LU101198B1 - A monolithically integrated dual-band RF power amplifier - Google Patents

A monolithically integrated dual-band RF power amplifier Download PDF

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Publication number
LU101198B1
LU101198B1 LU101198A LU101198A LU101198B1 LU 101198 B1 LU101198 B1 LU 101198B1 LU 101198 A LU101198 A LU 101198A LU 101198 A LU101198 A LU 101198A LU 101198 B1 LU101198 B1 LU 101198B1
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LU
Luxembourg
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power amplifier
route
stage
amplifier module
transformer
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LU101198A
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German (de)
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Jianguo Ma
Shaohua Zhou
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Univ Tianjin
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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/56—Modifications of input or output impedances, not otherwise provided for
    • H03F1/565—Modifications of input or output impedances, not otherwise provided for using inductive elements
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
    • H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
    • H03F3/195—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only in integrated circuits
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
    • H03F3/211—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only using a combination of several amplifiers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
    • H03F3/213—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only in integrated circuits
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F3/24—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages
    • H03F3/245—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages with semiconductor devices only
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/111—Indexing scheme relating to amplifiers the amplifier being a dual or triple band amplifier, e.g. 900 and 1800 MHz, e.g. switched or not switched, simultaneously or not
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/451—Indexing scheme relating to amplifiers the amplifier being a radio frequency amplifier

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Amplifiers (AREA)

Abstract

The present invention discloses a monolithically integrated dual-frequency RF power amplifier, wherein an input transformer is connected between an input terminal of the first-route first-stage power amplifier unit module and an input terminal of the second-route first-stage power amplifier unit module, an output transformer is connected between an output terminal of the first-route second-stage power amplifier unit module and an output terminal of the second-route second-stage power amplifier unit module, wherein a first-route interstage transformer is connected between an output terminal of the first-route first-stage power amplifier unit module and an input terminal of the first-route second-stage power amplifier unit module, and a second-route interstage transformer is connected between an output terminal of the second-route first-stage power amplifier unit module and an input terminal of the second-route second-stage power amplifier unit module. The present invention not only supports the operation of a single frequency band and ensures the optimal performance of each frequency band without increasing the circuit area, but also supports the operation of two frequency bands at the same time. (Fig. 1)

Description

A MONOLITHICALLY INTEGRATED DUAL-BAND RF POWER AMPLIFIER
Technical field
The present invention belongs to the technical field of wireless communication power amplifiers, and in particular relates to the field of complementary metal oxide semiconductor (CMOS) RF power amplifiers, and more particularly relates to a monolithically integrated dual-band RF power amplifier.
Technical background
Nowadays, the rapid development of the wireless communication industry has become the biggest highlight of the information industry, and the design requirements for wireless communication systems are becoming more and more. In order to reduce the volume and cost, many wireless devices not only need to take into account multiple frequency bands within the same standard, but also need to be compatible between different standards, which brings the demand for dual-band and multi-band microwave circuits and subsystems. A power amplifier is located at an end of transmitter in a wireless communication system, and its output power determines the length of the transmission distance, so the power amplifier is a very important part of the communication system. RF power amplifiers are widely used in the fields of satellite communication, radar, and various industrial equipments etc. With the development of new standards and new technologies in wireless communication and military fields, and the diversified development needs of communication and various wireless devices, the performance requirements of wireless communication systems for RF power amplifiers have also increased accordingly. In pursuit of the optimization of system performance and price, dual-band or multi-band power amplifiers have become a hot research direction.
The current dual-band power amplifiers are mainly divided into the following three categories. The first category is a dual-band power amplifier based on unit selection. This power amplifier structure is realized by connecting two single-band power amplifiers operating at different frequencies in parallel, and an electronic switch is used to switch the power amplifier units operating at different frequencies in the power amplifier module. However, such a power amplifier must use two power amplifier units to realize the dual-band function. Moreover, the required DC power consumption is large and the occupied area is large, which lead to an increase in the costs of the heat dissipation system and the circuit, respectively, and the operations at the two frequency bands cannot be simultaneously supported. The second category is a power amplifier realizing dual frequency bands based on the concept of reconfigurable load. The biggest feature of this power amplifier is to use one power amplifier unit and combine the reconfigurable characteristics of MEMS switches, varactor diodes and other devices, to achieve a dual-band power amplifier structure, but the operations at the two frequency bands cannot be simultaneously supported. At the same time, due to the reliability issue existing in the reconfigurable components, the reliability and performance of the dual-band power amplifier are directly affected. The third category is a dual-band power amplifier based on a dual-band impedance matching network. The biggest feature of this structure is achieved by using a matching circuit that can simultaneously operate at two frequency bands. Therefore, it can not only reduce system power consumption and circuit design cost to a certain extent, but can also realize the simultaneous operation of two frequency bands with only one circuit.
The dual-band power amplifier based on unit selection and the power amplifier realizing dual frequency bands based on the concept of reconfigurable load can achieve the best performance at each frequency band, but have the disadvantage of a large occupied area; the dual-band power amplifier based on the dual-band impedance matching network currently has the trade-off between the indicators of the two frequency bands and is unable to achieve the optimal performance in respective frequency bands. Therefore, one of the difficulties of the current dual-band RF power amplifiers is how to simultaneously achieve the optimal performance at two frequency bands under the condition that the area does not increase.
Summary of the invention
An object of the present invention is to overcome the deficiencies in the prior art and provide a monolithically integrated dual-band RF power amplifier that not only supports the operation of a single frequency band and ensures the optimal performance of each frequency band without increasing the circuit area, but also supports the operation of two frequency bands at the same time.
The object of the present invention is achieved by the following technical solutions. A monolithically integrated dual-frequency RF power amplifier of the present invention comprises a first-route first-stage power amplifier unit module, a first-route second-stage power amplifier unit module, a second-route first-stage power amplifier unit module and a second-route second-stage power amplifier unit module, wherein an input transformer is connected between an input terminal of the first-route first-stage power amplifier unit module and an input terminal of the second-route first-stage power amplifier unit module, and an output transformer is connected between an output terminal of the first-route second-stage power amplifier unit module and an output terminal of the second-route second-stage power amplifier unit module, wherein a first-route interstage transformer is connected between an output terminal of the first-route first-stage power amplifier unit module and an input terminal of the first-route second-stage power amplifier unit module, and a second-route interstage transformer is connected between an output terminal of the second-route first-stage power amplifier unit module and an input terminal of the second-route second-stage power amplifier unit module; the primary coil of the input transformer is composed of four inductors connected in series, and the primary coil is connected to an input port; the secondary coil of the input transformer is composed of four inductors, wherein two inductors are connected between positive input terminals of the first-route first-stage power amplifier unit module and the second-route first-stage power amplifier unit module, and the other two inductors are connected between inverting input terminals of the first-route first-stage power amplifier unit module and the second-route first-stage power amplifier unit module; the secondary coil of the output transformer is composed of four inductors connected in series, and the secondary coil is connected to an output port; the primary coil of the output transformer is composed of four inductors, wherein two inductors are connected between positive output terminals of the first-route second-stage power amplifier unit module and the second-route second-stage power amplifier unit module, and the other two inductors are connected between inverting output terminals of the first-route second-stage power amplifier unit module and the second-route second-stage power amplifier unit module; a first control switch is connected between the positive output terminal and the inverting output terminal of the first-route second-stage power amplifier unit module, and a second control switch is connected between the positive output terminal and the inverting output terminal of the second-route second-stage power amplifier unit module; the primary coil and the secondary coil of the first-route interstage transformer are each composed of two inductors, the primary coil is connected between a positive output terminal and an inverting output terminal of the first-route first-stage power amplifier unit module, and the secondary coil is connected between a positive input terminal and an inverting input terminal of the first-route second-stage power amplifier unit module; the primary coil and the secondary coil of the second-route interstage transformer are each composed of two inductors, the primary coil is connected between a positive output terminal and an inverting output terminal of the second-route first-stage power amplifier unit module, and the secondary coil is connected between a positive input terminal and an inverting input terminal of the second-route second-stage power amplifier unit module.
The four inductors of the secondary coil of the input transformer are divided into two groups, each group comprising two inductors connected in series with each other, wherein one group is connected between the positive input terminals of the first-route first-stage power amplifier unit module and the second-route first-stage power amplifier unit module, and the other group is connected between the inverting input terminals of the first-route first-stage power amplifier unit module and the second-route first-stage power amplifier unit module.
The four inductors of the primary coil of the output transformer are divided into two groups, each group comprising two inductors connected in series with each other, wherein one group is connected between the positive output terminals of the first-route second-stage power amplifier unit module and the second-route second-stage power amplifier unit module, and the other group is connected between the inverting output terminals of the first-route second-stage power amplifier unit module and the second-route second-stage power amplifier unit module.
The primary coil of the first-route interstage transformer is connected with a first voltage source, and the secondary coil of the first-route interstage transformer is connected with a first bias power supply; the primary coil of the second-route interstage transformer is connected with a second voltage source, and the secondary coil of the second-route interstage transformer is connected with a second bias power supply.
The first control switch and the second control switch are each composed of a transistor.
Compared with the prior art, the technical solution of the present invention has the following beneficial effects:
The present invention firstly proposes a new structure of a dual-band RF power amplifier realized by transformer matching + switch selection. In order to reduce the area of the entire dual-band RF power amplifier, an active part of the present invention is divided into two routes in the design, and the matching network between two stages uses a transformer to simultaneously convert the impedances of the two routes to realize the impedance matching and power coupling of dual frequency bands. At the same time, in order to achieve the best performance of each frequency band, when designing the transformer, it is necessary to design the size of the transformer to an optimal result according to the requirements of operating frequencies of the dual frequency bands. In addition, the present invention adds a set of control switches at the output end, and realizes the requirements of separate operation or simultaneous operation of the two frequency bands by controlling on and off of the switches.
The present invention adopts a topology structure of RF power amplifier having the transformer + switches, and realizes the impedance change of the two routes simultaneously by using the transformer, which can not only solve the problems such as one that a large area is occupied by the dual-band amplifier realized based on unit selection and reconfigurable load, but can also maintain that the dual-band power amplifier based on a dual-band impedance matching network can simultaneously support the operation of two frequency bands. At the same time, the switch control is combined so that the dual-band power amplifier meets the diversified development needs of wireless devices.
Brief description of the drawings
Fig. 1 is a circuit block diagram of a monolithically integrated dual-band RF power amplifier of the present invention.
Reference signs: PA1: first-route first-stage power amplifier unit module; PA2: first-stage second-stage power amplifier unit module; PA3: second-route first-stage power amplifier unit module; PA4: second-route second-stage power amplifier unit module; PAJN: input port; PA_OUT: output port, VDi: first voltage source; VD2: second voltage source; VGi: first bias power supply; VG2: second bias power supply; Vctrl_A: first control switch; Vctrl_B: second control switch; L1: first inductor; L2: second inductor; L3: third inductor; L4: fourth inductor; L5: fifth inductor; L6: sixth inductor; L7: seventh inductor; L8: eighth inductor; L9: ninth inductor; L10: tenth inductor; L11 : eleventh inductor; L12: twelfth inductor; L13: thirteenth inductor; L14: fourteenth inductor; L15: fifteenth inductor; L16: sixteenth inductor; L17: seventeenth inductor; L18: eighteenth inductor; L19: nineteenth inductor; L20: twentieth inductor; L21: twenty-first inductor; L22: twenty-second inductor; L23 twenty-third inductor; L24 twenty-fourth inductor.
Detailed description of the embodiments
The present invention proposes a RF transformer power amplifier realizing the operation of dual frequency bands by transformer matching + switch selection based on the current diversified development requirements of various wireless devices. In order to more clearly explain the technical solutions of the present invention, the present invention will be further described below in conjunction with the accompanying drawings.
As shown in FIG. 1, a monolithic integrated dual-band RF power amplifier of the present invention comprises a first-route first-stage power amplifier unit module PA1, a first-route second-stage power amplifier unit module PA2, a second-route first-stage power amplifier unit module PA3 and a second-route second-stage power amplifier unit module PA4. An input transformer is connected between an input terminal of the first-route first-stage power amplifier unit module PA1 and an input terminal of the second-route first-stage power amplifier unit module PA3, an output transformer is connected between an output terminal of the first-route second-stage power amplifier unit module PA2 and an output terminal of the second-route second-stage power amplifier unit module PA4, a first-route interstage transformer is connected between an output terminal of the first-route first-stage power amplifier unit module PA1 and an input terminal of the first-route second-stage power amplifier unit module PA2, and a second-route interstage transformer is connected between an output terminal of the second-route first-stage power amplifier unit module PA3 and an input terminal of the second-route second-stage power amplifier unit module PA4.
The primary coil of the input transformer is disposed on the outer layer of a secondary coil. The primary coil of the input transformer is composed of four inductors (including a first inductor L1, a second inductor L2, a third inductor L3, and a fourth inductor L4) connected in series, and the primary coil is connected to an input port PA_IN. The secondary coil of the input transformer is composed of four inductors, and the four inductors are divided into two groups, each group including two inductors connected in series with each other, wherein one group of inductors (including a fifth inductor L5 and a sixth inductor L6) are connected between positive input terminals of the first-route first-stage power amplifier unit module PA1 and the second-route first-stage power amplifier unit module PA3, and the other group of inductors (including a seventh inductor L7 and an eighth inductor L8) are connected between inverting input terminals of the first-route first-stage power amplifier unit module PA1 and the second-route first-stage power amplifier unit module PA3.
The secondary coil of the output transformer is disposed on the outer layer of a primary coil. The secondary coil of the output transformer is composed of four inductors (including a seventeenth inductor L17, an eighteenth inductor L18, a nineteenth inductor L19, and a twentieth inductor) connected in series, and the secondary coil is connected to an output port PA_OUT. The primary coil of the output transformer is composed of four inductors, and the four inductors are divided into two groups, each group including two inductors connected in series with each other, wherein one group of inductors (including a twenty-third inductor L23 and a twenty-fourth inductor L24) are connected between positive input terminals of the first-route second-stage power amplifier unit module PA2 and the second-route second-stage power amplifier unit module PA4, and the other group of inductors (including a twenty-third inductor L21 and a twenty-fourth inductor L22) are connected between inverting input terminals of the first-route second-stage power amplifier unit module PA2 and the second-route second-stage power amplifier unit module PA4. A first control switch Vctrl_A is connected between a positive output terminal and an inverting output terminal of the first-route second-stage power amplifier unit module PA2, a second control switch Vctrl_B is connected between a positive output terminal and an inverting output terminal of the second-route second-stage power amplifier unit module PA4, and the first control switch Vctrl_A and the second control switch VctrI B are each composed of a transistor.
The secondary coil of the first-route interstage transformer is disposed on the outer layer of the primary coil. The primary coil and the secondary coil of the first-route interstage transformer are each composed of two inductors connected in series, the primary coil (including an eleventh inductor L11 and a twelfth inductor L12) is connected between a positive output terminal and an inverting output terminal of the first-route first-stage power amplifier unit module PA1, and the secondary coil (including a ninth inductor L9 and a tenth inductor L10) is connected between a positive input terminal and an inverting input terminal of the first-stage second-stage power amplifier unit module PA2. The primary coil of the first-route interstage transformer is connected with a first voltage source VDi, and the secondary coil of the first-route interstage transformer is connected with a first bias power supply Vgi·
The primary coil and the secondary coil of the second-route interstage transformer are each composed of two inductors connected in series, the primary coil (including a fifteenth inductor L15 and a sixteenth inductor L16) is connected between a positive output terminal and an inverting output terminal of the second-route first-stage power amplifier unit module PA3, and the secondary coil (including a thirteenth inductor L13 and a fourteenth inductor L14) is connected between a positive input terminal and an inverting input terminal of the second-route second-stage power amplifier unit module PA4. The primary coil of the second-route interstage transformer is connected with a second voltage source Vd2, and the secondary coil of the second-route interstage transformer is connected with a second bias power supply VG2-
An amplifier portion of the core of the monolithically integrated dual-band RF power amplifier proposed by the present invention is implemented by two routes. The operating frequency of the first route above is f\, and the operating frequency of the second route below is k. This ensures that the different frequencies of the two routes of power amplifiers can be biased under different operating conditions to achieve an optimal performance. At the same time, in order to obtain a relatively large output power at two different frequencies, each route is implemented using a two-stage power amplifier. A matching part is implemented using a transformer. Among them, in the input and output matching, in order to achieve the input and output impedance matching requirements of two routes of different frequency power amplifiers, a one-two transformer is used to realize. A transformer at the interstage matching is realized separately by using two routes, but in the process of implementation, the areas of two transformers separately accounts for a half of the input (or output) matching transformer, and the requirement for different impedance matching at different frequencies is satisfied to achieve the optimal matching without introducing additional area. Among them, Vgi and Vg2 provide gate bias voltages to the first-route second-stage power amplifier unit module PA2 and the second-route second-stage power amplifier unit module PA4, respectively, and Vdi and Vd2 provide power supply voltages to the first-route first-stage power amplifier unit module PA1 and the second-route first-stage power amplifier unit module PA3, respectively. In the process of designing the transformer, the size of the transformer and the corresponding number of metal layers can be appropriately selected and adjusted according to the difference of the impedances at different frequencies. This greatly exploits the advantages of multiple metal layers for RF integrated circuits. This is because in the layout design process of the RF power amplifier, a passive matching part determines the area of the entire power amplifier. Therefore, the use of a transformer not only achieves the dual-band requirement, but also greatly saves the area of the dual-band power amplifier.
In addition, the present invention adds a set of control switches at the output end of the two-route power amplifier to achieve the selection of the operating frequency. The specific selection is as shown in Table 1. When Vctrl A and Vctrl_B are in the states of "OFF" and "ON", respectively, the upper route of the RF power amplifier operates and the operating frequency is /I; on the contrary, when Vctrl_A and Vctrl_B are in the states of "ON" and "OFF", respectively, the operating frequency is /2. When both Vctrl_A and Vctrl_B are in the state of "OFF", the RF power amplifier operates simultaneously at both frequencies.
Table 1 shows the operating states of the dual-band power amplifier corresponding to the states of the switches.
Although the functions and working processes of the present invention have been described above with reference to the accompanying drawings, the present invention is not limited to the specific functions and working processes described above, and the specific embodiments given above are merely illustrative and not restrictive. Many forms may be made by those skilled in the art under the inspiration of the present invention without departing from the spirit and scope of the invention, and these are all within the protection of the present invention.

Claims (5)

1. Monolithisch integrierter Dualband-Radiofrequenz-Leistungsverstärker, umfassend ein Leistungsverstärkermodul (PA1) der ersten Stufe der ersten Route, ein Leistungsverstärkermodul (PA2) der zweiten Stufe der ersten Route, ein Leistungsverstärkermodul (PA3) der ersten Stufe der zweiten Route und ein Leistungsverstärkermodul (PA4) der zweiten Stufe der zweiten Route, dadurch gekennzeichnet, dass ein Eingangstransformator zwischen einem Eingangsanschluß des Leistungsverstärkermoduls (PA1) der ersten Stufe der ersten Route und einem Eingangsanschluß des Leistungsverstärkermoduls (PA3) der ersten Stufe der zweiten Route geschaltet ist, und ein Ausgangstransformator zwischen einem Ausgangsanschluss des Leistungsverstärkermoduls (PA2) der zweiten Stufe der ersten Route und einen Ausgangsanschluss des Leistungsverstärkermoduls (PA4) der zweiten Stufe der zweiten Route geschaltet ist, wobei ein Zwischenstufen-Transformator der erste Route zwischen einem Ausgangsanschluss des Leistungsverstärkermoduls (PA1) der ersten Stufe der ersten Route und einem Eingangsanschluß des Leistungsverstärkermoduls (PA2) der zweiten Stufe der ersten Route geschaltet ist, und ein Zwischenstufen-Transformator der zweiten Route zwischen einem Ausgangsanschluss des Leistungsverstärkermoduls (PA3) der ersten Stufe der zweiten Route und einem Eingangsanschluss des Leistungsverstärkermoduls (PA4) der zweiten Stufe der zweiten Route geschaltet ist; wobei die Primärspule des Eingangstransformators aus vier Induktoren besteht, die in Reihe geschaltet sind, und die Primärspule mit einem Eingangsport (PA_IN) verbunden ist; die Sekundärspule des Eingangstransformators aus vier Induktoren besteht, wobei zwei Induktoren zwischen den positiven Eingangsanschlüssen des Leistungsverstärkermoduls (PA1 ) der ersten Stufe der ersten Route und des Leistungsverstärkermoduls (PA3) der ersten Stufe der zweiten Route verbunden sind, und die beiden anderen Induktoren zwischen den invertierenden Eingangsanschlüssen des Leistungsverstärkermoduls (PA1) der ersten Stufe der ersten Route und des Leistungsverstärkermoduls (PA3) der ersten Stufe der zweiten Route verbunden sind; wobei die Sekundärspule des Ausgangstransformators aus vier Induktoren besteht, die in Reihe geschaltet sind, und die Sekundärspule mit einem Ausgangsport (PA_OUT) verbunden ist; die Primärspule des Ausgangstransformators aus vier Induktoren besteht, wobei zwei Induktoren zwischen den positiven Ausgangsanschlüssen des Leistungsverstärkermoduls (PA2) der zweiten Stufe der ersten Route und des Leistungsverstärkermoduls (PA4) der zweiten Stufe der zweiten Route geschaltet sind, und die beiden anderen Induktoren zwischen den invertierenden Ausgangsanschlüssen des Leistungsverstärkermoduls (PA2) der zweiten Stufe der ersten Route und des Leistungsverstärkermoduls (PA4) der zweiten Stufe der zweiten Route geschaltet sind; wobei ein erster Steuerschalter (Vctrl_A) zwischen dem positiven Ausgangsanschluss und dem invertierenden Ausgangsanschluss des Leistungsverstärkermoduls (PA2) der zweiten Stufe der ersten Route geschaltet ist, und ein zweiter Steuerschalter (Vctrl_B) zwischen den positiven Ausgangsanschluss und den invertierenden Ausgangsanschluss des Leistungsverstärkermoduls (PA4) der zweiten Stufe der zweiten Route geschaltet ist; wobei die Primärspule und die Sekundärspule des Zwischenstufen-Transformators der ersten Route jeweils aus zwei Induktoren besteht, wobei die Primärspule zwischen einem positiven Ausgangsanschluss und einem invertierenden Ausgangsanschluss des Leistungsverstärkermoduls (PA1) der ersten Stufe der ersten Route geschaltet ist, und die Sekundärspule zwischen einem positiven Eingangsanschluss und einem invertierenden Eingangsanschluss des Leistungsverstärkermoduls (PA2) der zweiten Stufe der ersten Route geschaltet ist; wobei die Primärspule und die Sekundärspule des Zwischenstufen-Transformators der zweiten Route jeweils aus zwei Induktoren besteht, wobei die Primärspule zwischen einem positiven Ausgangsanschluss und einem invertierenden Ausgangsanschluss des Leistungsverstärkermoduls (PA3) der ersten Stufe der zweiten Route geschaltet ist, und die Sekundärspule zwischen einem positiven Eingangsanschluss und einem invertierenden Eingangsanschluss des Leistungsverstärkermoduls (PA4) der zweiten Stufe der zweiten Route geschaltet ist.A monolithically integrated dual band radio frequency power amplifier comprising a first stage first stage power amplifier module (PA1), a first stage second stage power amplifier module (PA2), a second stage first stage power amplifier module (PA3) and a power amplifier module (PA3) PA4) of the second stage of the second route, characterized in that an input transformer is connected between an input terminal of the power amplifier module (PA1) of the first stage of the first route and an input terminal of the power amplifier module (PA3) of the first stage of the second route, and an output transformer between an output terminal of the second-stage power amplifier module (PA2) of the first route and an output terminal of the second-stage power amplifier module (PA4) of the second route, an intermediate stage transformer connecting the first route between an output terminal of the power line a first-stage first-stage amplifier module (PA1) of the first route and an input terminal of the second-stage power amplifier module (PA2) of the first route, and an intermediate stage transformer of the second route between an output terminal of the first-stage power amplifier module (PA3) of the second route and an input terminal of the second-stage power amplifier module (PA4) of the second route; wherein the primary coil of the input transformer consists of four inductors connected in series and the primary coil is connected to an input port (PA_IN); the secondary coil of the input transformer consists of four inductors, two inductors being connected between the positive input terminals of the first stage power amplifier module (PA1) of the first route and the first stage second stage power amplifier module (PA3), and the other two inductors being connected between the inverting ones Input terminals of the power amplifier module (PA1) of the first stage of the first route and the power amplifier module (PA3) of the first stage of the second route are connected; the secondary coil of the output transformer consisting of four inductors connected in series and the secondary coil connected to an output port (PA_OUT); the primary coil of the output transformer consists of four inductors, with two inductors connected between the positive output terminals of the second stage power amplifier module (PA2) of the first route and the second stage power amplifier module (PA4) of the second route, and the two other inductors between the inverting ones Output terminals of the second-stage power amplifier module (PA2) of the first route and the second-stage power amplifier module (PA4) of the second route are connected; wherein a first control switch (Vctrl_A) is connected between the positive output terminal and the inverting output terminal of the second stage power amplifier module (PA2) of the first route, and a second control switch (Vctrl_B) between the positive output terminal and the inverting output terminal of the power amplifier module (PA4) second stage of the second route is switched; wherein the primary coil and the secondary coil of the intermediate stage transformer of the first route each consist of two inductors, the primary coil being connected between a positive output terminal and an inverting output terminal of the first stage first stage power amplifier module (PA1), and the secondary coil between a positive one Input terminal and an inverting input terminal of the power amplifier module (PA2) of the second stage of the first route is connected; wherein the primary coil and the secondary coil of the intermediate stage transformer of the second route each consist of two inductors, the primary coil being connected between a positive output terminal and an inverting output terminal of the first-stage power amplifier module (PA3) of the second route, and the secondary coil between a positive one Input terminal and an inverting input terminal of the power amplifier module (PA4) of the second stage of the second route is switched. 2. Monolithisch integrierter Dualband-Radiofrequenz-Leistungsverstärker nach Anspruch 1, dadurch gekennzeichnet, dass die vier Induktoren der Sekundärspule des Eingangstransformators in zwei Gruppen unterteilt sind, wobei jede Gruppe zwei Induktoren umfasst, die in Reihe miteinander verbunden sind, wobei eine Gruppe zwischen den positiven Eingangsanschlüssen des Leistungsverstärkermoduls (PA1) der ersten Stufe der ersten Route und des Leistungsverstärkermoduls (PA3) der ersten Stufe der zweiten Route geschaltet ist, und die andere Gruppe zwischen den invertierenden Eingangsanschlüssen des Leistungsverstärkermoduls (PA1) der ersten Stufe der ersten Route und des Leistungsverstärkermoduls (PA3) der ersten Stufe der zweiten Route geschaltet ist.A monolithically integrated dual-band radio-frequency power amplifier according to claim 1, characterized in that the four inductors of the secondary coil of the input transformer are divided into two groups, each group comprising two inductors connected in series with one group between the positive ones Input terminals of the power amplifier module (PA1) of the first route and the power amplifier module (PA3) of the first stage of the second route is switched, and the other group between the inverting input terminals of the power amplifier module (PA1) of the first stage of the first route and the power amplifier module ( PA3) of the first stage of the second route is switched. 3. Monolithisch integrierter Dualband-Radiofrequenz-Leistungsverstärker nach Anspruch 1, dadurch gekennzeichnet, dass die vier Induktoren der Sekundärspule des Ausgangstransformators in zwei Gruppen unterteilt sind, wobei jede Gruppe zwei Induktoren umfasst, die in Reihe miteinander verbunden sind, wobei eine Gruppe zwischen den positiven Ausgangsanschlüssen des Leistungsverstärkermoduls (PA2) der zweiten Stufe der ersten Route und des Leistungsverstärkermoduls (PA4) der zweiten Stufe der zweiten Route geschaltet ist, und die andere Gruppe zwischen den invertierenden Ausgangsanschlüssen des Leistungsverstärkermoduls (PA2) der zweiten Stufe der ersten Route und des Leistungsverstärkermoduls (PA4) der zweiten Stufe der zweiten Route geschaltet ist.A monolithically integrated dual-band radio-frequency power amplifier according to claim 1, characterized in that the four inductors of the secondary coil of the output transformer are divided into two groups, each group comprising two inductors connected in series with one group between the positive ones Output terminals of the second-stage power amplifier module (PA2) of the first route and the second-stage power amplifier module (PA4) of the second route, and the other group between the inverting output terminals of the second-stage power amplifier module (PA2) of the first route and the power amplifier module ( PA4) of the second stage of the second route is switched. 4. Monolithisch integrierter Dualband-Radiofrequenz-Leistungsverstärker nach Anspruch 1, dadurch gekennzeichnet, dass die Primärspule des Zwischenstufen-Transformators der ersten Route mit einer ersten Spannungsquelle (VDi) verbunden ist, und die Sekundärspule des Zwischenstufen-Transformators der ersten Route mit einer ersten Vorspannungsversorgung (Vgi) verbunden ist, wobei die Primärspule des Zwischenstufen-Transformators der zweiten Route mit einer zweiten Spannungsquelle (VD2) verbunden ist, und die Sekundärspule des Zwischenstufen-Transformators der zweiten Route mit einer zweiten Vorspannungsversorgung (VG2) verbunden ist.4. A monolithically integrated dual-band radio-frequency power amplifier according to claim 1, characterized in that the primary coil of the intermediate stage transformer of the first route to a first voltage source (VDi) is connected, and the secondary coil of the intermediate stage transformer of the first route with a first bias supply (Vgi), wherein the primary coil of the intermediate stage transformer of the second route is connected to a second voltage source (VD2), and the secondary coil of the intermediate stage transformer of the second route is connected to a second bias supply (VG2). 5. Monolithisch integrierter Dualband-Radiofrequenz-Leistungsverstärker nach Anspruch 1, dadurch gekennzeichnet, dass dererste Steuerschalter (Vctrl_A) und der zweite Steuerschalter (Vctrl_B) jeweils aus einem Transistor bestehen.5. Monolithically integrated dual-band radio-frequency power amplifier according to claim 1, characterized in that the first control switch (Vctrl_A) and the second control switch (Vctrl_B) each consist of a transistor.
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US5774017A (en) * 1996-06-03 1998-06-30 Anadigics, Inc. Multiple-band amplifier
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