MX370926B - Pixel de resolucion variable. - Google Patents

Pixel de resolucion variable.

Info

Publication number
MX370926B
MX370926B MX2017002981A MX2017002981A MX370926B MX 370926 B MX370926 B MX 370926B MX 2017002981 A MX2017002981 A MX 2017002981A MX 2017002981 A MX2017002981 A MX 2017002981A MX 370926 B MX370926 B MX 370926B
Authority
MX
Mexico
Prior art keywords
region
light sensitive
storage
resolution pixel
variable resolution
Prior art date
Application number
MX2017002981A
Other languages
English (en)
Other versions
MX2017002981A (es
Inventor
Cohen David
TADMOR Erez
Yahav Giora
Original Assignee
Microsoft Technology Licensing Llc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Microsoft Technology Licensing Llc filed Critical Microsoft Technology Licensing Llc
Publication of MX2017002981A publication Critical patent/MX2017002981A/es
Publication of MX370926B publication Critical patent/MX370926B/es

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14625—Optical elements or arrangements associated with the device
    • H01L27/14627—Microlenses
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
    • G01S17/00—Systems using the reflection or reradiation of electromagnetic waves other than radio waves, e.g. lidar systems
    • G01S17/02—Systems using the reflection of electromagnetic waves other than radio waves
    • G01S17/06—Systems determining position data of a target
    • G01S17/08—Systems determining position data of a target for measuring distance only
    • G01S17/32—Systems determining position data of a target for measuring distance only using transmission of continuous waves, whether amplitude-, frequency-, or phase-modulated, or unmodulated
    • G01S17/36—Systems determining position data of a target for measuring distance only using transmission of continuous waves, whether amplitude-, frequency-, or phase-modulated, or unmodulated with phase comparison between the received signal and the contemporaneously transmitted signal
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
    • G01S17/00—Systems using the reflection or reradiation of electromagnetic waves other than radio waves, e.g. lidar systems
    • G01S17/88—Lidar systems specially adapted for specific applications
    • G01S17/89—Lidar systems specially adapted for specific applications for mapping or imaging
    • G01S17/894—3D imaging with simultaneous measurement of time-of-flight at a 2D array of receiver pixels, e.g. time-of-flight cameras or flash lidar
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
    • G01S3/00—Direction-finders for determining the direction from which infrasonic, sonic, ultrasonic, or electromagnetic waves, or particle emission, not having a directional significance, are being received
    • G01S3/78—Direction-finders for determining the direction from which infrasonic, sonic, ultrasonic, or electromagnetic waves, or particle emission, not having a directional significance, are being received using electromagnetic waves other than radio waves
    • G01S3/781—Details
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
    • G01S7/00—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00
    • G01S7/48—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00 of systems according to group G01S17/00
    • G01S7/481—Constructional features, e.g. arrangements of optical elements
    • G01S7/4816—Constructional features, e.g. arrangements of optical elements of receivers alone
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
    • G01S7/00—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00
    • G01S7/48—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00 of systems according to group G01S17/00
    • G01S7/491—Details of non-pulse systems
    • G01S7/4912—Receivers
    • G01S7/4913—Circuits for detection, sampling, integration or read-out
    • G01S7/4914—Circuits for detection, sampling, integration or read-out of detector arrays, e.g. charge-transfer gates
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
    • G01S7/00—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00
    • G01S7/48—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00 of systems according to group G01S17/00
    • G01S7/491—Details of non-pulse systems
    • G01S7/4912—Receivers
    • G01S7/4915—Time delay measurement, e.g. operational details for pixel components; Phase measurement
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14603—Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
    • H01L27/14607—Geometry of the photosensitive area
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
    • H01L27/14612—Pixel-elements with integrated switching, control, storage or amplification elements involving a transistor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14643—Photodiode arrays; MOS imagers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/148—Charge coupled imagers
    • H01L27/14806—Structural or functional details thereof
    • H01L27/14812—Special geometry or disposition of pixel-elements, address lines or gate-electrodes
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N13/00—Stereoscopic video systems; Multi-view video systems; Details thereof
    • H04N13/20—Image signal generators
    • H04N13/204—Image signal generators using stereoscopic image cameras
    • H04N13/207—Image signal generators using stereoscopic image cameras using a single 2D image sensor
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
    • H04N23/60—Control of cameras or camera modules
    • H04N23/667—Camera operation mode switching, e.g. between still and video, sport and normal or high- and low-resolution modes
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/40—Extracting pixel data from image sensors by controlling scanning circuits, e.g. by modifying the number of pixels sampled or to be sampled
    • H04N25/46—Extracting pixel data from image sensors by controlling scanning circuits, e.g. by modifying the number of pixels sampled or to be sampled by combining or binning pixels
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H04N25/771—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising storage means other than floating diffusion

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Remote Sensing (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Signal Processing (AREA)
  • Multimedia (AREA)
  • Computer Networks & Wireless Communication (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Optical Radar Systems And Details Thereof (AREA)

Abstract

Un fotosensor con una diversidad de pixeles fotosensibles en el que cada pixel comprende una región fotosensible y una variedad de regiones de almacenamiento para acumular foto-carga generada en la región fotosensible, una compuerta de transferencia para cada región de almacenamiento que es electrizable, de manera selectiva, para transferir la foto-carga desde la región fotosensible a la región de almacenamiento, y una matriz de microlentes, que para cada región de almacenamiento, dirige una porción diferente de luz incidental sobre el pixel a una región de la región fotosensible más próxima a la región de almacenamiento que a otras regiones de almacenamiento.
MX2017002981A 2014-09-08 2015-09-08 Pixel de resolucion variable. MX370926B (es)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US14/479,381 US9826214B2 (en) 2014-09-08 2014-09-08 Variable resolution pixel
PCT/US2015/048775 WO2016040219A1 (en) 2014-09-08 2015-09-08 Variable resolution pixel

Publications (2)

Publication Number Publication Date
MX2017002981A MX2017002981A (es) 2017-06-19
MX370926B true MX370926B (es) 2020-01-03

Family

ID=54147328

Family Applications (1)

Application Number Title Priority Date Filing Date
MX2017002981A MX370926B (es) 2014-09-08 2015-09-08 Pixel de resolucion variable.

Country Status (12)

Country Link
US (1) US9826214B2 (es)
EP (1) EP3192100B1 (es)
JP (1) JP6661617B2 (es)
KR (1) KR102451868B1 (es)
CN (1) CN106688099B (es)
AU (1) AU2015315416B2 (es)
BR (1) BR112017002841B1 (es)
CA (1) CA2959702C (es)
ES (1) ES2687378T3 (es)
MX (1) MX370926B (es)
RU (1) RU2699313C2 (es)
WO (1) WO2016040219A1 (es)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8547428B1 (en) * 2006-11-02 2013-10-01 SeeScan, Inc. Pipe mapping system
WO2014207788A1 (ja) * 2013-06-27 2014-12-31 パナソニックＩｐマネジメント株式会社 固体撮像素子及び測距撮像装置
CN107710742B (zh) * 2015-07-08 2020-10-27 索尼半导体解决方案公司 固态成像元件、驱动方法和电子设备
KR102645722B1 (ko) 2016-10-27 2024-03-08 삼성디스플레이 주식회사 렌즈 패널 및 이를 포함하는 표시 장치
WO2018186329A1 (ja) * 2017-04-06 2018-10-11 パナソニックＩｐマネジメント株式会社 撮像装置、およびそれに用いられる固体撮像装置
JP2018207446A (ja) * 2017-06-09 2018-12-27 オリンパス株式会社 固体撮像素子，当該固体撮像素子を用いた観察装置，固体撮像素子の駆動方法及び駆動用プログラム
KR101980613B1 (ko) * 2017-08-16 2019-05-21 선전 구딕스 테크놀로지 컴퍼니, 리미티드 이미지 센서 회로 및 깊이 이미지 센서 시스템
JP7308830B2 (ja) 2017-12-13 2023-07-14 マジック リープ， インコーポレイテッド コンピュータビジョンアプリケーションのためのグロバールシャッタピクセル回路および方法
CN108259744B (zh) * 2018-01-24 2020-06-23 北京图森智途科技有限公司 图像采集控制方法及其装置、图像采集***和tof相机
US10598936B1 (en) * 2018-04-23 2020-03-24 Facebook Technologies, Llc Multi-mode active pixel sensor
JP7115390B2 (ja) * 2019-03-28 2022-08-09 株式会社デンソー 測距装置
EP4004587A4 (en) * 2019-07-31 2023-08-16 Opsys Tech Ltd. HIGH DEFINITION SOLID STATE LIDAR TRANSMITTER
CN110336938B (zh) * 2019-08-12 2021-02-26 浙江大华技术股份有限公司 光敏组件、图像采集装置、镜头驱动方法、存储介质
US11463634B2 (en) * 2020-04-07 2022-10-04 Caeleste Cvba Charge domain binning in a MOS pixel
FR3110706B1 (fr) * 2020-05-20 2022-07-08 Commissariat Energie Atomique Dispositif de détection amélioré et système lidar associé

Family Cites Families (34)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5949483A (en) * 1994-01-28 1999-09-07 California Institute Of Technology Active pixel sensor array with multiresolution readout
US5867215A (en) 1995-04-11 1999-02-02 Eastman Kodak Company Image sensor having multiple storage wells per pixel
US6331911B1 (en) * 1998-02-08 2001-12-18 3Dv Systems Ltd. Large aperture optical image shutter
DE69827529T2 (de) 1998-09-28 2005-11-10 3Dv Systems Ltd. Entfernungsmessung mittels kamera
JP2003218332A (ja) 2002-01-22 2003-07-31 Sony Corp 固体撮像素子
US7554587B2 (en) * 2003-03-11 2009-06-30 Fujifilm Corporation Color solid-state image pickup device
US20050157194A1 (en) 2004-01-06 2005-07-21 Altice Peter P.Jr. Imager device with dual storage nodes
US7244918B2 (en) 2005-08-30 2007-07-17 Micron Technology, Inc. Method and apparatus providing a two-way shared storage gate on a four-way shared pixel
US7283609B2 (en) 2005-11-10 2007-10-16 General Electric Company CT detector photodiode having multiple charge storage devices
US7705869B2 (en) * 2007-05-14 2010-04-27 Seiko Epson Corporation Light shielding member, a line head and an image forming apparatus using the line head
JP4909924B2 (ja) * 2007-05-23 2012-04-04 パナソニック株式会社 固体撮像装置及びカメラ
JP2009047475A (ja) * 2007-08-15 2009-03-05 Hamamatsu Photonics Kk 固体撮像素子
US7924333B2 (en) * 2007-08-17 2011-04-12 Aptina Imaging Corporation Method and apparatus providing shared pixel straight gate architecture
CN102099703A (zh) * 2007-12-19 2011-06-15 微软国际控股私有有限公司 3d照相机及其选通方法
KR20090118795A (ko) * 2008-05-13 2009-11-18 삼성전자주식회사 이중 트랜스퍼 게이트를 구비한 거리측정 센서 및 그를구비한 입체 컬러 이미지 센서
US8730382B2 (en) * 2008-06-04 2014-05-20 Honda Motor Co., Ltd. Charge accumulating and splitting imaging device
WO2010007594A1 (en) 2008-07-17 2010-01-21 Microsoft International Holdings B.V. Cmos photogate 3d camera system having improved charge sensing cell and pixel geometry
KR20100054540A (ko) * 2008-11-14 2010-05-25 삼성전자주식회사 픽셀 회로, 광전 변환장치, 및 이를 포함하는 이미지 센싱 시스템
KR101543664B1 (ko) * 2008-12-08 2015-08-12 삼성전자주식회사 픽셀 어레이 및 이를 포함하는 입체 영상 센서
US8218068B2 (en) * 2009-04-01 2012-07-10 Omnivision Technologies, Inc. Exposing pixel groups in producing digital images
KR101648353B1 (ko) * 2009-09-25 2016-08-17 삼성전자 주식회사 거리 센서를 포함하는 이미지 센서
JP5740413B2 (ja) 2010-01-06 2015-06-24 メサ・イメージング・アー・ゲーＭｅｓａ Ｉｍａｇｉｎｇ Ａｇ ピクセルアレイと記憶アレイを別個に備える復調センサ
GB2477083A (en) 2010-01-13 2011-07-27 Cmosis Nv Pixel structure with multiple transfer gates to improve dynamic range
US20120154535A1 (en) * 2010-12-15 2012-06-21 Microsoft Corporation Capturing gated and ungated light in the same frame on the same photosurface
JP2012129425A (ja) * 2010-12-16 2012-07-05 Canon Inc マトリクス基板、検出装置、検出システム、及び、検出装置の駆動方法
US8785831B2 (en) * 2011-01-05 2014-07-22 Luxima Technology LLC Image sensors and methods with high speed global shutter pixels
US8952310B2 (en) * 2011-02-04 2015-02-10 Aptina Imaging Corporation Plasmonic light sensors
KR101802243B1 (ko) * 2011-05-06 2017-11-29 삼성전자주식회사 비행 시간 방식의 거리 측정 센서와 이를 포함하는 반도체 장치
US8642938B2 (en) 2012-01-13 2014-02-04 Omnivision Technologies, Inc. Shared time of flight pixel
US8693731B2 (en) * 2012-01-17 2014-04-08 Leap Motion, Inc. Enhanced contrast for object detection and characterization by optical imaging
US8686342B2 (en) * 2012-04-09 2014-04-01 Omnivision Technologies, Inc. Double-sided image sensor formed on a single semiconductor wafer die
US9752928B2 (en) 2012-07-24 2017-09-05 Forza Silicon Corporation Implement multiple pixel output for photodiode size pixels
US9851245B2 (en) 2012-11-06 2017-12-26 Microsoft Technology Licensing, Llc Accumulating charge from multiple imaging exposure periods
US9147096B2 (en) * 2012-11-13 2015-09-29 Hand Held Products, Inc. Imaging apparatus having lens element

Also Published As

Publication number Publication date
CN106688099A (zh) 2017-05-17
JP2017527222A (ja) 2017-09-14
EP3192100B1 (en) 2018-06-27
CA2959702C (en) 2023-06-27
RU2699313C2 (ru) 2019-09-04
CN106688099B (zh) 2019-10-01
RU2017106894A (ru) 2018-09-03
US9826214B2 (en) 2017-11-21
RU2017106894A3 (es) 2019-03-28
EP3192100A1 (en) 2017-07-19
CA2959702A1 (en) 2016-03-17
BR112017002841A2 (pt) 2017-12-19
AU2015315416B2 (en) 2020-07-09
MX2017002981A (es) 2017-06-19
WO2016040219A1 (en) 2016-03-17
KR102451868B1 (ko) 2022-10-06
ES2687378T3 (es) 2018-10-24
BR112017002841B1 (pt) 2022-09-13
KR20170053697A (ko) 2017-05-16
AU2015315416A1 (en) 2017-03-09
JP6661617B2 (ja) 2020-03-11
US20160073088A1 (en) 2016-03-10

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