NL194383B - - Google Patents

Info

Publication number: NL194383B
Authority: NL; Netherlands

Application number

NL9201779A

Other versions

NL194383C (en

NL9201779A (en

Inventor

Daisuke Shichinohe

Original Assignee

Mitsubishi Electric Corp

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1991-10-14

Filing date

1992-10-13

Publication date

2001-10-01

1992-10-13 Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp

1993-05-03 Publication of NL9201779A publication Critical patent/NL9201779A/en

2001-10-01 Publication of NL194383B publication Critical patent/NL194383B/xx

2002-02-04 Application granted granted Critical

2002-02-04 Publication of NL194383C publication Critical patent/NL194383C/nl

Links

Classifications

- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
- H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
- H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
- H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
- H03K19/003—Modifications for increasing the reliability for protection
- H03K19/00346—Modifications for eliminating interference or parasitic voltages or currents
- H03K19/00361—Modifications for eliminating interference or parasitic voltages or currents in field effect transistor circuits

Landscapes

Engineering & Computer Science (AREA)
Power Engineering (AREA)
Computer Hardware Design (AREA)
Physics & Mathematics (AREA)
Microelectronics & Electronic Packaging (AREA)
Condensed Matter Physics & Semiconductors (AREA)
General Physics & Mathematics (AREA)
Mathematical Physics (AREA)
General Engineering & Computer Science (AREA)
Computing Systems (AREA)
Logic Circuits (AREA)
Static Random-Access Memory (AREA)
Semiconductor Integrated Circuits (AREA)
Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Electronic Switches (AREA)

NL9201779A 1991-10-14 1992-10-13 METHOD AND APPARATUS FOR A HIGH-SPEED OUTPUT BODY. NL9201779A (en)

Applications Claiming Priority (2)

Application Number	Priority Date	Filing Date	Title
JP3264635A JP2670651B2 (en)	1991-10-14	1991-10-14	Output device
JP26463591		1991-10-14

Publications (3)

Publication Number	Publication Date
NL9201779A NL9201779A (en)	1993-05-03
NL194383B true NL194383B (en)	2001-10-01
NL194383C NL194383C (en)	2002-02-04

Family

ID=17406091

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
NL9201779A NL9201779A (en)	1991-10-14	1992-10-13	METHOD AND APPARATUS FOR A HIGH-SPEED OUTPUT BODY.

Country Status (3)

Country	Link
US (1)	US5343099A (en)
JP (1)	JP2670651B2 (en)
NL (1)	NL9201779A (en)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
KR100261962B1 (en) *	1993-12-31	2000-07-15	김영환	Data output buffer
US5418476A (en) *	1994-07-28	1995-05-23	At&T Corp.	Low voltage output buffer with improved speed
JP3229164B2 (en) *	1994-07-28	2001-11-12	インターナショナル・ビジネス・マシーンズ・コーポレーション	Latch circuit
US5892383A (en) *	1995-06-13	1999-04-06	Intel Corporation	Parallel voltage controlled resistance elements
TW372101U (en) *	1996-10-11	1999-10-11	United Microelectronics Corp	Input buffer
US6100743A (en) *	1998-08-25	2000-08-08	Lucent Technologies Inc.	Circuit arrangement for adding functionality to a circuit with reduced propagation delays
JP3950120B2 (en) *	2004-03-31	2007-07-25	株式会社東芝	Driver circuit and system having driver circuit
US7518424B2 (en) *	2004-11-08	2009-04-14	Elite Semiconductor Memory Technology Inc.	Slew rate controlled output circuit
JP2008219249A (en) *	2007-03-01	2008-09-18	Nec Corp	Cmos circuit

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
DE1938468C3 (en) *	1969-07-29	1974-04-25	Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt	Dynamic circuit arrangement
JPS5696532A (en) *	1979-12-29	1981-08-04	Citizen Watch Co Ltd	Frequency divider
JPS5772429A (en) *	1980-10-22	1982-05-06	Toshiba Corp	Semiconductor integrated circuit device
JPS61292412A (en) *	1985-06-20	1986-12-23	Fujitsu Ltd	Output circuit
US4736117A (en) *	1986-11-14	1988-04-05	National Semiconductor Corporation	VDS clamp for limiting impact ionization in high density CMOS devices
JPH01305616A (en) *	1988-06-02	1989-12-08	Toshiba Corp	Output circuit for semiconductor integrated circuit
JPH02162824A (en) *	1988-12-16	1990-06-22	Hitachi Ltd	Semiconductor integrated circuit device
US5089728A (en) *	1989-09-06	1992-02-18	National Semiconductor Corporation	Spike current reduction in cmos switch drivers
JPH0793565B2 (en) *	1989-11-09	1995-10-09	日本電気株式会社	Level conversion circuit
JPH03217118A (en) *	1990-01-23	1991-09-24	Matsushita Electric Ind Co Ltd	Logical amplifier
JPH04114511A (en) *	1990-09-05	1992-04-15	Nec Corp	Cmos inverter

1991
- 1991-10-14 JP JP3264635A patent/JP2670651B2/en not_active Expired - Fee Related
1992
- 1992-10-13 NL NL9201779A patent/NL9201779A/en not_active IP Right Cessation
- 1992-10-13 US US07/959,910 patent/US5343099A/en not_active Expired - Fee Related

Also Published As

Publication number	Publication date
NL194383C (en)	2002-02-04
NL9201779A (en)	1993-05-03
JPH05110402A (en)	1993-04-30
JP2670651B2 (en)	1997-10-29
US5343099A (en)	1994-08-30

Legal Events

Date	Code	Title	Description
1993-05-03	A1A	A request for search or an international-type search has been filed
1994-08-01	BB	A search report has been drawn up
1994-10-03	BC	A request for examination has been filed
2004-07-01	V1	Lapsed because of non-payment of the annual fee	Effective date: 20040501

Publication	Publication Date	Title
EP0507403A3 (en)	1995-04-26
DE4291263T1 (en)	1993-06-03
EP0520216A3 (en)	1995-06-07
EP0531539A4 (en)	1995-04-05
DE4193446T1 (en)	1993-04-01
EP0543296A3 (en)	1995-07-12
FR2672239B1 (en)	1995-04-14
EP0543016A4 (en)	1995-04-19
JPH0499508U (en)	1992-08-27
ECSM91555U (en)	1992-03-18
EP0533158A3 (en)	1994-12-28
EP0539211A3 (en)	1994-03-16
EP0514972A3 (en)	1994-02-16
EP0518088A3 (en)	1994-03-23
EP0518668A3 (en)	1994-01-05
EP0519631A3 (en)	1994-12-28
EP0502742A3 (en)	1995-02-01
EP0520400A3 (en)	1995-02-22
EP0522997A3 (en)	1994-01-12
EP0560985A4 (en)	1994-02-02
EP0524763A3 (en)	1994-02-16
EP0525386A3 (en)	1995-01-04
EP0531047A3 (en)	1994-04-27
EP0500121A3 (en)	1994-02-23
EP0554461A4 (en)	1994-02-16