NL7301042A - - Google Patents

Info

Publication number
NL7301042A
NL7301042A NL7301042A NL7301042A NL7301042A NL 7301042 A NL7301042 A NL 7301042A NL 7301042 A NL7301042 A NL 7301042A NL 7301042 A NL7301042 A NL 7301042A NL 7301042 A NL7301042 A NL 7301042A
Authority
NL
Netherlands
Application number
NL7301042A
Other versions
NL161921C (nl
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of NL7301042A publication Critical patent/NL7301042A/xx
Application granted granted Critical
Publication of NL161921C publication Critical patent/NL161921C/xx

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26Bombardment with radiation
    • H01L21/263Bombardment with radiation with high-energy radiation
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00Semiconductor device manufacturing: process
    • Y10S438/912Displacing pn junction
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00Semiconductor device manufacturing: process
    • Y10S438/914Doping
    • Y10S438/916Autodoping control or utilization

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Power Engineering (AREA)
  • Toxicology (AREA)
  • Health & Medical Sciences (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Recrystallisation Techniques (AREA)
NL7301042.A 1972-01-31 1973-01-25 Werkwijze ter vervaardiging van een halfgeleiderlichaam, omvattende een halfgeleideroppervlaktelaag, die is aan- gebracht op een hoger gedoteerd halfgeleidersubstraat- gebied en halfgeleiderlichaam, vervaardigd volgens de werkwijze. NL161921C (nl)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB451372*[A GB1420065A (en) 1972-01-31 1972-01-31 Methods of manufacturing semiconductor bodies

Publications (2)

Publication Number Publication Date
NL7301042A true NL7301042A (it) 1973-08-02
NL161921C NL161921C (nl) 1980-03-17

Family

ID=9778633

Family Applications (1)

Application Number Title Priority Date Filing Date
NL7301042.A NL161921C (nl) 1972-01-31 1973-01-25 Werkwijze ter vervaardiging van een halfgeleiderlichaam, omvattende een halfgeleideroppervlaktelaag, die is aan- gebracht op een hoger gedoteerd halfgeleidersubstraat- gebied en halfgeleiderlichaam, vervaardigd volgens de werkwijze.

Country Status (8)

Country Link
US (1) US3865633A (it)
JP (1) JPS5132528B2 (it)
CA (1) CA975470A (it)
DE (1) DE2301384C3 (it)
FR (1) FR2169976B1 (it)
GB (1) GB1420065A (it)
IT (1) IT976262B (it)
NL (1) NL161921C (it)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3982967A (en) * 1975-03-26 1976-09-28 Ibm Corporation Method of proton-enhanced diffusion for simultaneously forming integrated circuit regions of varying depths
US4133701A (en) * 1977-06-29 1979-01-09 General Motors Corporation Selective enhancement of phosphorus diffusion by implanting halogen ions
US4278475A (en) * 1979-01-04 1981-07-14 Westinghouse Electric Corp. Forming of contoured irradiated regions in materials such as semiconductor bodies by nuclear radiation
US4391651A (en) * 1981-10-15 1983-07-05 The United States Of America As Represented By The Secretary Of The Navy Method of forming a hyperabrupt interface in a GaAs substrate
US4837172A (en) * 1986-07-18 1989-06-06 Matsushita Electric Industrial Co., Ltd. Method for removing impurities existing in semiconductor substrate
JPH0650738B2 (ja) * 1990-01-11 1994-06-29 株式会社東芝 半導体装置及びその製造方法
US5508211A (en) * 1994-02-17 1996-04-16 Lsi Logic Corporation Method of making integrated circuit structure with vertical isolation from single crystal substrate comprising isolation layer formed by implantation and annealing of noble gas atoms in substrate
US11257671B2 (en) * 2018-09-28 2022-02-22 Taiwan Semiconductor Manufacturing Co., Ltd. Method and system of control of epitaxial growth

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3383567A (en) * 1965-09-15 1968-05-14 Ion Physics Corp Solid state translating device comprising irradiation implanted conductivity ions
US3515956A (en) * 1967-10-16 1970-06-02 Ion Physics Corp High-voltage semiconductor device having a guard ring containing substitutionally active ions in interstitial positions
US3718502A (en) * 1969-10-15 1973-02-27 J Gibbons Enhancement of diffusion of atoms into a heated substrate by bombardment
GB1307546A (en) * 1970-05-22 1973-02-21 Mullard Ltd Methods of manufacturing semiconductor devices
US3756862A (en) * 1971-12-21 1973-09-04 Ibm Proton enhanced diffusion methods

Also Published As

Publication number Publication date
DE2301384C3 (de) 1980-02-07
US3865633A (en) 1975-02-11
AU5146673A (en) 1974-08-01
FR2169976B1 (it) 1977-08-26
FR2169976A1 (it) 1973-09-14
DE2301384B2 (de) 1979-06-07
CA975470A (en) 1975-09-30
JPS5132528B2 (it) 1976-09-13
NL161921C (nl) 1980-03-17
IT976262B (it) 1974-08-20
GB1420065A (en) 1976-01-07
JPS4885077A (it) 1973-11-12
DE2301384A1 (de) 1973-08-09

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