KR970051633A - Structure of Cathode Structure and Electrospinning Method - Google Patents

Structure of Cathode Structure and Electrospinning Method Download PDF

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Publication number
KR970051633A
KR970051633A KR1019950052917A KR19950052917A KR970051633A KR 970051633 A KR970051633 A KR 970051633A KR 1019950052917 A KR1019950052917 A KR 1019950052917A KR 19950052917 A KR19950052917 A KR 19950052917A KR 970051633 A KR970051633 A KR 970051633A
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KR
South Korea
Prior art keywords
electron
radiator
cathode
metal
cathode sleeve
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KR1019950052917A
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Korean (ko)
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KR100195955B1 (en
Inventor
이경상
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구자홍
Lg 전자주식회사
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Application filed by 구자홍, Lg 전자주식회사 filed Critical 구자홍
Priority to KR1019950052917A priority Critical patent/KR100195955B1/en
Priority to CN96120538A priority patent/CN1089478C/en
Priority to JP35334596A priority patent/JPH09180622A/en
Priority to GB9626424A priority patent/GB2308495B/en
Priority to MYPI96005375A priority patent/MY117904A/en
Priority to BR9606144A priority patent/BR9606144A/en
Publication of KR970051633A publication Critical patent/KR970051633A/en
Application granted granted Critical
Publication of KR100195955B1 publication Critical patent/KR100195955B1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
    • H01J1/02—Main electrodes
    • H01J1/13—Solid thermionic cathodes
    • H01J1/20—Cathodes heated indirectly by an electric current; Cathodes heated by electron or ion bombardment

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  • Solid Thermionic Cathode (AREA)
  • Cold Cathode And The Manufacture (AREA)
  • Electrodes For Cathode-Ray Tubes (AREA)

Abstract

본 발명은 음극구조체의 구조 및 전자방사체 도포방법에 관한 것으로 특히 음극선관용 음극구조체의 제조시 전자방사물질을 압력에 의한 프린트방식을 이용해 도포하고 활성화금속을 에어스프레이방식을 이용해 도포하므로 균일한 활성화금속의 전자방사체를 얻을 수 있고, 전자방사물질의 도포밀도를 높여 음극동작시 전자방사물질의 증발을 억제함으로 음극전류밀도를 높이고 전자방사수명을 길게할수 있도록 한것으로서, 음극가열용 히터가 삽입설치된 원통형 음극슬리이브 상단에 전자방사체를 구비하기 위한 기체금속을 구비하고, 기체금속 상면에 활성화금속과 전자방사물질이 혼합구성된 전자방사체를 도포한 것이다.The present invention relates to a structure of a cathode structure and a method for applying an electron radiator. In particular, in the manufacture of a cathode structure for a cathode ray tube, an electron-emitting material is applied using a printing method by pressure and an activating metal is applied using an air spray method. It is possible to obtain an electron radiator, and to increase the coating density of the electron radiating material to suppress evaporation of the electron radiating material during the operation of the cathode, thereby increasing the cathode current density and extending the electron radiation life. The upper surface of the cathode sleeve is provided with a base metal for providing an electron radiator, and the top surface of the base metal is coated with an electron radiator having a mixture of an active metal and an electron radiating material.

Description

음극구조체의 구조 및 전자방사체 도포방법Structure of Cathode Structure and Electrospinning Method

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제2도는 본 발명 음극선관용 음극구조체의 구성도.2 is a block diagram of a cathode structure for a cathode ray tube of the present invention.

Claims (6)

음극가열용 히터가 설치된 원통형 음극슬리이브와, 상기 음극슬리이브 상단에 전자방사체를 구비하기 위한 기체금속이 구성된 음극구조체에 있어서, 상기 기체금속 상면에 도포되는 전자방사체는 마그네슘, 실리콘, 지르콘, 망간, 텅스텐, 토륨이 적어도 1종 포함된 활성화금속과 산화바륨을 주성분으로 하고 산화스트론튬, 산화칼슘, 산화스칸드늄, 산화알루미늄이 적어도 1종 함유된 전자방사물질을 혼합하여 구비한 것을 특징으로 하는 음극구조체의 구조.In the negative electrode structure composed of a cylindrical cathode sleeve provided with a heater for heating the cathode, and a base metal for providing an electron radiator on the top of the cathode sleeve, the electron radiator applied to the upper surface of the base metal is magnesium, silicon, zircon, manganese A cathode comprising at least one active metal containing at least one of tungsten and thorium and barium oxide as a main component, and a mixture of electron-emitting materials containing at least one of strontium oxide, calcium oxide, scannium oxide and aluminum oxide The structure of the structure. 음극가열용 히터가 삽입설치된 원통형 음극슬리이브와, 상기 음극슬리이브 상단에 전자방사체를 구비하기 기체금속과, 상기 기체금속 상면에 활성화금속과 전자방사물질이 혼합구성되는 전자방사체가 도포되어 구성되는 음극구조체에 있어서, 상기 전자방사체는 먼저 전자방사물질을 도포하고 전자방사물질 표면에 활성화 금속을 도포하는 것을 특징으로 하는 전자방사체 도포방법.Cylindrical cathode sleeve having a heater for negative electrode heating is inserted, the electron radiator is provided on the upper surface of the cathode sleeve, and the electron radiator is composed of a mixture of the active metal and the electron radiating material on the upper surface of the gas metal In the negative electrode structure, the electron-emitting body is first applied to the electron-emitting material, characterized in that to apply the active metal on the surface of the electron-emitting material. 음극가열용 히터가 삽입설치된 원통형 음극슬리이브와, 상기 음극슬리이브 상단에 전자방사체를 구비하기 기체금속과, 상기 기체금속 상면에 활성화금속과 전자방사물질이 혼합구성되는 전자방사체가 도포되어 구성되는 음극구조체에 있어서, 상기 전자방사체는 전자방사물질과 활성화금속 교대로 수회 도포하는 것을 특징으로 하는 전자방사체 도포방법.Cylindrical cathode sleeve having a heater for negative electrode heating is inserted, the electron radiator is provided on the upper surface of the cathode sleeve, and the electron radiator is composed of a mixture of the active metal and the electron radiating material on the upper surface of the gas metal The method of claim 1, wherein the electron radiator is applied to the electron radiating material and the activation metal alternately several times. 제3항에 있어서, 상기 전자방사물질은 1회 도포두께가 20um이하로 도포하는 것을 특징으로 하는 전자방사체 도포방법.The method of claim 3, wherein the electron emitting material is applied at a coating thickness of 20 μm or less. 제3항에 있어서 상기 전자방사물질은 일정한 압력을 가한 프린트방식에 의해 도포되는 것을 특징으로 하는 전자방사체 도포방법.The method of claim 3, wherein the electron emitting material is applied by a printing method applied with a constant pressure. 제3항에 있어서, 상기 활성화 금속은 에어스프레이방법에 의해 도포되는 것을 특징으로 하는 전자방사체 도포방법.4. The method of claim 3, wherein the activating metal is applied by an air spray method. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019950052917A 1995-12-20 1995-12-20 Cathode structure and the coating method of electron emitter KR100195955B1 (en)

Priority Applications (6)

Application Number Priority Date Filing Date Title
KR1019950052917A KR100195955B1 (en) 1995-12-20 1995-12-20 Cathode structure and the coating method of electron emitter
CN96120538A CN1089478C (en) 1995-12-20 1996-12-10 Cathode Structure body and method of coating electronics radiative body
JP35334596A JPH09180622A (en) 1995-12-20 1996-12-17 Structure for cathode structural body and electron emitting body coating method
GB9626424A GB2308495B (en) 1995-12-20 1996-12-19 A Cathode structure body and a method of coating an emitter
MYPI96005375A MY117904A (en) 1995-12-20 1996-12-19 A cathode structure body and method of coating an emitter.
BR9606144A BR9606144A (en) 1995-12-20 1996-12-20 Cathode structure body and coating method of an emitter

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019950052917A KR100195955B1 (en) 1995-12-20 1995-12-20 Cathode structure and the coating method of electron emitter

Publications (2)

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KR970051633A true KR970051633A (en) 1997-07-29
KR100195955B1 KR100195955B1 (en) 1999-06-15

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JP (1) JPH09180622A (en)
KR (1) KR100195955B1 (en)
CN (1) CN1089478C (en)
BR (1) BR9606144A (en)
GB (1) GB2308495B (en)
MY (1) MY117904A (en)

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KR20000010147A (en) * 1998-07-30 2000-02-15 구자홍 Cathode for cathode ray tube
US6290564B1 (en) * 1999-09-30 2001-09-18 Motorola, Inc. Method for fabricating an electron-emissive film
JP3639808B2 (en) 2000-09-01 2005-04-20 キヤノン株式会社 Electron emitting device, electron source, image forming apparatus, and method of manufacturing electron emitting device
JP3658346B2 (en) 2000-09-01 2005-06-08 キヤノン株式会社 Electron emitting device, electron source and image forming apparatus, and method for manufacturing electron emitting device
JP3634781B2 (en) 2000-09-22 2005-03-30 キヤノン株式会社 Electron emission device, electron source, image forming device, and television broadcast display device
FR2821205A1 (en) * 2001-02-19 2002-08-23 Thomson Tubes & Displays Electron gun incorporating a cathode made from a mixture containing barium and a co-evaporative material to reduce parasitic emissions
JP3768908B2 (en) 2001-03-27 2006-04-19 キヤノン株式会社 Electron emitting device, electron source, image forming apparatus
JP3703415B2 (en) 2001-09-07 2005-10-05 キヤノン株式会社 ELECTRON EMITTING ELEMENT, ELECTRON SOURCE, IMAGE FORMING APPARATUS, AND METHOD FOR MANUFACTURING ELECTRON EMITTING ELEMENT AND ELECTRON SOURCE
JP3605105B2 (en) 2001-09-10 2004-12-22 キヤノン株式会社 Electron emitting element, electron source, light emitting device, image forming apparatus, and method of manufacturing each substrate
KR100490170B1 (en) * 2003-07-10 2005-05-16 엘지.필립스 디스플레이 주식회사 Cathode of CRT
CN105788996B (en) * 2014-12-22 2018-02-06 中国电子科技集团公司第十二研究所 A kind of submicron film scandium tungsten cathode and preparation method thereof
KR20190001149U (en) 2017-11-07 2019-05-15 김성열 Wig
KR20190082380A (en) 2017-12-30 2019-07-10 이성민 Wig
CN111739771A (en) * 2020-06-30 2020-10-02 西安稀有金属材料研究院有限公司 Scandium-containing strontium active material for heat cathode material

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US3113236A (en) * 1959-06-23 1963-12-03 Philips Corp Oxide dispenser type cathode
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JP2758244B2 (en) * 1990-03-07 1998-05-28 三菱電機株式会社 Cathode for electron tube
JP2897938B2 (en) * 1991-01-25 1999-05-31 三菱電機株式会社 Cathode for electron tube
DE4207220A1 (en) * 1992-03-07 1993-09-09 Philips Patentverwaltung SOLID ELEMENT FOR A THERMIONIC CATHODE

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GB2308495A (en) 1997-06-25
KR100195955B1 (en) 1999-06-15
CN1173036A (en) 1998-02-11
BR9606144A (en) 1998-11-03
JPH09180622A (en) 1997-07-11
GB9626424D0 (en) 1997-02-05
MY117904A (en) 2004-08-30
GB2308495B (en) 2000-08-30
CN1089478C (en) 2002-08-21

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