KR970054123A - Semiconductor device including resistor and capacitor and method of manufacturing same - Google Patents

Semiconductor device including resistor and capacitor and method of manufacturing same Download PDF

Info

Publication number
KR970054123A
KR970054123A KR1019950066838A KR19950066838A KR970054123A KR 970054123 A KR970054123 A KR 970054123A KR 1019950066838 A KR1019950066838 A KR 1019950066838A KR 19950066838 A KR19950066838 A KR 19950066838A KR 970054123 A KR970054123 A KR 970054123A
Authority
KR
South Korea
Prior art keywords
layer
capacitor
polysilicon
semiconductor device
resistive
Prior art date
Application number
KR1019950066838A
Other languages
Korean (ko)
Other versions
KR100190002B1 (en
Inventor
오희선
유광동
Original Assignee
김광호
삼성전자 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 김광호, 삼성전자 주식회사 filed Critical 김광호
Priority to KR1019950066838A priority Critical patent/KR100190002B1/en
Publication of KR970054123A publication Critical patent/KR970054123A/en
Application granted granted Critical
Publication of KR100190002B1 publication Critical patent/KR100190002B1/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
    • H01L27/0641—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region without components of the field effect type
    • H01L27/0676—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region without components of the field effect type comprising combinations of diodes, or capacitors or resistors
    • H01L27/0682—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region without components of the field effect type comprising combinations of diodes, or capacitors or resistors comprising combinations of capacitors and resistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/40—Capacitors
    • H01L28/60—Electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/40—Capacitors
    • H01L28/60—Electrodes
    • H01L28/75—Electrodes comprising two or more layers, e.g. comprising a barrier layer and a metal layer

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Semiconductor Integrated Circuits (AREA)

Abstract

저항과 캐패시터를 함께 구비하는 반도체 소자 및 그 제조방법에 대해 기재되어 있다.Disclosed are a semiconductor device including a resistor and a capacitor, and a method of manufacturing the same.

이는, 반도체기판 상에서 형성되며, 캐패시터의 하부전극으로 공유되는 저항층, 정항층의 상부 표면에 형성된 유전체막 및 유전체막 상부 및 저항층의 측면을 감싸는 형의 캐패시터의 상부전극을 구비하는 것을 특징으로 한다.It is formed on the semiconductor substrate, characterized in that it comprises a resistor layer shared with the lower electrode of the capacitor, a dielectric film formed on the upper surface of the constant layer and the upper electrode of the capacitor of the type and the top of the dielectric film and the side of the resistive layer do.

따라서, 저항층의 침해를 방지할 수 있어 공정 안정화 및 수율향상을 도모할 수 있다.Therefore, invasion of the resistive layer can be prevented, and process stabilization and yield can be improved.

Description

저항과 캐패시터를 함께 구비하는 반도체 소자 및 그 제조방법Semiconductor device including resistor and capacitor and method of manufacturing same

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제4도는 본 발명에 의한 반도체 소자를 제조고하기 위한 간략한 레이아웃도이다.4 is a simplified layout diagram for manufacturing a semiconductor device according to the present invention.

Claims (6)

반도체기판 상에서 형성되며, 캐패시터의 하부전극으로 공유되는 저항층; 상기 저항층의 상부 표면에 형성된 유전체막; 및 상기 유전체막 상부 및 상기 저항층의 측면을 감싸는 형태의 캐패시터으 상부전극을 구비하는 것을 특징으로 하는 반도체 소자.A resistance layer formed on the semiconductor substrate and shared by the lower electrode of the capacitor; A dielectric film formed on an upper surface of the resistive layer; And a capacitor formed around the dielectric layer and the side surface of the resistive layer, the upper electrode. 제1항에 있어서, 상기 저항층 및 캐패시터의 상부전극은 폴리실리콘으로 이루어진 것을특징으로 하는 반도체 소자.The semiconductor device of claim 1, wherein the upper electrodes of the resistive layer and the capacitor are made of polysilicon. 제1항에 있어서, 상기 캐패시터의 상부전극은 폴리실리콘과 실리사이드가 적층된 구조인 것을 특징으로 하는 반도체 소자.The semiconductor device of claim 1, wherein the upper electrode of the capacitor has a structure in which polysilicon and silicide are stacked. 반도체기판상에 저항이 조절된 제1도전층을 적층하여 저항층을 형성하는 단계, 상기 정항층 상에 절연물질을 증착하여 유전체막을 형성하는 단계, 상기 유전체막 및 저항층을 패터닝하는 단계, 결과물 상에 전면에 제2도전층을 형성하는 단계, 상기 유전체막 패턴 및 제1폴리실리콘층 패턴을 감싸는 형태가 되도록 상기 제2도전층을 태터닝하는 단계를 포함하는 것을 특징으로 하는 반도체 소자의 제조방법.Forming a resistive layer by stacking a first conductive layer having a resistance controlled on a semiconductor substrate, depositing an insulating material on the constant layer to form a dielectric layer, patterning the dielectric layer and the resistive layer, and the resultant Forming a second conductive layer on the entire surface of the substrate, and patterning the second conductive layer so as to surround the dielectric film pattern and the first polysilicon layer pattern. Way. 제4항에 있어서, 상기 제1 및 제2도전층은 폴리실리콘으로 이루어지는 것을 특징으로 하는 반도체 소자의 제조방법.The method of claim 4, wherein the first and second conductive layers are made of polysilicon. 제4항에 있어서, 상기 제2도전층은 폴리실리콘의 상부에 실리사이드층이 적층된 구조로 형성하는 것을 특징으로 하는 반도체 소자의 제조방법.The method of claim 4, wherein the second conductive layer has a structure in which a silicide layer is stacked on top of polysilicon. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019950066838A 1995-12-29 1995-12-29 Semiconductor device having resistor and capacitor and method of manufacturing the same KR100190002B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019950066838A KR100190002B1 (en) 1995-12-29 1995-12-29 Semiconductor device having resistor and capacitor and method of manufacturing the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019950066838A KR100190002B1 (en) 1995-12-29 1995-12-29 Semiconductor device having resistor and capacitor and method of manufacturing the same

Publications (2)

Publication Number Publication Date
KR970054123A true KR970054123A (en) 1997-07-31
KR100190002B1 KR100190002B1 (en) 1999-06-01

Family

ID=19447467

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019950066838A KR100190002B1 (en) 1995-12-29 1995-12-29 Semiconductor device having resistor and capacitor and method of manufacturing the same

Country Status (1)

Country Link
KR (1) KR100190002B1 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1799195B (en) 2003-06-03 2010-06-02 Nxp股份有限公司 Low pass filter and electronic device

Also Published As

Publication number Publication date
KR100190002B1 (en) 1999-06-01

Similar Documents

Publication Publication Date Title
KR900004021A (en) Semiconductor device and manufacturing method thereof
KR960006037A (en) Semiconductor Memory Device Having Multilayer Capacitor and Manufacturing Method Thereof
KR960036027A (en) Nonvolatile Memory Device and Manufacturing Method Thereof
KR950030342A (en) Semiconductor integrated circuit device and manufacturing method thereof
KR970077506A (en) Capacitors incorporated in semiconductor devices and methods of manufacturing the same
KR950015788A (en) Semiconductor memory device and manufacturing method thereof
KR940027149A (en) Semiconductor Memory and Manufacturing Method Thereof
KR920702556A (en) Semiconductor device and manufacturing method thereof
KR900005602A (en) Semiconductor device and manufacturing method
KR900004026A (en) Semiconductor device and manufacturing method
KR950021602A (en) A semiconductor memory device comprising a memory cell each having an information storage capacitor formed on a control electrode of a cell select transistor and a method of manufacturing the same
KR970063730A (en) Ferroelectric memory device and manufacturing method thereof
KR970054123A (en) Semiconductor device including resistor and capacitor and method of manufacturing same
KR920018889A (en) Interlayer contact structure and method of semiconductor device
KR940022841A (en) Capacitor of Semiconductor Device and Manufacturing Method Thereof
KR960032739A (en) Capacitor of Semiconductor Device and Manufacturing Method Thereof
KR930001468A (en) Semiconductor devices
KR920013728A (en) Semiconductor Memory and Manufacturing Method
KR920015622A (en) Manufacturing method of integrated circuit
KR930009127A (en) MOS transistor device and its manufacturing method
KR980005912A (en) Metal Contact Structure of Semiconductor Device and Manufacturing Method Thereof
JP2003204043A5 (en)
KR940012614A (en) Highly Integrated Semiconductor Junction Device and Manufacturing Method Thereof
KR950026000A (en) Semiconductor memory device and manufacturing method thereof
KR950003908A (en) Structure and manufacturing method of TFT-LCD storage capacitor

Legal Events

Date Code Title Description
A201 Request for examination
E902 Notification of reason for refusal
E701 Decision to grant or registration of patent right
GRNT Written decision to grant
FPAY Annual fee payment

Payment date: 20080102

Year of fee payment: 10

LAPS Lapse due to unpaid annual fee