KR940004836A - Contact hole formation method of semiconductor device - Google Patents
Contact hole formation method of semiconductor device Download PDFInfo
- Publication number
- KR940004836A KR940004836A KR1019920015520A KR920015520A KR940004836A KR 940004836 A KR940004836 A KR 940004836A KR 1019920015520 A KR1019920015520 A KR 1019920015520A KR 920015520 A KR920015520 A KR 920015520A KR 940004836 A KR940004836 A KR 940004836A
- Authority
- KR
- South Korea
- Prior art keywords
- insulating layer
- forming
- contact hole
- pattern
- layer
- Prior art date
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- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
본 발명은 고집적 반도체 소자의 콘택홀 형성방법에 관한 것으로, 선폭이 최소화된 콘택홀을 형성하기 위해 폴리 실리콘층 패턴 상부에 형성되는 절연막 패턴과 절연막 스페이서를 제거하여 폴리실리콘층 패턴 하부의 절연막을 식각하는 플라즈마 식각공정에서 절연막 스페이서에 의한 플라즈마 스캐터링이 발생하지 않도록 하여 안정된 콘택홀을 형성하는 기술이다.The present invention relates to a method for forming a contact hole of a highly integrated semiconductor device, and to remove the insulating film pattern and insulating film spacer formed on the polysilicon layer pattern to form a contact hole with a minimum line width, the insulating film under the polysilicon layer pattern is etched. In the plasma etching process, plasma scattering by the insulating film spacers does not occur, thereby forming a stable contact hole.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.
제2A도 내지 제2C도는 본 발명에 의해 콘택홀을 형성하는 단계를 도시한 단면도.2A to 2C are cross-sectional views showing steps of forming contact holes according to the present invention.
Claims (1)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019920015520A KR940004836A (en) | 1992-08-28 | 1992-08-28 | Contact hole formation method of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019920015520A KR940004836A (en) | 1992-08-28 | 1992-08-28 | Contact hole formation method of semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
KR940004836A true KR940004836A (en) | 1994-03-16 |
Family
ID=67147909
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019920015520A KR940004836A (en) | 1992-08-28 | 1992-08-28 | Contact hole formation method of semiconductor device |
Country Status (1)
Country | Link |
---|---|
KR (1) | KR940004836A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100843903B1 (en) * | 2007-03-15 | 2008-07-03 | 주식회사 하이닉스반도체 | Method for manufacturing of semiconductor device |
-
1992
- 1992-08-28 KR KR1019920015520A patent/KR940004836A/en not_active Application Discontinuation
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100843903B1 (en) * | 2007-03-15 | 2008-07-03 | 주식회사 하이닉스반도체 | Method for manufacturing of semiconductor device |
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