NL145396B - Werkwijze ter vervaardiging van een geintegreerde halfgeleiderinrichting en geintegreerde halfgeleiderinrichting, vervaardigd volgens de werkwijze. - Google Patents

Werkwijze ter vervaardiging van een geintegreerde halfgeleiderinrichting en geintegreerde halfgeleiderinrichting, vervaardigd volgens de werkwijze.

Info

Publication number
NL145396B
NL145396B NL666614858A NL6614858A NL145396B NL 145396 B NL145396 B NL 145396B NL 666614858 A NL666614858 A NL 666614858A NL 6614858 A NL6614858 A NL 6614858A NL 145396 B NL145396 B NL 145396B
Authority
NL
Netherlands
Prior art keywords
conductor device
integrated
semic
procedure
manufacture
Prior art date
Application number
NL666614858A
Other languages
English (en)
Dutch (nl)
Other versions
NL6614858A (xx
Inventor
Drs Albert Schmitz
Cornelis Ir Mulder
Arie Slob
Original Assignee
Philips Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Nv filed Critical Philips Nv
Priority to NL666614858A priority Critical patent/NL145396B/xx
Priority to DE19671614286 priority patent/DE1614286C3/de
Priority to GB47387/67A priority patent/GB1206427A/en
Priority to US676235A priority patent/US3702428A/en
Priority to SE14270/67A priority patent/SE334949B/xx
Priority to AT940367A priority patent/AT280350B/de
Priority to CH1455567A priority patent/CH477765A/de
Priority to NO170178A priority patent/NO120746B/no
Priority to DK518467AA priority patent/DK122554B/da
Priority to BE705379D priority patent/BE705379A/xx
Priority to ES346217A priority patent/ES346217A1/es
Priority to BR194062/67A priority patent/BR6794062D0/pt
Priority to FR125187A priority patent/FR1541490A/fr
Publication of NL6614858A publication Critical patent/NL6614858A/xx
Priority to US05/527,236 priority patent/US3930909A/en
Publication of NL145396B publication Critical patent/NL145396B/xx

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8222—Bipolar technology
    • H01L21/8228—Complementary devices, e.g. complementary transistors
    • H01L21/82285—Complementary vertical transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/74—Making of localized buried regions, e.g. buried collector layers, internal connections substrate contacts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/761—PN junctions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/082—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only
    • H01L27/0823—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only including vertical bipolar transistors only
    • H01L27/0826—Combination of vertical complementary transistors
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/037—Diffusion-deposition
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/085—Isolated-integrated
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/151—Simultaneous diffusion

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)
  • Crushing And Grinding (AREA)
NL666614858A 1966-10-21 1966-10-21 Werkwijze ter vervaardiging van een geintegreerde halfgeleiderinrichting en geintegreerde halfgeleiderinrichting, vervaardigd volgens de werkwijze. NL145396B (nl)

Priority Applications (14)

Application Number Priority Date Filing Date Title
NL666614858A NL145396B (nl) 1966-10-21 1966-10-21 Werkwijze ter vervaardiging van een geintegreerde halfgeleiderinrichting en geintegreerde halfgeleiderinrichting, vervaardigd volgens de werkwijze.
DE19671614286 DE1614286C3 (de) 1966-10-21 1967-10-17 Halbleiteranordnung und Verfahren zu ihrer Herstellung
NO170178A NO120746B (xx) 1966-10-21 1967-10-18
US676235A US3702428A (en) 1966-10-21 1967-10-18 Monolithic ic with complementary transistors and plural buried layers
SE14270/67A SE334949B (xx) 1966-10-21 1967-10-18
AT940367A AT280350B (de) 1966-10-21 1967-10-18 Verfahren zur Herstellung einer Halbleitervorrichtung
CH1455567A CH477765A (de) 1966-10-21 1967-10-18 Verfahren zur Herstellung einer Halbleitervorrichtung und nach diesem Verfahren hergestellte Halbleitervorrichtung
GB47387/67A GB1206427A (en) 1966-10-21 1967-10-18 Manufacturing semiconductor devices
DK518467AA DK122554B (da) 1966-10-21 1967-10-18 Fremgangsmåde til fremstilling af et halvlederorgan.
BE705379D BE705379A (xx) 1966-10-21 1967-10-19
ES346217A ES346217A1 (es) 1966-10-21 1967-10-19 Un dispositivo semiconductor.
BR194062/67A BR6794062D0 (pt) 1966-10-21 1967-10-20 Processo para fabricacao de um dispositivo semi-condutor e um dispositivo semi-condutor produzido por este processo
FR125187A FR1541490A (fr) 1966-10-21 1967-10-20 Dispositif semi-conducteur et procédé pour sa fabrication
US05/527,236 US3930909A (en) 1966-10-21 1974-11-26 Method of manufacturing a semiconductor device utilizing simultaneous outdiffusion during epitaxial growth

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL666614858A NL145396B (nl) 1966-10-21 1966-10-21 Werkwijze ter vervaardiging van een geintegreerde halfgeleiderinrichting en geintegreerde halfgeleiderinrichting, vervaardigd volgens de werkwijze.

Publications (2)

Publication Number Publication Date
NL6614858A NL6614858A (xx) 1968-04-22
NL145396B true NL145396B (nl) 1975-03-17

Family

ID=19797975

Family Applications (1)

Application Number Title Priority Date Filing Date
NL666614858A NL145396B (nl) 1966-10-21 1966-10-21 Werkwijze ter vervaardiging van een geintegreerde halfgeleiderinrichting en geintegreerde halfgeleiderinrichting, vervaardigd volgens de werkwijze.

Country Status (11)

Country Link
US (1) US3702428A (xx)
AT (1) AT280350B (xx)
BE (1) BE705379A (xx)
BR (1) BR6794062D0 (xx)
CH (1) CH477765A (xx)
DK (1) DK122554B (xx)
ES (1) ES346217A1 (xx)
GB (1) GB1206427A (xx)
NL (1) NL145396B (xx)
NO (1) NO120746B (xx)
SE (1) SE334949B (xx)

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3909318A (en) * 1971-04-14 1975-09-30 Philips Corp Method of forming complementary devices utilizing outdiffusion and selective oxidation
JPS5113627B2 (xx) * 1971-08-25 1976-05-01
JPS5514543B2 (xx) * 1972-01-25 1980-04-17
US3891480A (en) * 1973-10-01 1975-06-24 Honeywell Inc Bipolar semiconductor device construction
US4013484A (en) * 1976-02-25 1977-03-22 Intel Corporation High density CMOS process
US4087900A (en) * 1976-10-18 1978-05-09 Bell Telephone Laboratories, Incorporated Fabrication of semiconductor integrated circuit structure including injection logic configuration compatible with complementary bipolar transistors utilizing simultaneous formation of device regions
US4357622A (en) * 1980-01-18 1982-11-02 International Business Machines Corporation Complementary transistor structure
US4485552A (en) * 1980-01-18 1984-12-04 International Business Machines Corporation Complementary transistor structure and method for manufacture
JPS5730359A (en) * 1980-07-30 1982-02-18 Nec Corp Semiconductor device
NL8104862A (nl) * 1981-10-28 1983-05-16 Philips Nv Halfgeleiderinrichting, en werkwijze ter vervaardiging daarvan.
EP0093304B1 (en) * 1982-04-19 1986-01-15 Matsushita Electric Industrial Co., Ltd. Semiconductor ic and method of making the same
JPS5994861A (ja) * 1982-11-24 1984-05-31 Hitachi Ltd 半導体集積回路装置及びその製造方法
US4940671A (en) * 1986-04-18 1990-07-10 National Semiconductor Corporation High voltage complementary NPN/PNP process
US5529939A (en) * 1986-09-26 1996-06-25 Analog Devices, Incorporated Method of making an integrated circuit with complementary isolated bipolar transistors
US5132235A (en) * 1987-08-07 1992-07-21 Siliconix Incorporated Method for fabricating a high voltage MOS transistor
IT1218230B (it) * 1988-04-28 1990-04-12 Sgs Thomson Microelectronics Procedimento per la formazione di un circuito integrato su un substrato di tipo n,comprendente transistori pnp e npn verticali e isolati fra loro
US4951115A (en) * 1989-03-06 1990-08-21 International Business Machines Corp. Complementary transistor structure and method for manufacture
US4910160A (en) * 1989-06-06 1990-03-20 National Semiconductor Corporation High voltage complementary NPN/PNP process
US5369042A (en) * 1993-03-05 1994-11-29 Texas Instruments Incorporated Enhanced performance bipolar transistor process
JP3409548B2 (ja) 1995-12-12 2003-05-26 ソニー株式会社 半導体装置の製造方法
US6977420B2 (en) * 1998-09-30 2005-12-20 National Semiconductor Corporation ESD protection circuit utilizing floating lateral clamp diodes
US11404540B2 (en) 2019-10-01 2022-08-02 Analog Devices International Unlimited Company Bipolar junction transistor, and a method of forming a collector for a bipolar junction transistor
US11355585B2 (en) 2019-10-01 2022-06-07 Analog Devices International Unlimited Company Bipolar junction transistor, and a method of forming a charge control structure for a bipolar junction transistor
US11563084B2 (en) 2019-10-01 2023-01-24 Analog Devices International Unlimited Company Bipolar junction transistor, and a method of forming an emitter for a bipolar junction transistor

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL297820A (xx) * 1962-10-05
US3327182A (en) * 1965-06-14 1967-06-20 Westinghouse Electric Corp Semiconductor integrated circuit structure and method of making the same
US3391035A (en) * 1965-08-20 1968-07-02 Westinghouse Electric Corp Method of making p-nu-junction devices by diffusion
US3412295A (en) * 1965-10-19 1968-11-19 Sprague Electric Co Monolithic structure with three-region complementary transistors
US3449643A (en) * 1966-09-09 1969-06-10 Hitachi Ltd Semiconductor integrated circuit device
US3502951A (en) * 1968-01-02 1970-03-24 Singer Co Monolithic complementary semiconductor device

Also Published As

Publication number Publication date
CH477765A (de) 1969-08-31
BR6794062D0 (pt) 1973-12-27
DK122554B (da) 1972-03-13
ES346217A1 (es) 1969-03-16
BE705379A (xx) 1968-04-19
SE334949B (xx) 1971-05-10
NO120746B (xx) 1970-11-30
GB1206427A (en) 1970-09-23
DE1614286B2 (de) 1975-07-17
US3702428A (en) 1972-11-07
DE1614286A1 (de) 1970-06-25
NL6614858A (xx) 1968-04-22
AT280350B (de) 1970-04-10

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Legal Events

Date Code Title Description
V1 Lapsed because of non-payment of the annual fee
NL80 Information provided on patent owner name for an already discontinued patent

Owner name: PHILIPS