KR970052731A - A method of oblique etching the conductive layer of the semiconductor device - Google Patents

A method of oblique etching the conductive layer of the semiconductor device Download PDF

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Publication number
KR970052731A
KR970052731A KR1019950050981A KR19950050981A KR970052731A KR 970052731 A KR970052731 A KR 970052731A KR 1019950050981 A KR1019950050981 A KR 1019950050981A KR 19950050981 A KR19950050981 A KR 19950050981A KR 970052731 A KR970052731 A KR 970052731A
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South Korea
Prior art keywords
etching
conductive layer
tungsten silicide
film
photoresist pattern
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KR1019950050981A
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Korean (ko)
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KR100194786B1 (en
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김문환
오진성
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김주용
현대전자산업 주식회사
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Publication of KR970052731A publication Critical patent/KR970052731A/en
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Publication of KR100194786B1 publication Critical patent/KR100194786B1/en

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  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Semiconductor Memories (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

본 발명은 폴리실리콘막/텅스텐 실리사이드막으로 이루어진 2중 구조의 전도층을 경사식각하는 방법에 있어서, 상기 텅스텐 실리사이드막 상에 감광막 패턴을 형성하는 단계; 상기 감광막 패턴을 식각 마스크로하여 상기 텅스텐 실리사이드막을 건식식각하되 식각시 다량의 폴리머가 발생되도록 식각하는 단계; 폴리머 형성없이 상기 폴리실리콘막을 수직하게 식각하는 단계; 및 전체구조 상부에 도포하는 단계를 포함하여 이루어지는 것을 특징으로 하는 폴리실리콘막/텅스텐 실리사이드막으로 이루어진 2중 구조의 전도층을 식각하는 방법에 관한 것이다.According to an aspect of the present invention, there is provided a method of etching an electrically conductive layer having a double structure of a polysilicon film / tungsten silicide film, the method comprising: forming a photoresist pattern on the tungsten silicide film; Dry etching the tungsten silicide layer using the photoresist pattern as an etching mask, and etching a large amount of polymer during etching; Vertically etching the polysilicon film without forming a polymer; And it relates to a method for etching a conductive layer of a double structure consisting of a polysilicon film / tungsten silicide film comprising the step of applying on top of the entire structure.

Description

반도체소자의 전도층을 경사식각하는 방법Method of inclining the conductive layer of the semiconductor device

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제2도 내지 제5도는 본 발명에 따른 전도층의 경사식각을 설명하는 단면도.2 to 5 are cross-sectional views illustrating the inclined etching of the conductive layer according to the present invention.

Claims (6)

반도체 소자의 전도층을 경사식각하는 방법에 있어서, 전도층 상에 감광막 패턴을 형성하는 단계; 상기 감광막 패턴을 식각 마스크로하여 상기 전도층을 건식식각하되 식각시 다량의 폴리머가 발생되도록 식각하는 단계를 포함하여 이루어지는 것을 특징으로 하는 반도체 소자의 전도층을 경사식각하는 방법.CLAIMS What is claimed is: 1. A method of obliquely etching a conductive layer of a semiconductor device, the method comprising: forming a photoresist pattern on the conductive layer; And etching the conductive layer by dry etching the conductive layer using the photoresist pattern as an etch mask, such that a large amount of polymer is generated during etching. 제1항에 있어서, 상기 전도층의 건식식각은 CL2, SF6, N2의 혼합가스에 의해 플라즈마에 의해 식각되는 것을 특징으로 하는 반도체 소자의 전도층을 경사식각하는 방법.The method of claim 1, wherein the dry etching of the conductive layer is etched by plasma by a mixed gas of CL 2 , SF 6 , and N 2 . 제1항에 있어서, 상기 전도층의 건식식각은 Br함유기체, C-F를 포함하는 기체, B-F를 함유하는 가스중 적어도 어느 하나인 것을 특징으로 하는 반도체 소자의 전도층을 경사식각하는 방법.The method of claim 1, wherein the dry etching of the conductive layer is at least one of a Br-containing gas, a gas containing C-F, and a gas containing B-F. 폴리실리콘막/텅스텐 실리사이드막으로 이루어진 2중 구조의 전도층을 경사식각하는 방법에 있어서, 상기 텅스텐 실리사이드막 상에 감광막 패턴을 형성하는 단계; 상기 감광막 패턴을 식각 마스크로하여 상기 텅스텐 실리사이드막을 건식식각하되 식각시 다량의 폴리머가 발생되도록 식각하는 단계; 폴리머 형성없이 상기 폴리실리콘막을 수직하게 식각하는 단계; 및 전체구조 상부에 산화막을 도포하는 단계를 포함하여 이루어지는 것을 특징으로 하는 폴리실리콘막/텅스텐 실리사이드막으로 이루어진 2중 구조의 전도층을 식각하는 방법.CLAIMS What is claimed is: 1. A method of oblique etching a conductive layer having a double structure of polysilicon film / tungsten silicide film, comprising: forming a photoresist pattern on the tungsten silicide film; Dry etching the tungsten silicide layer using the photoresist pattern as an etching mask, and etching a large amount of polymer during etching; Vertically etching the polysilicon film without forming a polymer; And applying an oxide film over the entire structure. 2. The method of claim 2, wherein the conductive layer has a polysilicon film / tungsten silicide film. 제4항에 있어서, 상기 텅스텐 실리사이드막의 건식식각은 CL2, SF6, N2의 혼합가스에 의한 플라즈마에 의해 식각되는 것을 특징으로 하는 폴리실리콘막/텅스텐 실리사이드막으로 이루어진 2중 구조의 전도층을 식각하는 방법.The conductive layer of claim 4, wherein the dry etching of the tungsten silicide layer is performed by plasma using a mixed gas of CL 2 , SF 6 , and N 2 . How to etch it. 제4항에 있어서, 상기 텅스텐 실리사이드막의 건식식각은 Br함유기체, C-F를 포함하는 기체, B-F를 함유하는 가스중 적어도 어느 하나인 것을 특징으로 하는 폴리실리콘막/텅스텐 실리사이드막으로 이루어진 2중 구조의 전도층을 식각하는 방법.The method of claim 4, wherein the dry etching of the tungsten silicide film is at least one of a Br-containing gas, a gas containing CF, and a gas containing BF. Method of etching the conductive layer. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019950050981A 1995-12-16 1995-12-16 Semiconductor device manufacturing method KR100194786B1 (en)

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KR1019950050981A KR100194786B1 (en) 1995-12-16 1995-12-16 Semiconductor device manufacturing method

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KR970052731A true KR970052731A (en) 1997-07-29
KR100194786B1 KR100194786B1 (en) 1999-06-15

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