NL162792C - Veldeffecttransistor met geisoleerde stuurelektrode, die met een beveiligingsdiode met ten minste een pn-overgang is verbonden. - Google Patents

Veldeffecttransistor met geisoleerde stuurelektrode, die met een beveiligingsdiode met ten minste een pn-overgang is verbonden.

Info

Publication number
NL162792C
NL162792C NL6903231.A NL6903231A NL162792C NL 162792 C NL162792 C NL 162792C NL 6903231 A NL6903231 A NL 6903231A NL 162792 C NL162792 C NL 162792C
Authority
NL
Netherlands
Prior art keywords
transition
field effect
effect transistor
electrode connected
steering electrode
Prior art date
Application number
NL6903231.A
Other languages
English (en)
Other versions
NL6903231A (nl
NL162792B (nl
Inventor
Rijkert Jan Ir Nienhuis
Original Assignee
Philips Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Nv filed Critical Philips Nv
Priority to NL6903231.A priority Critical patent/NL162792C/nl
Priority to US818664A priority patent/US3648129A/en
Priority to CH282670A priority patent/CH509668A/de
Priority to SE02530/70A priority patent/SE365346B/xx
Priority to JP45015967A priority patent/JPS4838101B1/ja
Priority to GB1297851D priority patent/GB1297851A/en
Priority to AT176470A priority patent/AT315240B/de
Priority to BR217115/70A priority patent/BR7017115D0/pt
Priority to DE2009431A priority patent/DE2009431C2/de
Priority to BE746706D priority patent/BE746706A/xx
Priority to FR7007396A priority patent/FR2034595B1/fr
Publication of NL6903231A publication Critical patent/NL6903231A/xx
Publication of NL162792B publication Critical patent/NL162792B/nl
Application granted granted Critical
Publication of NL162792C publication Critical patent/NL162792C/nl

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/52—Circuit arrangements for protecting such amplifiers
    • H03F1/523—Circuit arrangements for protecting such amplifiers for amplifiers using field-effect devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
    • H01L27/0255—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using diodes as protective elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
    • H01L27/0617—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type
    • H01L27/0629—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type in combination with diodes, or resistors, or capacitors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
    • H03K17/081—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit
    • H03K17/0812—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the control circuit
    • H03K17/08122—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the control circuit in field-effect transistor switches
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/06—Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
    • H01L2224/0601—Structure
    • H01L2224/0603—Bonding areas having different sizes, e.g. different heights or widths

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Amplifiers (AREA)
  • Protection Of Static Devices (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
NL6903231.A 1969-03-01 1969-03-01 Veldeffecttransistor met geisoleerde stuurelektrode, die met een beveiligingsdiode met ten minste een pn-overgang is verbonden. NL162792C (nl)

Priority Applications (11)

Application Number Priority Date Filing Date Title
NL6903231.A NL162792C (nl) 1969-03-01 1969-03-01 Veldeffecttransistor met geisoleerde stuurelektrode, die met een beveiligingsdiode met ten minste een pn-overgang is verbonden.
US818664A US3648129A (en) 1969-03-01 1969-04-23 Insulated gate field effect transistor with integrated safety diode
SE02530/70A SE365346B (nl) 1969-03-01 1970-02-26
JP45015967A JPS4838101B1 (nl) 1969-03-01 1970-02-26
GB1297851D GB1297851A (nl) 1969-03-01 1970-02-26
AT176470A AT315240B (de) 1969-03-01 1970-02-26 Feldeffekttransistor mit isolierter Torelektrode
CH282670A CH509668A (de) 1969-03-01 1970-02-26 Feldeffekttransistor mit isolierter Torelektrode
BR217115/70A BR7017115D0 (pt) 1969-03-01 1970-02-27 Transistor de efeito de campo do tipo compreendendo um eletrodo porta isolado
DE2009431A DE2009431C2 (de) 1969-03-01 1970-02-27 Feldeffekttransistor mit isolierter Gate-Elektrode und mit einer Schutzdiode sowie Schaltungsanordnung mit einem solchen Feldeffekttransistor
BE746706D BE746706A (fr) 1969-03-01 1970-02-27 Transistor a effet de champ comportant une electrode-porte isolee
FR7007396A FR2034595B1 (nl) 1969-03-01 1970-03-02

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL6903231.A NL162792C (nl) 1969-03-01 1969-03-01 Veldeffecttransistor met geisoleerde stuurelektrode, die met een beveiligingsdiode met ten minste een pn-overgang is verbonden.

Publications (3)

Publication Number Publication Date
NL6903231A NL6903231A (nl) 1970-09-03
NL162792B NL162792B (nl) 1980-01-15
NL162792C true NL162792C (nl) 1980-06-16

Family

ID=19806297

Family Applications (1)

Application Number Title Priority Date Filing Date
NL6903231.A NL162792C (nl) 1969-03-01 1969-03-01 Veldeffecttransistor met geisoleerde stuurelektrode, die met een beveiligingsdiode met ten minste een pn-overgang is verbonden.

Country Status (11)

Country Link
US (1) US3648129A (nl)
JP (1) JPS4838101B1 (nl)
AT (1) AT315240B (nl)
BE (1) BE746706A (nl)
BR (1) BR7017115D0 (nl)
CH (1) CH509668A (nl)
DE (1) DE2009431C2 (nl)
FR (1) FR2034595B1 (nl)
GB (1) GB1297851A (nl)
NL (1) NL162792C (nl)
SE (1) SE365346B (nl)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4836598B1 (nl) * 1969-09-05 1973-11-06
JPS5115394B1 (nl) * 1969-11-20 1976-05-17
US3806773A (en) * 1971-07-17 1974-04-23 Sony Corp Field effect transistor having back-to-back diodes connected to the gate electrode and having a protective layer between the source and the diodes to prevent thyristor action
US4342045A (en) * 1980-04-28 1982-07-27 Advanced Micro Devices, Inc. Input protection device for integrated circuits
US4763184A (en) * 1985-04-30 1988-08-09 Waferscale Integration, Inc. Input circuit for protecting against damage caused by electrostatic discharge
BE1007672A3 (nl) * 1993-10-27 1995-09-12 Philips Electronics Nv Hoogfrequent halfgeleiderinrichting met beveiligingsinrichting.
JP2002208702A (ja) * 2001-01-10 2002-07-26 Mitsubishi Electric Corp パワー半導体装置
GB0128665D0 (en) * 2001-11-30 2002-01-23 Power Innovations Ltd Overvoltage protection device

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1484322A (fr) * 1965-06-22 1967-06-09 Philips Nv Composant semi-conducteur complexe
US3764864A (en) * 1966-03-29 1973-10-09 Matsushita Electronics Corp Insulated-gate field-effect transistor with punch-through effect element
FR1546644A (fr) * 1966-09-19 1968-11-22 Matsushita Electronics Corp Dispositif semi-conducteur
US3469155A (en) * 1966-09-23 1969-09-23 Westinghouse Electric Corp Punch-through means integrated with mos type devices for protection against insulation layer breakdown
US3440500A (en) * 1966-09-26 1969-04-22 Itt High frequency field effect transistor
US3555374A (en) * 1967-03-03 1971-01-12 Hitachi Ltd Field effect semiconductor device having a protective diode
US3470390A (en) * 1968-02-02 1969-09-30 Westinghouse Electric Corp Integrated back-to-back diodes to prevent breakdown of mis gate dielectric
US3512058A (en) * 1968-04-10 1970-05-12 Rca Corp High voltage transient protection for an insulated gate field effect transistor

Also Published As

Publication number Publication date
CH509668A (de) 1971-06-30
GB1297851A (nl) 1972-11-29
DE2009431A1 (de) 1970-09-17
DE2009431C2 (de) 1982-04-29
BR7017115D0 (pt) 1973-01-16
SE365346B (nl) 1974-03-18
JPS4838101B1 (nl) 1973-11-15
NL6903231A (nl) 1970-09-03
NL162792B (nl) 1980-01-15
US3648129A (en) 1972-03-07
AT315240B (de) 1974-05-10
FR2034595A1 (nl) 1970-12-11
FR2034595B1 (nl) 1975-09-26
BE746706A (fr) 1970-08-27

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Legal Events

Date Code Title Description
V1 Lapsed because of non-payment of the annual fee