MX2012005204A - Sistemas y metodos para el procesamiento de peliculas por fusion parcial mediante pulsos no periodicos. - Google Patents

Sistemas y metodos para el procesamiento de peliculas por fusion parcial mediante pulsos no periodicos.

Info

Publication number: MX2012005204A
Authority: MX; Mexico
Prior art keywords: film; laser; pulse; laser pulse; region
Prior art date: 2009-11-03

Application number

MX2012005204A

Other languages

English (en)

Spanish (es)

Inventor

James S Im

Yikang Deng

Qiongying Hu

Ui-Jin Chung

Alexander B Limanov

Original Assignee

Univ Columbia

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

2009-11-03

Filing date

2010-11-02

Publication date

2012-09-21

2010-05-04 Priority claimed from PCT/US2010/033565 external-priority patent/WO2011065992A1/en

2010-05-10 Priority claimed from US12/776,756 external-priority patent/US8440581B2/en

2010-11-02 Application filed by Univ Columbia filed Critical Univ Columbia

2012-09-21 Publication of MX2012005204A publication Critical patent/MX2012005204A/es

Links

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Classifications

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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
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- H01L21/02664—Aftertreatments
- H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
- H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
- H01L21/02686—Pulsed laser beam
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/08—Devices involving relative movement between laser beam and workpiece
- B23K26/083—Devices involving movement of the workpiece in at least one axial direction
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/352—Working by laser beam, e.g. welding, cutting or boring for surface treatment
- B23K26/354—Working by laser beam, e.g. welding, cutting or boring for surface treatment by melting
- H—ELECTRICITY
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
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- H01L21/02532—Silicon, silicon germanium, germanium
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
- H01L27/127—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement
- H01L27/1274—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement using crystallisation of amorphous semiconductor or recrystallisation of crystalline semiconductor
- H01L27/1285—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement using crystallisation of amorphous semiconductor or recrystallisation of crystalline semiconductor using control of the annealing or irradiation parameters, e.g. using different scanning direction or intensity for different transistors
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- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
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- H01L27/1296—Multistep manufacturing methods adapted to increase the uniformity of device parameters
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/04—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes
- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66742—Thin film unipolar transistors
- H01L29/6675—Amorphous silicon or polysilicon transistors
- H01L29/66765—Lateral single gate single channel transistors with inverted structure, i.e. the channel layer is formed after the gate
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
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- H01L29/7866—Non-monocrystalline silicon transistors
- H01L29/78672—Polycrystalline or microcrystalline silicon transistor
- H01L29/78678—Polycrystalline or microcrystalline silicon transistor with inverted-type structure, e.g. with bottom gate
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2101/00—Articles made by soldering, welding or cutting
- B23K2101/36—Electric or electronic devices
- B23K2101/40—Semiconductor devices

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Engineering & Computer Science (AREA)
Physics & Mathematics (AREA)
Power Engineering (AREA)
Microelectronics & Electronic Packaging (AREA)
Condensed Matter Physics & Semiconductors (AREA)
General Physics & Mathematics (AREA)
Computer Hardware Design (AREA)
Manufacturing & Machinery (AREA)
Optics & Photonics (AREA)
Chemical & Material Sciences (AREA)
Crystallography & Structural Chemistry (AREA)
Ceramic Engineering (AREA)
High Energy & Nuclear Physics (AREA)
Plasma & Fusion (AREA)
Health & Medical Sciences (AREA)
Toxicology (AREA)
Mechanical Engineering (AREA)
Electromagnetism (AREA)
Recrystallisation Techniques (AREA)
Thin Film Transistor (AREA)

MX2012005204A 2009-11-03 2010-11-02 Sistemas y metodos para el procesamiento de peliculas por fusion parcial mediante pulsos no periodicos. MX2012005204A (es)

Applications Claiming Priority (10)

Application Number	Priority Date	Filing Date	Title
US25765709P	2009-11-03	2009-11-03
US25765009P	2009-11-03	2009-11-03
US26408209P	2009-11-24	2009-11-24
US28664309P	2009-12-15	2009-12-15
US29166309P	2009-12-31	2009-12-31
US29148809P	2009-12-31	2009-12-31
US29428810P	2010-01-12	2010-01-12
PCT/US2010/033565 WO2011065992A1 (en)	2009-11-24	2010-05-04	Systems and methods for non-periodic pulse sequential lateral solidification
US12/776,756 US8440581B2 (en)	2009-11-24	2010-05-10	Systems and methods for non-periodic pulse sequential lateral solidification
PCT/US2010/055106 WO2011056787A1 (en)	2009-11-03	2010-11-02	Systems and methods for non-periodic pulse partial melt film processing

Publications (1)

Publication Number	Publication Date
MX2012005204A true MX2012005204A (es)	2012-09-21

Family

ID=46752051

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
MX2012005204A MX2012005204A (es)	2009-11-03	2010-11-02	Sistemas y metodos para el procesamiento de peliculas por fusion parcial mediante pulsos no periodicos.

Country Status (5)

Country	Link
JP (2)	JP2013510443A (zh)
CN (1)	CN102770939B (zh)
MX (1)	MX2012005204A (zh)
TW (1)	TWI575571B (zh)
WO (1)	WO2011056787A1 (zh)

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* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
TWI528418B (zh) *	2009-11-30	2016-04-01	應用材料股份有限公司	在半導體應用上的結晶處理
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