NL7611773A - Werkwijze ter vervaardiging van een halfgelei- derinrichting en halfgeleiderinrichting vervaar- digd door toepassing van een dergelijke werk- wijze. - Google Patents
Werkwijze ter vervaardiging van een halfgelei- derinrichting en halfgeleiderinrichting vervaar- digd door toepassing van een dergelijke werk- wijze.Info
- Publication number
- NL7611773A NL7611773A NL7611773A NL7611773A NL7611773A NL 7611773 A NL7611773 A NL 7611773A NL 7611773 A NL7611773 A NL 7611773A NL 7611773 A NL7611773 A NL 7611773A NL 7611773 A NL7611773 A NL 7611773A
- Authority
- NL
- Netherlands
- Prior art keywords
- semi
- manufacture
- applying
- guide device
- device manufactured
- Prior art date
Links
- 238000000034 method Methods 0.000 title 2
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/32—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers using masks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/74—Making of localized buried regions, e.g. buried collector layers, internal connections substrate contacts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/535—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including internal interconnections, e.g. cross-under constructions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Local Oxidation Of Silicon (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Priority Applications (11)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| NLAANVRAGE7611773,A NL185376C (nl) | 1976-10-25 | 1976-10-25 | Werkwijze ter vervaardiging van een halfgeleiderinrichting. |
| SE7614157A SE414980B (sv) | 1976-10-25 | 1976-12-16 | Sett att framstella en halvledaranordning |
| GB52770/76A GB1567197A (en) | 1976-10-25 | 1976-12-17 | Methods of manufacturing semiconductor devices |
| IT30842/76A IT1066832B (it) | 1976-10-25 | 1976-12-23 | Metodo per la fabbricazione di un dispositivo semiconduttore e dispositivo semiconduttore fabbricato con l'ausilio di tale metodo |
| AU20908/76A AU506465B2 (en) | 1976-10-25 | 1976-12-24 | Semiconductor F. E. T. device |
| US05/754,896 US4101344A (en) | 1976-10-25 | 1976-12-27 | Method of manufacturing a semiconductor device |
| CA269,266A CA1075372A (en) | 1976-10-25 | 1977-01-06 | Semiconductor device with underpass interconnection zone |
| JP6587377A JPS5353276A (en) | 1976-10-25 | 1977-06-06 | Method of producing semiconductor device |
| DE19772745857 DE2745857A1 (de) | 1976-10-25 | 1977-10-12 | Verfahren zur herstellung einer halbleiteranordnung |
| CH1285977A CH623959A5 (nl) | 1976-10-25 | 1977-10-21 | |
| FR7731904A FR2368799A1 (fr) | 1976-10-25 | 1977-10-24 | Dispositif semiconducteur et son procede de fabrication |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| NLAANVRAGE7611773,A NL185376C (nl) | 1976-10-25 | 1976-10-25 | Werkwijze ter vervaardiging van een halfgeleiderinrichting. |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| NL7611773A true NL7611773A (nl) | 1978-04-27 |
| NL185376B NL185376B (nl) | 1989-10-16 |
| NL185376C NL185376C (nl) | 1990-03-16 |
Family
ID=19827103
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| NLAANVRAGE7611773,A NL185376C (nl) | 1976-10-25 | 1976-10-25 | Werkwijze ter vervaardiging van een halfgeleiderinrichting. |
Country Status (11)
| Country | Link |
|---|---|
| US (1) | US4101344A (nl) |
| JP (1) | JPS5353276A (nl) |
| AU (1) | AU506465B2 (nl) |
| CA (1) | CA1075372A (nl) |
| CH (1) | CH623959A5 (nl) |
| DE (1) | DE2745857A1 (nl) |
| FR (1) | FR2368799A1 (nl) |
| GB (1) | GB1567197A (nl) |
| IT (1) | IT1066832B (nl) |
| NL (1) | NL185376C (nl) |
| SE (1) | SE414980B (nl) |
Families Citing this family (39)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7038290B1 (en) | 1965-09-28 | 2006-05-02 | Li Chou H | Integrated circuit device |
| US5696402A (en) * | 1965-09-28 | 1997-12-09 | Li; Chou H. | Integrated circuit device |
| US4244752A (en) * | 1979-03-06 | 1981-01-13 | Burroughs Corporation | Single mask method of fabricating complementary integrated circuits |
| US4288910A (en) * | 1979-04-16 | 1981-09-15 | Teletype Corporation | Method of manufacturing a semiconductor device |
| NL7903158A (nl) * | 1979-04-23 | 1980-10-27 | Philips Nv | Werkwijze voor het vervaardigen van een veldeffekt- transistor met geisoleerde poortelektrode, en transistor vervaardigd door toepassing van een derge- lijke werkwijze. |
| US4261761A (en) * | 1979-09-04 | 1981-04-14 | Tektronix, Inc. | Method of manufacturing sub-micron channel width MOS transistor |
| US4458262A (en) * | 1980-05-27 | 1984-07-03 | Supertex, Inc. | CMOS Device with ion-implanted channel-stop region and fabrication method therefor |
| NL8003612A (nl) * | 1980-06-23 | 1982-01-18 | Philips Nv | Werkwijze ter vervaardiging van een halfgeleider- inrichting en halfgeleiderinrichting vervaardigd door toepassing van deze werkwijze. |
| EP0052475A3 (en) * | 1980-11-19 | 1983-12-21 | Kabushiki Kaisha Toshiba | Semiconductor device and method for manufacturing the same |
| NL186886C (nl) * | 1980-11-28 | 1992-03-16 | Philips Nv | Halfgeleiderinrichting. |
| US4373965A (en) * | 1980-12-22 | 1983-02-15 | Ncr Corporation | Suppression of parasitic sidewall transistors in locos structures |
| US4511911A (en) * | 1981-07-22 | 1985-04-16 | International Business Machines Corporation | Dense dynamic memory cell structure and process |
| US4763177A (en) * | 1985-02-19 | 1988-08-09 | Texas Instruments Incorporated | Read only memory with improved channel length isolation and method of forming |
| GB2179787B (en) * | 1985-08-26 | 1989-09-20 | Intel Corp | Buried interconnect for mos structure |
| US4700461A (en) * | 1986-09-29 | 1987-10-20 | Massachusetts Institute Of Technology | Process for making junction field-effect transistors |
| US4874715A (en) * | 1987-05-20 | 1989-10-17 | Texas Instruments Incorporated | Read only memory with improved channel length control and method of forming |
| GB2215124A (en) * | 1988-02-16 | 1989-09-13 | Stc Plc | Integrated circuit underpasses |
| EP0940851B1 (en) | 1992-07-31 | 2005-10-05 | Hughes Electronics Corporation | Integrated circuit security system and method with implanted interconnections |
| US5927992A (en) * | 1993-12-22 | 1999-07-27 | Stmicroelectronics, Inc. | Method of forming a dielectric in an integrated circuit |
| US5811865A (en) * | 1993-12-22 | 1998-09-22 | Stmicroelectronics, Inc. | Dielectric in an integrated circuit |
| US5418176A (en) * | 1994-02-17 | 1995-05-23 | United Microelectronics Corporation | Process for producing memory devices having narrow buried N+ lines |
| JP3653107B2 (ja) * | 1994-03-14 | 2005-05-25 | 株式会社ルネサステクノロジ | 半導体装置およびその製造方法 |
| US5756385A (en) * | 1994-03-30 | 1998-05-26 | Sandisk Corporation | Dense flash EEPROM cell array and peripheral supporting circuits formed in deposited field oxide with the use of spacers |
| US5661053A (en) * | 1994-05-25 | 1997-08-26 | Sandisk Corporation | Method of making dense flash EEPROM cell array and peripheral supporting circuits formed in deposited field oxide with the use of spacers |
| US20040144999A1 (en) * | 1995-06-07 | 2004-07-29 | Li Chou H. | Integrated circuit device |
| US5767000A (en) * | 1996-06-05 | 1998-06-16 | Advanced Micro Devices, Inc. | Method of manufacturing subfield conductive layer |
| US5973375A (en) * | 1997-06-06 | 1999-10-26 | Hughes Electronics Corporation | Camouflaged circuit structure with step implants |
| US6391724B1 (en) * | 1999-12-24 | 2002-05-21 | Hyundai Electronics Industries Co., Ltd. | Method for manufacturing a gate structure incorporating aluminum oxide as a gate dielectric |
| US7217977B2 (en) * | 2004-04-19 | 2007-05-15 | Hrl Laboratories, Llc | Covert transformation of transistor properties as a circuit protection method |
| US6815816B1 (en) | 2000-10-25 | 2004-11-09 | Hrl Laboratories, Llc | Implanted hidden interconnections in a semiconductor device for preventing reverse engineering |
| US6740942B2 (en) | 2001-06-15 | 2004-05-25 | Hrl Laboratories, Llc. | Permanently on transistor implemented using a double polysilicon layer CMOS process with buried contact |
| US6774413B2 (en) | 2001-06-15 | 2004-08-10 | Hrl Laboratories, Llc | Integrated circuit structure with programmable connector/isolator |
| US6897535B2 (en) * | 2002-05-14 | 2005-05-24 | Hrl Laboratories, Llc | Integrated circuit with reverse engineering protection |
| US6979606B2 (en) | 2002-11-22 | 2005-12-27 | Hrl Laboratories, Llc | Use of silicon block process step to camouflage a false transistor |
| JP4846239B2 (ja) * | 2002-12-13 | 2011-12-28 | エイチアールエル ラボラトリーズ，エルエルシー | ウェル注入を用いた集積回路の改変 |
| US20050275058A1 (en) * | 2004-05-28 | 2005-12-15 | Leibiger Steven M | Method for enhancing field oxide and integrated circuit with enhanced field oxide |
| US7242063B1 (en) | 2004-06-29 | 2007-07-10 | Hrl Laboratories, Llc | Symmetric non-intrusive and covert technique to render a transistor permanently non-operable |
| US8421119B2 (en) * | 2006-09-13 | 2013-04-16 | Rohm Co., Ltd. | GaN related compound semiconductor element and process for producing the same and device having the same |
| US8168487B2 (en) | 2006-09-28 | 2012-05-01 | Hrl Laboratories, Llc | Programmable connection and isolation of active regions in an integrated circuit using ambiguous features to confuse a reverse engineer |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB1357515A (en) * | 1972-03-10 | 1974-06-26 | Matsushita Electronics Corp | Method for manufacturing an mos integrated circuit |
| US3747200A (en) * | 1972-03-31 | 1973-07-24 | Motorola Inc | Integrated circuit fabrication method |
| US3873372A (en) * | 1973-07-09 | 1975-03-25 | Ibm | Method for producing improved transistor devices |
| US4013489A (en) * | 1976-02-10 | 1977-03-22 | Intel Corporation | Process for forming a low resistance interconnect in MOS N-channel silicon gate integrated circuit |
| JPS52146578A (en) * | 1976-05-28 | 1977-12-06 | Texas Instruments Inc | Method of producing resistance element and semiconductor device having same element |
-
1976
- 1976-10-25 NL NLAANVRAGE7611773,A patent/NL185376C/nl not_active IP Right Cessation
- 1976-12-16 SE SE7614157A patent/SE414980B/xx not_active IP Right Cessation
- 1976-12-17 GB GB52770/76A patent/GB1567197A/en not_active Expired
- 1976-12-23 IT IT30842/76A patent/IT1066832B/it active
- 1976-12-24 AU AU20908/76A patent/AU506465B2/en not_active Expired
- 1976-12-27 US US05/754,896 patent/US4101344A/en not_active Expired - Lifetime
-
1977
- 1977-01-06 CA CA269,266A patent/CA1075372A/en not_active Expired
- 1977-06-06 JP JP6587377A patent/JPS5353276A/ja active Granted
- 1977-10-12 DE DE19772745857 patent/DE2745857A1/de active Granted
- 1977-10-21 CH CH1285977A patent/CH623959A5/de not_active IP Right Cessation
- 1977-10-24 FR FR7731904A patent/FR2368799A1/fr active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| NL185376B (nl) | 1989-10-16 |
| AU506465B2 (en) | 1980-01-03 |
| NL185376C (nl) | 1990-03-16 |
| GB1567197A (en) | 1980-05-14 |
| FR2368799A1 (fr) | 1978-05-19 |
| CH623959A5 (nl) | 1981-06-30 |
| SE414980B (sv) | 1980-08-25 |
| AU2090876A (en) | 1978-06-29 |
| SE7614157L (sv) | 1978-04-26 |
| JPS5353276A (en) | 1978-05-15 |
| CA1075372A (en) | 1980-04-08 |
| JPS6112382B2 (nl) | 1986-04-08 |
| US4101344A (en) | 1978-07-18 |
| DE2745857C2 (nl) | 1988-12-08 |
| FR2368799B1 (nl) | 1983-04-08 |
| IT1066832B (it) | 1985-03-12 |
| DE2745857A1 (de) | 1978-04-27 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| BC | A request for examination has been filed | ||
| A85 | Still pending on 85-01-01 | ||
| V1 | Lapsed because of non-payment of the annual fee |