NL152707B - Halfgeleiderinrichting bevattende een veldeffecttransistor van het type met geisoleerde poortelektrode en werkwijze ter vervaardiging daarvan. - Google Patents

Halfgeleiderinrichting bevattende een veldeffecttransistor van het type met geisoleerde poortelektrode en werkwijze ter vervaardiging daarvan.

Info

Publication number
NL152707B
NL152707B NL676707956A NL6707956A NL152707B NL 152707 B NL152707 B NL 152707B NL 676707956 A NL676707956 A NL 676707956A NL 6707956 A NL6707956 A NL 6707956A NL 152707 B NL152707 B NL 152707B
Authority
NL
Netherlands
Prior art keywords
manufacture
type
field effect
effect transistor
semiconductor containing
Prior art date
Application number
NL676707956A
Other languages
English (en)
Other versions
NL6707956A (nl
Inventor
Else Dr Kooi
Original Assignee
Philips Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Nv filed Critical Philips Nv
Priority to NL676707956A priority Critical patent/NL152707B/nl
Priority to US727563A priority patent/US3544858A/en
Priority to DE1764401A priority patent/DE1764401C3/de
Priority to DE19681789175 priority patent/DE1789175A1/de
Priority to GB5894170A priority patent/GB1235178A/en
Priority to GB5894270A priority patent/GB1235179A/en
Priority to AT536568A priority patent/AT315916B/de
Priority to SE07533/68A priority patent/SE330212B/xx
Priority to CH827368A priority patent/CH508988A/de
Priority to GB26718/68A priority patent/GB1235177A/en
Priority to NO2216/68A priority patent/NO121852B/no
Priority to ES354734A priority patent/ES354734A1/es
Priority to BE716208D priority patent/BE716208A/xx
Priority to DK265168AA priority patent/DK121771B/da
Priority to FR1571569D priority patent/FR1571569A/fr
Publication of NL6707956A publication Critical patent/NL6707956A/xx
Priority to US19849A priority patent/US3676921A/en
Priority to JP47078068A priority patent/JPS4816035B1/ja
Priority to JP49038970A priority patent/JPS5812748B1/ja
Publication of NL152707B publication Critical patent/NL152707B/nl
Priority to US05/908,846 priority patent/USRE30251E/en
Priority to US06/191,031 priority patent/USRE31580E/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/32—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers using masks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/76202—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO
    • H01L21/76213—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO introducing electrical inactive or active impurities in the local oxidation region, e.g. to alter LOCOS oxide growth characteristics or for additional isolation purpose
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/76202—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO
    • H01L21/76221—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO with a plurality of successive local oxidation steps
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76897—Formation of self-aligned vias or contact plugs, i.e. involving a lithographically uncritical step
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
    • H01L29/41725—Source or drain electrodes for field effect devices
    • H01L29/41766—Source or drain electrodes for field effect devices with at least part of the source or drain electrode having contact below the semiconductor surface, e.g. the source or drain electrode formed at least partially in a groove or with inclusions of conductor inside the semiconductor
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/043—Dual dielectric
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/053—Field effect transistors fets
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/103—Mask, dual function, e.g. diffusion and oxidation
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/113—Nitrides of boron or aluminum or gallium
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/114—Nitrides of silicon
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/117—Oxidation, selective
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/141—Self-alignment coat gate

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Formation Of Insulating Films (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Local Oxidation Of Silicon (AREA)
  • Thin Film Transistor (AREA)
NL676707956A 1967-06-08 1967-06-08 Halfgeleiderinrichting bevattende een veldeffecttransistor van het type met geisoleerde poortelektrode en werkwijze ter vervaardiging daarvan. NL152707B (nl)

Priority Applications (20)

Application Number Priority Date Filing Date Title
NL676707956A NL152707B (nl) 1967-06-08 1967-06-08 Halfgeleiderinrichting bevattende een veldeffecttransistor van het type met geisoleerde poortelektrode en werkwijze ter vervaardiging daarvan.
US727563A US3544858A (en) 1967-06-08 1968-05-08 Insulated gate field-effect transistor comprising a mesa channel and a thicker surrounding oxide
DE1764401A DE1764401C3 (de) 1967-06-08 1968-05-30 Feldeffekttransistor mit isolierter Steuerelektrode und Verfahren zu seiner Herstellung
DE19681789175 DE1789175A1 (de) 1967-06-08 1968-05-30 Verfahren zum herstellen eines feldeffekttransistors mit isolierter steuerelektrode
GB26718/68A GB1235177A (en) 1967-06-08 1968-06-05 Improvements in and relating to semiconductor devices
GB5894270A GB1235179A (en) 1967-06-08 1968-06-05 Methods of manufacturing semiconductor devices
AT536568A AT315916B (de) 1967-06-08 1968-06-05 Halbleiterbauelement und Verfahren zu seiner Herstellung
SE07533/68A SE330212B (nl) 1967-06-08 1968-06-05
CH827368A CH508988A (de) 1967-06-08 1968-06-05 Feldeffekttransistor mit isolierter Torelektrode und Verfahren zu seiner Herstellung
GB5894170A GB1235178A (en) 1967-06-08 1968-06-05 Methods of manufacturing semiconductor devices
DK265168AA DK121771B (da) 1967-06-08 1968-06-06 Halvlederkomponent med en felteffekttransistor med isoleret styreelektrode samt fremgangsmåde til fremstilling af komponenten.
ES354734A ES354734A1 (es) 1967-06-08 1968-06-06 Un metodo de fabricacion de un dispositivo semiconductor.
BE716208D BE716208A (nl) 1967-06-08 1968-06-06
NO2216/68A NO121852B (nl) 1967-06-08 1968-06-06
FR1571569D FR1571569A (nl) 1967-06-08 1968-06-10
US19849A US3676921A (en) 1967-06-08 1970-03-16 Semiconductor device comprising an insulated gate field effect transistor and method of manufacturing the same
JP47078068A JPS4816035B1 (nl) 1967-06-08 1972-08-05
JP49038970A JPS5812748B1 (nl) 1967-06-08 1974-04-08
US05/908,846 USRE30251E (en) 1967-06-08 1978-05-23 Semiconductor device comprising an insulated gate field effect transistor and method of manufacturing the same
US06/191,031 USRE31580E (en) 1967-06-08 1980-09-25 Insulated gate field-effect transistor comprising a mesa channel and a thicker surrounding oxide

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL676707956A NL152707B (nl) 1967-06-08 1967-06-08 Halfgeleiderinrichting bevattende een veldeffecttransistor van het type met geisoleerde poortelektrode en werkwijze ter vervaardiging daarvan.

Publications (2)

Publication Number Publication Date
NL6707956A NL6707956A (nl) 1968-12-09
NL152707B true NL152707B (nl) 1977-03-15

Family

ID=19800359

Family Applications (1)

Application Number Title Priority Date Filing Date
NL676707956A NL152707B (nl) 1967-06-08 1967-06-08 Halfgeleiderinrichting bevattende een veldeffecttransistor van het type met geisoleerde poortelektrode en werkwijze ter vervaardiging daarvan.

Country Status (13)

Country Link
US (1) US3544858A (nl)
JP (2) JPS4816035B1 (nl)
AT (1) AT315916B (nl)
BE (1) BE716208A (nl)
CH (1) CH508988A (nl)
DE (1) DE1764401C3 (nl)
DK (1) DK121771B (nl)
ES (1) ES354734A1 (nl)
FR (1) FR1571569A (nl)
GB (1) GB1235177A (nl)
NL (1) NL152707B (nl)
NO (1) NO121852B (nl)
SE (1) SE330212B (nl)

Families Citing this family (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS518316B1 (nl) * 1969-10-22 1976-03-16
US3698966A (en) * 1970-02-26 1972-10-17 North American Rockwell Processes using a masking layer for producing field effect devices having oxide isolation
DE2128470A1 (de) * 1970-06-15 1972-01-20 Hitachi Ltd Integrierte Halbleiterschaltung und Verfahren zu ihrer Herstellung
NL170348C (nl) * 1970-07-10 1982-10-18 Philips Nv Werkwijze voor het vervaardigen van een halfgeleiderinrichting, waarbij op een oppervlak van een halfgeleiderlichaam een tegen dotering en tegen thermische oxydatie maskerend masker wordt aangebracht, de door de vensters in het masker vrijgelaten delen van het oppervlak worden onderworpen aan een etsbehandeling voor het vormen van verdiepingen en het halfgeleiderlichaam met het masker wordt onderworpen aan een thermische oxydatiebehandeling voor het vormen van een oxydepatroon dat de verdiepingen althans ten dele opvult.
NL169121C (nl) * 1970-07-10 1982-06-01 Philips Nv Werkwijze voor het vervaardigen van een halfgeleiderinrichting met een halfgeleiderlichaam, dat aan een oppervlak is voorzien van een althans ten dele in het halfgeleiderlichaam verzonken, door thermische oxydatie gevormd oxydepatroon.
NL7017066A (nl) * 1970-11-21 1972-05-24
NL170901C (nl) * 1971-04-03 1983-01-03 Philips Nv Werkwijze voor het vervaardigen van een halfgeleiderinrichting.
FR2134290B1 (nl) * 1971-04-30 1977-03-18 Texas Instruments France
US3751722A (en) * 1971-04-30 1973-08-07 Standard Microsyst Smc Mos integrated circuit with substrate containing selectively formed resistivity regions
NL176406C (nl) * 1971-10-27 1985-04-01 Philips Nv Ladingsgekoppelde halfgeleiderinrichting met een halfgeleiderlichaam bevattende een aan een oppervlak grenzende halfgeleiderlaag en middelen om informatie in de vorm van pakketten meerderheidsladingsdragers in te voeren in de halfgeleiderlaag.
NL161305C (nl) * 1971-11-20 1980-01-15 Philips Nv Werkwijze voor het vervaardigen van een halfgeleiderin- richting.
JPS5538823B2 (nl) * 1971-12-22 1980-10-07
US3853633A (en) * 1972-12-04 1974-12-10 Motorola Inc Method of making a semi planar insulated gate field-effect transistor device with implanted field
GB1437112A (en) * 1973-09-07 1976-05-26 Mullard Ltd Semiconductor device manufacture
JPS5232680A (en) * 1975-09-08 1977-03-12 Toko Inc Manufacturing process of insulation gate-type field-effect semiconduct or device
JPS6041470B2 (ja) * 1976-06-15 1985-09-17 松下電器産業株式会社 半導体装置の製造方法
US4271421A (en) * 1977-01-26 1981-06-02 Texas Instruments Incorporated High density N-channel silicon gate read only memory
US4830975A (en) * 1983-01-13 1989-05-16 National Semiconductor Corporation Method of manufacture a primos device
DE3318213A1 (de) * 1983-05-19 1984-11-22 Deutsche Itt Industries Gmbh, 7800 Freiburg Verfahren zum herstellen eines integrierten isolierschicht-feldeffekttransistors mit zur gateelektrode selbstausgerichteten kontakten
US4862232A (en) * 1986-09-22 1989-08-29 General Motors Corporation Transistor structure for high temperature logic circuits with insulation around source and drain regions
US4714685A (en) * 1986-12-08 1987-12-22 General Motors Corporation Method of fabricating self-aligned silicon-on-insulator like devices
US4797718A (en) * 1986-12-08 1989-01-10 Delco Electronics Corporation Self-aligned silicon MOS device
US4749441A (en) * 1986-12-11 1988-06-07 General Motors Corporation Semiconductor mushroom structure fabrication
US4760036A (en) * 1987-06-15 1988-07-26 Delco Electronics Corporation Process for growing silicon-on-insulator wafers using lateral epitaxial growth with seed window oxidation
US7981759B2 (en) * 2007-07-11 2011-07-19 Paratek Microwave, Inc. Local oxidation of silicon planarization for polysilicon layers under thin film structures
JP5213429B2 (ja) * 2007-12-13 2013-06-19 キヤノン株式会社 電界効果型トランジスタ
USD872962S1 (en) 2017-05-25 2020-01-14 Unarco Industries Llc Cart

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR14565E (fr) * 1911-06-19 1912-01-11 Robert Morane Dispositif pour le lancement des aéroplaness
NL299911A (nl) * 1951-08-02
NL261446A (nl) * 1960-03-25
BE637065A (nl) * 1962-09-07
FR1392748A (fr) * 1963-03-07 1965-03-19 Rca Corp Montages de commutation à transistors
US3290753A (en) * 1963-08-19 1966-12-13 Bell Telephone Labor Inc Method of making semiconductor integrated circuit elements
US3344322A (en) * 1965-01-22 1967-09-26 Hughes Aircraft Co Metal-oxide-semiconductor field effect transistor

Also Published As

Publication number Publication date
CH508988A (de) 1971-06-15
DE1764401C3 (de) 1982-07-08
SE330212B (nl) 1970-11-09
BE716208A (nl) 1968-12-06
DK121771B (da) 1971-11-29
DE1764401B2 (de) 1975-06-19
NO121852B (nl) 1971-04-19
GB1235177A (en) 1971-06-09
US3544858A (en) 1970-12-01
DE1764401A1 (de) 1971-05-13
JPS4816035B1 (nl) 1973-05-18
NL6707956A (nl) 1968-12-09
FR1571569A (nl) 1969-06-20
AT315916B (de) 1974-06-25
ES354734A1 (es) 1971-02-16
JPS5812748B1 (nl) 1983-03-10

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