NL243511A - - Google Patents
Info
- Publication number
- NL243511A NL243511A NL243511DA NL243511A NL 243511 A NL243511 A NL 243511A NL 243511D A NL243511D A NL 243511DA NL 243511 A NL243511 A NL 243511A
- Authority
- NL
- Netherlands
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
- C30B13/34—Single-crystal growth by zone-melting; Refining by zone-melting characterised by the seed, e.g. by its crystallographic orientation
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
- C30B11/14—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method characterised by the seed, e.g. its crystallographic orientation
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/10—Crucibles or containers for supporting the melt
- C30B15/12—Double crucible methods
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/36—Single-crystal growth by pulling from a melt, e.g. Czochralski method characterised by the seed, e.g. its crystallographic orientation
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10S117/901—Levitation, reduced gravity, microgravity, space
- Y10S117/902—Specified orientation, shape, crystallography, or size of seed or substrate
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
NL243511 | 1959-09-18 |
Publications (1)
Publication Number | Publication Date |
---|---|
NL243511A true NL243511A (xx) |
Family
ID=19751930
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
NL243511D NL243511A (xx) | 1959-09-18 | ||
NL104644D NL104644C (xx) | 1959-09-18 |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
NL104644D NL104644C (xx) | 1959-09-18 |
Country Status (4)
Country | Link |
---|---|
US (1) | US3194691A (xx) |
DE (1) | DE1256202B (xx) |
GB (1) | GB931992A (xx) |
NL (2) | NL104644C (xx) |
Families Citing this family (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL295683A (xx) * | 1962-07-24 | |||
GB1060474A (en) * | 1963-03-27 | 1967-03-01 | Siemens Ag | The production of monocrystalline semiconductor bodies of silicon or germanium |
DE1251721B (de) * | 1963-10-28 | 1967-10-12 | Siemens Aktiengesellschaft, Berlin und München München | Verfahren zum Herstellen von Halbleiteiknstallen vorzugsweise Halbleiteremknstallen mit einstellbarer, beispielsweise konstanter Fremdstoffkonzentration |
US3329884A (en) * | 1964-06-08 | 1967-07-04 | Bell Telephone Labor Inc | Frequency multiplier utilizing a hybrid junction to provide isolation between the input and output terminals |
DE1619994B2 (de) * | 1967-03-09 | 1976-07-15 | Siemens AG, 1000 Berlin und 8000 München | Verfahren zum zuechten eines stabfoermigen, versetzungsfreien einkristalls aus silicium durch tiegelfreies zonenschmelzen |
NL171309C (nl) * | 1970-03-02 | 1983-03-01 | Hitachi Ltd | Werkwijze voor de vervaardiging van een halfgeleiderlichaam, waarbij een laag van siliciumdioxyde wordt gevormd op een oppervlak van een monokristallijn lichaam van silicium. |
US3776703A (en) * | 1970-11-30 | 1973-12-04 | Texas Instruments Inc | Method of growing 1-0-0 orientation high perfection single crystal silicon by adjusting a focus coil |
IT943198B (it) * | 1970-12-11 | 1973-04-02 | Philips Nv | Procedimento per la fabbricazione di monocristalli semiconduttori |
JPS5027480B1 (xx) * | 1971-07-28 | 1975-09-08 | ||
DE2234512C3 (de) * | 1972-07-13 | 1979-04-19 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | Verfahren zum Herstellen von (Umorientierten Halbleitereinkristallstäben mit zur Stabmitte abtauendem spezifischem Widerstand |
JPS6379790A (ja) * | 1986-09-22 | 1988-04-09 | Toshiba Corp | 結晶引上げ装置 |
US5069743A (en) * | 1990-04-11 | 1991-12-03 | Hughes Aircraft Company | Orientation control of float-zone grown TiC crystals |
JPH042683A (ja) * | 1990-04-16 | 1992-01-07 | Chichibu Cement Co Ltd | ルチル単結晶の製造方法 |
DE4323793A1 (de) * | 1993-07-15 | 1995-01-19 | Wacker Chemitronic | Verfahren zur Herstellung von Stäben oder Blöcken aus beim Erstarren sich ausdehnendem Halbleitermaterial durch Kristallisieren einer aus Granulat erzeugten Schmelze sowie Vorrichtung zu seiner Durchführung |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2651831A (en) * | 1950-07-24 | 1953-09-15 | Bell Telephone Labor Inc | Semiconductor translating device |
US3018539A (en) * | 1956-11-06 | 1962-01-30 | Motorola Inc | Diffused base transistor and method of making same |
US2981875A (en) * | 1957-10-07 | 1961-04-25 | Motorola Inc | Semiconductor device and method of making the same |
-
0
- NL NL243511D patent/NL243511A/xx unknown
- NL NL104644D patent/NL104644C/xx active
-
1960
- 1960-09-02 US US53692A patent/US3194691A/en not_active Expired - Lifetime
- 1960-09-14 DE DEN18903A patent/DE1256202B/de active Pending
- 1960-09-15 GB GB31807/60A patent/GB931992A/en not_active Expired
Also Published As
Publication number | Publication date |
---|---|
NL104644C (xx) | |
DE1256202B (de) | 1967-12-14 |
US3194691A (en) | 1965-07-13 |
GB931992A (en) | 1963-07-24 |