NL185186C - Halfgeleiderlaserelement. - Google Patents

Halfgeleiderlaserelement.

Info

Publication number: NL185186C
Authority: NL; Netherlands
Prior art keywords: semiconductor laser; laser element; semiconductor; laser
Prior art date: 1979-02-26

Application number

NLAANVRAGE8001104,A

Other languages

English (en)

Other versions

NL185186B (nl

NL8001104A (nl

Original Assignee

Hitachi Ltd

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1979-02-26

Filing date

1980-02-22

Publication date

1990-02-01

1980-02-22 Application filed by Hitachi Ltd filed Critical Hitachi Ltd

1980-08-28 Publication of NL8001104A publication Critical patent/NL8001104A/nl

1989-09-01 Publication of NL185186B publication Critical patent/NL185186B/nl

1990-02-01 Application granted granted Critical

1990-02-01 Publication of NL185186C publication Critical patent/NL185186C/nl

Links

Classifications

- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
- H01S5/0282—Passivation layers or treatments
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
- H01S5/0282—Passivation layers or treatments
- H01S5/0283—Optically inactive coating on the facet, e.g. half-wave coating

Landscapes

Physics & Mathematics (AREA)
Condensed Matter Physics & Semiconductors (AREA)
General Physics & Mathematics (AREA)
Electromagnetism (AREA)
Optics & Photonics (AREA)
Semiconductor Lasers (AREA)

NLAANVRAGE8001104,A 1979-02-26 1980-02-22 Halfgeleiderlaserelement. NL185186C (nl)

Applications Claiming Priority (2)

Application Number	Priority Date	Filing Date	Title
JP2080279		1979-02-26
JP2080279A JPS55115386A (en)	1979-02-26	1979-02-26	Semiconductor laser unit

Publications (3)

Publication Number	Publication Date
NL8001104A NL8001104A (nl)	1980-08-28
NL185186B NL185186B (nl)	1989-09-01
NL185186C true NL185186C (nl)	1990-02-01

Family

ID=12037174

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
NLAANVRAGE8001104,A NL185186C (nl)	1979-02-26	1980-02-22	Halfgeleiderlaserelement.

Country Status (6)

Country	Link
US (1)	US4337443A (nl)
JP (1)	JPS55115386A (nl)
CA (1)	CA1141457A (nl)
DE (1)	DE3006949C2 (nl)
GB (1)	GB2043989B (nl)
NL (1)	NL185186C (nl)

Families Citing this family (46)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPS5967677A (ja) *	1982-07-01	1984-04-17	Semiconductor Res Found	光集積回路
JPS59119733A (ja) *	1982-12-24	1984-07-11	Toshiba Corp	半導体装置
JPS59145588A (ja) *	1983-02-09	1984-08-21	Hitachi Ltd	半導体レ−ザ装置
US4563368A (en) *	1983-02-14	1986-01-07	Xerox Corporation	Passivation for surfaces and interfaces of semiconductor laser facets or the like
US4656638A (en) *	1983-02-14	1987-04-07	Xerox Corporation	Passivation for surfaces and interfaces of semiconductor laser facets or the like
US4622671A (en) *	1983-02-25	1986-11-11	At&T Bell Laboratories	Multicavity optical device
DE3477980D1 (en) *	1983-02-25	1989-06-01	American Telephone & Telegraph	Multicavity optical device and applications thereof
US4734380A (en) *	1983-04-08	1988-03-29	American Telephone And Telegraph Company, At&T Bell Laboratories	Multicavity optical device held together by metallic film
US4510607A (en) *	1984-01-03	1985-04-09	The United States Of America As Represented By The Secretary Of The Navy	Semiconductor laser end-facet coatings for use in solid or liquid environments
US4737962A (en) *	1984-05-16	1988-04-12	Sharp Kabushiki Kaisha	Compound resonator type semiconductor laser device
US4633476A (en) *	1984-11-16	1986-12-30	Spectra Diode Laboratories, Inc.	Semiconductor laser with internal reflectors and vertical output
GB8514051D0 (en) *	1985-06-04	1985-07-10	British Telecomm	Opto-electronic devices
JPS61296785A (ja) *	1985-06-25	1986-12-27	Sharp Corp	半導体レ−ザアレイ装置
US4840922A (en) *	1986-07-29	1989-06-20	Ricoh Company, Ltd.	Method of manufacturing masked semiconductor laser
JPS63198390A (ja) *	1987-02-13	1988-08-17	Ricoh Co Ltd	マスク半導体レ−ザ−の製作方法
JPH0644663B2 (ja) *	1987-03-31	1994-06-08	三菱電機株式会社	半導体レ−ザ
US4845725A (en) *	1987-05-20	1989-07-04	Spectra Diode Laboratories, Inc.	Window laser with high power reduced divergence output
JPH01141132U (nl) *	1988-03-24	1989-09-27
JP2991716B2 (ja) *	1988-08-16	1999-12-20	三菱化学株式会社	エッチトミラー型化合物半導体レーザー装置及び集積素子
ES2072321T3 (es) *	1989-02-01	1995-07-16	Siemens Ag	Capa de pasivado electroactiva.
DE68915763T2 (de) *	1989-09-07	1994-12-08	Ibm	Verfahren zur Spiegelpassivierung bei Halbleiterlaserdioden.
JP2736173B2 (ja) *	1990-12-18	1998-04-02	シャープ株式会社	半導体レーザ素子の製造方法
JP3381073B2 (ja) *	1992-09-28	2003-02-24	ソニー株式会社	半導体レーザ装置とその製造方法
US5440575A (en) *	1994-04-06	1995-08-08	At&T Corp.	Article comprising a semiconductor laser with stble facet coating
US5665637A (en) *	1995-11-17	1997-09-09	Lucent Technologies Inc.	Passivated faceted article comprising a semiconductor laser
JPH09167873A (ja) *	1995-12-15	1997-06-24	Mitsubishi Electric Corp	半導体レーザ装置
EP0814544B1 (en) *	1996-06-22	2002-08-21	International Business Machines Corporation	Semiconductor laser with facet coating and method for making the same
US5940424A (en) *	1996-06-24	1999-08-17	International Business Machines Corporation	Semiconductor lasers and method for making the same
JP2001515656A (ja) *	1996-12-13	2001-09-18	ユニフェイズオプトホールディングスインコーポレイテッド	半導体レーザ及びその製造方法
GB2333896B (en) *	1998-01-31	2003-04-09	Mitel Semiconductor Ab	Vertical cavity surface emitting laser
US6396864B1 (en)	1998-03-13	2002-05-28	Jds Uniphase Corporation	Thermally conductive coatings for light emitting devices
US6590920B1 (en)	1998-10-08	2003-07-08	Adc Telecommunications, Inc.	Semiconductor lasers having single crystal mirror layers grown directly on facet
US6483862B1 (en) *	1998-12-11	2002-11-19	Agilent Technologies, Inc.	System and method for the monolithic integration of a light emitting device and a photodetector using a native oxide semiconductor layer
US6519272B1 (en)	1999-06-30	2003-02-11	Corning Incorporated	Long, high-power semiconductor laser with shifted-wave and passivated output facet
US6744796B1 (en) *	2000-03-30	2004-06-01	Triquint Technology Holding Co.	Passivated optical device and method of forming the same
US6618409B1 (en)	2000-05-03	2003-09-09	Corning Incorporated	Passivation of semiconductor laser facets
JP4033626B2 (ja) *	2000-10-06	2008-01-16	日本オプネクスト株式会社	半導体レーザ装置の製造方法
JP4102554B2 (ja) *	2000-10-31	2008-06-18	シャープ株式会社	半導体レーザ素子及びその製造方法
JP2002164609A (ja) *	2000-11-28	2002-06-07	Sharp Corp	半導体レーザ素子およびその製造方法
JP3868286B2 (ja) *	2001-12-21	2007-01-17	シャープ株式会社	フォトマスクおよび半導体レーザ素子の製造方法
JP3770386B2 (ja) *	2002-03-29	2006-04-26	ユーディナデバイス株式会社	光半導体装置及びその製造方法
US7687291B2 (en) *	2005-03-25	2010-03-30	Trumpf Photonics Inc.	Laser facet passivation
EP1906461B1 (de) *	2006-09-26	2020-03-18	OSRAM Opto Semiconductors GmbH	Verfahren zur Herstellung eines optoelektronischen Bauelements und optoelektronisches Bauelement
DE102009054912A1 (de) *	2009-08-28	2011-03-10	M2K-Laser Gmbh	Hochleistungs-Diodenlaser und Verfahren zum Herstellen eines Hochleistungs-Diodenlasers
JP2012109499A (ja) *	2010-11-19	2012-06-07	Sony Corp	半導体レーザ素子およびその製造方法
CN117096723B (zh) *	2023-10-20	2024-02-06	度亘核芯光电技术(苏州)有限公司	钝化膜结构及形成方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US3914465A (en) *	1972-09-25	1975-10-21	Bell Telephone Labor Inc	Surface passivation of GaAs junction laser devices
GB1407351A (en) *	1973-02-06	1975-09-24	Standard Telephones Cables Ltd	Injection lasers
US3849738A (en) *	1973-04-05	1974-11-19	Bell Telephone Labor Inc	Multilayer antireflection coatings for solid state lasers
US4178564A (en) *	1976-01-15	1979-12-11	Rca Corporation	Half wave protection layers on injection lasers
US4095011A (en) *	1976-06-21	1978-06-13	Rca Corp.	Electroluminescent semiconductor device with passivation layer
DE2632647A1 (de) *	1976-07-20	1978-01-26	Siemens Ag	Halbleiterbauelement mit passivierender schutzschicht
US4254426A (en) *	1979-05-09	1981-03-03	Rca Corporation	Method and structure for passivating semiconductor material

1979
- 1979-02-26 JP JP2080279A patent/JPS55115386A/ja active Granted
1980
- 1980-02-22 NL NLAANVRAGE8001104,A patent/NL185186C/nl not_active IP Right Cessation
- 1980-02-25 CA CA000346345A patent/CA1141457A/en not_active Expired
- 1980-02-25 DE DE3006949A patent/DE3006949C2/de not_active Expired
- 1980-02-25 US US06/124,266 patent/US4337443A/en not_active Expired - Lifetime
- 1980-02-25 GB GB8006246A patent/GB2043989B/en not_active Expired

Also Published As

Publication number	Publication date
US4337443A (en)	1982-06-29
JPS5722426B2 (nl)	1982-05-13
CA1141457A (en)	1983-02-15
NL185186B (nl)	1989-09-01
NL8001104A (nl)	1980-08-28
DE3006949A1 (de)	1980-09-04
GB2043989B (en)	1983-02-02
JPS55115386A (en)	1980-09-05
GB2043989A (en)	1980-10-08
DE3006949C2 (de)	1982-10-28

Legal Events

Date	Code	Title	Description
1980-09-10	A1A	A request for search or an international-type search has been filed
1982-08-02	BB	A search report has been drawn up
1984-06-01	BC	A request for examination has been filed
1985-01-01	A85	Still pending on 85-01-01
1995-11-01	V1	Lapsed because of non-payment of the annual fee	Effective date: 19950901

Publication	Publication Date	Title
NL185186C (nl)	1990-02-01	Halfgeleiderlaserelement.
NL181963C (nl)	1987-12-01	Halfgeleiderlaserinrichting.
NO163653C (no)	1990-06-27	Laser-radiometer.
NL7704226A (nl)	1977-10-18	Halfgeleider laserinrichting.
IT1084379B (it)	1985-05-25	Procedimento di piroscissione.
NO803753L (no)	1981-06-16	Pakning.
NL7711664A (nl)	1978-04-25	Halfgeleiderlaser.
NL171760C (nl)	1983-05-02	Halfgeleiderlaser.
NL184086C (nl)	1989-04-03	Laser.
ES256673Y (es)	1981-12-16	Guardavistas.
NL7808060A (nl)	1979-02-13	Halfgeleiderelement.
NL184715C (nl)	1989-10-02	Halfgeleiderlaserinrichting.
NL7700283A (nl)	1977-07-14	Halfgeleiderinjectielaser.
NL7902967A (nl)	1979-10-23	Elektroluminescerende halfgeleiderinrichting.
NL7701379A (nl)	1977-08-30	Licht-uitzendend halfgeleiderelement.
DE3072204D1 (de)	1992-12-17	Halbleiterspeicheranordnung.
ES254327Y (es)	1982-02-16	Portillon.
IT8021530A0 (it)	1980-04-21	Dispositivo semiconduttore ad elettroluminescenza.
NL190943C (nl)	1994-11-01	Halfgeleiderlaser.
IT8023529A0 (it)	1980-07-18	Struttura semiconduttrice.
NO802172L (no)	1981-02-11	Substituerte difenyletere.
NL7706405A (nl)	1977-12-23	Laser.
IT8019838A0 (it)	1980-02-11	Dispositivo semiconduttore.
IT8026552A0 (it)	1980-12-10	Laser a semiconduttore.
IT8021230A0 (it)	1980-04-04	Amminoacetonitrili idrossiimmino sostituiti.