NL2002998A1 - Lithographic apparatus. - Google Patents

Lithographic apparatus. Download PDF

Info

Publication number
NL2002998A1
NL2002998A1 NL2002998A NL2002998A NL2002998A1 NL 2002998 A1 NL2002998 A1 NL 2002998A1 NL 2002998 A NL2002998 A NL 2002998A NL 2002998 A NL2002998 A NL 2002998A NL 2002998 A1 NL2002998 A1 NL 2002998A1
Authority
NL
Netherlands
Prior art keywords
radiation beam
substrate
sensor
lithographic apparatus
front side
Prior art date
Application number
NL2002998A
Other languages
English (en)
Inventor
Vitaliy Prosyentsov
Sanjaysingh Lalbahadoersing
Sami Musa
Hyun-Woo Lee
Original Assignee
Asml Netherlands Bv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Asml Netherlands Bv filed Critical Asml Netherlands Bv
Publication of NL2002998A1 publication Critical patent/NL2002998A1/nl

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03B—APPARATUS OR ARRANGEMENTS FOR TAKING PHOTOGRAPHS OR FOR PROJECTING OR VIEWING THEM; APPARATUS OR ARRANGEMENTS EMPLOYING ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ACCESSORIES THEREFOR
    • G03B27/00—Photographic printing apparatus
    • G03B27/32—Projection printing apparatus, e.g. enlarger, copying camera
    • G03B27/52—Details
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70341—Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/707—Chucks, e.g. chucking or un-chucking operations or structural details
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70716—Stages
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/7085—Detection arrangement, e.g. detectors of apparatus alignment possibly mounted on wafers, exposure dose, photo-cleaning flux, stray light, thermal load

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Environmental & Geological Engineering (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
NL2002998A 2008-06-18 2009-06-11 Lithographic apparatus. NL2002998A1 (nl)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US12931508P 2008-06-18 2008-06-18
US10246708P 2008-10-03 2008-10-03

Publications (1)

Publication Number Publication Date
NL2002998A1 true NL2002998A1 (nl) 2009-12-22

Family

ID=41430884

Family Applications (1)

Application Number Title Priority Date Filing Date
NL2002998A NL2002998A1 (nl) 2008-06-18 2009-06-11 Lithographic apparatus.

Country Status (6)

Country Link
US (1) US8243259B2 (nl)
JP (1) JP5066140B2 (nl)
KR (1) KR101149841B1 (nl)
CN (1) CN101609267B (nl)
NL (1) NL2002998A1 (nl)
TW (1) TWI411896B (nl)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5477862B2 (ja) * 2010-09-06 2014-04-23 株式会社ブイ・テクノロジー フィルム露光装置及びフィルム露光方法
WO2014068116A1 (en) 2012-11-05 2014-05-08 Asml Netherlands B.V. Method and apparatus for measuring asymmetry of a microstructure, position measuring method, position measuring apparatus, lithographic apparatus and device manufacturing method
JP6207671B1 (ja) * 2016-06-01 2017-10-04 キヤノン株式会社 パターン形成装置、基板配置方法及び物品の製造方法
CN110753861A (zh) * 2017-06-19 2020-02-04 奇跃公司 动态可致动衍射光学元件
WO2020212196A1 (en) * 2019-04-16 2020-10-22 Asml Netherlands B.V. Image sensor for immersion lithography
US11275312B1 (en) 2020-11-30 2022-03-15 Waymo Llc Systems and methods for verifying photomask cleanliness

Family Cites Families (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4509852A (en) * 1980-10-06 1985-04-09 Werner Tabarelli Apparatus for the photolithographic manufacture of integrated circuit elements
JPS587823A (ja) * 1981-07-06 1983-01-17 Hitachi Ltd アライメント方法およびその装置
JPH0437113A (ja) * 1990-06-01 1992-02-07 Mitsubishi Electric Corp 縮小投影露光装置
WO1998039689A1 (en) * 1997-03-07 1998-09-11 Asm Lithography B.V. Lithographic projection apparatus with off-axis alignment unit
US20020041377A1 (en) * 2000-04-25 2002-04-11 Nikon Corporation Aerial image measurement method and unit, optical properties measurement method and unit, adjustment method of projection optical system, exposure method and apparatus, making method of exposure apparatus, and device manufacturing method
JP2002014005A (ja) * 2000-04-25 2002-01-18 Nikon Corp 空間像計測方法、結像特性計測方法、空間像計測装置及び露光装置
JP4579376B2 (ja) * 2000-06-19 2010-11-10 キヤノン株式会社 露光装置およびデバイス製造方法
JP2002140005A (ja) 2000-10-31 2002-05-17 Yoshino Kogyosho Co Ltd ロール型タックラベルとその製造方法及びタックラベルを貼着したプラスチック製品
US7113258B2 (en) * 2001-01-15 2006-09-26 Asml Netherlands B.V. Lithographic apparatus
TW201738932A (zh) * 2003-10-09 2017-11-01 Nippon Kogaku Kk 曝光裝置及曝光方法、元件製造方法
JP4524601B2 (ja) * 2003-10-09 2010-08-18 株式会社ニコン 露光装置及び露光方法、デバイス製造方法
JP4018647B2 (ja) * 2004-02-09 2007-12-05 キヤノン株式会社 投影露光装置およびデバイス製造方法
US7463330B2 (en) * 2004-07-07 2008-12-09 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7333175B2 (en) * 2004-09-13 2008-02-19 Asml Netherlands, B.V. Method and system for aligning a first and second marker
WO2006040890A1 (ja) * 2004-10-08 2006-04-20 Nikon Corporation 露光装置及びデバイス製造方法
US7652746B2 (en) * 2005-06-21 2010-01-26 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
JP2007103658A (ja) * 2005-10-04 2007-04-19 Canon Inc 露光方法および装置ならびにデバイス製造方法
US20080062385A1 (en) * 2006-04-07 2008-03-13 Asml Netherlands B.V. Method of monitoring polarization performance, polarization measurement assembly, lithographic apparatus and computer program product using the same
JP2007329289A (ja) * 2006-06-07 2007-12-20 Canon Inc 光学部品の製造方法
JP2008066572A (ja) * 2006-09-08 2008-03-21 Canon Inc マーク基板、マーク基板の製造方法、液浸露光装置およびデバイス製造方法
CN100535761C (zh) * 2007-10-11 2009-09-02 上海微电子装备有限公司 光刻装置的传感器
EP2264528A1 (en) * 2009-06-19 2010-12-22 ASML Netherlands B.V. Sensor and lithographic apparatus

Also Published As

Publication number Publication date
JP2010004040A (ja) 2010-01-07
TWI411896B (zh) 2013-10-11
US8243259B2 (en) 2012-08-14
JP5066140B2 (ja) 2012-11-07
KR20090131662A (ko) 2009-12-29
CN101609267A (zh) 2009-12-23
TW201007390A (en) 2010-02-16
US20090316122A1 (en) 2009-12-24
CN101609267B (zh) 2012-01-11
KR101149841B1 (ko) 2012-05-24

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Legal Events

Date Code Title Description
AD1A A request for search or an international type search has been filed
WDAP Patent application withdrawn

Effective date: 20101118