KR970076065A - Method of manufacturing phase inversion mask - Google Patents

Method of manufacturing phase inversion mask Download PDF

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Publication number
KR970076065A
KR970076065A KR1019960015567A KR19960015567A KR970076065A KR 970076065 A KR970076065 A KR 970076065A KR 1019960015567 A KR1019960015567 A KR 1019960015567A KR 19960015567 A KR19960015567 A KR 19960015567A KR 970076065 A KR970076065 A KR 970076065A
Authority
KR
South Korea
Prior art keywords
spin
glass
photoresist pattern
pattern
phase inversion
Prior art date
Application number
KR1019960015567A
Other languages
Korean (ko)
Inventor
이동현
문성용
Original Assignee
김광호
삼성전자 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 김광호, 삼성전자 주식회사 filed Critical 김광호
Priority to KR1019960015567A priority Critical patent/KR970076065A/en
Publication of KR970076065A publication Critical patent/KR970076065A/en

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  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)

Abstract

일정한 두께를 가지는 위상 반전 패턴을 가지는 위상 반전 마스크의 제조 방법을 제공하는 것이다. 본 발명은 투명한 기판의 전면에 스핀-온 글라스를 도포하는 단계와, 상기 스핀-온 글라스의 전면에 위상 반전 패턴을 형성하기 위한 포토레지스트 패턴을 형성하는 단계와, 상기 포토레지스트 패턴을 마스크로 사용하여 상기 스핀-온 글라스를 식각하는 단계와, 상기 포토레지스트 패턴의 전면에 크롬막을 증착하는 단계와, 상기 포토레지스트 패턴과 함께 상기 포토레지스트 패턴 위의 상기 크롬막을 제거하는 단계를 포함하는 위상 반전 마스크의 제조 방법이다. 따라서, 상기 위상 반전 패턴은 일정한 두께를 가지는 스핀-온 글라스로 형성되어 종래와 달리 위상이 변하는 문제를 방지할 수 있다.And a method of manufacturing a phase shift mask having a phase shift pattern having a constant thickness. The present invention provides a method of manufacturing a semiconductor device, comprising: applying a spin-on glass to a front surface of a transparent substrate; forming a photoresist pattern for forming a phase reversal pattern on the entire surface of the spin-on glass; Etching the spin-on glass, depositing a chromium film on the entire surface of the photoresist pattern, and removing the chromium film on the photoresist pattern together with the photoresist pattern. . Therefore, the phase inversion pattern is formed of a spin-on glass having a constant thickness, thereby preventing the phase change from being different from the conventional one.

Description

위상 반전 마스크의 제조 방법Method of manufacturing phase inversion mask

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is a trivial issue, I did not include the contents of the text.

제1도는 스핀-온 글라스를 이용하여 형성한 위상 반전 마스크를 보여주는 단면도이다.FIG. 1 is a cross-sectional view showing a phase inversion mask formed using a spin-on glass.

Claims (1)

투명한 기판의 전면에 스핀-온 글라스를 도포하는 단계; 상기 스핀-온 글라스의 전면에 위상 반전 패턴을 형성하기 위한 포토레지스트 패턴을 형성하는 단계; 상기 포토레지스트 패턴을 마스크로 사용하여 상기 스핀-온 글라스를 식각하는 단계; 상기 포토레지스트 패턴의 전면에 크롬막을 증착하는 단계; 및 상기 포토레지스트 패턴과 함께 상기 포토레지스트 패턴 위의 상기 크롬막을 제거하는 단계를 포함하는 것을 특징으로 하는 위상 반전 마스크의 제조 방법.Applying a spin-on glass to a front surface of a transparent substrate; Forming a photoresist pattern for forming a phase reversal pattern on the front surface of the spin-on glass; Etching the spin-on glass using the photoresist pattern as a mask; Depositing a chromium film on the entire surface of the photoresist pattern; And removing the chromium film on the photoresist pattern together with the photoresist pattern. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: It is disclosed by the contents of the first application.
KR1019960015567A 1996-05-11 1996-05-11 Method of manufacturing phase inversion mask KR970076065A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019960015567A KR970076065A (en) 1996-05-11 1996-05-11 Method of manufacturing phase inversion mask

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019960015567A KR970076065A (en) 1996-05-11 1996-05-11 Method of manufacturing phase inversion mask

Publications (1)

Publication Number Publication Date
KR970076065A true KR970076065A (en) 1997-12-10

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019960015567A KR970076065A (en) 1996-05-11 1996-05-11 Method of manufacturing phase inversion mask

Country Status (1)

Country Link
KR (1) KR970076065A (en)

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