MX2012005204A - Sistemas y metodos para el procesamiento de peliculas por fusion parcial mediante pulsos no periodicos. - Google Patents
Sistemas y metodos para el procesamiento de peliculas por fusion parcial mediante pulsos no periodicos.Info
- Publication number
- MX2012005204A MX2012005204A MX2012005204A MX2012005204A MX2012005204A MX 2012005204 A MX2012005204 A MX 2012005204A MX 2012005204 A MX2012005204 A MX 2012005204A MX 2012005204 A MX2012005204 A MX 2012005204A MX 2012005204 A MX2012005204 A MX 2012005204A
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- Mexico
- Prior art keywords
- film
- laser
- pulse
- laser pulse
- region
- Prior art date
Links
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Classifications
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
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- H01L21/02664—Aftertreatments
- H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
- H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
- H01L21/02686—Pulsed laser beam
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/352—Working by laser beam, e.g. welding, cutting or boring for surface treatment
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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- H01L21/702—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof of thick-or thin-film circuits or parts thereof
- H01L21/707—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof of thick-or thin-film circuits or parts thereof of thin-film circuits or parts thereof
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- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
- H01L27/127—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement
- H01L27/1274—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement using crystallisation of amorphous semiconductor or recrystallisation of crystalline semiconductor
- H01L27/1285—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement using crystallisation of amorphous semiconductor or recrystallisation of crystalline semiconductor using control of the annealing or irradiation parameters, e.g. using different scanning direction or intensity for different transistors
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- H—ELECTRICITY
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- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
- H01L27/1296—Multistep manufacturing methods adapted to increase the uniformity of device parameters
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/04—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66742—Thin film unipolar transistors
- H01L29/6675—Amorphous silicon or polysilicon transistors
- H01L29/66765—Lateral single gate single channel transistors with inverted structure, i.e. the channel layer is formed after the gate
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78651—Silicon transistors
- H01L29/7866—Non-monocrystalline silicon transistors
- H01L29/78672—Polycrystalline or microcrystalline silicon transistor
- H01L29/78678—Polycrystalline or microcrystalline silicon transistor with inverted-type structure, e.g. with bottom gate
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2101/00—Articles made by soldering, welding or cutting
- B23K2101/36—Electric or electronic devices
- B23K2101/40—Semiconductor devices
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Optics & Photonics (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Ceramic Engineering (AREA)
- High Energy & Nuclear Physics (AREA)
- Plasma & Fusion (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Mechanical Engineering (AREA)
- Electromagnetism (AREA)
- Recrystallisation Techniques (AREA)
- Thin Film Transistor (AREA)
Applications Claiming Priority (10)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US25765709P | 2009-11-03 | 2009-11-03 | |
US25765009P | 2009-11-03 | 2009-11-03 | |
US26408209P | 2009-11-24 | 2009-11-24 | |
US28664309P | 2009-12-15 | 2009-12-15 | |
US29166309P | 2009-12-31 | 2009-12-31 | |
US29148809P | 2009-12-31 | 2009-12-31 | |
US29428810P | 2010-01-12 | 2010-01-12 | |
PCT/US2010/033565 WO2011065992A1 (en) | 2009-11-24 | 2010-05-04 | Systems and methods for non-periodic pulse sequential lateral solidification |
US12/776,756 US8440581B2 (en) | 2009-11-24 | 2010-05-10 | Systems and methods for non-periodic pulse sequential lateral solidification |
PCT/US2010/055106 WO2011056787A1 (en) | 2009-11-03 | 2010-11-02 | Systems and methods for non-periodic pulse partial melt film processing |
Publications (1)
Publication Number | Publication Date |
---|---|
MX2012005204A true MX2012005204A (es) | 2012-09-21 |
Family
ID=46752051
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
MX2012005204A MX2012005204A (es) | 2009-11-03 | 2010-11-02 | Sistemas y metodos para el procesamiento de peliculas por fusion parcial mediante pulsos no periodicos. |
Country Status (5)
Country | Link |
---|---|
JP (2) | JP2013510443A (zh) |
CN (1) | CN102770939B (zh) |
MX (1) | MX2012005204A (zh) |
TW (1) | TWI575571B (zh) |
WO (1) | WO2011056787A1 (zh) |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI528418B (zh) * | 2009-11-30 | 2016-04-01 | 應用材料股份有限公司 | 在半導體應用上的結晶處理 |
KR20150013731A (ko) * | 2012-05-14 | 2015-02-05 | 더 트러스티스 오브 콜롬비아 유니버시티 인 더 시티 오브 뉴욕 | 박막들을 위한 개선된 엑시머 레이저 어닐링 |
JP5788855B2 (ja) * | 2012-11-20 | 2015-10-07 | 株式会社日本製鋼所 | レーザ処理方法およびレーザ処理装置 |
KR101483759B1 (ko) * | 2013-07-19 | 2015-01-19 | 에이피시스템 주식회사 | 멀티 레이저를 이용한 취성 기판 가공 장치 및 방법 |
KR101840520B1 (ko) * | 2014-10-24 | 2018-03-20 | 주식회사 엘지화학 | 배터리용 분리막 커팅 방법 및 이에 의하여 제조된 배터리용 분리막 |
TWI577488B (zh) * | 2014-11-17 | 2017-04-11 | 財團法人工業技術研究院 | 表面加工方法 |
WO2017003754A1 (en) * | 2015-07-02 | 2017-01-05 | Applied Materials, Inc. | Correction of non-uniform patterns using time-shifted exposures |
WO2017120584A1 (en) * | 2016-01-08 | 2017-07-13 | The Trustees Of Columbia University In The City Of New York | Methods and systems for spot beam crystallization |
US9991122B2 (en) * | 2016-08-31 | 2018-06-05 | Micron Technology, Inc. | Methods of forming semiconductor device structures including two-dimensional material structures |
US20200238441A1 (en) * | 2017-10-13 | 2020-07-30 | The Trustees Of Columbia University In The City Of New York | Systems and methods for spot beam and line beam crystallization |
Family Cites Families (31)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02181419A (ja) * | 1989-01-06 | 1990-07-16 | Hitachi Ltd | レーザアニール方法 |
JPH04282869A (ja) * | 1991-03-11 | 1992-10-07 | G T C:Kk | 薄膜半導体装置の製造方法及びこれを実施するための装置 |
JP3322440B2 (ja) * | 1993-06-24 | 2002-09-09 | 三洋電機株式会社 | 薄膜多結晶シリコンの製造方法 |
JP3388042B2 (ja) * | 1994-11-18 | 2003-03-17 | 三菱電機株式会社 | レーザアニーリング方法 |
JPH10256178A (ja) * | 1997-03-07 | 1998-09-25 | Toshiba Corp | レーザ熱処理方法及びその装置 |
JP3343492B2 (ja) * | 1997-04-02 | 2002-11-11 | シャープ株式会社 | 薄膜半導体装置の製造方法 |
JP3201395B2 (ja) * | 1999-11-15 | 2001-08-20 | セイコーエプソン株式会社 | 半導体薄膜の製造方法 |
US6830993B1 (en) * | 2000-03-21 | 2004-12-14 | The Trustees Of Columbia University In The City Of New York | Surface planarization of thin silicon films during and after processing by the sequential lateral solidification method |
JP4353352B2 (ja) * | 2001-05-15 | 2009-10-28 | シャープ株式会社 | 半導体装置及びその製造方法 |
US6645454B2 (en) * | 2001-06-28 | 2003-11-11 | Sharp Laboratories Of America, Inc. | System and method for regulating lateral growth in laser irradiated silicon films |
JP4566503B2 (ja) * | 2001-07-30 | 2010-10-20 | 株式会社半導体エネルギー研究所 | レーザー処理装置並びに半導体装置の作製方法 |
JP3860444B2 (ja) * | 2001-08-28 | 2006-12-20 | 住友重機械工業株式会社 | シリコン結晶化方法とレーザアニール装置 |
JP2003109912A (ja) * | 2001-10-01 | 2003-04-11 | Matsushita Electric Ind Co Ltd | レーザアニール装置 |
US7749818B2 (en) * | 2002-01-28 | 2010-07-06 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method of manufacturing the same |
JP2003347208A (ja) * | 2002-05-27 | 2003-12-05 | Sumitomo Heavy Ind Ltd | アモルファス材料の結晶化方法 |
JP4034165B2 (ja) * | 2002-10-29 | 2008-01-16 | 住友重機械工業株式会社 | レーザを用いた多結晶膜の製造方法 |
DE10301482A1 (de) * | 2003-01-16 | 2004-07-29 | Microlas Lasersystem Gmbh | Vorrichtung und Verfahren zur Kristallisation amorpher Siliziumschichten |
US7318866B2 (en) * | 2003-09-16 | 2008-01-15 | The Trustees Of Columbia University In The City Of New York | Systems and methods for inducing crystallization of thin films using multiple optical paths |
TWI359441B (en) * | 2003-09-16 | 2012-03-01 | Univ Columbia | Processes and systems for laser crystallization pr |
US7364952B2 (en) * | 2003-09-16 | 2008-04-29 | The Trustees Of Columbia University In The City Of New York | Systems and methods for processing thin films |
JP2005333117A (ja) * | 2004-04-23 | 2005-12-02 | Semiconductor Energy Lab Co Ltd | レーザ照射装置及び半導体装置の作製方法 |
JP3977379B2 (ja) * | 2005-03-29 | 2007-09-19 | 株式会社日本製鋼所 | 薄膜材料の結晶化方法及びその装置 |
JP4577114B2 (ja) * | 2005-06-23 | 2010-11-10 | ソニー株式会社 | 薄膜トランジスタの製造方法および表示装置の製造方法 |
KR101132404B1 (ko) * | 2005-08-19 | 2012-04-03 | 삼성전자주식회사 | 다결정 실리콘 박막의 제조 방법 및 이를 포함하는 박막트랜지스터의 제조 방법 |
JP2008041868A (ja) * | 2006-08-04 | 2008-02-21 | Sumitomo Heavy Ind Ltd | 不純物活性化方法及びレーザ照射装置 |
DE102007025942A1 (de) | 2007-06-04 | 2008-12-11 | Coherent Gmbh | Verfahren zur selektiven thermischen Oberflächenbehandlung eines Flächensubstrates |
US20090078940A1 (en) * | 2007-09-26 | 2009-03-26 | Sharp Laboratories Of America, Inc. | Location-controlled crystal seeding |
US7800081B2 (en) * | 2007-11-08 | 2010-09-21 | Applied Materials, Inc. | Pulse train annealing method and apparatus |
CN101919058B (zh) * | 2007-11-21 | 2014-01-01 | 纽约市哥伦比亚大学理事会 | 用于制备外延纹理厚膜的***和方法 |
US8012861B2 (en) * | 2007-11-21 | 2011-09-06 | The Trustees Of Columbia University In The City Of New York | Systems and methods for preparing epitaxially textured polycrystalline films |
WO2009075281A1 (ja) * | 2007-12-13 | 2009-06-18 | Idemitsu Kosan Co., Ltd. | 酸化物半導体を用いた電界効果型トランジスタ及びその製造方法 |
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