NL187942C - Zenerdiode en werkwijze ter vervaardiging daarvan. - Google Patents
Zenerdiode en werkwijze ter vervaardiging daarvan.Info
- Publication number
- NL187942C NL187942C NLAANVRAGE8004651,A NL8004651A NL187942C NL 187942 C NL187942 C NL 187942C NL 8004651 A NL8004651 A NL 8004651A NL 187942 C NL187942 C NL 187942C
- Authority
- NL
- Netherlands
- Prior art keywords
- zenerdiode
- manufacture
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/866—Zener diodes
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Electrodes Of Semiconductors (AREA)
- Semiconductor Integrated Circuits (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Priority Applications (7)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
NLAANVRAGE8004651,A NL187942C (nl) | 1980-08-18 | 1980-08-18 | Zenerdiode en werkwijze ter vervaardiging daarvan. |
US06/284,436 US4429324A (en) | 1980-08-18 | 1981-07-20 | Zener diode and method of making the same |
DE3131991A DE3131991C2 (de) | 1980-08-18 | 1981-08-13 | Verfahren zum Herstellen einer Zenerdiode |
GB8124868A GB2082386B (en) | 1980-08-18 | 1981-08-14 | Zener diodes and their manufacture |
IT23532/81A IT1139373B (it) | 1980-08-18 | 1981-08-14 | Diodo zener e metodo di fabbricazione dello stesso |
JP56128656A JPS5771186A (en) | 1980-08-18 | 1981-08-17 | Zener diode and method of producing same |
FR8115820A FR2488734B1 (fr) | 1980-08-18 | 1981-08-17 | Diode zener et procede pour la fabriquer |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
NL8004651 | 1980-08-18 | ||
NLAANVRAGE8004651,A NL187942C (nl) | 1980-08-18 | 1980-08-18 | Zenerdiode en werkwijze ter vervaardiging daarvan. |
Publications (3)
Publication Number | Publication Date |
---|---|
NL8004651A NL8004651A (nl) | 1982-03-16 |
NL187942B NL187942B (nl) | 1991-09-16 |
NL187942C true NL187942C (nl) | 1992-02-17 |
Family
ID=19835744
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
NLAANVRAGE8004651,A NL187942C (nl) | 1980-08-18 | 1980-08-18 | Zenerdiode en werkwijze ter vervaardiging daarvan. |
Country Status (7)
Country | Link |
---|---|
US (1) | US4429324A (de) |
JP (1) | JPS5771186A (de) |
DE (1) | DE3131991C2 (de) |
FR (1) | FR2488734B1 (de) |
GB (1) | GB2082386B (de) |
IT (1) | IT1139373B (de) |
NL (1) | NL187942C (de) |
Families Citing this family (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4651178A (en) * | 1985-05-31 | 1987-03-17 | Rca Corporation | Dual inverse zener diode with buried junctions |
US4631562A (en) * | 1985-05-31 | 1986-12-23 | Rca Corporation | Zener diode structure |
JP2561104B2 (ja) * | 1987-12-11 | 1996-12-04 | 富士通株式会社 | 半導体基板の湿式処理装置 |
JPH0642555B2 (ja) * | 1989-06-20 | 1994-06-01 | 株式会社東芝 | 半導体装置 |
DE4130247A1 (de) * | 1991-09-12 | 1993-03-18 | Bosch Gmbh Robert | Halbleiteranordnung und verfahren zu deren herstellung |
DE69228046T2 (de) * | 1991-12-16 | 1999-07-01 | Koninklijke Philips Electronics N.V., Eindhoven | Zener-Diode mit Bezugs- und Schutzdiode |
US7166528B2 (en) * | 2003-10-10 | 2007-01-23 | Applied Materials, Inc. | Methods of selective deposition of heavily doped epitaxial SiGe |
US7560352B2 (en) * | 2004-12-01 | 2009-07-14 | Applied Materials, Inc. | Selective deposition |
US7682940B2 (en) * | 2004-12-01 | 2010-03-23 | Applied Materials, Inc. | Use of Cl2 and/or HCl during silicon epitaxial film formation |
US7312128B2 (en) * | 2004-12-01 | 2007-12-25 | Applied Materials, Inc. | Selective epitaxy process with alternating gas supply |
US7674337B2 (en) * | 2006-04-07 | 2010-03-09 | Applied Materials, Inc. | Gas manifolds for use during epitaxial film formation |
JP5090451B2 (ja) * | 2006-07-31 | 2012-12-05 | アプライド マテリアルズ インコーポレイテッド | 炭素含有シリコンエピタキシャル層の形成方法 |
CN101496150B (zh) * | 2006-07-31 | 2012-07-18 | 应用材料公司 | 控制外延层形成期间形态的方法 |
KR102011174B1 (ko) | 2012-09-27 | 2019-08-14 | 로무 가부시키가이샤 | 칩 다이오드 및 그 제조 방법 |
US10468402B1 (en) * | 2018-07-25 | 2019-11-05 | Semiconductor Components Industries, Llc | Trench diode and method of forming the same |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR1522532A (fr) * | 1967-03-17 | 1968-04-26 | Europ Des Semiconducteurs Soc | Perfectionnements aux diodes zener |
DE2026683B2 (de) * | 1970-06-01 | 1973-11-08 | Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt | Zenerdiode |
FR2096859B2 (de) * | 1970-07-07 | 1973-11-16 | Sescosem | |
DE2207654B2 (de) * | 1972-02-18 | 1974-02-14 | Deutsche Itt Industries Gmbh, 7800 Freiburg | Verfahren zum Herstellen einer Zenerdiode |
JPS4999284A (de) * | 1973-01-27 | 1974-09-19 | ||
JPS511586A (ja) * | 1974-06-26 | 1976-01-08 | Toyo Kogyo Co | Kariugomutokinzokutono setsuchakuhoho |
US4030117A (en) * | 1975-03-10 | 1977-06-14 | International Telephone And Telegraph Corporation | Zener diode |
FR2454704A1 (fr) * | 1979-04-20 | 1980-11-14 | Thomson Csf | Diode a avalanche de type planar a tension de claquage comprise entre 4 et 8 volts |
-
1980
- 1980-08-18 NL NLAANVRAGE8004651,A patent/NL187942C/xx not_active IP Right Cessation
-
1981
- 1981-07-20 US US06/284,436 patent/US4429324A/en not_active Expired - Fee Related
- 1981-08-13 DE DE3131991A patent/DE3131991C2/de not_active Expired
- 1981-08-14 GB GB8124868A patent/GB2082386B/en not_active Expired
- 1981-08-14 IT IT23532/81A patent/IT1139373B/it active
- 1981-08-17 FR FR8115820A patent/FR2488734B1/fr not_active Expired
- 1981-08-17 JP JP56128656A patent/JPS5771186A/ja active Pending
Also Published As
Publication number | Publication date |
---|---|
GB2082386A (en) | 1982-03-03 |
JPS5771186A (en) | 1982-05-01 |
GB2082386B (en) | 1984-08-15 |
DE3131991A1 (de) | 1982-04-29 |
FR2488734B1 (fr) | 1986-08-29 |
NL187942B (nl) | 1991-09-16 |
IT1139373B (it) | 1986-09-24 |
US4429324A (en) | 1984-01-31 |
IT8123532A0 (it) | 1981-08-14 |
FR2488734A1 (fr) | 1982-02-19 |
DE3131991C2 (de) | 1987-01-02 |
NL8004651A (nl) | 1982-03-16 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
A1B | A search report has been drawn up | ||
BC | A request for examination has been filed | ||
A85 | Still pending on 85-01-01 | ||
V1 | Lapsed because of non-payment of the annual fee |