JP6661617B2 - 光センサ及びカメラ - Google Patents
光センサ及びカメラ Download PDFInfo
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- JP6661617B2 JP6661617B2 JP2017513116A JP2017513116A JP6661617B2 JP 6661617 B2 JP6661617 B2 JP 6661617B2 JP 2017513116 A JP2017513116 A JP 2017513116A JP 2017513116 A JP2017513116 A JP 2017513116A JP 6661617 B2 JP6661617 B2 JP 6661617B2
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- H—ELECTRICITY
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- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N13/00—Stereoscopic video systems; Multi-view video systems; Details thereof
- H04N13/20—Image signal generators
- H04N13/204—Image signal generators using stereoscopic image cameras
- H04N13/207—Image signal generators using stereoscopic image cameras using a single 2D image sensor
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
- G01S17/00—Systems using the reflection or reradiation of electromagnetic waves other than radio waves, e.g. lidar systems
- G01S17/02—Systems using the reflection of electromagnetic waves other than radio waves
- G01S17/06—Systems determining position data of a target
- G01S17/08—Systems determining position data of a target for measuring distance only
- G01S17/32—Systems determining position data of a target for measuring distance only using transmission of continuous waves, whether amplitude-, frequency-, or phase-modulated, or unmodulated
- G01S17/36—Systems determining position data of a target for measuring distance only using transmission of continuous waves, whether amplitude-, frequency-, or phase-modulated, or unmodulated with phase comparison between the received signal and the contemporaneously transmitted signal
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
- G01S17/00—Systems using the reflection or reradiation of electromagnetic waves other than radio waves, e.g. lidar systems
- G01S17/88—Lidar systems specially adapted for specific applications
- G01S17/89—Lidar systems specially adapted for specific applications for mapping or imaging
- G01S17/894—3D imaging with simultaneous measurement of time-of-flight at a 2D array of receiver pixels, e.g. time-of-flight cameras or flash lidar
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
- G01S3/00—Direction-finders for determining the direction from which infrasonic, sonic, ultrasonic, or electromagnetic waves, or particle emission, not having a directional significance, are being received
- G01S3/78—Direction-finders for determining the direction from which infrasonic, sonic, ultrasonic, or electromagnetic waves, or particle emission, not having a directional significance, are being received using electromagnetic waves other than radio waves
- G01S3/781—Details
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
- G01S7/00—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00
- G01S7/48—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00 of systems according to group G01S17/00
- G01S7/481—Constructional features, e.g. arrangements of optical elements
- G01S7/4816—Constructional features, e.g. arrangements of optical elements of receivers alone
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
- G01S7/00—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00
- G01S7/48—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00 of systems according to group G01S17/00
- G01S7/491—Details of non-pulse systems
- G01S7/4912—Receivers
- G01S7/4913—Circuits for detection, sampling, integration or read-out
- G01S7/4914—Circuits for detection, sampling, integration or read-out of detector arrays, e.g. charge-transfer gates
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
- G01S7/00—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00
- G01S7/48—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00 of systems according to group G01S17/00
- G01S7/491—Details of non-pulse systems
- G01S7/4912—Receivers
- G01S7/4915—Time delay measurement, e.g. operational details for pixel components; Phase measurement
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
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- H01L27/144—Devices controlled by radiation
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
- H01L27/14612—Pixel-elements with integrated switching, control, storage or amplification elements involving a transistor
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14625—Optical elements or arrangements associated with the device
- H01L27/14627—Microlenses
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/148—Charge coupled imagers
- H01L27/14806—Structural or functional details thereof
- H01L27/14812—Special geometry or disposition of pixel-elements, address lines or gate-electrodes
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
- H04N23/60—Control of cameras or camera modules
- H04N23/667—Camera operation mode switching, e.g. between still and video, sport and normal or high- and low-resolution modes
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/40—Extracting pixel data from image sensors by controlling scanning circuits, e.g. by modifying the number of pixels sampled or to be sampled
- H04N25/46—Extracting pixel data from image sensors by controlling scanning circuits, e.g. by modifying the number of pixels sampled or to be sampled by combining or binning pixels
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
- H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
- H04N25/771—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising storage means other than floating diffusion
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- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Radar, Positioning & Navigation (AREA)
- Remote Sensing (AREA)
- Signal Processing (AREA)
- Multimedia (AREA)
- Computer Networks & Wireless Communication (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
- Optical Radar Systems And Details Thereof (AREA)
Description
Claims (15)
- 基板上に形成された複数のピクセルを持つ光センサであって、各ピクセルが、
その中で入射光が光電荷キャリアを生成する感光領域と、
前記感光領域内で生成された光電荷キャリアを蓄積する複数の蓄積領域と、
前記複数の蓄積領域の各蓄積領域に付随する転送ゲートであり、該転送ゲートに転送電圧が印加されることにより、前記感光領域内の光電荷を該蓄積領域にドリフトさせるように帯電可能な転送ゲートと、
前記複数の蓄積領域の各蓄積領域に対して少なくとも1つのマイクロレンズを有するマイクロレンズのアレイであり、該少なくとも1つのマイクロレンズは、該少なくとも1つのマイクロレンズに入射する光を、前記複数の蓄積領域のうちの他の蓄積領域に対してよりも該蓄積領域に対して近い前記感光領域の領域に導く、マイクロレンズのアレイと
を有する、
光センサ。 - 前記マイクロレンズのアレイは、各蓄積領域に対して単一のマイクロレンズを有する、請求項1に記載の光センサ。
- 前記マイクロレンズのアレイは回転対称性を示す、請求項1又は2に記載の光センサ。
- 前記回転対称性は、前記複数の蓄積領域の個数に等しい回数を持つ、請求項3に記載の光センサ。
- 前記複数の蓄積領域の個数は2以上である、請求項1乃至4の何れかに記載の光センサ。
- 蓄積領域に付随する転送ゲートを帯電させることで、前記感光領域内で生成された光電荷を該蓄積領域にドリフトさせるコントローラ、を有する請求項1乃至5の何れかに記載の光センサ。
- 前記コントローラは、1つの蓄積領域のみの転送ゲートを転送電圧で帯電させることで、前記感光領域内の実質的にあらゆる位置で生成された光電荷を前記1つの蓄積領域にドリフトさせる、請求項6に記載の光センサ。
- 前記コントローラは、各蓄積領域に付随する転送ゲートを同時に同じ転送電圧で帯電させることで、或る蓄積領域に対して最も近い前記感光領域内の位置で生成された光電荷を該蓄積領域にドリフトさせる、請求項6又は7に記載の光センサ。
- 前記コントローラは、前記基板を帯電させることで、当該光センサをオン及びオフにシャッターする、請求項6乃至8の何れかに記載の光センサ。
- シーンを撮像して前記シーン内のフィーチャまでの距離を決定する飛行時間(TOF)3次元(3D)カメラであって、当該TOF−3Dカメラは、
前記シーンを照らすように光パルスのトレインを送出する光源と、
前記送出された光パルスから前記フィーチャによって反射された光を受ける請求項1乃至5の何れかに記載の光センサと、
各光パルスの後に前記光センサをオン及びオフにシャッターし、複数の異なる露光期間から選択された露光期間の間、前記フィーチャによって反射された前記光パルスからの光によって前記光センサ内のピクセルのフォトダイオード内で生成された光電荷を蓄積させるコントローラと
を有し、
前記コントローラは、異なる蓄積領域内に、異なる露光期間の間に生成された光電荷を蓄積させるように、異なる蓄積領域の転送ゲートを帯電させ、異なる蓄積領域内に蓄積された光電荷の量を前記光センサの同じフレームから決定し、前記量を用いて前記シーン内のフィーチャまでの距離を決定する、
TOF−3Dカメラ。 - 前記異なる露光期間は、前記光パルスのトレイン内の光パルスが送出された時間の後の異なる時間に開始する露光期間を有する、請求項10に記載のTOF−3Dカメラ。
- 前記異なる露光期間は、異なる継続時間を持つ露光期間を有する、請求項10又は11に記載のTOF−3Dカメラ。
- 前記複数の異なる露光期間の個数は2以上であり、前記複数の蓄積領域の個数は、前記複数の異なる露光期間の個数以上である、請求項10乃至12の何れかに記載のTOF−3Dカメラ。
- シーンを撮像して前記シーン内の写真を取得するカメラであって、
前記シーンからの光を受ける請求項8に記載の光センサと、
前記シーンから当該カメラに到達する光の強度を決定する光メータと、
を有し、前記コントローラは、前記光メータによる光の強度の指標に応じて前記転送ゲートの帯電を制御する、カメラ。 - 前記コントローラは、光強度閾値に応じて前記転送ゲートの帯電を制御する、請求項14に記載のカメラ。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US14/479,381 US9826214B2 (en) | 2014-09-08 | 2014-09-08 | Variable resolution pixel |
US14/479,381 | 2014-09-08 | ||
PCT/US2015/048775 WO2016040219A1 (en) | 2014-09-08 | 2015-09-08 | Variable resolution pixel |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2017527222A JP2017527222A (ja) | 2017-09-14 |
JP6661617B2 true JP6661617B2 (ja) | 2020-03-11 |
Family
ID=54147328
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Application Number | Title | Priority Date | Filing Date |
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JP2017513116A Active JP6661617B2 (ja) | 2014-09-08 | 2015-09-08 | 光センサ及びカメラ |
Country Status (12)
Country | Link |
---|---|
US (1) | US9826214B2 (ja) |
EP (1) | EP3192100B1 (ja) |
JP (1) | JP6661617B2 (ja) |
KR (1) | KR102451868B1 (ja) |
CN (1) | CN106688099B (ja) |
AU (1) | AU2015315416B2 (ja) |
BR (1) | BR112017002841B1 (ja) |
CA (1) | CA2959702C (ja) |
ES (1) | ES2687378T3 (ja) |
MX (1) | MX370926B (ja) |
RU (1) | RU2699313C2 (ja) |
WO (1) | WO2016040219A1 (ja) |
Families Citing this family (15)
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US8547428B1 (en) * | 2006-11-02 | 2013-10-01 | SeeScan, Inc. | Pipe mapping system |
JP6160971B2 (ja) * | 2013-06-27 | 2017-07-12 | パナソニックIpマネジメント株式会社 | 固体撮像素子及び測距撮像装置 |
JP6808623B2 (ja) * | 2015-07-08 | 2021-01-06 | ソニーセミコンダクタソリューションズ株式会社 | 固体撮像素子および駆動方法、並びに電子機器 |
KR102645722B1 (ko) | 2016-10-27 | 2024-03-08 | 삼성디스플레이 주식회사 | 렌즈 패널 및 이를 포함하는 표시 장치 |
WO2018186329A1 (ja) * | 2017-04-06 | 2018-10-11 | パナソニックIpマネジメント株式会社 | 撮像装置、およびそれに用いられる固体撮像装置 |
JP2018207446A (ja) * | 2017-06-09 | 2018-12-27 | オリンパス株式会社 | 固体撮像素子,当該固体撮像素子を用いた観察装置,固体撮像素子の駆動方法及び駆動用プログラム |
EP3471086B1 (en) * | 2017-08-16 | 2020-06-10 | Shenzhen Goodix Technology Co., Ltd. | Image sensing circuit and image depth sensing system |
US10804301B2 (en) | 2017-12-13 | 2020-10-13 | Magic Leap, Inc. | Differential pixel circuit and method of computer vision applications |
CN108259744B (zh) * | 2018-01-24 | 2020-06-23 | 北京图森智途科技有限公司 | 图像采集控制方法及其装置、图像采集***和tof相机 |
US10598936B1 (en) * | 2018-04-23 | 2020-03-24 | Facebook Technologies, Llc | Multi-mode active pixel sensor |
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