CN111277230B - multi-frequency low noise amplifier - Google Patents
multi-frequency low noise amplifier Download PDFInfo
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- CN111277230B CN111277230B CN202010170071.1A CN202010170071A CN111277230B CN 111277230 B CN111277230 B CN 111277230B CN 202010170071 A CN202010170071 A CN 202010170071A CN 111277230 B CN111277230 B CN 111277230B
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/26—Modifications of amplifiers to reduce influence of noise generated by amplifying elements
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/56—Modifications of input or output impedances, not otherwise provided for
- H03F1/565—Modifications of input or output impedances, not otherwise provided for using inductive elements
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Abstract
The application relates to the technical field of integrated circuits, in particular to a multi-frequency low-noise amplifier, which aims at solving the problem that a low-noise amplifier can only work in a single frequency band due to solidification of a passive device of a matching network in the prior art and realizes the adjustable inductance value for the winding turns of an input inductor through the on-off control switching of a first single-stage radio frequency switch and a second single-stage radio frequency switch and the winding turns of an output inductor through the on-off control switching of the first double-stage radio frequency switch and the second double-stage radio frequency switch and the winding turns of the output inductor. In addition, the application can change the line width of the coil and the distance between adjacent coils when the radio frequency switch switches the inductance coil so as to optimize the conductance of the outer coil and the magnetic field of the inner coil, thereby improving the quality factor of the switchable inductance.
Description
Technical Field
The application relates to the technical field of integrated circuits, in particular to a multi-frequency low-noise amplifier.
Background
With the development and application of 5G communication technology, the rf front-end needs to support more frequency bands and modes, and the rf structure of the front-end is more and more complex, which requires the rf device design to support multimode multi-frequency integration and digital reconfigurable application, so as to reduce the cost of the rf device and save the PCB space.
In the related art, a low noise amplifier with a common source and common gate structure in a radio frequency front-end integrated circuit is matched with a network passive device to be solidified, so that the low noise amplifier can only work in a single frequency band, cannot be modulated in frequency, and is not suitable for multi-mode and multi-frequency application.
Disclosure of Invention
The application provides a multi-frequency low-noise amplifier which can solve the problem that the related technology can only work in a single frequency band.
The application provides a multi-frequency low noise amplifier, comprising: the device comprises a first capacitor, a second capacitor, a third capacitor, a grounding inductor, an input inductor, an output inductor, a first resistor, a first MOS tube and a second MOS tube; wherein:
one end of the first capacitor is an input end of the multi-frequency low-noise amplifier; the other end of the first capacitor is connected with one end of the second capacitor, one end of the input inductor and the grid electrode of the first MOS tube respectively; the other end of the input inductor is connected with bias voltage;
the other end of the second capacitor is connected with the source electrode of the first MOS tube and one end of the grounding inductor, and the other end of the grounding inductor is grounded; the drain electrode of the first MOS tube is connected with the source electrode of the second MOS tube, the grid electrode of the second MOS tube is connected with one end of the first resistor, the drain electrode of the second MOS tube is connected with one end of a third capacitor and one end of an output inductor, the other end of the output inductor and the other end of the first resistor are both connected with power supply voltage, and the other end of the third capacitor is the output end of the multi-frequency ground noise amplifier;
a first input tap, a second input tap, a third input tap and a fourth input tap are sequentially arranged at intervals from one end to the other end of the input inductor; the first single-stage radio frequency switch is connected between the first input tap and the fourth input tap, and the second single-stage radio frequency switch is connected between the second input tap and the third input tap.
Optionally, the first single-stage radio frequency switch and the second single-stage radio frequency switch include third MOS tubes, a gate of the third MOS tube is connected with one end of the first gate resistor, and a first drain-source resistor is connected between a source and a drain of the third MOS tube;
the source electrode and the drain electrode of the third MOS tube in the first single-stage radio frequency switch are respectively connected with a second input tap and a third input tap; the source electrode and the drain electrode of the third MOS tube in the second single-stage radio frequency switch are respectively connected with a first input tap and a fourth input tap;
the other end of the first grid resistor in the first single-stage radio frequency switch is connected with a first switch signal; and the other end of the first grid resistor in the second single-stage radio frequency switch is connected with a second switch signal.
Optionally, a first output tap, a second output tap, a third output tap and a fourth output tap are sequentially arranged on the output inductor at intervals from one end to the other end of the output inductor; the first two-stage radio frequency switch is connected between the first output tap and the fourth output tap, and the second two-stage radio frequency switch is connected between the second output tap and the third output tap.
Optionally, the first two-stage radio frequency switch and the second two-stage radio frequency switch each include a fourth MOS tube and a fifth MOS tube; the grid electrode of the fourth MOS tube is connected with the second grid electrode resistor, and the grid electrode of the fifth MOS tube is connected with the third grid electrode resistor; a second drain-source resistor is connected between the drain electrode and the source electrode of the fourth MOS tube, a third drain-source resistor is connected between the drain electrode and the source electrode of the fifth MOS tube, and the source electrode of the fourth MOS tube is connected with the drain electrode of the fifth MOS tube;
the second output tap is connected with the drain electrode of the fourth MOS tube of the first two-stage radio frequency switch, and the third output tap is connected with the source electrode of the fifth MOS tube of the first two-stage radio frequency switch; the first output tap is connected with the drain electrode of the fourth MOS tube of the second dual-stage radio frequency switch, and the fourth output tap is connected with the source electrode of the fifth MOS tube of the second dual-stage radio frequency switch.
Optionally, the input inductor and the output inductor each include a plurality of windings, the winding line width of the input inductor gradually narrows from the outer ring to the inner ring of the input inductor, and the winding line width of the output inductor gradually narrows from the outer ring to the inner ring of the output inductor.
Optionally, the distance between adjacent coils of the input inductor gradually increases from the outer ring to the inner ring of the input inductor; the distance between the adjacent coils of the output inductor gradually increases from the outer ring to the inner ring of the output inductor.
Optionally, the input inductor and the output inductor are both L-shaped inductors.
Optionally, the second capacitor and the third capacitor are both variable capacitors.
The technical scheme of the application at least comprises the following advantages:
the on-off control of the first single-stage radio frequency switch and the second single-stage radio frequency switch is used for switching and selecting the winding turns of the input inductor, the on-off control of the first double-stage radio frequency switch and the second double-stage radio frequency switch is used for switching and selecting the winding turns of the output inductor on the output side, and the second capacitor and the third capacitor of the variable capacitor are used as auxiliary materials, so that the problem that the low-noise amplifier can only work in a single frequency band due to solidification of a passive device of a matching network in the prior art is avoided, the inductance value is adjustable, and the working frequency band of the circuit is adjustable. In addition, the application can change the line width of the coil and the distance between adjacent coils when the radio frequency switch switches the inductance coil so as to optimize the conductance of the outer coil and the magnetic field of the inner coil, thereby improving the quality factor of the switchable inductance.
Drawings
In order to more clearly illustrate the embodiments of the present application or the technical solutions in the prior art, the drawings that are needed in the description of the embodiments or the prior art will be briefly described, and it is obvious that the drawings in the description below are some embodiments of the present application, and other drawings can be obtained according to the drawings without inventive effort for a person skilled in the art.
FIG. 1 is a schematic diagram of a multi-frequency low noise amplifier according to an embodiment of the present application;
FIG. 2 is a schematic diagram of an input inductor according to an embodiment of the present application;
FIG. 3 is a diagram of an input inductance equivalent circuit according to an embodiment of the present application;
FIG. 4 is an equivalent circuit diagram of an output inductor according to an embodiment of the present application;
fig. 5 is an S-parameter graph of a three-band of a multi-frequency low noise amplifier according to an embodiment of the present application.
Detailed Description
The following description of the embodiments of the present application will be made more apparent and fully hereinafter with reference to the accompanying drawings, in which some, but not all embodiments of the application are shown. All other embodiments, which can be made by those skilled in the art based on the embodiments of the application without making any inventive effort, are intended to be within the scope of the application.
In the description of the present application, it should be noted that the directions or positional relationships indicated by the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", etc. are based on the directions or positional relationships shown in the drawings, are merely for convenience of describing the present application and simplifying the description, and do not indicate or imply that the devices or elements referred to must have a specific orientation, be configured and operated in a specific orientation, and thus should not be construed as limiting the present application. Furthermore, the terms "first," "second," and "third" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance.
In the description of the present application, it should be noted that, unless explicitly specified and limited otherwise, the terms "mounted," "connected," and "connected" are to be construed broadly, and may be either fixedly connected, detachably connected, or integrally connected, for example; can be mechanically or electrically connected; the two components can be directly connected or indirectly connected through an intermediate medium, or can be communicated inside the two components, or can be connected wirelessly or in a wired way. The specific meaning of the above terms in the present application will be understood in specific cases by those of ordinary skill in the art.
In addition, the technical features of the different embodiments of the present application described below may be combined with each other as long as they do not collide with each other.
The application provides a multi-frequency low-noise amplifier, which solves the problem that the low-noise amplifier can only work in a single frequency band due to solidification of a passive device of a matching network in the prior art.
Specifically, referring to fig. 1, the multi-frequency low noise amplifier includes: the device comprises a first capacitor Cg, a second capacitor Cex, a third capacitor Cd, a grounding inductor Ls, an input inductor Lg, an output inductor Ld, a first resistor Rb, a first MOS tube Min and a second MOS tube Mo; wherein:
one end of the first capacitor Cg is an input end RFin of the multi-frequency low-noise amplifier; the other end of the first capacitor Cg is connected with one end of the second capacitor Cex, one end P2 of the input inductor Lg and the grid electrode of the first MOS transistor Min respectively; the other end P1 of the input inductor Lg is connected with bias voltage Vgbias;
the other end of the second capacitor Cex is connected with the source electrode of the first MOS transistor Min and one end of the grounding inductor Ls, and the other end of the grounding inductor Ls is grounded; the drain electrode of the first MOS tube Min is connected with the source electrode of the second MOS tube Mo, the grid electrode of the second MOS tube Mo is connected with one end of the first resistor Rb, the drain electrode of the second MOS tube Mo is connected with one end of a third capacitor Cd and one end Q1 of an output inductor Ld, the other end Q2 of the output inductor Ld and the other end of the first resistor Rb are both connected with a power supply voltage Vdd, and the other end of the third capacitor Cd is an output end RFout of the multi-frequency ground noise amplifier;
referring to fig. 2 and 3, a first input tap W1, a second input tap W2, a third input tap W3 and a fourth input tap W4 are sequentially provided from one end P2 to the other end of the input inductor Lg at intervals; the second single-stage radio frequency switch RFSW2 is connected between the first input tap W1 and the fourth input tap W4, and the first single-stage radio frequency switch RFSW1 is connected between the second input tap W2 and the third input tap W3.
In specific practical application, each MOS tube can be replaced by a three-stage tube, so that the specific application environment of the MOS tube is within the protection scope of the application.
The specific working principle is as follows:
referring to fig. 1 to 4, the present application switches and selects the number of windings of the input inductor Lg by controlling the on-off of the first single stage rf switch RFSW1 and the second single stage rf switch RFSW2, when the first single stage rf switch RFSW1 is turned on (i.e., T1 is "1"), the second single stage rf switch RFSW2 is turned off (i.e., T2 is "0"), the inductor windings Lg5 and Lg6 between the second input tap W2 and the third input tap W3 are shorted by the short circuit, the inductor windings Lg4 and Lg2 between the second input tap W2 and one end P2 of the input inductor Lg are connected in series with the inductor windings Lg3 and Lg1 between the third input tap W3 and the other end P1 of the input inductor Lg between the bias voltage Vgbias and the other end of the first capacitor Cg of the multi-frequency low noise amplifier; when the second single-stage rf switch RFSW2 is turned on (i.e., T2 is "1"), the inductors Lg4, lg6, lg5 and Lg3 between the first input tap W1 and the fourth input tap W4 are short-circuited, the inductor Lg2 between one end of the input inductor Lg and the first tap is connected in series with the inductor Lg1 between the fourth tap and the other end of the input inductor Lg between the bias voltage Vgbias and the other end of the first capacitor Cg of the multi-frequency low noise amplifier, irrespective of whether the first single-stage rf switch RFSW1 is turned on or not (i.e., T1 is "X"); when the first single-stage rf switch RFSW1 and the second single-stage rf switch RFSW2 are turned off, i.e., T2 is "0", T1 is "0", all windings of the input inductor Lg, i.e., windings Lg1 to Lg6 are connected between the bias voltage Vgbias and the other end of the first capacitor Cg of the multi-frequency low-noise amplifier. The above process can enable the inductance value to be adjustable by controlling and switching on and off of the first single-stage radio frequency switch RFSW1 and the second single-stage radio frequency switch RFSW2 and selecting the winding turns of the input inductance Lg, thereby realizing the adjustable circuit working frequency band.
In another embodiment of the present application, based on the above embodiment, referring to fig. 4, a first output tap Z1, a second output tap Z2, a third output tap Z3, and a fourth output tap Z4 are sequentially provided on the output inductor Ld from one end Q1 to the other end of the output inductor Ld at intervals; the second dual-stage radio frequency switch DSW2 is connected between the first output tap Z1 and the fourth output tap Z4, and the first dual-stage radio frequency switch DSW1 is connected between the second output tap Z2 and the third output tap Z3.
The specific working principle of the input terminal RFin of this embodiment is the same as that of the above embodiment, for the output terminal RFout, the winding turns of the output inductor Ld are switched and selected by the on-off control of the first two-stage radio frequency switch DSW1 and the second two-stage radio frequency switch DSW2, when the first two-stage radio frequency switch DSW1 is turned on (i.e. T1 is "1"), the second two-stage radio frequency switch DSW2 is turned off (i.e. T2 is "0"), the inductance windings Ld5 and Ld6 between the second output tap Z2 and the third output tap Z3 are short-circuited, the inductance coils Ld1 and Ld3 between the second output tap Z2 and one end Q1 of the output inductor Ld are connected in series with the inductance coils Ld4 and Ld2 between the third output tap Z3 and the other end Q2 of the output inductor Ld between the power supply voltage Vdd and one end of the second capacitor Cd of the multi-frequency low noise amplifier; when the second dual-stage rf switch DSW2 is turned on (i.e., T2 is "1"), the first dual-stage rf switch DSW1 is short-circuited between the inductor Ld3, ld5, ld6 and Ld4 located between the first output tap Z1 and the fourth output tap Z4, and the inductor Ld1 located between one end of the output inductor Ld and the first tap is connected in series with the inductor Ld2 located between the fourth tap and the other end of the output inductor Ld between the power supply voltage Vdd and one end of the second capacitor Cd of the multi-frequency low noise amplifier; when the first dual-stage radio frequency switch DSW1 and the second dual-stage radio frequency switch DSW2 are turned off, i.e., T2 is "0", T1 is "0", and all windings Ld1 to Ld6 of the output inductor Ld are connected between the power supply voltage Vdd and one end of the second capacitor Cd of the multi-frequency low noise amplifier. The above process can enable the inductance value to be adjustable by controlling and switching on and off of the first double-stage radio frequency switch DSW1 and the second double-stage radio frequency switch DSW2 and selecting the winding turns of the output inductor Ld, thereby realizing the adjustable circuit working frequency band.
The input side and the output side of the embodiment are respectively matched with the multi-section switching inductor, and the inductance value is changed through the winding turns of the corresponding switching inductor, so that the circuit working frequency band is adjustable, and the cost of the radio frequency system is reduced.
For the above embodiment, referring to fig. 1, the first single-stage rf switch RFSW1 and the second single-stage rf switch RFSW2 include third MOS transistors M1, a gate of the third MOS transistor M1 is connected to one end of the first gate resistor Rg1, and a first drain-source resistor Rds1 is connected between a source and a drain of the third MOS transistor M1.
The source electrode and the drain electrode of the third MOS tube M1 in the first single-stage radio frequency switch RFSW1 are respectively connected with a second input tap W2 and a third input tap W3; the source electrode and the drain electrode of the third MOS tube M1 in the second single-stage radio frequency switch RFSW2 are respectively connected with the first input tap W1 and the fourth input tap W4.
The other end of the first grid resistor Rg1 in the first single-stage radio frequency switch RFSW1 is connected with a first switch signal T1; the other end of the first gate resistor Rg1 in the second single-stage radio frequency switch RFSW2 is connected to the second switching signal T2.
The first double-stage radio frequency switch DSW1 and the second double-stage radio frequency switch DSW2 comprise a fourth MOS tube M2 and a fifth MOS tube M3; the grid electrode of the fourth MOS tube M2 is connected with the second grid electrode resistor Rg2, and the grid electrode of the fifth MOS tube M3 is connected with the third grid electrode resistor Rg3; a second drain-source resistor Rds2 is connected between the drain and the source of the fourth MOS transistor M2, a third drain-source resistor Rds3 is connected between the drain and the source of the fifth MOS transistor M3, and the source of the fourth MOS transistor M2 is connected with the drain of the fifth MOS transistor M3.
The second output tap Z2 is connected with the drain electrode of the fourth MOS tube M2 of the first two-stage radio frequency switch DSW1, and the third output tap Z3 is connected with the source electrode of the fifth MOS tube M3 of the first two-stage radio frequency switch DSW 1; the first output tap Z1 is connected to the drain of the fourth MOS transistor M2 of the second dual-stage radio frequency switch DSW2, and the fourth output tap Z4 is connected to the source of the fifth MOS transistor M3 of the second dual-stage radio frequency switch DSW 2.
It can be understood that, on the input side, the structural design of the first single-stage rf switch RFSW1 and the second single-stage rf switch RFSW2 of the input inductor Lg can optimize the performance of the rf switch, reduce the influence on the rf performance of the low noise amplifier, improve the quality factor of the inductor, and optimize the noise factor. The structural design of the first dual-stage radio frequency switch DSW1 and the second dual-stage radio frequency switch DSW2 of the output inductor Ld can be optimized at the output side. . The frequency band matching and power linearity of the low noise amplifying circuit are improved.
For the above embodiment, referring to fig. 2, the input inductor Lg and the output inductor Ld each include a plurality of windings, the winding line width of the input inductor Lg gradually narrows from the outer ring to the inner ring of the input inductor Lg, and the winding line width of the output inductor Ld gradually narrows from the outer ring to the inner ring of the output inductor Ld. When the corresponding radio frequency switch switches the inductance coil, the wire width of the coil can be changed while the number of turns of the coil winding is changed, so that the conductance of the outer coil and the magnetic field of the inner coil are optimized, and the quality factor of the switchable inductance is improved.
For the above embodiments, referring to fig. 2, the interval between adjacent coils of the input inductance Lg is gradually increased from the outer ring to the inner ring of the input inductance Lg; the distance between adjacent coils of the output inductor Ld is gradually increased from the outer ring to the inner ring of the output inductor Ld. When the corresponding radio frequency switch switches the inductance coil, the winding turns of the coil can be changed, and the distance between adjacent coils can be changed at the same time, so that the conductance of the outer coil and the magnetic field of the inner coil are optimized, and the quality factor of the switchable inductance is improved.
Fig. 5 is a graph of S-parameters (i.e., scattering parameters) of three frequency bands of a multi-frequency low noise amplifier according to an embodiment of the present application. Wherein, the S11 curve in each frequency band is expressed as the change relation of the input return loss (namely the input reflection coefficient) along with the frequency in each frequency band; the S21 curve is expressed as the forward transmission coefficient (i.e., gain) in the respective frequency bands as a function of frequency; the S12 curve is expressed as the relationship of the reverse transmission coefficient (i.e., isolation) in the respective frequency bands as a function of frequency; the S22 curve is expressed as a change in output return loss (output reflection coefficient) with frequency in the respective frequency bands.
For the above embodiments, the input inductance Lg and the output inductance Ld are both L-shaped impedance matching inductances, so that matching power transmission performance is obtained. The second capacitor Cex and the third capacitor Cd are variable capacitors, so as to realize three-frequency or multi-frequency impedance matching and radio frequency performance optimization.
It is apparent that the above examples are given by way of illustration only and are not limiting of the embodiments. Other variations or modifications of the above teachings will be apparent to those of ordinary skill in the art. It is not necessary here nor is it exhaustive of all embodiments. While still being apparent from variations or modifications that may be made by those skilled in the art are within the scope of the application.
Claims (6)
1. A multi-frequency low noise amplifier comprising: the device comprises a first capacitor, a second capacitor, a third capacitor, a grounding inductor, an input inductor, an output inductor, a first resistor, a first MOS tube and a second MOS tube; wherein:
one end of the first capacitor is an input end of the multi-frequency low-noise amplifier; the other end of the first capacitor is connected with one end of the second capacitor, one end of the input inductor and the grid electrode of the first MOS tube respectively; the other end of the input inductor is connected with bias voltage;
the other end of the second capacitor is connected with the source electrode of the first MOS tube and one end of the grounding inductor, and the other end of the grounding inductor is grounded; the drain electrode of the first MOS tube is connected with the source electrode of the second MOS tube, the grid electrode of the second MOS tube is connected with one end of the first resistor, the drain electrode of the second MOS tube is connected with one end of a third capacitor and one end of an output inductor, the other end of the output inductor and the other end of the first resistor are both connected with power supply voltage, and the other end of the third capacitor is the output end of the multi-frequency ground noise amplifier;
a first input tap, a second input tap, a third input tap and a fourth input tap are sequentially arranged at intervals from one end to the other end of the input inductor; a second single-stage radio frequency switch is connected between the first input tap and the fourth input tap, and a first single-stage radio frequency switch is connected between the second input tap and the third input tap;
the first single-stage radio frequency switch and the second single-stage radio frequency switch comprise third MOS (metal oxide semiconductor) tubes, wherein a grid electrode of the third MOS tube is connected with one end of a first grid resistor, and a first drain-source resistor is connected between a source electrode and a drain electrode of the third MOS tube;
the source electrode and the drain electrode of the third MOS tube in the first single-stage radio frequency switch are respectively connected with a second input tap and a third input tap; the source electrode and the drain electrode of the third MOS tube in the second single-stage radio frequency switch are respectively connected with a first input tap and a fourth input tap;
the other end of the first grid resistor in the first single-stage radio frequency switch is connected with a first switch signal; the other end of the first grid resistor in the second single-stage radio frequency switch is connected with a second switch signal;
a first output tap, a second output tap, a third output tap and a fourth output tap are sequentially arranged on the output inductor from one end to the other end of the output inductor at intervals; the first output tap and the fourth output tap are connected with a second double-stage radio frequency switch, and the second output tap and the third output tap are connected with a first double-stage radio frequency switch.
2. The multi-frequency low noise amplifier of claim 1, wherein the first dual-stage radio frequency switch and the second dual-stage radio frequency switch each comprise a fourth MOS transistor and a fifth MOS transistor; the grid electrode of the fourth MOS tube is connected with the second grid electrode resistor, and the grid electrode of the fifth MOS tube is connected with the third grid electrode resistor; a second drain-source resistor is connected between the drain electrode and the source electrode of the fourth MOS tube, a third drain-source resistor is connected between the drain electrode and the source electrode of the fifth MOS tube, and the source electrode of the fourth MOS tube is connected with the drain electrode of the fifth MOS tube;
the second output tap is connected with the drain electrode of the fourth MOS tube of the first two-stage radio frequency switch, and the third output tap is connected with the source electrode of the fifth MOS tube of the first two-stage radio frequency switch; the first output tap is connected with the drain electrode of the fourth MOS tube of the second dual-stage radio frequency switch, and the fourth output tap is connected with the source electrode of the fifth MOS tube of the second dual-stage radio frequency switch.
3. The multi-frequency low noise amplifier of claim 1, wherein the input inductor and the output inductor each comprise a plurality of turns of windings, the winding width of the input inductor gradually narrows from the outer turn to the inner turn of the input inductor, and the winding width of the output inductor gradually narrows from the outer turn to the inner turn of the output inductor.
4. The multi-frequency low noise amplifier according to claim 3, wherein a distance between adjacent coils of the input inductor becomes gradually larger from an outer ring to an inner ring of the input inductor; the distance between the adjacent coils of the output inductor gradually increases from the outer ring to the inner ring of the output inductor.
5. The multi-frequency low noise amplifier of claim 1, wherein the input inductance and the output inductance are both L-shaped impedance matching inductances.
6. The multi-frequency low noise amplifier of claim 1, wherein the second capacitor and the third capacitor are each variable capacitors.
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| CN113206644B (en) * | 2021-03-24 | 2022-05-27 | 电子科技大学 | High-efficiency distributed power amplifier with reconfigurable bandwidth |
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| CN109088604A (en) * | 2018-08-06 | 2018-12-25 | 上海华虹宏力半导体制造有限公司 | A kind of variable gain low-noise amplifier |
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| KR100644273B1 (en) * | 2004-12-21 | 2006-11-10 | 한국전자통신연구원 | Low noise amplifier of wide-band tunable matching |
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| CN108063600A (en) * | 2018-01-03 | 2018-05-22 | 上海华虹宏力半导体制造有限公司 | A kind of low-noise amplifier and radio-frequency front-end integrated circuit |
| CN109088604A (en) * | 2018-08-06 | 2018-12-25 | 上海华虹宏力半导体制造有限公司 | A kind of variable gain low-noise amplifier |
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| CN111277230A (en) | 2020-06-12 |
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