NL7709618A - Stralingsgevoelige halfgeleiderinrichting en werkwijze ter vervaardiging daarvan. - Google Patents

Stralingsgevoelige halfgeleiderinrichting en werkwijze ter vervaardiging daarvan.

Info

Publication number
NL7709618A
NL7709618A NL7709618A NL7709618A NL7709618A NL 7709618 A NL7709618 A NL 7709618A NL 7709618 A NL7709618 A NL 7709618A NL 7709618 A NL7709618 A NL 7709618A NL 7709618 A NL7709618 A NL 7709618A
Authority
NL
Netherlands
Prior art keywords
radiation
manufacturing
sensitive semiconductor
sensitive
semiconductor
Prior art date
Application number
NL7709618A
Other languages
English (en)
Original Assignee
Philips Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Nv filed Critical Philips Nv
Priority to NL7709618A priority Critical patent/NL7709618A/nl
Priority to DE7878200152T priority patent/DE2861768D1/de
Priority to EP19780200152 priority patent/EP0001139B1/en
Priority to CA000310003A priority patent/CA1121898A/en
Priority to AU39412/78A priority patent/AU520456B2/en
Priority to JP10571778A priority patent/JPS5449083A/ja
Publication of NL7709618A publication Critical patent/NL7709618A/nl
Priority to US06/179,865 priority patent/US4326211A/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
    • H01L31/107—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier working in avalanche mode, e.g. avalanche photodiodes

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Light Receiving Elements (AREA)
  • Measurement Of Radiation (AREA)
NL7709618A 1977-09-01 1977-09-01 Stralingsgevoelige halfgeleiderinrichting en werkwijze ter vervaardiging daarvan. NL7709618A (nl)

Priority Applications (7)

Application Number Priority Date Filing Date Title
NL7709618A NL7709618A (nl) 1977-09-01 1977-09-01 Stralingsgevoelige halfgeleiderinrichting en werkwijze ter vervaardiging daarvan.
DE7878200152T DE2861768D1 (en) 1977-09-01 1978-08-23 Radiation-sensitive avalanche diode and method of manufacturing same
EP19780200152 EP0001139B1 (en) 1977-09-01 1978-08-23 Radiation-sensitive avalanche diode and method of manufacturing same
CA000310003A CA1121898A (en) 1977-09-01 1978-08-24 Radiation-sensitive semiconductor device and method of manufacturing same
AU39412/78A AU520456B2 (en) 1977-09-01 1978-08-30 Avalanche diodf radiation detector
JP10571778A JPS5449083A (en) 1977-09-01 1978-08-31 Radiant ray detecting semiconductor and method of producing same
US06/179,865 US4326211A (en) 1977-09-01 1980-08-20 N+PP-PP-P+ Avalanche photodiode

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL7709618A NL7709618A (nl) 1977-09-01 1977-09-01 Stralingsgevoelige halfgeleiderinrichting en werkwijze ter vervaardiging daarvan.

Publications (1)

Publication Number Publication Date
NL7709618A true NL7709618A (nl) 1979-03-05

Family

ID=19829110

Family Applications (1)

Application Number Title Priority Date Filing Date
NL7709618A NL7709618A (nl) 1977-09-01 1977-09-01 Stralingsgevoelige halfgeleiderinrichting en werkwijze ter vervaardiging daarvan.

Country Status (6)

Country Link
EP (1) EP0001139B1 (nl)
JP (1) JPS5449083A (nl)
AU (1) AU520456B2 (nl)
CA (1) CA1121898A (nl)
DE (1) DE2861768D1 (nl)
NL (1) NL7709618A (nl)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01169144U (nl) * 1988-05-12 1989-11-29
GB8913198D0 (en) * 1989-06-08 1989-07-26 British Telecomm Guard ring structure
US5179431A (en) * 1989-11-20 1993-01-12 Fujitsu Limited Semiconductor photodetection device
JP2763352B2 (ja) * 1989-11-20 1998-06-11 富士通株式会社 半導体受光素子
DE102012103699A1 (de) * 2012-02-15 2013-08-22 First Sensor AG Halbleiterstruktur für einen Strahlungsdetektor sowie Strahlungsdetektor
FR3000610B1 (fr) * 2012-12-31 2015-03-06 Commissariat Energie Atomique Structure semiconductrice du type photodiode a avalanche a faible temps de reponse et procede de fabrication d'une telle photodiode
JP7169071B2 (ja) 2018-02-06 2022-11-10 ソニーセミコンダクタソリューションズ株式会社 画素構造、撮像素子、撮像装置、および電子機器
JP2019165181A (ja) * 2018-03-20 2019-09-26 株式会社東芝 光検出装置
CN115621352A (zh) * 2022-10-31 2023-01-17 武汉新芯集成电路制造有限公司 半导体器件及其制造方法

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5252593A (en) * 1975-10-27 1977-04-27 Nippon Telegr & Teleph Corp <Ntt> Semiconductor light receiving diode

Also Published As

Publication number Publication date
AU3941278A (en) 1980-03-06
JPS5754949B2 (nl) 1982-11-20
AU520456B2 (en) 1982-02-04
EP0001139A1 (en) 1979-03-21
DE2861768D1 (en) 1982-06-09
EP0001139B1 (en) 1982-04-28
CA1121898A (en) 1982-04-13
JPS5449083A (en) 1979-04-18

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Legal Events

Date Code Title Description
BV The patent application has lapsed