Classifications

• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10B—ELECTRONIC MEMORY DEVICES
  • H10B20/00—Read-only memory [ROM] devices
  • H10B20/27—ROM only
  • H10B20/30—ROM only having the source region and the drain region on the same level, e.g. lateral transistors
  • H10B20/38—Doping programmed, e.g. mask ROM
  • H10B20/383—Channel doping programmed
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
  • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
  • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
  • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
  • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
  • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
  • H01L21/8232—Field-effect technology
  • H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
  • H01L21/8236—Combination of enhancement and depletion transistors
• • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
  • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
  • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
  • Y10S438/00—Semiconductor device manufacturing: process
  • Y10S438/958—Passivation layer

Landscapes

• Engineering & Computer Science (AREA)
• Physics & Mathematics (AREA)
• Condensed Matter Physics & Semiconductors (AREA)
• General Physics & Mathematics (AREA)
• Manufacturing & Machinery (AREA)
• Computer Hardware Design (AREA)
• Microelectronics & Electronic Packaging (AREA)
• Power Engineering (AREA)
• Semiconductor Memories (AREA)
• Solid State Image Pick-Up Elements (AREA)
• Read Only Memory (AREA)
• Non-Volatile Memory (AREA)

Applications Claiming Priority (1)

Publications (1)

Family

ID=25017581

Family Applications (1)

Country Status (8)

Families Citing this family (45)

Family Cites Families (9)

• 1976
  • 1976-12-14 US US05/750,368 patent/US4080718A/en not_active Expired - Lifetime
• 1977
  • 1977-10-11 CA CA288,419A patent/CA1111147A/en not_active Expired
  • 1977-11-07 GB GB33711/79A patent/GB1594958A/en not_active Expired
  • 1977-11-07 GB GB46245/77A patent/GB1594957A/en not_active Expired
  • 1977-11-10 DE DE2750209A patent/DE2750209C2/de not_active Expired
  • 1977-12-07 FR FR7736804A patent/FR2374739A1/fr active Granted
  • 1977-12-13 JP JP14894277A patent/JPS5375781A/ja active Granted
  • 1977-12-13 IT IT09653/77A patent/IT1089901B/it active
  • 1977-12-14 NL NL7713855A patent/NL7713855A/xx not_active Application Discontinuation

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