-vet smelter man fordelaktig ialt 100 vektdeler gull av høy renhet og antimon av høy renhet hvis andel herav utgjør 0,2-5 vektdeler, fortrinnsvis 1,0 vektdeler, og en tilsetning av 10-3 til 101 vektdeler arsen sammen til en legering. For innlegeringen av et valset folie av denne gull-legering i siliciumskiven blir den nødvendige legeringstemperatur opprettholdt i en tid av noen minutter. Derved blir det oppnådd at foliet oppløser seg fullstendig i legeringsvæsken og der inntrer en metallurgisk likevekts-tilstand betinget ved tostoff-diagrammet gull/silicium. Under denne forutsetning er inntrengningsdybden entydig bestemt ved gullmengden pr. flate-enhet, så den fore-skrevne inntrengningsdybde blir oppnådd ved at man gir det gullfolie som skal anvendes, en tilsvarende tykkelse ved kold-valsing. For the production of an improved electrical semiconductor building element as described, one advantageously melts a total of 100 parts by weight of high purity gold and high purity antimony, the proportion of which amounts to 0.2-5 parts by weight, preferably 1.0 parts by weight, and an addition of 10 -3 to 101 parts by weight of arsenic together to form an alloy. For the alloying of a rolled foil of this gold alloy in the silicon wafer, the necessary alloying temperature is maintained for a period of a few minutes. Thereby, it is achieved that the foil dissolves completely in the alloy liquid and a metallurgical state of equilibrium occurs, conditioned by the gold/silicon binary diagram. Under this assumption, the penetration depth is uniquely determined by the amount of gold per surface unit, so the prescribed penetration depth is achieved by giving the gold foil to be used a corresponding thickness during cold rolling.
Prepareringen av en egnet arsenholdig gull/antimon-legering kan fordelagtig skje på den måte at arsenet i en første smelteprosess tilsmeltes det anvendte antimon av høy renhet, og at det arsenholdige antimon i én eller flere ytterligere smelteprosesser legeres sammen med den tilhørende meng-de gull av høy renhet. Gullandelen kan eventuelt økes trinvis ved flere smelteprosesser. I sluttstadiet skal fortrinsvis meng-dene andelsvis være 99 % Au og 1 % Sb/As. The preparation of a suitable arsenic-containing gold/antimony alloy can advantageously take place in such a way that the arsenic is melted in a first melting process to the high-purity antimony used, and that the arsenic-containing antimony is alloyed together with the corresponding amount of gold in one or more further melting processes of high purity. The gold proportion can possibly be increased in stages by several smelting processes. In the final stage, the proportions should preferably be 99% Au and 1% Sb/As.
Den på denne måte fremstilte arsenholdige gull/antimonlegering kan valses ut til et folie ned til en tykkelse av 0,05 mm eller mindre. I form av et slikt folie er kontaktmetallet erfaringsmessig bekvemt å håndtere. The arsenical gold/antimony alloy produced in this way can be rolled out into a foil down to a thickness of 0.05 mm or less. In the form of such a foil, the contact metal is, from experience, convenient to handle.
Den egentlige legeringsprosess kan f. eks. gjennemføres ved hjelp av ettergiv-ende og innstillbare trykkanordninger hvori siliciumskivene med de på begge si-der motliggende kontaktfolier og eventuelt bærerplater innklemmes mellem trykkpla-ter f.eks. av grafitt og i denne tilstand un-derkastes opphetning til ca. 700-800° C i opptil noen minutter, eller ved innleiring av halvlederaggregatet i en pulverfylling f.eks. av grafittpulver og sammenpresning av denne samt opphetning som omtalt, eventuelt under moderat trykkbelastning opp til ca. 1 kp/cm<2> eller mindre. The actual alloying process can e.g. is carried out with the help of yielding and adjustable pressure devices in which the silicon wafers with the opposite contact foils on both sides and possibly carrier plates are sandwiched between pressure plates, e.g. of graphite and in this state is subject to heating to approx. 700-800° C for up to a few minutes, or when embedding the semiconductor assembly in a powder filling, e.g. of graphite powder and compression of this as well as heating as mentioned, possibly under moderate pressure load up to approx. 1 kp/cm<2> or less.
Claims (5)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CH1638267A CH456445A (en) | 1967-11-22 | 1967-11-22 | Sterilizable packaging |
Publications (1)
Publication Number | Publication Date |
---|---|
NO126728B true NO126728B (en) | 1973-03-19 |
Family
ID=4416875
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
NO462468A NO126728B (en) | 1967-11-22 | 1968-11-21 |
Country Status (9)
Country | Link |
---|---|
CH (1) | CH456445A (en) |
DE (2) | DE6752002U (en) |
DK (1) | DK115427B (en) |
ES (1) | ES160545Y (en) |
FR (1) | FR1593314A (en) |
GB (1) | GB1244338A (en) |
IS (1) | IS726B6 (en) |
NO (1) | NO126728B (en) |
SE (1) | SE334126B (en) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE8716157U1 (en) * | 1987-12-07 | 1988-03-24 | Pfanni-Werke Otto Eckart KG, 81671 München | Packaging sleeve for portioning a dry, rehydratable food |
EP2065316A1 (en) * | 2007-11-27 | 2009-06-03 | Alcan Technology & Management Ltd. | Sheet packaging |
EP2716551B1 (en) * | 2012-10-04 | 2016-03-23 | Å&R Carton Lund AB | Sealing membrane with pull-tab |
DE102016120236A1 (en) * | 2016-10-24 | 2018-05-09 | Jürgen Grüter | Dairy product serving container with conical bottom recess |
CN108058908A (en) * | 2016-11-08 | 2018-05-22 | 内蒙古伊利实业集团股份有限公司 | A kind of packing jar sealing cover |
-
1967
- 1967-11-22 CH CH1638267A patent/CH456445A/en unknown
-
1968
- 1968-09-26 DK DK463068A patent/DK115427B/en unknown
- 1968-09-26 DE DE19686752002 patent/DE6752002U/en not_active Expired
- 1968-11-14 IS IS1801A patent/IS726B6/en unknown
- 1968-11-19 DE DE19681809798 patent/DE1809798A1/en active Pending
- 1968-11-20 GB GB5508568A patent/GB1244338A/en not_active Expired
- 1968-11-21 FR FR1593314D patent/FR1593314A/fr not_active Expired
- 1968-11-21 ES ES1968160545U patent/ES160545Y/en not_active Expired
- 1968-11-21 NO NO462468A patent/NO126728B/no unknown
- 1968-11-21 SE SE1587668A patent/SE334126B/xx unknown
Also Published As
Publication number | Publication date |
---|---|
IS1801A7 (en) | 1969-05-23 |
GB1244338A (en) | 1971-08-25 |
FR1593314A (en) | 1970-05-25 |
DE6752002U (en) | 1969-01-30 |
IS726B6 (en) | 1970-09-28 |
DE1809798A1 (en) | 1969-07-17 |
CH456445A (en) | 1968-07-31 |
ES160545U (en) | 1970-12-01 |
DK115427B (en) | 1969-10-06 |
ES160545Y (en) | 1971-09-01 |
SE334126B (en) | 1971-04-05 |
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