DE3462971D1 - Power semiconductor device with main current section and emulation current section - Google Patents
Power semiconductor device with main current section and emulation current sectionInfo
- Publication number
- DE3462971D1 DE3462971D1 DE8484110162T DE3462971T DE3462971D1 DE 3462971 D1 DE3462971 D1 DE 3462971D1 DE 8484110162 T DE8484110162 T DE 8484110162T DE 3462971 T DE3462971 T DE 3462971T DE 3462971 D1 DE3462971 D1 DE 3462971D1
- Authority
- DE
- Germany
- Prior art keywords
- current section
- semiconductor device
- power semiconductor
- emulation
- main current
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/7815—Vertical DMOS transistors, i.e. VDMOS transistors with voltage or current sensing structure, e.g. emulator section, overcurrent sensing cell
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
- H01L29/7395—Vertical transistors, e.g. vertical IGBT
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/7811—Vertical DMOS transistors, i.e. VDMOS transistors with an edge termination structure
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Thyristors (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US52924083A | 1983-09-06 | 1983-09-06 |
Publications (1)
Publication Number | Publication Date |
---|---|
DE3462971D1 true DE3462971D1 (en) | 1987-05-07 |
Family
ID=24109099
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE8484110162T Expired DE3462971D1 (en) | 1983-09-06 | 1984-08-25 | Power semiconductor device with main current section and emulation current section |
Country Status (6)
Country | Link |
---|---|
EP (1) | EP0139998B1 (de) |
JP (1) | JPH06105783B2 (de) |
CA (1) | CA1219382A (de) |
DE (1) | DE3462971D1 (de) |
IE (1) | IE55753B1 (de) |
MX (1) | MX156196A (de) |
Families Citing this family (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL8503394A (nl) * | 1985-12-10 | 1987-07-01 | Philips Nv | Stroomaftastschakeling voor een vermogenshalfgeleiderinrichting, in het bijzonder geintegreerde intelligente vermogenshalfgeleiderschakelaar voor met name automobieltoepassingen. |
JPH073854B2 (ja) * | 1985-12-18 | 1995-01-18 | 株式会社日立製作所 | 複合半導体装置 |
US4777579A (en) * | 1988-01-04 | 1988-10-11 | General Electric Company | Integrated current sensor configurations for AC motor drives |
US4980740A (en) * | 1989-03-27 | 1990-12-25 | General Electric Company | MOS-pilot structure for an insulated gate transistor |
US5128823A (en) * | 1989-06-14 | 1992-07-07 | Nippondenso Co., Ltd. | Power semiconductor apparatus |
DE4127033A1 (de) * | 1991-08-16 | 1993-02-18 | Asea Brown Boveri | Mos-gesteuerter thyristor mct |
JP2833610B2 (ja) * | 1991-10-01 | 1998-12-09 | 株式会社デンソー | 絶縁ゲート型バイポーラトランジスタ |
GB9420572D0 (en) * | 1994-10-12 | 1994-11-30 | Philips Electronics Uk Ltd | A protected switch |
JPH09135023A (ja) * | 1995-11-08 | 1997-05-20 | Toshiba Corp | 圧接型半導体装置 |
JP4156717B2 (ja) * | 1998-01-13 | 2008-09-24 | 三菱電機株式会社 | 半導体装置 |
JP2002505525A (ja) * | 1998-02-27 | 2002-02-19 | アーベーベー (シュヴァイツ) アクチェンゲゼルシャフト | 絶縁ゲートバイポーラトランジスタ |
GB9908285D0 (en) * | 1999-04-13 | 1999-06-02 | Koninkl Philips Electronics Nv | A power switching circuit |
GB0019535D0 (en) | 2000-08-10 | 2000-09-27 | Koninkl Philips Electronics Nv | Two-terminal switch circuit and voltage threshold responsive circuit component |
WO2011021076A1 (en) | 2009-08-18 | 2011-02-24 | Freescale Semiconductor, Inc. | Transistor power switch device and method of measuring its characteristics |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4593302B1 (en) * | 1980-08-18 | 1998-02-03 | Int Rectifier Corp | Process for manufacture of high power mosfet laterally distributed high carrier density beneath the gate oxide |
JPS59164253U (ja) * | 1983-04-19 | 1984-11-02 | 東洋電機製造株式会社 | 半導体装置の電極 |
-
1984
- 1984-08-15 IE IE211284A patent/IE55753B1/en not_active IP Right Cessation
- 1984-08-23 CA CA000461634A patent/CA1219382A/en not_active Expired
- 1984-08-25 EP EP19840110162 patent/EP0139998B1/de not_active Expired
- 1984-08-25 DE DE8484110162T patent/DE3462971D1/de not_active Expired
- 1984-09-05 JP JP59184727A patent/JPH06105783B2/ja not_active Expired - Lifetime
- 1984-09-05 MX MX20262384A patent/MX156196A/es unknown
Also Published As
Publication number | Publication date |
---|---|
EP0139998B1 (de) | 1987-04-01 |
MX156196A (es) | 1988-07-22 |
JPS6094772A (ja) | 1985-05-27 |
IE55753B1 (en) | 1991-01-02 |
JPH06105783B2 (ja) | 1994-12-21 |
CA1219382A (en) | 1987-03-17 |
EP0139998A1 (de) | 1985-05-08 |
IE842112L (en) | 1985-03-06 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8328 | Change in the person/name/address of the agent |
Free format text: VOIGT, R., DIPL.-ING., PAT.-ANW., 6232 BAD SODEN |
|
8339 | Ceased/non-payment of the annual fee |