NL7920079A - Meerstraps-lawinefotodetector met geringe ruis. - Google Patents

Meerstraps-lawinefotodetector met geringe ruis. Download PDF

Info

Publication number: NL7920079A
Authority: NL; Netherlands
Prior art keywords: layer; layers; series; pair; pairs
Prior art date: 1978-10-06

Application number

NL7920079A

Other languages

English (en)

Dutch (nl)

Original Assignee

Western Electric Co

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1978-10-06

Filing date

1979-09-21

Publication date

1980-08-29

1979-09-21 Application filed by Western Electric Co filed Critical Western Electric Co

1980-08-29 Publication of NL7920079A publication Critical patent/NL7920079A/nl

Links

239000000463 material Substances 0.000 claims description 57
239000000758 substrate Substances 0.000 claims description 27
150000001875 compounds Chemical class 0.000 claims description 19
239000004065 semiconductor Substances 0.000 claims description 14
229910052733 gallium Inorganic materials 0.000 claims description 10
230000005855 radiation Effects 0.000 claims description 9
229910004613 CdTe Inorganic materials 0.000 claims description 8
229910000530 Gallium indium arsenide Inorganic materials 0.000 claims description 7
238000000576 coating method Methods 0.000 claims description 4
230000003667 anti-reflective effect Effects 0.000 claims description 3
230000005540 biological transmission Effects 0.000 claims description 3
230000003247 decreasing effect Effects 0.000 claims description 3
229910052738 indium Inorganic materials 0.000 claims description 3
229910052782 aluminium Inorganic materials 0.000 claims 6
230000000284 resting effect Effects 0.000 claims 3
239000011248 coating agent Substances 0.000 claims 2
125000005842 heteroatom Chemical group 0.000 claims 1
239000000243 solution Substances 0.000 description 14
238000000034 method Methods 0.000 description 13
238000007667 floating Methods 0.000 description 9
239000007788 liquid Substances 0.000 description 8
230000004044 response Effects 0.000 description 8
239000000203 mixture Substances 0.000 description 6
229910052785 arsenic Inorganic materials 0.000 description 5
239000000969 carrier Substances 0.000 description 5
230000008569 process Effects 0.000 description 5
230000009467 reduction Effects 0.000 description 5
229910052698 phosphorus Inorganic materials 0.000 description 4
230000035945 sensitivity Effects 0.000 description 4
JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 3
229910001218 Gallium arsenide Inorganic materials 0.000 description 3
OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 3
XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
230000003321 amplification Effects 0.000 description 3
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229910052732 germanium Inorganic materials 0.000 description 2
GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 2
229910052737 gold Inorganic materials 0.000 description 2
238000004519 manufacturing process Methods 0.000 description 2
230000003287 optical effect Effects 0.000 description 2
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239000007787 solid Substances 0.000 description 2
238000001228 spectrum Methods 0.000 description 2
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238000004781 supercooling Methods 0.000 description 2
HTSGKJQDMSTCGS-UHFFFAOYSA-N 1,4-bis(4-chlorophenyl)-2-(4-methylphenyl)sulfonylbutane-1,4-dione Chemical compound C1=CC(C)=CC=C1S(=O)(=O)C(C(=O)C=1C=CC(Cl)=CC=1)CC(=O)C1=CC=C(Cl)C=C1 HTSGKJQDMSTCGS-UHFFFAOYSA-N 0.000 description 1
229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 1
OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
239000004215 Carbon black (E152) Substances 0.000 description 1
-1 GaAsSb / AlGaAsSb Inorganic materials 0.000 description 1
229910005542 GaSb Inorganic materials 0.000 description 1
UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
229910000673 Indium arsenide Inorganic materials 0.000 description 1
241001122767 Theaceae Species 0.000 description 1
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239000000956 alloy Substances 0.000 description 1
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238000006731 degradation reaction Methods 0.000 description 1
238000001514 detection method Methods 0.000 description 1
238000010893 electron trap Methods 0.000 description 1
NLFBCYMMUAKCPC-KQQUZDAGSA-N ethyl (e)-3-[3-amino-2-cyano-1-[(e)-3-ethoxy-3-oxoprop-1-enyl]sulfanyl-3-oxoprop-1-enyl]sulfanylprop-2-enoate Chemical compound CCOC(=O)\C=C\SC(=C(C#N)C(N)=O)S\C=C\C(=O)OCC NLFBCYMMUAKCPC-KQQUZDAGSA-N 0.000 description 1
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239000004744 fabric Substances 0.000 description 1
230000002349 favourable effect Effects 0.000 description 1
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230000004907 flux Effects 0.000 description 1
229910002804 graphite Inorganic materials 0.000 description 1
239000010439 graphite Substances 0.000 description 1
230000005524 hole trap Effects 0.000 description 1
229930195733 hydrocarbon Natural products 0.000 description 1
150000002430 hydrocarbons Chemical class 0.000 description 1
229910052739 hydrogen Inorganic materials 0.000 description 1
239000001257 hydrogen Substances 0.000 description 1
RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 description 1
230000001939 inductive effect Effects 0.000 description 1
238000002329 infrared spectrum Methods 0.000 description 1
238000002347 injection Methods 0.000 description 1
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230000007246 mechanism Effects 0.000 description 1
230000006911 nucleation Effects 0.000 description 1
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238000005498 polishing Methods 0.000 description 1
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238000005215 recombination Methods 0.000 description 1
230000002787 reinforcement Effects 0.000 description 1
229920006395 saturated elastomer Polymers 0.000 description 1
VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
GFWRVVCDTLRWPK-KPKJPENVSA-N sofalcone Chemical compound C1=CC(OCC=C(C)C)=CC=C1\C=C\C(=O)C1=CC=C(OCC=C(C)C)C=C1OCC(O)=O GFWRVVCDTLRWPK-KPKJPENVSA-N 0.000 description 1
239000010902 straw Substances 0.000 description 1

Classifications

- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/111—Devices sensitive to infrared, visible or ultraviolet radiation characterised by at least three potential barriers, e.g. photothyristors
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L29/201—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds including two or more compounds, e.g. alloys
- H01L29/205—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds including two or more compounds, e.g. alloys in different semiconductor regions, e.g. heterojunctions
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
- H01L31/107—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier working in avalanche mode, e.g. avalanche photodiodes
- H01L31/1075—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier working in avalanche mode, e.g. avalanche photodiodes in which the active layers, e.g. absorption or multiplication layers, form an heterostructure, e.g. SAM structure

Landscapes

Engineering & Computer Science (AREA)
Microelectronics & Electronic Packaging (AREA)
Power Engineering (AREA)
Physics & Mathematics (AREA)
Condensed Matter Physics & Semiconductors (AREA)
General Physics & Mathematics (AREA)
Computer Hardware Design (AREA)
Electromagnetism (AREA)
Ceramic Engineering (AREA)
Light Receiving Elements (AREA)

NL7920079A 1978-10-06 1979-09-21 Meerstraps-lawinefotodetector met geringe ruis. NL7920079A (nl)

Applications Claiming Priority (2)

Application Number	Priority Date	Filing Date	Title
US05/949,057 US4203124A (en)	1978-10-06	1978-10-06	Low noise multistage avalanche photodetector
US94905778		1978-10-06

Publications (1)

Publication Number	Publication Date
NL7920079A true NL7920079A (nl)	1980-08-29

Family

ID=25488536

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
NL7920079A NL7920079A (nl)	1978-10-06	1979-09-21	Meerstraps-lawinefotodetector met geringe ruis.

Country Status (12)

Country	Link
US (1)	US4203124A (fr)
JP (1)	JPS55500788A (fr)
AU (1)	AU522867B2 (fr)
BE (1)	BE879196A (fr)
CA (1)	CA1135823A (fr)
ES (1)	ES484787A1 (fr)
FR (1)	FR2438343A1 (fr)
GB (1)	GB2043346B (fr)
IT (1)	IT7968943A0 (fr)
NL (1)	NL7920079A (fr)
SE (1)	SE8004005L (fr)
WO (1)	WO1980000765A1 (fr)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US4250516A (en) *	1979-08-06	1981-02-10	Bell Telephone Laboratories, Incorporated	Multistage avalanche photodetector
US4383269A (en) *	1980-09-19	1983-05-10	Bell Telephone Laboratories, Incorporated	Graded bandgap photodetector
US4486765A (en) *	1981-12-07	1984-12-04	At&T Bell Laboratories	Avalanche photodetector including means for separating electrons and holes
US4476477A (en) *	1982-02-23	1984-10-09	At&T Bell Laboratories	Graded bandgap multilayer avalanche photodetector with energy step backs
US4599632A (en) *	1982-08-30	1986-07-08	At&T Bell Laboratories	Photodetector with graded bandgap region
US4794440A (en) *	1983-05-25	1988-12-27	American Telephone And Telegraph Company, At&T Bell Laboratories	Heterojunction bipolar transistor
US4620214A (en) *	1983-12-02	1986-10-28	California Institute Of Technology	Multiple quantum-well infrared detector
US4530752A (en) *	1984-06-20	1985-07-23	Union Oil Company Of California	Oil shale retorting process
JPH01183174A (ja) *	1988-01-18	1989-07-20	Fujitsu Ltd	半導体受光素子
US5121181A (en) *	1989-01-31	1992-06-09	International Business Machines Corporation	Resonant tunneling photodetector for long wavelength applications
US5959339A (en) *	1996-03-19	1999-09-28	Raytheon Company	Simultaneous two-wavelength p-n-p-n Infrared detector
US6870239B1 (en) *	2003-04-04	2005-03-22	Solid State Scientific Corporation	Avalanche photodiode having an extrinsic absorption region
US8279411B2 (en) *	2008-08-27	2012-10-02	The Boeing Company	Systems and methods for reducing crosstalk in an avalanche photodiode detector array
US9395182B1 (en)	2011-03-03	2016-07-19	The Boeing Company	Methods and systems for reducing crosstalk in avalanche photodiode detector arrays

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US2569347A (en) *	1948-06-26	1951-09-25	Bell Telephone Labor Inc	Circuit element utilizing semiconductive material
US3369132A (en) *	1962-11-14	1968-02-13	Ibm	Opto-electronic semiconductor devices
US3757174A (en) *	1972-07-31	1973-09-04	Sharp Kk	Light emitting four layer semiconductor
US3982261A (en) *	1972-09-22	1976-09-21	Varian Associates	Epitaxial indium-gallium-arsenide phosphide layer on lattice-matched indium-phosphide substrate and devices
US3928261A (en) *	1973-05-17	1975-12-23	Minnesota Mining & Mfg	Water removable film-forming compositions for topical application to skin
JPS5758075B2 (fr) *	1974-10-19	1982-12-08	Sony Corp
US4103312A (en) *	1977-06-09	1978-07-25	International Business Machines Corporation	Semiconductor memory devices
US4110778A (en) *	1977-06-21	1978-08-29	The United States Of America As Represented By The Secretary Of The Air Force	Narrow-band inverted homo-heterojunction avalanche photodiode

1978
- 1978-10-06 US US05/949,057 patent/US4203124A/en not_active Expired - Lifetime
1979
- 1979-09-13 CA CA000335545A patent/CA1135823A/fr not_active Expired
- 1979-09-21 JP JP50163979A patent/JPS55500788A/ja active Pending
- 1979-09-21 WO PCT/US1979/000749 patent/WO1980000765A1/fr unknown
- 1979-09-21 GB GB8016844A patent/GB2043346B/en not_active Expired
- 1979-09-21 NL NL7920079A patent/NL7920079A/nl not_active Application Discontinuation
- 1979-10-04 AU AU51478/79A patent/AU522867B2/en not_active Ceased
- 1979-10-04 BE BE0/197469A patent/BE879196A/fr not_active IP Right Cessation
- 1979-10-05 ES ES484787A patent/ES484787A1/es not_active Expired
- 1979-10-05 IT IT7968943A patent/IT7968943A0/it unknown
- 1979-10-05 FR FR7924886A patent/FR2438343A1/fr active Granted
1980
- 1980-05-29 SE SE8004005A patent/SE8004005L/ not_active Application Discontinuation

Also Published As

Publication number	Publication date
CA1135823A (fr)	1982-11-16
SE8004005L (sv)	1980-05-29
ES484787A1 (es)	1980-10-01
AU5147879A (en)	1980-04-17
FR2438343B1 (fr)	1981-05-29
IT7968943A0 (it)	1979-10-05
FR2438343A1 (fr)	1980-04-30
JPS55500788A (fr)	1980-10-16
GB2043346A (en)	1980-10-01
GB2043346B (en)	1982-05-06
US4203124A (en)	1980-05-13
AU522867B2 (en)	1982-07-01
BE879196A (fr)	1980-02-01
WO1980000765A1 (fr)	1980-04-17

Legal Events

Date	Code	Title
1981-06-01	BA	A request for search or an international-type search has been filed
1981-07-01	BB	A search report has been drawn up
1981-11-02	BC	A request for examination has been filed
1985-01-01	A85	Still pending on 85-01-01
1985-05-01	BV	The patent application has lapsed

Publication	Publication Date	Title
US5371399A (en)	1994-12-06	Compound semiconductor having metallic inclusions and devices fabricated therefrom
US10032950B2 (en)	2018-07-24	AllnAsSb avalanche photodiode and related method thereof
Ozbay et al.	2004	High-performance solar-blind photodetectors based on Al/sub x/Ga/sub 1-x/N heterostructures
US4353081A (en)	1982-10-05	Graded bandgap rectifying semiconductor devices
US4731641A (en)	1988-03-15	Avalanche photo diode with quantum well layer
NL7920079A (nl)	1980-08-29	Meerstraps-lawinefotodetector met geringe ruis.
US6326654B1 (en)	2001-12-04	Hybrid ultraviolet detector
Forrest et al.	1982	Performance of In 0.53 Ga 0.47 As/InP avalanche photodiodes
Lee	2018	Photodetectors
US4250516A (en)	1981-02-10	Multistage avalanche photodetector
US5459332A (en)	1995-10-17	Semiconductor photodetector device
WO2022157888A1 (fr)	2022-07-28	Photodiode à avalanche
US4473835A (en)	1984-09-25	Long wavelength avalanche photodetector
WO2019012276A1 (fr)	2019-01-17	Détecteur à photon unique
Rao et al.	1991	In0. 53Ga0. 47As metal‐semiconductor‐metal photodetector using proton bombarded p‐type material
Bandyopadhyay et al.	2001	Photodetectors for optical fiber communications
US4729004A (en)	1988-03-01	Semiconductor photo device
US4399448A (en)	1983-08-16	High sensitivity photon feedback photodetectors
JPH06302846A (ja)	1994-10-28	デルタドーピングされた半導体を利用した赤外線光検出器
Becla et al.	1992	Long wavelength HgMnTe avalanche photodiodes
Chan et al.	1995	High‐performance InP/Ga0. 47In0. 53As/InP metal‐semiconductor‐metal photodetectors with a strained Al0. 1In0. 9P barrier enhancement layer
Piotrowski et al.	1999	Optimisation of InGaAs infrared photovoltaic detectors
US20230299223A1 (en)	2023-09-21	Photodiode structures
JPS59151475A (ja)	1984-08-29	バツフア層付きヘテロ構造アバランシ・ホトダイオ−ド
Guo et al.	2023	Low-Noise InGaAs/AlInAsSb Avalanche Photodiodes on InP Substrates