KR970053215A - Pollution Measurement System and Pollution Measurement Method of Ion Implanter - Google Patents

Pollution Measurement System and Pollution Measurement Method of Ion Implanter Download PDF

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Publication number
KR970053215A
KR970053215A KR1019950046228A KR19950046228A KR970053215A KR 970053215 A KR970053215 A KR 970053215A KR 1019950046228 A KR1019950046228 A KR 1019950046228A KR 19950046228 A KR19950046228 A KR 19950046228A KR 970053215 A KR970053215 A KR 970053215A
Authority
KR
South Korea
Prior art keywords
disk
particles
measurement system
ion implanter
wafer
Prior art date
Application number
KR1019950046228A
Other languages
Korean (ko)
Inventor
권재선
김원영
체승기
김치선
Original Assignee
김광호
삼성전자 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 김광호, 삼성전자 주식회사 filed Critical 김광호
Priority to KR1019950046228A priority Critical patent/KR970053215A/en
Priority to TW085113130A priority patent/TW316292B/zh
Priority to JP8306777A priority patent/JPH09180668A/en
Priority to GB9800176A priority patent/GB2317988A/en
Priority to GB9624313A priority patent/GB2307779A/en
Priority to DE19649640A priority patent/DE19649640A1/en
Publication of KR970053215A publication Critical patent/KR970053215A/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/3002—Details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/02—Details
    • H01J2237/022—Avoiding or removing foreign or contaminating particles, debris or deposits on sample or tube
    • H01J2237/0225—Detecting or monitoring foreign particles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/31701—Ion implantation

Abstract

본 발명은 반도체소자의 제조공정중 이온주입장비에 관한 것으로 특히 이온주입장비내의 오염정도를 지속적으로 측정하기 위한 이온주입기의 오염측정 시스템 및 오염측정방법에 대한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to ion implantation equipment during the manufacturing process of semiconductor devices, and more particularly, to a contamination measurement system and a pollution measurement method of an ion implanter for continuously measuring the degree of contamination in an ion implantation equipment.

종래의 파티클의 측정방법은 파티클의 테스트시 마다 베어 웨이퍼를 소비하게 되고, 이를 측정하는 동안 진행중인 공정을 중단하여야 하기 때문에 이로 인한 설비 가동효율의 손실 및 경제적인 손실을 가져와 결과적으로는 제품의 생산성을 저하시키는 문제점이 있었다.Conventional particle measuring methods consume bare wafers every time a particle is tested, and the process in progress must be interrupted during measurement, resulting in loss of equipment operation efficiency and economic loss, resulting in increased product productivity. There was a problem of deterioration.

본 발명은 상술한 문제점을 극복하기 위한 것으로 이온주입기의 공정 챔버냉에 파티클을 검출하는 센서를 부착하고 이를 출력수단을 통하여 출력하므로서 공정의 진행과 동시에 파티클을 관리하여 공정중 챔버내 모니터와 배치별 파티클의 관리로 장비의 가동효율을 높여 수율의 향상과 제품의 품질은 높일 수 있도록 한 것이다.The present invention is to overcome the above-mentioned problems by attaching a sensor to detect the particles in the process chamber of the ion implanter and outputs them through the output means to manage the particles at the same time as the process proceeds by the monitor and batch in the chamber during the process By managing the particles, the operation efficiency of the equipment is improved to improve the yield and the product quality.

Description

이온주입기의 오염측정 시스템 및 오염측정방법Pollution Measurement System and Pollution Measurement Method of Ion Implanter

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제1는 본 발명에 따른 이온주입기의 전체적인 구조를 나타내는 평면도,1 is a plan view showing the overall structure of the ion implanter according to the present invention,

제2도는 이온주입기의 내에 파티클 감지수단의 장착위치도,2 is a mounting position of the particle detection means in the ion implanter,

제3도는 본 발명의 개략적인 구성을 블럭도.3 is a block diagram of a schematic configuration of the present invention.

Claims (6)

공정챔버내에 복수개의 웨이퍼를 디스크의에 고정시키고 이 디스크를 일정속도로 회전시켜 이온을 주입하는 고 이온주입기에 있어서, 상기 챔버 상부의 위치에 디스크의 일측 상단에 고정되어 챔버내 파티클을 검출하여 이를 전기적인 신호를 출력하는 감지수단과, 상기 감지수단의 동작을 제어하는 제어수단과, 상기 감지수단에서 출력된 신호를 입력받아 파티클의 크기와 숫자를 출력하여 하는 출력수단으로 구성된 것을 특징으로 하는 이온주입기의 오염측정 시스템.In a high ion implanter which fixes a plurality of wafers in a process chamber to a disk and injects ions by rotating the disk at a constant speed, the chamber is fixed to a top of one side of the disk at a position above the chamber to detect particles in the chamber. Ion comprising a sensing means for outputting an electrical signal, a control means for controlling the operation of the sensing means, and an output means for receiving the signal output from the sensing means and outputting the size and number of particles Injector contamination measurement system. 제1항에 있어서, 상기 감지수단으로 ISPM(In-Situe Particle Monitering)센서를 사용한 것을 특징으로 하는 이온주입기의 오염측정 시스템.The contamination measurement system of an ion implanter according to claim 1, wherein an in-suite particle monitering (ISPM) sensor is used as the detection means. 제1항에 있어서, 상기 출력수단은 파티클의 검출정보가 모니터로 출력되도록 하는 것을 특징으로 하는 이온주입기의 오염측정 시스템.The contamination measurement system of claim 1, wherein the output means outputs detection information of particles to a monitor. 제1항에 있어서, 상기 출력수단은 파티클의 검출정보가 펜 오실로 그래프로 인쇄되어 출력되도록 하는 것을 특징으로 하는 이온주입기의 오염측정 시스템.The contamination measurement system of claim 1, wherein the output means is configured to output the particle detection information as a pen oscillogram. 제1항에 있어서, 상기 출력수단은 파티클의 검출정보가 모니터와 펜 오실로 그래프로 동시에 출력되도록 하는 것을 특징으로 하는 이온주입기의 오염측정 시스템.The contamination measurement system of claim 1, wherein the output means is configured to simultaneously output detection information of particles to a monitor and a pen oscilloscope graph. 웨이퍼의 로딩하는 단계와, 로딩된 복수개의 웨이퍼를 디스크에 정렬 장착하는 단계와, 상기 디스크를 이온주입의 상태로 동작시키는 단계와, 웨이퍼에 이온을 주입하는 단계와, 이온주입후 웨이퍼를 언로딩시키기 위하여 디스크를 원래의 위치로 동작시키는 단계와, 디스크로부터 웨이퍼를 언로딩하는 단계를 갖는 이온주입기에 있어서, 상기 웨이퍼에 디스크를 정렬하는 단계이후에 공정챔버내 파티클을 감지하는 동작을 시작하여 웨이퍼를 언로딩시키기 위하여 디스크를 원래의 위치로 동작시키는 단계 직후에 동작을 마치도록 한 것을 특징으로 하는 이온주입기의 오염측정방법.Loading the wafer, aligning and loading the plurality of loaded wafers onto the disk, operating the disk in an ion implantation state, implanting ions into the wafer, and unloading the wafer after ion implantation In an ion implanter comprising operating the disk to its original position and unloading the wafer from the disk to initiate the operation of sensing particles in the process chamber after aligning the disk to the wafer. The method of measuring the contamination of the ion implanter, characterized in that the operation is completed immediately after the step of operating the disk to the original position to unload. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019950046228A 1995-12-02 1995-12-02 Pollution Measurement System and Pollution Measurement Method of Ion Implanter KR970053215A (en)

Priority Applications (6)

Application Number Priority Date Filing Date Title
KR1019950046228A KR970053215A (en) 1995-12-02 1995-12-02 Pollution Measurement System and Pollution Measurement Method of Ion Implanter
TW085113130A TW316292B (en) 1995-12-02 1996-10-28
JP8306777A JPH09180668A (en) 1995-12-02 1996-11-18 System and method for measuring contamination of ion implanter
GB9800176A GB2317988A (en) 1995-12-02 1996-11-22 Detecting contaminant particles during ion implantation
GB9624313A GB2307779A (en) 1995-12-02 1996-11-22 Detecting contaminant particles during ion implantation
DE19649640A DE19649640A1 (en) 1995-12-02 1996-12-02 Device and method for detecting particles in a process chamber of an ion implantation system

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019950046228A KR970053215A (en) 1995-12-02 1995-12-02 Pollution Measurement System and Pollution Measurement Method of Ion Implanter

Publications (1)

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KR970053215A true KR970053215A (en) 1997-07-29

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Application Number Title Priority Date Filing Date
KR1019950046228A KR970053215A (en) 1995-12-02 1995-12-02 Pollution Measurement System and Pollution Measurement Method of Ion Implanter

Country Status (5)

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JP (1) JPH09180668A (en)
KR (1) KR970053215A (en)
DE (1) DE19649640A1 (en)
GB (1) GB2307779A (en)
TW (1) TW316292B (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100903915B1 (en) * 2009-04-27 2009-06-19 민용준 Feed through of ion injection apparatus

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7235795B2 (en) 2004-08-12 2007-06-26 Applied Materials, Inc. Semiconductor device manufacturing apparatus and a method of controlling a semiconductor device manufacturing process

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3674576D1 (en) * 1985-12-10 1990-10-31 High Yield Technology PARTICLE DETECTOR FOR WAFER PROCESSING DEVICE AND METHOD FOR DETECTING A PARTICLE.
US4804853A (en) * 1987-04-23 1989-02-14 High Yield Technology Compact particle flux monitor
US4885473A (en) * 1988-04-29 1989-12-05 Shofner Engineering Associates, Inc. Method and apparatus for detecting particles in a fluid using a scanning beam
US5047648A (en) * 1990-04-20 1991-09-10 Applied Materials, Inc. Method and apparatus for detecting particles in ion implantation machines
JP3344129B2 (en) * 1994-12-06 2002-11-11 日新電機株式会社 Laser measurement device for suspended particles

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100903915B1 (en) * 2009-04-27 2009-06-19 민용준 Feed through of ion injection apparatus

Also Published As

Publication number Publication date
GB9624313D0 (en) 1997-01-08
TW316292B (en) 1997-09-21
JPH09180668A (en) 1997-07-11
DE19649640A1 (en) 1997-06-05
GB2307779A (en) 1997-06-04

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