MX156196A - Mejoras en dispositivo semiconductor de energia con seccion de corriente principal y seccion de corriente de emulcion - Google Patents
Mejoras en dispositivo semiconductor de energia con seccion de corriente principal y seccion de corriente de emulcionInfo
- Publication number
- MX156196A MX156196A MX20262384A MX20262384A MX156196A MX 156196 A MX156196 A MX 156196A MX 20262384 A MX20262384 A MX 20262384A MX 20262384 A MX20262384 A MX 20262384A MX 156196 A MX156196 A MX 156196A
- Authority
- MX
- Mexico
- Prior art keywords
- current section
- emultion
- semiconductor device
- energy semiconductor
- main current
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/7815—Vertical DMOS transistors, i.e. VDMOS transistors with voltage or current sensing structure, e.g. emulator section, overcurrent sensing cell
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
- H01L29/7395—Vertical transistors, e.g. vertical IGBT
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/7811—Vertical DMOS transistors, i.e. VDMOS transistors with an edge termination structure
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Thyristors (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US52924083A | 1983-09-06 | 1983-09-06 |
Publications (1)
Publication Number | Publication Date |
---|---|
MX156196A true MX156196A (es) | 1988-07-22 |
Family
ID=24109099
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
MX20262384A MX156196A (es) | 1983-09-06 | 1984-09-05 | Mejoras en dispositivo semiconductor de energia con seccion de corriente principal y seccion de corriente de emulcion |
Country Status (6)
Country | Link |
---|---|
EP (1) | EP0139998B1 (es) |
JP (1) | JPH06105783B2 (es) |
CA (1) | CA1219382A (es) |
DE (1) | DE3462971D1 (es) |
IE (1) | IE55753B1 (es) |
MX (1) | MX156196A (es) |
Families Citing this family (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL8503394A (nl) * | 1985-12-10 | 1987-07-01 | Philips Nv | Stroomaftastschakeling voor een vermogenshalfgeleiderinrichting, in het bijzonder geintegreerde intelligente vermogenshalfgeleiderschakelaar voor met name automobieltoepassingen. |
JPH073854B2 (ja) * | 1985-12-18 | 1995-01-18 | 株式会社日立製作所 | 複合半導体装置 |
US4777579A (en) * | 1988-01-04 | 1988-10-11 | General Electric Company | Integrated current sensor configurations for AC motor drives |
US4980740A (en) * | 1989-03-27 | 1990-12-25 | General Electric Company | MOS-pilot structure for an insulated gate transistor |
US5128823A (en) * | 1989-06-14 | 1992-07-07 | Nippondenso Co., Ltd. | Power semiconductor apparatus |
DE4127033A1 (de) * | 1991-08-16 | 1993-02-18 | Asea Brown Boveri | Mos-gesteuerter thyristor mct |
JP2833610B2 (ja) * | 1991-10-01 | 1998-12-09 | 株式会社デンソー | 絶縁ゲート型バイポーラトランジスタ |
GB9420572D0 (en) * | 1994-10-12 | 1994-11-30 | Philips Electronics Uk Ltd | A protected switch |
JPH09135023A (ja) * | 1995-11-08 | 1997-05-20 | Toshiba Corp | 圧接型半導体装置 |
JP4156717B2 (ja) * | 1998-01-13 | 2008-09-24 | 三菱電機株式会社 | 半導体装置 |
JP2002505525A (ja) * | 1998-02-27 | 2002-02-19 | アーベーベー (シュヴァイツ) アクチェンゲゼルシャフト | 絶縁ゲートバイポーラトランジスタ |
GB9908285D0 (en) * | 1999-04-13 | 1999-06-02 | Koninkl Philips Electronics Nv | A power switching circuit |
GB0019535D0 (en) | 2000-08-10 | 2000-09-27 | Koninkl Philips Electronics Nv | Two-terminal switch circuit and voltage threshold responsive circuit component |
WO2011021076A1 (en) | 2009-08-18 | 2011-02-24 | Freescale Semiconductor, Inc. | Transistor power switch device and method of measuring its characteristics |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4593302B1 (en) * | 1980-08-18 | 1998-02-03 | Int Rectifier Corp | Process for manufacture of high power mosfet laterally distributed high carrier density beneath the gate oxide |
JPS59164253U (ja) * | 1983-04-19 | 1984-11-02 | 東洋電機製造株式会社 | 半導体装置の電極 |
-
1984
- 1984-08-15 IE IE211284A patent/IE55753B1/en not_active IP Right Cessation
- 1984-08-23 CA CA000461634A patent/CA1219382A/en not_active Expired
- 1984-08-25 EP EP19840110162 patent/EP0139998B1/en not_active Expired
- 1984-08-25 DE DE8484110162T patent/DE3462971D1/de not_active Expired
- 1984-09-05 JP JP59184727A patent/JPH06105783B2/ja not_active Expired - Lifetime
- 1984-09-05 MX MX20262384A patent/MX156196A/es unknown
Also Published As
Publication number | Publication date |
---|---|
DE3462971D1 (en) | 1987-05-07 |
EP0139998B1 (en) | 1987-04-01 |
JPS6094772A (ja) | 1985-05-27 |
IE55753B1 (en) | 1991-01-02 |
JPH06105783B2 (ja) | 1994-12-21 |
CA1219382A (en) | 1987-03-17 |
EP0139998A1 (en) | 1985-05-08 |
IE842112L (en) | 1985-03-06 |
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