IT976262B - Procedimento per la fabbricazione di corpi semiconduttori - Google Patents

Procedimento per la fabbricazione di corpi semiconduttori

Info

Publication number
IT976262B
IT976262B IT7271176A IT7117672A IT976262B IT 976262 B IT976262 B IT 976262B IT 7271176 A IT7271176 A IT 7271176A IT 7117672 A IT7117672 A IT 7117672A IT 976262 B IT976262 B IT 976262B
Authority
IT
Italy
Prior art keywords
procedure
manufacturing
semiconductor bodies
bodies
semiconductor
Prior art date
Application number
IT7271176A
Other languages
English (en)
Original Assignee
Philips Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Nv filed Critical Philips Nv
Application granted granted Critical
Publication of IT976262B publication Critical patent/IT976262B/it

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26Bombardment with radiation
    • H01L21/263Bombardment with radiation with high-energy radiation
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00Semiconductor device manufacturing: process
    • Y10S438/912Displacing pn junction
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00Semiconductor device manufacturing: process
    • Y10S438/914Doping
    • Y10S438/916Autodoping control or utilization

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Recrystallisation Techniques (AREA)
IT7271176A 1972-01-31 1972-12-29 Procedimento per la fabbricazione di corpi semiconduttori IT976262B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB451372*[A GB1420065A (en) 1972-01-31 1972-01-31 Methods of manufacturing semiconductor bodies

Publications (1)

Publication Number Publication Date
IT976262B true IT976262B (it) 1974-08-20

Family

ID=9778633

Family Applications (1)

Application Number Title Priority Date Filing Date
IT7271176A IT976262B (it) 1972-01-31 1972-12-29 Procedimento per la fabbricazione di corpi semiconduttori

Country Status (8)

Country Link
US (1) US3865633A (it)
JP (1) JPS5132528B2 (it)
CA (1) CA975470A (it)
DE (1) DE2301384C3 (it)
FR (1) FR2169976B1 (it)
GB (1) GB1420065A (it)
IT (1) IT976262B (it)
NL (1) NL161921C (it)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3982967A (en) * 1975-03-26 1976-09-28 Ibm Corporation Method of proton-enhanced diffusion for simultaneously forming integrated circuit regions of varying depths
US4133701A (en) * 1977-06-29 1979-01-09 General Motors Corporation Selective enhancement of phosphorus diffusion by implanting halogen ions
US4278475A (en) * 1979-01-04 1981-07-14 Westinghouse Electric Corp. Forming of contoured irradiated regions in materials such as semiconductor bodies by nuclear radiation
US4391651A (en) * 1981-10-15 1983-07-05 The United States Of America As Represented By The Secretary Of The Navy Method of forming a hyperabrupt interface in a GaAs substrate
US4837172A (en) * 1986-07-18 1989-06-06 Matsushita Electric Industrial Co., Ltd. Method for removing impurities existing in semiconductor substrate
JPH0650738B2 (ja) * 1990-01-11 1994-06-29 株式会社東芝 半導体装置及びその製造方法
US5508211A (en) * 1994-02-17 1996-04-16 Lsi Logic Corporation Method of making integrated circuit structure with vertical isolation from single crystal substrate comprising isolation layer formed by implantation and annealing of noble gas atoms in substrate
US11257671B2 (en) * 2018-09-28 2022-02-22 Taiwan Semiconductor Manufacturing Co., Ltd. Method and system of control of epitaxial growth

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3383567A (en) * 1965-09-15 1968-05-14 Ion Physics Corp Solid state translating device comprising irradiation implanted conductivity ions
US3515956A (en) * 1967-10-16 1970-06-02 Ion Physics Corp High-voltage semiconductor device having a guard ring containing substitutionally active ions in interstitial positions
US3718502A (en) * 1969-10-15 1973-02-27 J Gibbons Enhancement of diffusion of atoms into a heated substrate by bombardment
GB1307546A (en) * 1970-05-22 1973-02-21 Mullard Ltd Methods of manufacturing semiconductor devices
US3756862A (en) * 1971-12-21 1973-09-04 Ibm Proton enhanced diffusion methods

Also Published As

Publication number Publication date
US3865633A (en) 1975-02-11
DE2301384A1 (de) 1973-08-09
NL7301042A (it) 1973-08-02
JPS5132528B2 (it) 1976-09-13
FR2169976A1 (it) 1973-09-14
CA975470A (en) 1975-09-30
JPS4885077A (it) 1973-11-12
NL161921C (nl) 1980-03-17
DE2301384B2 (de) 1979-06-07
FR2169976B1 (it) 1977-08-26
DE2301384C3 (de) 1980-02-07
GB1420065A (en) 1976-01-07
AU5146673A (en) 1974-08-01

Similar Documents

Publication Publication Date Title
IT999751B (it) Procedimento per la produzione di poliolefine
IT1007685B (it) Procedimento per la produzione di dispositivi semiconduttori
IT975971B (it) Procedimento per la preparazione di clorosilani
IT1010166B (it) Metodo per la fabbricazione di dispositivi semiconduttori
IT998245B (it) Proccesso per la preparazione di novolacche
IT995276B (it) Procedimento per la produzione di fullulano
IT1020525B (it) Procedimento per la produzione di poliolefine
IT997911B (it) Procedimento per la produzione di etilbenzolo
IT976112B (it) Procedimento per la fabbricazione di dispositivi semiconduttori
IT995589B (it) Complesso di semiconduttori
IT976262B (it) Procedimento per la fabbricazione di corpi semiconduttori
IT987430B (it) Processo perfezionato per la fabbricazione di dispositivi semiconduttori
IT985415B (it) Procedimento per la produzione di urea
IT987426B (it) Procedimento perfezionato per la fabbricazione di dispositivi semi conduttori
IT994704B (it) Procedimento per la fabbricazione di un dispositivo comprendente un semiconduttore
IT998352B (it) Procedimento per la fabbricazione di imballaggi poveri d ossigeno
IT997708B (it) Procedimento per la produzione di terz butanolo
IT966758B (it) Procedimento per la manifattura di semiconduttori con esatta so vrapposizione di successive masche re di diffusione
IT999620B (it) Procedimento per la fabbricazione di materiali reprattari
IT980326B (it) Procedimento per la produzione di melammina
IT977792B (it) Procedimento per la preparazione di cianidrine
IT996099B (it) Procedimento di preparazione di amminoantrachinone
IT997554B (it) Procedimento per la produzione di 2 5 esandione
IT943836B (it) Procedimento per la fabbricazione di blocchetti di basamento per piante
IT996245B (it) Procedimento per la produzione di amminoantrachinoni