KR980003793A - A mask for forming a photoresist pattern - Google Patents
A mask for forming a photoresist pattern Download PDFInfo
- Publication number
- KR980003793A KR980003793A KR1019960024026A KR19960024026A KR980003793A KR 980003793 A KR980003793 A KR 980003793A KR 1019960024026 A KR1019960024026 A KR 1019960024026A KR 19960024026 A KR19960024026 A KR 19960024026A KR 980003793 A KR980003793 A KR 980003793A
- Authority
- KR
- South Korea
- Prior art keywords
- transparent substrate
- mask
- photoresist pattern
- forming
- pattern
- Prior art date
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- Preparing Plates And Mask In Photomechanical Process (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
감광막 패턴을 형성하기 위한 마스크가 개시되어 있다. 이 마스크는 투명한 기판; 및 상기 투명한 기판의 한쪽 면 소정영역에 광 투과율이 10% 내지 30%이고 상기 투명한 기판을 통과하는 빛에 대하여 180°의 위상변화를 발생시키는 물질로 형성된 쉬프터를 포함하는 것을 특징한다. 이에 따라, 0.2㎛의 크기를 갖는 미세 패턴, 즉 감광막 패턴을 형성할 수 있으므로 고집적 반도체장치에 적합한 미세 콘택홀의 구현이 가능하다.A mask for forming a photoresist pattern is disclosed. The mask comprises a transparent substrate; And a shifter formed of a material having a light transmittance of 10% to 30% in a predetermined region on one side of the transparent substrate and generating a phase shift of 180 ° with respect to light passing through the transparent substrate. Accordingly, it is possible to form a fine pattern having a size of 0.2 mu m, that is, a photoresist pattern, thereby realizing a fine contact hole suitable for a highly integrated semiconductor device.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is a trivial issue, I did not include the contents of the text.
제2a도는 본 발명에 의한 마스크를 설명하기 위한 단면도이다.2A is a cross-sectional view for explaining a mask according to the present invention.
제2b도 내지 제2c도는 각각 제2a도의 마스크를 통과하는 빛의 세기 분포도 및 그에 따라 형성되는 콘택홀을 설명하기 위한 단면도이다.FIGS. 2b to 2c are cross-sectional views illustrating the intensity distribution of light passing through the mask of FIG. 2a and the contact holes formed according to the intensity distribution diagram, respectively.
Claims (1)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019960024026A KR980003793A (en) | 1996-06-26 | 1996-06-26 | A mask for forming a photoresist pattern |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019960024026A KR980003793A (en) | 1996-06-26 | 1996-06-26 | A mask for forming a photoresist pattern |
Publications (1)
Publication Number | Publication Date |
---|---|
KR980003793A true KR980003793A (en) | 1998-03-30 |
Family
ID=66240272
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019960024026A KR980003793A (en) | 1996-06-26 | 1996-06-26 | A mask for forming a photoresist pattern |
Country Status (1)
Country | Link |
---|---|
KR (1) | KR980003793A (en) |
-
1996
- 1996-06-26 KR KR1019960024026A patent/KR980003793A/en not_active Application Discontinuation
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WITN | Withdrawal due to no request for examination |