NL7208863A - - Google Patents
Info
- Publication number
- NL7208863A NL7208863A NL7208863A NL7208863A NL7208863A NL 7208863 A NL7208863 A NL 7208863A NL 7208863 A NL7208863 A NL 7208863A NL 7208863 A NL7208863 A NL 7208863A NL 7208863 A NL7208863 A NL 7208863A
- Authority
- NL
- Netherlands
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
- H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
- H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/04—Modifications for accelerating switching
- H03K17/041—Modifications for accelerating switching without feedback from the output circuit to the control circuit
- H03K17/04106—Modifications for accelerating switching without feedback from the output circuit to the control circuit in field-effect transistor switches
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/16—Modifications for eliminating interference voltages or currents
- H03K17/161—Modifications for eliminating interference voltages or currents in field-effect transistor switches
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
- H03K17/6871—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors the output circuit comprising more than one controlled field-effect transistor
- H03K17/6872—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors the output circuit comprising more than one controlled field-effect transistor using complementary field-effect transistors
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04J—MULTIPLEX COMMUNICATION
- H04J3/00—Time-division multiplex systems
- H04J3/02—Details
- H04J3/04—Distributors combined with modulators or demodulators
- H04J3/047—Distributors with transistors or integrated circuits
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Networks & Wireless Communication (AREA)
- Signal Processing (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Electronic Switches (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US15876171A | 1971-07-01 | 1971-07-01 |
Publications (3)
Publication Number | Publication Date |
---|---|
NL7208863A true NL7208863A (de) | 1973-01-03 |
NL178211B NL178211B (nl) | 1985-09-02 |
NL178211C NL178211C (nl) | 1986-02-03 |
Family
ID=22569590
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
NLAANVRAGE7208863,A NL178211C (nl) | 1971-07-01 | 1972-06-27 | Transmissiepoort. |
Country Status (4)
Country | Link |
---|---|
US (1) | US3720848A (de) |
JP (1) | JPS5230107B1 (de) |
DE (1) | DE2231933C3 (de) |
NL (1) | NL178211C (de) |
Families Citing this family (31)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3866064A (en) * | 1973-08-22 | 1975-02-11 | Harris Intertype Corp | Cmos analog switch |
US4001606A (en) * | 1974-06-05 | 1977-01-04 | Andrew Gordon Francis Dingwall | Electrical circuit |
US3955103A (en) * | 1975-02-12 | 1976-05-04 | National Semiconductor Corporation | Analog switch |
CA1045217A (en) * | 1976-02-10 | 1978-12-26 | Glenn A. Pollitt | Constant impedance mosfet switch |
DE2644401C2 (de) * | 1976-10-01 | 1978-08-24 | Standard Elektrik Lorenz Ag, 7000 Stuttgart | Elektronischer Schalter |
GB1549130A (en) * | 1977-06-01 | 1979-08-01 | Hughes Microelectronics Ltd Cm | Monolithic integrated circuit |
JPS5696279A (en) * | 1979-12-28 | 1981-08-04 | Nippon Soken Inc | Braking time metering device |
DE3226339C2 (de) * | 1981-07-17 | 1985-12-19 | Tokyo Shibaura Denki K.K., Kawasaki, Kanagawa | Analoge Schaltervorrichtung mit MOS-Transistoren |
JPS5894232A (ja) * | 1981-11-30 | 1983-06-04 | Toshiba Corp | 半導体アナログスイッチ回路 |
US4473761A (en) * | 1982-04-23 | 1984-09-25 | Motorola, Inc. | Solid state transmission gate |
JPS5994923A (ja) * | 1982-11-22 | 1984-05-31 | Toshiba Corp | アナログ・スイツチ回路 |
US4544854A (en) * | 1983-08-04 | 1985-10-01 | Motorola, Inc. | Analog switch structure having low leakage current |
US4631474A (en) * | 1984-07-11 | 1986-12-23 | The United States Of America As Represented By The Secretary Of The Air Force | High or low-side state relay with current limiting and operational testing |
JPS6295016A (ja) * | 1985-10-21 | 1987-05-01 | Mitsubishi Electric Corp | ラツチ回路 |
JPH0789674B2 (ja) * | 1985-10-22 | 1995-09-27 | シ−メンス、アクチエンゲゼルシヤフト | 広帯域信号−結合装置 |
US4716319A (en) * | 1986-08-04 | 1987-12-29 | Motorola, Inc. | Switched capacitor filter for low voltage applications |
JPH01144667A (ja) * | 1987-11-30 | 1989-06-06 | Toshiba Corp | 基板電位検出回路 |
US4877980A (en) * | 1988-03-10 | 1989-10-31 | Advanced Micro Devices, Inc. | Time variant drive circuit for high speed bus driver to limit oscillations or ringing on a bus |
JPH02275989A (ja) * | 1990-03-26 | 1990-11-09 | Hitachi Ltd | 液晶マトリクス表示装置 |
US5144154A (en) * | 1990-05-21 | 1992-09-01 | Keithley Instruments, Inc. | Range changing using N and P channel FETS |
US5191244A (en) * | 1991-09-16 | 1993-03-02 | Advanced Micro Devices, Inc. | N-channel pull-up transistor with reduced body effect |
JPH06208423A (ja) * | 1993-01-12 | 1994-07-26 | Mitsubishi Electric Corp | 電源回路 |
JP2888722B2 (ja) * | 1993-04-12 | 1999-05-10 | 株式会社東芝 | インターフェース回路 |
US5818099A (en) * | 1996-10-03 | 1998-10-06 | International Business Machines Corporation | MOS high frequency switch circuit using a variable well bias |
JP3239867B2 (ja) * | 1998-12-17 | 2001-12-17 | 日本電気株式会社 | 半導体装置 |
US6215337B1 (en) * | 1999-01-12 | 2001-04-10 | Qualcomm Incorporated | Linear sampling switch |
JP4487726B2 (ja) * | 2004-10-28 | 2010-06-23 | 株式会社デンソー | アナログスイッチおよびスイッチトキャパシタフィルタ |
US8786371B2 (en) | 2011-11-18 | 2014-07-22 | Skyworks Solutions, Inc. | Apparatus and methods for voltage converters |
US8933746B1 (en) * | 2013-07-10 | 2015-01-13 | Astronics Advanced Electronic Systems Corp. | Parallel FET solid state relay utilizing commutation FETs |
US20150381160A1 (en) * | 2014-06-26 | 2015-12-31 | Infineon Technologies Ag | Robust multiplexer, and method for operating a robust multiplexer |
RU2738346C1 (ru) * | 2020-02-11 | 2020-12-11 | Федеральное государственное унитарное предприятие "Научно-производственный центр автоматики и приборостроения имени академика Н.А. Пилюгина" (ФГУП "НПЦАП") | Коммутатор двухполярного источника эталонного напряжения с температурной компенсацией |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL301883A (de) * | 1962-12-17 | |||
US3390314A (en) * | 1964-10-30 | 1968-06-25 | Rca Corp | Semiconductor translating circuit |
US3406298A (en) * | 1965-02-03 | 1968-10-15 | Ibm | Integrated igfet logic circuit with linear resistive load |
US3512012A (en) * | 1965-11-16 | 1970-05-12 | United Aircraft Corp | Field effect transistor circuit |
US3457435A (en) * | 1965-12-21 | 1969-07-22 | Rca Corp | Complementary field-effect transistor transmission gate |
US3444397A (en) * | 1966-07-21 | 1969-05-13 | Hughes Aircraft Co | Voltage adjustable breakdown diode employing metal oxide silicon field effect transistor |
US3466511A (en) * | 1967-05-05 | 1969-09-09 | Westinghouse Electric Corp | Insulated gate field effect transistors with means preventing overvoltage feedthrough by auxiliary structure providing bipolar transistor action through substrate |
US3609414A (en) * | 1968-08-20 | 1971-09-28 | Ibm | Apparatus for stabilizing field effect transistor thresholds |
US3588540A (en) * | 1969-12-12 | 1971-06-28 | Northern Electric Co | Adjustable relay |
US3621286A (en) * | 1970-03-09 | 1971-11-16 | Eugene C Varrasso | Memory unit providing output over longer time periods than duration of individual input signals |
-
1971
- 1971-07-01 US US00158761A patent/US3720848A/en not_active Expired - Lifetime
-
1972
- 1972-06-27 NL NLAANVRAGE7208863,A patent/NL178211C/xx not_active IP Right Cessation
- 1972-06-29 JP JP47064530A patent/JPS5230107B1/ja active Pending
- 1972-06-29 DE DE2231933A patent/DE2231933C3/de not_active Expired
Also Published As
Publication number | Publication date |
---|---|
DE2231933B2 (de) | 1978-10-05 |
DE2231933A1 (de) | 1973-01-18 |
JPS5230107B1 (de) | 1977-08-05 |
NL178211B (nl) | 1985-09-02 |
DE2231933C3 (de) | 1979-05-31 |
NL178211C (nl) | 1986-02-03 |
US3720848A (en) | 1973-03-13 |
Similar Documents
Legal Events
Date | Code | Title | Description |
---|---|---|---|
BC | A request for examination has been filed | ||
A85 | Still pending on 85-01-01 | ||
V4 | Lapsed because of reaching the maximum lifetime of a patent |